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MOSFETs P-CHANNEL 60-V (D-S) 175C MOSFET
- SQD50P06-15L_NE3
- Vishay Semiconductors
-
1:
2,19 €
-
1 052Prieinamumas
-
Naujas Produktas
|
„Mouser“ Dalies Nr.
78-SQD50P06-15L_NE3
Naujas Produktas
|
Vishay Semiconductors
|
MOSFETs P-CHANNEL 60-V (D-S) 175C MOSFET
|
|
1 052Prieinamumas
|
|
Min.: 1
Daugkart.: 1
Maks.: 2 000
|
|
MOSFETs
|
Si
|
SMD/SMT
|
TO-252-3
|
P-Channel
|
|
|
|
MOSFETs P-CHANNEL 40-V (D-S) 175C MOSFET
- SQD50P04-13L_NE3
- Vishay Semiconductors
-
1:
1,85 €
-
1 000Prieinamumas
-
Naujas Produktas
|
„Mouser“ Dalies Nr.
78-SQD50P04-13L_NE3
Naujas Produktas
|
Vishay Semiconductors
|
MOSFETs P-CHANNEL 40-V (D-S) 175C MOSFET
|
|
1 000Prieinamumas
|
|
Min.: 1
Daugkart.: 1
|
|
MOSFETs
|
Si
|
SMD/SMT
|
TO-252-3
|
P-Channel
|
|
|
|
MOSFETs TO252 100V 35A N-CH MOSFET
- RD3P03BBHTL1
- ROHM Semiconductor
-
1:
2,18 €
-
3 766Prieinamumas
|
„Mouser“ Dalies Nr.
755-RD3P03BBHTL1
|
ROHM Semiconductor
|
MOSFETs TO252 100V 35A N-CH MOSFET
|
|
3 766Prieinamumas
|
|
Min.: 1
Daugkart.: 1
:
2 500
|
|
MOSFETs
|
Si
|
SMD/SMT
|
TO-252-3
|
N-Channel
|
|
|
|
MOSFETs Transistor, MOSFET Nch, 60V(Vdss), 70A(Id), (4.5V Drive)
- RD3L07BBGTL1
- ROHM Semiconductor
-
1:
3,34 €
-
4 442Prieinamumas
|
„Mouser“ Dalies Nr.
755-RD3L07BBGTL1
|
ROHM Semiconductor
|
MOSFETs Transistor, MOSFET Nch, 60V(Vdss), 70A(Id), (4.5V Drive)
|
|
4 442Prieinamumas
|
|
Min.: 1
Daugkart.: 1
:
2 500
|
|
MOSFETs
|
Si
|
SMD/SMT
|
TO-252-3
|
N-Channel
|
|
|
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IGBT IGBT Discrete 600V, 5A in TO-252
- BIDD05N60T
- Bourns
-
1:
1,92 €
-
24 137Prieinamumas
|
„Mouser“ Dalies Nr.
652-BIDD05N60T
|
Bourns
|
IGBT IGBT Discrete 600V, 5A in TO-252
|
|
24 137Prieinamumas
|
|
Min.: 1
Daugkart.: 1
:
2 500
|
|
IGBTs
|
Si
|
SMD/SMT
|
TO-252-3
|
|
|
|
|
MOSFETs Transistor, MOSFET Pch, -100V(Vdss), -20A(Id), (4.5V, 6.0V Drive)
- RD3P02BATTL1
- ROHM Semiconductor
-
1:
1,96 €
-
2 397Prieinamumas
|
„Mouser“ Dalies Nr.
755-RD3P02BATTL1
|
ROHM Semiconductor
|
MOSFETs Transistor, MOSFET Pch, -100V(Vdss), -20A(Id), (4.5V, 6.0V Drive)
|
|
2 397Prieinamumas
|
|
Min.: 1
Daugkart.: 1
:
2 500
|
|
MOSFETs
|
Si
|
SMD/SMT
|
TO-252-3
|
P-Channel
|
|
|
|
MOSFETs TO252 650V 27A N-CH MOSFET
- R6009RND3TL1
- ROHM Semiconductor
-
1:
1,91 €
-
5 047Prieinamumas
|
„Mouser“ Dalies Nr.
