|
|
MOSFETs 200V 3.3mohm 400A Ultra Junction X4-Class Power MOSFET in PLUS247
- IXTX400N20X4
- IXYS
-
1:
25,09 €
-
315Prieinamumas
-
Naujas Produktas
|
„Mouser“ Dalies Nr.
747-IXTX400N20X4
Naujas Produktas
|
IXYS
|
MOSFETs 200V 3.3mohm 400A Ultra Junction X4-Class Power MOSFET in PLUS247
|
|
315Prieinamumas
|
|
|
25,09 €
|
|
|
20,24 €
|
|
|
17,71 €
|
|
|
16,69 €
|
|
Min.: 1
Daugkart.: 1
|
|
|
|
|
SiC MOSFET SIC MOS TO247-3L 23MOHM 650V M3S
- NTHL023N065M3S
- onsemi
-
1:
10,72 €
-
3 456Prieinamumas
|
„Mouser“ Dalies Nr.
863-NTHL023N065M3S
|
onsemi
|
SiC MOSFET SIC MOS TO247-3L 23MOHM 650V M3S
|
|
3 456Prieinamumas
|
|
|
10,72 €
|
|
|
7,53 €
|
|
|
5,41 €
|
|
Min.: 1
Daugkart.: 1
Maks.: 480
|
|
|
|
|
SCR NEW INPUT THYRISTOR - SUPER-248
- VS-70TPS16-M3
- Vishay Semiconductors
-
1:
13,35 €
-
973Prieinamumas
|
„Mouser“ Dalies Nr.
78-VS-70TPS16-M3
|
Vishay Semiconductors
|
SCR NEW INPUT THYRISTOR - SUPER-248
|
|
973Prieinamumas
|
|
|
13,35 €
|
|
|
10,17 €
|
|
|
8,46 €
|
|
|
7,54 €
|
|
|
7,15 €
|
|
Min.: 1
Daugkart.: 1
|
|
|
|
|
SiC SCHOTTKY diodai RECT 650V 20A RDL POWER SIC
- VS-3C20CP07L-M3
- Vishay Semiconductors
-
1:
6,55 €
-
512Prieinamumas
|
„Mouser“ Dalies Nr.
78-VS-3C20CP07L-M3
|
Vishay Semiconductors
|
SiC SCHOTTKY diodai RECT 650V 20A RDL POWER SIC
|
|
512Prieinamumas
|
|
|
6,55 €
|
|
|
3,60 €
|
|
|
3,07 €
|
|
|
2,78 €
|
|
Min.: 1
Daugkart.: 1
|
|
|
|
|
MOSFETs MOSFT 200V 49A 40mOhm 156nCAC
- IRFP260MPBF
- Infineon Technologies
-
1:
3,41 €
-
23 399Prieinamumas
|
„Mouser“ Dalies Nr.
942-IRFP260MPBF
|
Infineon Technologies
|
MOSFETs MOSFT 200V 49A 40mOhm 156nCAC
|
|
23 399Prieinamumas
|
|
|
3,41 €
|
|
|
1,92 €
|
|
|
1,34 €
|
|
|
1,21 €
|
|
Min.: 1
Daugkart.: 1
|
|
|
|
|
MOSFETs N-channel 600 V, 22 mOhm typ., 84 A STMESH trench T Power MOSFET
- STWA60N028T
- STMicroelectronics
-
1:
6,08 €
-
363Prieinamumas
-
600Tikėtina 2026-09-18
-
Naujas Produktas
|
„Mouser“ Dalies Nr.
511-STWA60N028T
Naujas Produktas
|
STMicroelectronics
|
MOSFETs N-channel 600 V, 22 mOhm typ., 84 A STMESH trench T Power MOSFET
|
|
363Prieinamumas
600Tikėtina 2026-09-18
|
|
|
6,08 €
|
|
|
4,07 €
|
|
|
3,27 €
|
|
|
2,91 €
|
|
|
Peržiūrėti
|
|
|
2,39 €
|
|
|
2,37 €
|
|
|
Pasiūlymas
|
|
Min.: 1
Daugkart.: 1
|
|
|
|
|
SiC SCHOTTKY diodai 1200V each 10A High Surge Dual SiC diode in TO247-3
- BSDW20G120C2
- Bourns
-
1:
9,53 €
-
2 918Prieinamumas
|
„Mouser“ Dalies Nr.
652-BSDW20G120C2
|
Bourns
|
SiC SCHOTTKY diodai 1200V each 10A High Surge Dual SiC diode in TO247-3
|
|
2 918Prieinamumas
|
|
|
9,53 €
|
|
|
6,73 €
|
|
|
5,62 €
|
|
|
4,85 €
|
|
|
4,84 €
|
|
Min.: 1
Daugkart.: 1
|
|
|
|
|
IGBT IXYH55N120C4H1
- IXYH55N120C4H1
- IXYS
-
1:
16,89 €
-
629Prieinamumas
|
„Mouser“ Dalies Nr.
