|
|
Igbt Moduliai 1700 V, 200 A dual IGBT module
- FF200R17KE4HOSA1
- Infineon Technologies
-
1:
122,37 €
-
13Prieinamumas
|
„Mouser“ Dalies Nr.
726-FF200R17KE4HOSA1
|
Infineon Technologies
|
Igbt Moduliai 1700 V, 200 A dual IGBT module
|
|
13Prieinamumas
|
|
Min.: 1
Daugkart.: 1
|
|
|
|
Dual
|
1.7 kV
|
2.3 V
|
310 A
|
100 nA
|
1.25 kW
|
Module
|
- 40 C
|
+ 150 C
|
Tray
|
|
|
|
Igbt Moduliai IGBT 1700V 3600A
- FZ3600R17HP4
- Infineon Technologies
-
1:
1 164,97 €
-
20Prieinamumas
-
37Tikėtina 2026-09-27
|
„Mouser“ Dalies Nr.
641-FZ3600R17HP4
|
Infineon Technologies
|
Igbt Moduliai IGBT 1700V 3600A
|
|
20Prieinamumas
37Tikėtina 2026-09-27
|
|
|
1 164,97 €
|
|
|
1 010,96 €
|
|
Min.: 1
Daugkart.: 1
|
|
|
IGBT Modules
|
Single
|
1.7 kV
|
1.9 V
|
3.6 kA
|
400 nA
|
21 kW
|
Module
|
- 40 C
|
+ 150 C
|
Tray
|
|
|
|
Igbt Moduliai IGBT Module 50A 600V
- FS50R06W1E3_B11
- Infineon Technologies
-
1:
27,49 €
-
242Prieinamumas
|
„Mouser“ Dalies Nr.
641-FS50R06W1E3_B11
|
Infineon Technologies
|
Igbt Moduliai IGBT Module 50A 600V
|
|
242Prieinamumas
|
|
Min.: 1
Daugkart.: 1
|
|
|
IGBT Modules
|
6-Pack
|
600 V
|
1.45 V
|
70 A
|
400 nA
|
205 W
|
Module
|
- 40 C
|
+ 150 C
|
Tray
|
|
|
|
Igbt Moduliai HYBRID PACK DRIVE
- FS820R08A6P2BBPSA1
- Infineon Technologies
-
1:
258,51 €
-
9Prieinamumas
|
„Mouser“ Dalies Nr.
726-FS820R08A6P2BBP1
|
Infineon Technologies
|
Igbt Moduliai HYBRID PACK DRIVE
|
|
9Prieinamumas
|
|
Min.: 1
Daugkart.: 1
|
|
|
Hybrid IGBT Modules
|
6-Pack
|
750 V
|
1.1 V
|
450 A
|
400 nA
|
714 W
|
Module
|
- 40 C
|
+ 150 C
|
Tray
|
|
|
|
Igbt Moduliai 650 V, 100 A booster IGBT module
- DF100R07W1H5FPB54BPSA2
- Infineon Technologies
-
1:
32,24 €
-
28Prieinamumas
|
„Mouser“ Dalies Nr.
726-DFW1H5FPB54BPSA2
|
Infineon Technologies
|
Igbt Moduliai 650 V, 100 A booster IGBT module
|
|
28Prieinamumas
|
|
|
32,24 €
|
|
|
24,45 €
|
|
|
23,68 €
|
|
Min.: 1
Daugkart.: 1
|
|
|
SiC IGBT Modules
|
Dual
|
650 V
|
1.35 V
|
40 A
|
100 nA
|
|
Module
|
- 40 C
|
+ 150 C
|
Tray
|
|
|
|
Igbt Moduliai 650 V, 100 A booster IGBT module
- DF100R07W1H5FPB53BPSA2
- Infineon Technologies
-
1:
31,15 €
-
30Prieinamumas
|
„Mouser“ Dalies Nr.
726-DFW1H5FPB53BPSA2
|
Infineon Technologies
|
Igbt Moduliai 650 V, 100 A booster IGBT module
|
|
30Prieinamumas
|
|
|
31,15 €
|
|
|
24,91 €
|
|
|
23,34 €
|
|
Min.: 1
Daugkart.: 1
|
|
|
SiC IGBT Modules
|
Dual
|
650 V
|
1.35 V
|
40 A
|
100 nA
|
|
Module
|
- 40 C
|
+ 150 C
|
Tray
|
|
|
|
Igbt Moduliai 1700 V, 1200 A dual IGBT module
- FF1200XTR17T2P5BPSA1
- Infineon Technologies
-
1:
938,94 €
-
24Prieinamumas
|
„Mouser“ Dalies Nr.