755-R6009RND3TL1
|
ROHM Semiconductor
|
MOSFETs TO252 650V 27A N-CH MOSFET
|
|
5 047Prieinamumas
|
|
Min.: 1
Daugkart.: 1
:
2 500
|
|
MOSFETs
|
Si
|
SMD/SMT
|
TO-252-3
|
N-Channel
|
|
|
|
MOSFETs Transistor, MOSFET Nch, 100V(Vdss), 70A(Id), (6.0V, 10V Drive)
- RD3P07BBHTL1
- ROHM Semiconductor
-
1:
3,52 €
-
4 412Prieinamumas
|
„Mouser“ Dalies Nr.
755-RD3P07BBHTL1
|
ROHM Semiconductor
|
MOSFETs Transistor, MOSFET Nch, 100V(Vdss), 70A(Id), (6.0V, 10V Drive)
|
|
4 412Prieinamumas
|
|
Min.: 1
Daugkart.: 1
:
2 500
|
|
MOSFETs
|
Si
|
SMD/SMT
|
TO-252-3
|
N-Channel
|
|
|
|
MOSFETs TO252 650V 21A N-CH MOSFET
- R6007RND3TL1
- ROHM Semiconductor
-
1:
1,85 €
-
5 390Prieinamumas
|
„Mouser“ Dalies Nr.
755-R6007RND3TL1
|
ROHM Semiconductor
|
MOSFETs TO252 650V 21A N-CH MOSFET
|
|
5 390Prieinamumas
|
|
Min.: 1
Daugkart.: 1
:
2 500
|
|
MOSFETs
|
Si
|
SMD/SMT
|
TO-252-3
|
N-Channel
|
|
|
|
Dvipoliai tranzistoriai – BJT Transistor, PNP, TO-252 (DPAK), -30V -5A, Power
- 2SAR572D3FRATL
- ROHM Semiconductor
-
1:
1,98 €
-
3 999Prieinamumas
|
„Mouser“ Dalies Nr.
755-2SAR572D3FRATL
|
ROHM Semiconductor
|
Dvipoliai tranzistoriai – BJT Transistor, PNP, TO-252 (DPAK), -30V -5A, Power
|
|
3 999Prieinamumas
|
|
Min.: 1
Daugkart.: 1
:
2 500
|
|
BJTs - Bipolar Transistors
|
Si
|
SMD/SMT
|
TO-252-3
|
PNP
|
|
|
|
Dvipoliai tranzistoriai – BJT Transistor, NPN, TO-252 (DPAK), 30V 10A, Power
- 2SCR582D3TL1
- ROHM Semiconductor
-
1:
1,92 €
-
3 279Prieinamumas
|
„Mouser“ Dalies Nr.
755-2SCR582D3TL1
|
ROHM Semiconductor
|
Dvipoliai tranzistoriai – BJT Transistor, NPN, TO-252 (DPAK), 30V 10A, Power
|
|
3 279Prieinamumas
|
|
Min.: 1
Daugkart.: 1
:
2 500
|
|
BJTs - Bipolar Transistors
|
Si
|
SMD/SMT
|
TO-252-3
|
NPN
|
|
|
|
MOSFETs Transistor MOSFET, Nch 800V 1A 1st Gen, for Auto w/ESD Protect
- R8001CND3FRATL
- ROHM Semiconductor
-
1:
2,92 €
-
2 582Prieinamumas
|
„Mouser“ Dalies Nr.
755-R8001CND3FRATL
|
ROHM Semiconductor
|
MOSFETs Transistor MOSFET, Nch 800V 1A 1st Gen, for Auto w/ESD Protect
|
|
2 582Prieinamumas
|
|
Min.: 1
Daugkart.: 1
:
2 500
|
|
MOSFETs
|
Si
|
SMD/SMT
|
TO-252-3
|
N-Channel
|
|
|
|
MOSFETs TO252 800V 2A N-CH
- R8002CND3FRATL
- ROHM Semiconductor
-
1:
3,36 €
-
2 807Prieinamumas
|
„Mouser“ Dalies Nr.
