Grįžti į ROHM Semiconductor

ROHM Semiconductor BD58020GW E-Fuse Protection IC

ROHM Semiconductor BD58020GW E-Fuse Protection IC is an overvoltage, overcurrent, and overtemperature protection IC. The BD58020GW has a built-in low ON-resistance of 16mΩ (typ.) N-ch FET, which immediately prevents damage to the downstream components when a fault condition occurs. The ROHM Semiconductor BD58020GW also features a temperature protection function for two external NTC thermistors, enabling monitoring of two different locations in an application. External or internal fixed resistors can set the overvoltage and overcurrent levels.

Features

  • Programmable overvoltage protection with external resistors
  • Programmable overcurrent limit with an external resistor
  • 50ns (typ.) ultra-fast overvoltage response time
  • Built-in 16mΩ NMOS FET
  • Over temperature protection and two different thermal monitors support with NTC
  • Programmable brownout detection
  • Bi-directional I/O for providing temperature fault conditions
  • Active discharge support at VOUT
  • Battery mode support
  • USB On-the-Go (OTG) support

Applications

  • Smart home appliances
  • Plug adapters or battery applications
  • Portable devices

Specifications

  • 3.0V to 28V (3.6V for start-up) input voltage range
  • 2.7V to 5.5V BAT voltage range
  • 5.0A (typ.) maximum continuous current
  • 16mΩ (typ.) N-ch FET ON resistance
  • 50ns (typ.) OVP response time
  • 128μA (typ.), 200μA (max.) quiescent current
  • 2.77μA (typ.) low Iq mode/VBAT current
  • -40°C to +125°C operating junction temperature
  • 1.7mm x 1.7mm x 0.62mm [W (typ.) x D (typ.) x H (max.)], 0.4mm pitch UCSP55M1C (16-pin) package

Typical Application Circuit

Application Circuit Diagram - ROHM Semiconductor BD58020GW E-Fuse Protection IC

Block Diagram

Block Diagram - ROHM Semiconductor BD58020GW E-Fuse Protection IC
Paskelbta: 2026-09-25 | Atnaujinta: 2026-10-02