576-IXYH55N120C4H1
|
IXYS
|
IGBT IXYH55N120C4H1
|
|
629Prieinamumas
|
|
|
16,89 €
|
|
|
11,42 €
|
|
|
9,87 €
|
|
|
9,37 €
|
|
|
9,06 €
|
|
Min.: 1
Daugkart.: 1
|
|
|
|
|
MOSFETs SprFET2 650V 190mohm FRFET TO247 longlea
- FCH190N65F-F155
- onsemi
-
1:
6,67 €
-
5 930Prieinamumas
|
„Mouser“ Dalies Nr.
512-FCH190N65F_F155
|
onsemi
|
MOSFETs SprFET2 650V 190mohm FRFET TO247 longlea
|
|
5 930Prieinamumas
|
|
|
6,67 €
|
|
|
4,52 €
|
|
|
3,23 €
|
|
Min.: 1
Daugkart.: 1
|
|
|
|
|
MOSFETs HIGH POWER_NEW
- IPW60R040C7XKSA1
- Infineon Technologies
-
1:
11,17 €
-
2 636Prieinamumas
|
„Mouser“ Dalies Nr.
726-IPW60R040C7XKSA1
|
Infineon Technologies
|
MOSFETs HIGH POWER_NEW
|
|
2 636Prieinamumas
|
|
|
11,17 €
|
|
|
6,73 €
|
|
|
5,83 €
|
|
Min.: 1
Daugkart.: 1
|
|
|
|
|
SiC MOSFET 20MW 1200V
- NVHL020N120SC1
- onsemi
-
1:
45,00 €
-
893Prieinamumas
|
„Mouser“ Dalies Nr.
863-NVHL020N120SC1
|
onsemi
|
SiC MOSFET 20MW 1200V
|
|
893Prieinamumas
|
|
Min.: 1
Daugkart.: 1
|
|
|
|
|
SCHOTTKY Diodes ir Lygintuvai 2x 20A 100V Rectifier
- MBR40100WT
- Littelfuse
-
1:
4,88 €
-
7 662Prieinamumas
|
„Mouser“ Dalies Nr.
576-MBR40100WT
|
Littelfuse
|
SCHOTTKY Diodes ir Lygintuvai 2x 20A 100V Rectifier
|
|
7 662Prieinamumas
|
|
|
4,88 €
|
|
|
3,28 €
|
|
|
2,58 €
|
|
|
2,46 €
|
|
Min.: 1
Daugkart.: 1
|
|
|
|
|
IGBT 650 V, 40 A IGBT with anti-parallel diode in TO-247 package
- IKW40N65ET7XKSA1
- Infineon Technologies
-
1:
4,64 €
-
7 800Prieinamumas
|
„Mouser“ Dalies Nr.
726-IKW40N65ET7XKSA1
|
Infineon Technologies
|
IGBT 650 V, 40 A IGBT with anti-parallel diode in TO-247 package
|
|
7 800Prieinamumas
|
|
|
4,64 €
|
|
|
2,61 €
|
|
|
2,08 €
|
|
|
1,89 €
|
|
|
1,85 €
|
|
Min.: 1
Daugkart.: 1
|
|
|
|
|
MOSFETs MOSFET
- IXFX64N60P
- IXYS
-
1:
24,00 €
-
1 148Prieinamumas
|
„Mouser“ Dalies Nr.
747-IXFX64N60P
|
IXYS
|
MOSFETs MOSFET
|
|
1 148Prieinamumas
|
|
Min.: 1
Daugkart.: 1
|
|
|
|
|
IGBT TO247 1200V 85A XPT
- IXYH85N120A4
- IXYS
-
1:
19,45 €
-
1 352Prieinamumas
|
„Mouser“ Dalies Nr.
747-IXYH85N120A4
|
IXYS
|
IGBT TO247 1200V 85A XPT
|
|
1 352Prieinamumas
|
|
|
19,45 €
|
|
|
12,30 €
|
|
|
12,27 €
|
|
Min.: 1
Daugkart.: 1
|
|
|
|
|
SiC SCHOTTKY diodai RECT 650V 8A RDL POWER SIC
- VS-3C16CP07L-M3
- Vishay Semiconductors
-
1:
5,75 €
-
886Prieinamumas
|
„Mouser“ Dalies Nr.
78-VS-3C16CP07L-M3
|
Vishay Semiconductors
|
SiC SCHOTTKY diodai RECT 650V 8A RDL POWER SIC
|
|
886Prieinamumas
|
|
|
5,75 €
|
|
|
3,49 €
|
|
|
2,68 €
|
|
|
2,31 €
|
|
Min.: 1
Daugkart.: 1
|
|
|
|
|
SiC MOSFET N-Ch 1200V SiC 31A 80mOhm TrenchMOS
- SCT3080KLGC11
- ROHM Semiconductor
-
1:
20,57 €
-
1 090Prieinamumas
|
„Mouser“ Dalies Nr.