755-R8002CND3FRATL
|
ROHM Semiconductor
|
MOSFETs TO252 800V 2A N-CH
|
|
2 807Prieinamumas
|
|
Min.: 1
Daugkart.: 1
:
2 500
|
|
MOSFETs
|
Si
|
SMD/SMT
|
TO-252-3
|
N-Channel
|
|
|
|
MOSFETs Nch 60V 15A TO-252 (DPAK)
- RD3L150SNTL1
- ROHM Semiconductor
-
1:
1,63 €
-
3 608Prieinamumas
|
„Mouser“ Dalies Nr.
755-RD3L150SNTL1
|
ROHM Semiconductor
|
MOSFETs Nch 60V 15A TO-252 (DPAK)
|
|
3 608Prieinamumas
|
|
Min.: 1
Daugkart.: 1
:
2 500
|
|
MOSFETs
|
Si
|
SMD/SMT
|
TO-252-3
|
N-Channel
|
|
|
|
Dvipoliai tranzistoriai – BJT 10A 60V 20W PNP
- MJD2955T4G
- onsemi
-
1:
0,998 €
-
11 919Prieinamumas
|
„Mouser“ Dalies Nr.
863-MJD2955T4G
|
onsemi
|
Dvipoliai tranzistoriai – BJT 10A 60V 20W PNP
|
|
11 919Prieinamumas
|
|
Min.: 1
Daugkart.: 1
Maks.: 2 500
:
2 500
|
|
BJTs - Bipolar Transistors
|
Si
|
SMD/SMT
|
TO-252-3
|
PNP
|
|
|
|
Dvipoliai tranzistoriai – BJT 1A 350V 15W PNP
- MJD5731T4G
- onsemi
-
1:
1,01 €
-
11 825Prieinamumas
|
„Mouser“ Dalies Nr.
863-MJD5731T4G
|
onsemi
|
Dvipoliai tranzistoriai – BJT 1A 350V 15W PNP
|
|
11 825Prieinamumas
|
|
Min.: 1
Daugkart.: 1
Maks.: 2 500
:
2 500
|
|
BJTs - Bipolar Transistors
|
Si
|
SMD/SMT
|
TO-252-3
|
PNP
|
|
|
|
MOSFETs Transistor, MOSFET Pch, -100V(Vdss), -10A(Id), (4.5V, 6.0V Drive)
- RD3P01BATTL1
- ROHM Semiconductor
-
1:
1,63 €
-
2 326Prieinamumas
|
„Mouser“ Dalies Nr.
755-RD3P01BATTL1
|
ROHM Semiconductor
|
MOSFETs Transistor, MOSFET Pch, -100V(Vdss), -10A(Id), (4.5V, 6.0V Drive)
|
|
2 326Prieinamumas
|
|
Min.: 1
Daugkart.: 1
:
2 500
|
|
MOSFETs
|
Si
|
SMD/SMT
|
TO-252-3
|
P-Channel
|
|
|
|
IGBT N-Ch 600 Volt 7 Amp
- STGD7NB60ST4
- STMicroelectronics
-
1:
2,64 €
-
5 000Prieinamumas
|
„Mouser“ Dalies Nr.
511-STGD7NB60ST4
|
STMicroelectronics
|
IGBT N-Ch 600 Volt 7 Amp
|
|
5 000Prieinamumas
|
|
Min.: 1
Daugkart.: 1
:
2 500
|
|
IGBTs
|
Si
|
SMD/SMT
|
TO-252-3
|
|
|
|
|
MOSFETs Pch -45V Vdss -16A TO-252(DPAK); TO-252
- RD3H160SPFRATL
- ROHM Semiconductor
-
1:
2,05 €
-
4 826Prieinamumas
|
„Mouser“ Dalies Nr.
