Diskretieji Puslaidininkiai

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Pasirinkite Vaizdas Dalies Nr. Gam. Aprašymas Duomenų Lapas Prieinamumas Kainodara (EUR) Filtruokite lentelėje pateiktus rezultatus pagal vieneto kainą, remdamiesi kiekiu. Qty. RoHS Gaminio tipas Technologijos Montavimo stilius Pakuotė / Korpusas
STMicroelectronics SiC MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 8.5 mOhm typ., 239 A in a STPAK high creepage package 33Prieinamumas
61Pagal užsakymą
Min.: 1
Daugkart.: 1

SiC MOSFETS SiC Through Hole STPAK-4
STMicroelectronics GaN FET 700 V, 106 mOhm typ., 17 A, e-mode PowerGaN transistor 637Prieinamumas
Min.: 1
Daugkart.: 1
: 3 000

GaN FETs GaN SMD/SMT PowerFLAT-8
STMicroelectronics SCHOTTKY Diodes ir Lygintuvai Rad-hard 40 V, 3 A Schottky rectifier in SOD128Flat package 283Prieinamumas
500Tikėtina 2026-08-13
Min.: 1
Daugkart.: 1
: 500

Schottky Diodes & Rectifiers Si SMD/SMT SOD-128-2
STMicroelectronics MOSFETs N-channel 600 V, 22 mOhm typ., 84 A STMESH trench T Power MOSFET 378Prieinamumas
600Tikėtina 2026-09-08
Min.: 1
Daugkart.: 1

MOSFETs Si Through Hole TO-247-3
STMicroelectronics RD MOSFET tranzistoriai RF Pwr Transistors LDMOST Plastic N Ch 1 538Prieinamumas
Min.: 1
Daugkart.: 1

RF MOSFET Transistors Si SMD/SMT PowerSO-10RF-Formed-4
STMicroelectronics Igbt Moduliai SLLIMM high power IPM, 3-phase inverter, 10 A, 1200 V short-circuit rugged IGBT 63Prieinamumas
Min.: 1
Daugkart.: 1

IGBT Modules Si Through Hole SDIPHP-30


STMicroelectronics SiC SCHOTTKY diodai 1200 V, 40 A High surge Silicon Carbide Power Schottky Diode 533Prieinamumas
Min.: 1
Daugkart.: 1

SiC Schottky Diodes
STMicroelectronics SCR 30 A 1200 V automotive grade SCR Thyristor 526Prieinamumas
Min.: 1
Daugkart.: 1
: 600

SCRs SMD/SMT HUPAK-9
STMicroelectronics RD MOSFET tranzistoriai RF POWER TRANS 1 332Prieinamumas
Min.: 1
Daugkart.: 1

RF MOSFET Transistors Si SMD/SMT PowerSO-10RF-Formed-4
STMicroelectronics MOSFETs Dual N-channel 60 V, 23 mOhm typ., 33 A STripFET F7 Power MOSFET in a PowerFLAT 41 533Prieinamumas
Min.: 1
Daugkart.: 1
: 3 000

MOSFETs Si SMD/SMT PowerFLAT-5x6-8
STMicroelectronics SCHOTTKY Diodes ir Lygintuvai 100 V, 5 A Power Schottky Trench Rectifier 11 061Prieinamumas
Min.: 1
Daugkart.: 1
: 6 000

Schottky Diodes & Rectifiers Si SMD/SMT TO-277A-3
STMicroelectronics MOSFETs N-channel 800 V, 285 mOhm typ., 12 A MDmesh K6 Power MOSFET 2 383Prieinamumas
Min.: 1
Daugkart.: 1
: 2 500

MOSFETs Si SMD/SMT DPAK-3 (TO-252-3)
STMicroelectronics RD MOSFET tranzistoriai POWER RF Transistor 3 649Prieinamumas
Min.: 1
Daugkart.: 1
: 3 000

RF MOSFET Transistors Si SMD/SMT PowerFLAT (5x5)
STMicroelectronics RD MOSFET tranzistoriai RF POWER TRANS 5 874Prieinamumas
Min.: 1
Daugkart.: 1

RF MOSFET Transistors Si SMD/SMT PowerSO-10RF-Formed-4
STMicroelectronics MOSFETs N-Ch 650V 0.061 Ohm 40 A Mdmesh M5 2 439Prieinamumas
Min.: 1
Daugkart.: 1
: 3 000

MOSFETs Si SMD/SMT PowerFLAT-8x8-5

STMicroelectronics Mažų signalų perjungimo diodai 600V, 25A, Ultrafast diode 36 525Prieinamumas
Min.: 1
Daugkart.: 1
: 2 500

Diodes - General Purpose, Power, Switching SMD/SMT
STMicroelectronics MOSFETs Automotive grade N-channel 650V 35 mOhm 64A MDmesh DM6 half-bridge Power MOSFET 173Prieinamumas
Min.: 1
Daugkart.: 1
: 200

MOSFETs Si
STMicroelectronics ESD apsaugos diodai / TVS diodai Automotive 5000 W, 33 V TVS 2 364Prieinamumas
Min.: 1
Daugkart.: 1
: 2 500

STMicroelectronics SiC SCHOTTKY diodai Automotive 1200 V, 20A power Schottky High Surge silicon carbide diode 571Prieinamumas
Min.: 1
Daugkart.: 1

SiC Schottky Diodes Through Hole DO-247-2
STMicroelectronics SCHOTTKY Diodes ir Lygintuvai Automotive 100 V, 5 A, Power Schottky Trench Rectifier 9 415Prieinamumas
Min.: 1
Daugkart.: 1
: 2 500

Schottky Diodes & Rectifiers Si SMD/SMT DPAK-3 (TO-252-3)
STMicroelectronics SCHOTTKY Diodes ir Lygintuvai Automotive 100 V, 8 A Power Schottky Trench Rectifier 5 567Prieinamumas
Min.: 1
Daugkart.: 1
: 6 000

Schottky Diodes & Rectifiers Si SMD/SMT TO-277A-3
STMicroelectronics MOSFETs N-channel 650 V, 19.9 mOhm typ., 95 A MDmesh M9 Power MOSFET 489Prieinamumas
Min.: 1
Daugkart.: 1

MOSFETs Si Through Hole TO-247-4
STMicroelectronics MOSFETs N-channel 650 V, 39 mOhm typ., 54 A MDmesh M9 Power MOSFET 580Prieinamumas
Min.: 1
Daugkart.: 1

MOSFETs Si Through Hole TO-247-4
STMicroelectronics SCR 16 A 800 V High Temperature SCR 3 994Prieinamumas
Min.: 1
Daugkart.: 1
: 1 000

SCRs

STMicroelectronics Dvipoliai tranzistoriai – BJT NPN Power Transistor 11 068Prieinamumas
Min.: 1
Daugkart.: 1

BJTs - Bipolar Transistors Si Through Hole ISOWATT-218FX-3