726-FF1200XTR17T2P5B
|
Infineon Technologies
|
Igbt Moduliai 1700 V, 1200 A dual IGBT module
|
|
24Prieinamumas
|
|
Min.: 1
Daugkart.: 1
|
|
|
|
Dual
|
1.7 kV
|
1.8 V
|
1.2 kA
|
400 nA
|
1.2 MW
|
Module
|
- 40 C
|
+ 175 C
|
Tray
|
|
|
|
Igbt Moduliai 1700 V, 1800 A dual IGBT module
- FF1800XTR17T2P5PBPSA1
- Infineon Technologies
-
1:
1 118,41 €
-
19Prieinamumas
|
„Mouser“ Dalies Nr.
726-FF1800XTR17T2P5P
|
Infineon Technologies
|
Igbt Moduliai 1700 V, 1800 A dual IGBT module
|
|
19Prieinamumas
|
|
Min.: 1
Daugkart.: 1
|
|
|
|
Dual
|
1.7 kV
|
1.8 V
|
1.8 kA
|
400 nA
|
1.8 MW
|
Module
|
|
|
Tray
|
|
|
|
Igbt Moduliai Modules IGBT - IAP IGBT
- VS-GT200TS065S
- Vishay Semiconductors
-
1:
97,70 €
-
27Prieinamumas
|
„Mouser“ Dalies Nr.
78-VS-GT200TS065S
|
Vishay Semiconductors
|
Igbt Moduliai Modules IGBT - IAP IGBT
|
|
27Prieinamumas
|
|
Min.: 1
Daugkart.: 1
|
|
|
IGBT Modules
|
Half Bridge
|
|
650 V
|
476 A
|
480 nA
|
1 kW
|
Module
|
- 40 C
|
+ 175 C
|
Bulk
|
|
|
|
Igbt Moduliai IGBT 1200V 400A
- FZ400R12KE4
- Infineon Technologies
-
1:
103,76 €
-
409Prieinamumas
|
„Mouser“ Dalies Nr.
641-FZ400R12KE4
|
Infineon Technologies
|
Igbt Moduliai IGBT 1200V 400A
|
|
409Prieinamumas
|
|
Min.: 1
Daugkart.: 1
|
|
|
IGBT Modules
|
Single
|
1.2 kV
|
1.75 V
|
400 A
|
400 nA
|
2.4 kW
|
Module
|
- 40 C
|
+ 150 C
|
Tray
|
|
|
|
Igbt Moduliai 1700 V, 1800 A dual IGBT module
- FF1800XTR17T2P5BPSA1
- Infineon Technologies
-
1:
1 094,33 €
-
11Prieinamumas
|
„Mouser“ Dalies Nr.
726-FF1800XTR17T2P5B
|
Infineon Technologies
|
Igbt Moduliai 1700 V, 1800 A dual IGBT module
|
|
11Prieinamumas
|
|
Min.: 1
Daugkart.: 1
|
|
|
|
Dual
|
1.7 kV
|
1.8 V
|
1.8 kA
|
400 nA
|
1.8 MW
|
Module
|
|
|
Tray
|
|
|
|
Igbt Moduliai Modules IGBT - IAP IGBT
- VS-GT150TS065S
- Vishay Semiconductors
-
1:
87,02 €
-
25Prieinamumas
|
„Mouser“ Dalies Nr.
78-VS-GT150TS065S
|
Vishay Semiconductors
|
Igbt Moduliai Modules IGBT - IAP IGBT
|
|
25Prieinamumas
|
|
|
87,02 €
|
|
|
77,97 €
|
|
|
67,30 €
|
|
Min.: 1
Daugkart.: 1
|
|
|
IGBT Modules
|
Half Bridge
|
|
650 V
|
372 A
|
360 nA
|
789 W
|
Module
|
- 40 C
|
+ 175 C
|
Bulk
|
|
|
|
Igbt Moduliai IGBT 600V 50A
- FP50R06W2E3
- Infineon Technologies
-
1:
37,70 €
-
66Prieinamumas
-
480Pagal užsakymą
|
„Mouser“ Dalies Nr.