755-RD3H160SPFRATL
|
ROHM Semiconductor
|
MOSFETs Pch -45V Vdss -16A TO-252(DPAK); TO-252
|
|
4 826Prieinamumas
|
|
Min.: 1
Daugkart.: 1
:
2 500
|
|
MOSFETs
|
Si
|
SMD/SMT
|
TO-252-3
|
P-Channel
|
|
|
|
MOSFETs Nch 100V Vdss 10A ID TO-252(DPAK); TO-252
- RD3P100SNFRATL
- ROHM Semiconductor
-
1:
2,00 €
-
2 354Prieinamumas
|
„Mouser“ Dalies Nr.
755-RD3P100SNFRATL
|
ROHM Semiconductor
|
MOSFETs Nch 100V Vdss 10A ID TO-252(DPAK); TO-252
|
|
2 354Prieinamumas
|
|
Min.: 1
Daugkart.: 1
:
2 500
|
|
MOSFETs
|
Si
|
SMD/SMT
|
TO-252-3
|
N-Channel
|
|
|
|
MOSFETs TO252 250V 30A N-CH X3CLASS
- IXFY30N25X3
- IXYS
-
1:
8,00 €
-
660Prieinamumas
|
„Mouser“ Dalies Nr.
747-IXFY30N25X3
|
IXYS
|
MOSFETs TO252 250V 30A N-CH X3CLASS
|
|
660Prieinamumas
|
|
Min.: 1
Daugkart.: 1
|
|
MOSFETs
|
Si
|
SMD/SMT
|
TO-252-3
|
N-Channel
|
|
|
|
MOSFETs Pch -45V Vdss -8A ID TO-252(DPAK); TO-252
- RD3H080SPFRATL
- ROHM Semiconductor
-
1:
1,95 €
-
626Prieinamumas
|
„Mouser“ Dalies Nr.
755-RD3H080SPFRATL
|
ROHM Semiconductor
|
MOSFETs Pch -45V Vdss -8A ID TO-252(DPAK); TO-252
|
|
626Prieinamumas
|
|
Min.: 1
Daugkart.: 1
:
2 500
|
|
MOSFETs
|
Si
|
SMD/SMT
|
TO-252-3
|
P-Channel
|
|
|
|
MOSFETs Nch 100V 17.5A TO-252 (DPAK)
- RD3P175SNTL1
- ROHM Semiconductor
-
1:
1,97 €
-
4 529Prieinamumas
|
„Mouser“ Dalies Nr.
755-RD3P175SNTL1
|
ROHM Semiconductor
|
MOSFETs Nch 100V 17.5A TO-252 (DPAK)
|
|
4 529Prieinamumas
|
|
Min.: 1
Daugkart.: 1
:
2 500
|
|
MOSFETs
|
Si
|
SMD/SMT
|
TO-252-3
|
N-Channel
|
|
|
|
Dvipoliai tranzistoriai – BJT 0.5A 300V 15W PNP
- MJD350T4G
- onsemi
-
1:
1,08 €
-
15 849Prieinamumas
|
„Mouser“ Dalies Nr.
863-MJD350T4G
|
onsemi
|
Dvipoliai tranzistoriai – BJT 0.5A 300V 15W PNP
|
|
15 849Prieinamumas
|
|
Min.: 1
Daugkart.: 1
Maks.: 2 500
:
2 500
|
|
BJTs - Bipolar Transistors
|
Si
|
SMD/SMT
|
TO-252-3
|
PNP
|
|
|
|
IGBT 5 s Short-Circuit Tolerance, 650V 8A, FRD Built-in, TO-252, Field Stop Trench IGBT
- RGT16BM65DTL
- ROHM Semiconductor
-
1:
2,66 €
-
5 325Prieinamumas
|
„Mouser“ Dalies Nr.
755-RGT16BM65DTL
|
ROHM Semiconductor
|
IGBT 5 s Short-Circuit Tolerance, 650V 8A, FRD Built-in, TO-252, Field Stop Trench IGBT
|
|
5 325Prieinamumas
|
|
Min.: 1
Daugkart.: 1
:
2 500
|
|
IGBTs
|
Si
|
SMD/SMT
|
TO-252-3
|
|
|