755-SCT3080KLGC11
|
ROHM Semiconductor
|
SiC MOSFET N-Ch 1200V SiC 31A 80mOhm TrenchMOS
|
|
1 090Prieinamumas
|
|
|
20,57 €
|
|
|
13,05 €
|
|
|
11,65 €
|
|
Min.: 1
Daugkart.: 1
|
|
|
|
|
IGBT 1200 V, 100 A IGBT7 S7 with anti-parallel diode in TO247PLUS-3pin package
- IKQ100N120CS7XKSA1
- Infineon Technologies
-
1:
11,06 €
-
1 112Prieinamumas
|
„Mouser“ Dalies Nr.
726-IKQ100N120CS7XKS
|
Infineon Technologies
|
IGBT 1200 V, 100 A IGBT7 S7 with anti-parallel diode in TO247PLUS-3pin package
|
|
1 112Prieinamumas
|
|
|
11,06 €
|
|
|
6,66 €
|
|
|
5,83 €
|
|
Min.: 1
Daugkart.: 1
|
|
|
|
|
IGBT 1200 V, 120 A IGBT7 S7 with anti-parallel diode in TO247PLUS-3pin package
- IKQ120N120CS7XKSA1
- Infineon Technologies
-
1:
9,41 €
-
531Prieinamumas
|
„Mouser“ Dalies Nr.
726-IKQ120N120CS7XKS
|
Infineon Technologies
|
IGBT 1200 V, 120 A IGBT7 S7 with anti-parallel diode in TO247PLUS-3pin package
|
|
531Prieinamumas
|
|
|
9,41 €
|
|
|
6,93 €
|
|
|
6,83 €
|
|
|
6,20 €
|
|
Min.: 1
Daugkart.: 1
|
|
|
|
|
SiC MOSFET SIC MOS TO247-3L 30MOHM 1200V M3
- NTHL030N120M3S
- onsemi
-
1:
9,77 €
-
290Prieinamumas
|
„Mouser“ Dalies Nr.
863-NTHL030N120M3S
|
onsemi
|
SiC MOSFET SIC MOS TO247-3L 30MOHM 1200V M3
|
|
290Prieinamumas
|
|
Min.: 1
Daugkart.: 1
Maks.: 10
|
|
|
|
|
MOSFETs 30 Amps 600V
- IXTH30N60L2
- IXYS
-
1:
19,45 €
-
5 113Prieinamumas
|
„Mouser“ Dalies Nr.
747-IXTH30N60L2
|
IXYS
|
MOSFETs 30 Amps 600V
|
|
5 113Prieinamumas
|
|
|
19,45 €
|
|
|
13,18 €
|
|
|
12,96 €
|
|
Min.: 1
Daugkart.: 1
|
|
|
|
|
MOSFETs Single N-Ch 500V .12Ohm SMPS
- FDH44N50
- onsemi
-
1:
9,24 €
-
6 574Prieinamumas
|
„Mouser“ Dalies Nr.
512-FDH44N50
|
onsemi
|
MOSFETs Single N-Ch 500V .12Ohm SMPS
|
|
6 574Prieinamumas
|
|
Min.: 1
Daugkart.: 1
Maks.: 60
|
|
|
|
|
SCHOTTKY Diodes ir Lygintuvai 2x 30A 45V Rectifier
- MBR6045WT
- Littelfuse
-
1:
4,84 €
-
11 735Prieinamumas
|
„Mouser“ Dalies Nr.
576-MBR6045WT
|
Littelfuse
|
SCHOTTKY Diodes ir Lygintuvai 2x 30A 45V Rectifier
|
|
11 735Prieinamumas
|
|
|
4,84 €
|
|
|
2,83 €
|
|
|
2,43 €
|
|
Min.: 1
Daugkart.: 1
|
|
|
|
|
IGBT 650V40A FS4 IGBT TO-247LL
- AFGHL40T65SQD
- onsemi
-
1:
6,18 €
-
6 642Prieinamumas
|
„Mouser“ Dalies Nr.
863-AFGHL40T65SQD
|
onsemi
|
IGBT 650V40A FS4 IGBT TO-247LL
|
|
6 642Prieinamumas
|
|
|
6,18 €
|
|
|
3,36 €
|
|
|
2,81 €
|
|
|
2,67 €
|
|
Min.: 1
Daugkart.: 1
|
|
|
|
|
MOSFETs SUPERFET3 650V
- NTHL110N65S3F
- onsemi
-
1:
7,72 €
-
9 611Prieinamumas
|
„Mouser“ Dalies Nr.
863-NTHL110N65S3F
|
onsemi
|
MOSFETs SUPERFET3 650V
|
|
9 611Prieinamumas
|
|
|
7,72 €
|
|
|
4,53 €
|
|
|
4,18 €
|
|
Min.: 1
Daugkart.: 1
|
|
|
Lietuva