641-FP50R06W2E3
|
Infineon Technologies
|
Igbt Moduliai IGBT 600V 50A
|
|
66Prieinamumas
480Pagal užsakymą
Turime sandėlyje:
66 Galime išsiųsti iš karto
Pagal užsakymą:
375 Tikėtina 2026-08-20
105 Tikėtina 2026-10-16
Gamintojo numatytas pristatymo laikas
12 Savaičių
|
|
Min.: 1
Daugkart.: 1
|
|
|
IGBT Modules
|
3-Phase Inverter
|
600 V
|
1.45 V
|
65 A
|
400 nA
|
175 W
|
Module
|
- 40 C
|
+ 150 C
|
Tray
|
|
|
|
Igbt Moduliai Automotive grade Easy modules for On Board Charger (OBC) and EV aux applications
- F435MR07W1D7S8B11ABPSA1
- Infineon Technologies
-
1:
48,48 €
-
19Prieinamumas
|
„Mouser“ Dalies Nr.
726-F435MR07W1D7S8B1
|
Infineon Technologies
|
Igbt Moduliai Automotive grade Easy modules for On Board Charger (OBC) and EV aux applications
|
|
19Prieinamumas
|
|
Min.: 1
Daugkart.: 1
|
|
|
|
Quad
|
|
|
|
|
20 mW
|
Module
|
- 40 C
|
+ 150 C
|
Tray
|
|
|
|
Igbt Moduliai 650 V, 50 A PIM IGBT module
- FB50R07W2E3B23BOMA1
- Infineon Technologies
-
1:
40,51 €
-
14Prieinamumas
|
„Mouser“ Dalies Nr.
726-FB50R07W2E3B23BO
|
Infineon Technologies
|
Igbt Moduliai 650 V, 50 A PIM IGBT module
|
|
14Prieinamumas
|
|
Min.: 1
Daugkart.: 1
|
|
|
|
|
650 V
|
1.6 V
|
|
100 nA
|
20 mW
|
Module
|
- 40 C
|
+ 150 C
|
Tray
|
|
|
|
Igbt Moduliai IGBT 1200V 50A
- FS50R12W2T4
- Infineon Technologies
-
1:
39,47 €
-
8Prieinamumas
|
„Mouser“ Dalies Nr.
641-FS50R12W2T4
|
Infineon Technologies
|
Igbt Moduliai IGBT 1200V 50A
|
|
8Prieinamumas
|
|
Min.: 1
Daugkart.: 1
|
|
|
IGBT Modules
|
6-Pack
|
1.2 kV
|
1.85 V
|
83 A
|
100 nA
|
335 W
|
Module
|
- 40 C
|
+ 150 C
|
Tray
|
|
|
|
Igbt Moduliai 1200 V, 160 A booster IGBT module
- DF160R12W2H3F_B11
- Infineon Technologies
-
1:
77,92 €
-
11Prieinamumas
|
„Mouser“ Dalies Nr.
641-DF160R12W2H3FB11
|
Infineon Technologies
|
Igbt Moduliai 1200 V, 160 A booster IGBT module
|
|
11Prieinamumas
|
|
|
77,92 €
|
|
|
66,03 €
|
|
|
66,02 €
|
|
Min.: 1
Daugkart.: 1
|
|
|
SiC IGBT Modules
|
Quad
|
1.2 kV
|
1.55 V
|
20 A
|
100 nA
|
20 mW
|
Module
|
- 40 C
|
+ 150 C
|
Tray
|
|
|
|
Igbt Moduliai IGBT MODULES 650V 150A
- F3L150R07W2E3_B11
- Infineon Technologies
-
1:
51,44 €
-
16Prieinamumas
|
„Mouser“ Dalies Nr.
641-F3L150R07W2E3B11
|
Infineon Technologies
|
Igbt Moduliai IGBT MODULES 650V 150A
|
|
16Prieinamumas
|
|
|
51,44 €
|
|
|
47,71 €
|
|
|
41,13 €
|
|
Min.: 1
Daugkart.: 1
|
|
|
IGBT Modules
|
3-Phase Inverter
|
650 V
|
1.45 V
|
150 A
|
400 nA
|
335 W
|
Module
|
- 40 C
|
+ 150 C
|
Tray
|
|
|
|
Igbt Moduliai 650 V, 50 A PIM IGBT module
- FB50R07W2E3C36BPSA1
- Infineon Technologies
-
1:
38,14 €
-
30Prieinamumas
|
„Mouser“ Dalies Nr.
726-FB50R07W2E3C36BP
|
Infineon Technologies
|
Igbt Moduliai 650 V, 50 A PIM IGBT module
|
|
30Prieinamumas
|
|
Min.: 1
Daugkart.: 1
|
|
|
|
|
650 V
|
1.28 V
|
|
100 nA
|
20 mW
|
Module
|
- 40 C
|
+ 150 C
|
Tray
|
|
|
|
Igbt Moduliai 650 V, 50 A 3-level IGBT module
- FS3L50R07W2H3FB11BPSA1
- Infineon Technologies
-
1:
53,58 €
-
12Prieinamumas
|
„Mouser“ Dalies Nr.
726-FS3L50R07W2H3FB1
|
Infineon Technologies
|
Igbt Moduliai 650 V, 50 A 3-level IGBT module
|
|
12Prieinamumas
|
|
|
53,58 €
|
|
|
44,40 €
|
|
|
38,40 €
|
|
Min.: 1
Daugkart.: 1
|
|
|
SiC IGBT Modules
|
3-Phase Inverter
|
650 V
|
1.45 V
|
50 A
|
100 nA
|
20 mW
|
Module
|
- 40 C
|
+ 150 C
|
Tray
|
|
|
|
Igbt Moduliai Modules IGBT - IAP IGBT
- VS-GT100TS065S
- Vishay Semiconductors
-
1:
76,21 €
-
1Prieinamumas
|
„Mouser“ Dalies Nr.
78-VS-GT100TS065S
|
Vishay Semiconductors
|
Igbt Moduliai Modules IGBT - IAP IGBT
|
|
1Prieinamumas
|
|
Min.: 1
Daugkart.: 1
|
|
|
IGBT Modules
|
Half Bridge
|
|
650 V
|
247 A
|
240 nA
|
517 W
|
Module
|
- 40 C
|
+ 175 C
|
Bulk
|
|
|
|
Igbt Moduliai 650 V, 80 A booster IGBT module
- DF80R07W1H5FPB11BPSA1
- Infineon Technologies
-
1:
29,68 €
-
25Prieinamumas
|
„Mouser“ Dalies Nr.
726-DF80R07W1H5FPB11
|
Infineon Technologies
|
Igbt Moduliai 650 V, 80 A booster IGBT module
|
|
25Prieinamumas
|
|
Min.: 1
Daugkart.: 1
|
|
|
SiC IGBT Modules
|
Dual
|
650 V
|
1.4 V
|
20 A
|
100 nA
|
|
Module
|
- 40 C
|
+ 150 C
|
Tray
|
|
|
|
Igbt Moduliai 62 mm C-Series module with TRENCHSTOPIGBT7 and emitter controlled 7 diode
- FF800R12KE7DS8HPSA1
- Infineon Technologies
-
1:
184,32 €
-
30Pagal užsakymą
-
Naujas Produktas
|
„Mouser“ Dalies Nr.
726-FF800R12KE7DS8HP
Naujas Produktas
|
Infineon Technologies
|
Igbt Moduliai 62 mm C-Series module with TRENCHSTOPIGBT7 and emitter controlled 7 diode
|
|
30Pagal užsakymą
|
|
Min.: 1
Daugkart.: 1
|
|
|
IGBT Modules
|
Half Bridge
|
1.2 kV
|
1.5 V
|
800 A
|
100 nA
|
|
Module
|
- 40 C
|
+ 175 C
|
Tray
|
|
|
|
Igbt Moduliai Modules IGBT - IAP IGBT
- VS-GT100TS065N
- Vishay Semiconductors
-
1:
58,29 €
-
30Tikėtina 2026-10-20
|
„Mouser“ Dalies Nr.
78-VS-GT100TS065N
|
Vishay Semiconductors
|
Igbt Moduliai Modules IGBT - IAP IGBT
|
|
30Tikėtina 2026-10-20
|
|
Min.: 1
Daugkart.: 1
|
|
|
IGBT Modules
|
Half Bridge
|
|
650 V
|
96 A
|
120 nA
|
259 W
|
Module
|
- 40 C
|
+ 175 C
|
Bulk
|
|
|
|
Igbt Moduliai Modules IGBT - IAP IGBT
- VS-GT200TS065N
- Vishay Semiconductors
-
1:
79,22 €
-
15Tikėtina 2026-08-10
|
„Mouser“ Dalies Nr.
78-VS-GT200TS065N
|
Vishay Semiconductors
|
Igbt Moduliai Modules IGBT - IAP IGBT
|
|
15Tikėtina 2026-08-10
|
|
|
79,22 €
|
|
|
70,27 €
|
|
|
59,82 €
|
|
Min.: 1
Daugkart.: 1
|
|
|
IGBT Modules
|
Half Bridge
|
|
650 V
|
193 A
|
240 nA
|
517 W
|
Module
|
- 40 C
|
+ 175 C
|
Bulk
|
|