|
|
RF Stiprintuvas RF SILICON MMIC
- BGA7H1N6E6327XTSA1
- Infineon Technologies
-
1:
0,757 €
-
6 627Prieinamumas
|
„Mouser“ Dalies Nr.
726-BGA7H1N6E6327XTS
|
Infineon Technologies
|
RF Stiprintuvas RF SILICON MMIC
|
|
6 627Prieinamumas
|
|
Min.: 1
Daugkart.: 1
:
15 000
|
|
|
2.3 GHz to 2.69 GHz
|
1.5 V to 3.3 V
|
4.7 mA
|
12.5 dB
|
0.6 dB
|
Low Noise Amplifiers
|
SMD/SMT
|
TSNP-6
|
SiGe
|
- 1 dBm
|
6 dBm
|
- 40 C
|
+ 85 C
|
|
|
Reel, Cut Tape, MouseReel
|
|
|
|
RF Stiprintuvas Silicon RF Receiver MMIC
- BGA 715N7 E6327
- Infineon Technologies
-
1:
1,16 €
-
4 255Prieinamumas
-
NRND
|
„Mouser“ Dalies Nr.
726-BGA715N7E6327
NRND
|
Infineon Technologies
|
RF Stiprintuvas Silicon RF Receiver MMIC
|
|
4 255Prieinamumas
|
|
Min.: 1
Daugkart.: 1
:
7 500
|
|
|
1.55 GHz to 1.615 GHz
|
1.5 V to 3.3 V
|
3.3 mA
|
20 dB
|
0.7 dB
|
Low Noise Amplifiers
|
SMD/SMT
|
TSNP-7
|
SiGe
|
- 15.5 dBm
|
- 7 dBm
|
- 40 C
|
+ 85 C
|
|
BGA715N7
|
Reel, Cut Tape, MouseReel
|
|
|
|
RF Stiprintuvas RF MMIC 3 TO 6 GHZ
- BGA9H1MN9E6329XTSA1
- Infineon Technologies
-
1:
0,662 €
-
10 852Prieinamumas
|
„Mouser“ Dalies Nr.
726-BGA9H1MN9E6329XT
|
Infineon Technologies
|
RF Stiprintuvas RF MMIC 3 TO 6 GHZ
|
|
10 852Prieinamumas
|
|
Min.: 1
Daugkart.: 1
:
15 000
|
|
|
1.4 GHz to 2.7 GHz
|
1.8 V
|
5.8 mA
|
20.2 dB
|
11.5 dB
|
Low Noise Amplifiers
|
SMD/SMT
|
TSNP-9-2
|
Si
|
- 17 dBm
|
|
|
|
|
|
Reel, Cut Tape
|
|
|
|
RF Stiprintuvas 7x LNA Bank with Output Cross-Switch for 5G
- BGM787U50E6327XUMA1
- Infineon Technologies
-
1:
2,24 €
-
4 880Prieinamumas
-
Naujas Produktas
|
„Mouser“ Dalies Nr.
726-BGM787U50E6327XU
Naujas Produktas
|
Infineon Technologies
|
RF Stiprintuvas 7x LNA Bank with Output Cross-Switch for 5G
|
|
4 880Prieinamumas
|
|
Min.: 1
Daugkart.: 1
:
5 000
|
|
|
600 MHz to 2.7 GHz
|
1.2 V, 1.8 V
|
|
21 dB
|
0.8 dB
|
|
SMD/SMT
|
PG-WF2BGA-50-2
|
|
|
|
|
|
|
|
Reel, Cut Tape
|
|
|
|
RF Stiprintuvas WIRELESS INFRASTRUCTURE
- BGAP3D30HE6327XUMA1
- Infineon Technologies
-
1:
4,41 €
-
5 907Prieinamumas
-
"Mouser Naujiena"
|
„Mouser“ Dalies Nr.
726-BGAP3D30HE6327XU
"Mouser Naujiena"
|
Infineon Technologies
|
RF Stiprintuvas WIRELESS INFRASTRUCTURE
|
|
5 907Prieinamumas
|
|
Min.: 1
Daugkart.: 1
:
6 000
|
|
|
3.1 GHz to 4.2 GHz
|
4.75 V to 5.25 V
|
|
38.5 dB
|
3.3 dB
|
Driver Amplifiers
|
SMD/SMT
|
VQFN-24
|
|
31 dBm
|
41.1 dBm
|
- 40 C
|
+ 115 C
|
|
|
Reel, Cut Tape
|
|
|
|
RF Stiprintuvas WIRELESS INFRASTRUCTURE
- BGAP2D20AE6327XTSA1
- Infineon Technologies
-
1:
4,97 €
-
1 995Prieinamumas
|
„Mouser“ Dalies Nr.
726-BGAP2D20AE6327XT
|
Infineon Technologies
|
RF Stiprintuvas WIRELESS INFRASTRUCTURE
|
|
1 995Prieinamumas
|
|
Min.: 1
Daugkart.: 1
:
2 000
|
|
|
2.3 GHz to 2.7 GHz
|
4.75 V to 5.25 V
|
|
35.1 dB
|
3.4 dB
|
Power Amplifiers
|
SMD/SMT
|
TSNP-16
|
Si
|
28.9 dBm
|
34.3 dBm
|
- 40 C
|
+ 115 C
|
|
|
Reel, Cut Tape
|
|
|
|
RF Stiprintuvas WIRELESS INFRASTRUCTURE
- BGAP2D30AE6327XTSA1
- Infineon Technologies
-
1:
4,97 €
-
1 995Prieinamumas
|
„Mouser“ Dalies Nr.
726-BGAP2D30AE6327XT
|
Infineon Technologies
|
RF Stiprintuvas WIRELESS INFRASTRUCTURE
|
|
1 995Prieinamumas
|
|
Min.: 1
Daugkart.: 1
:
2 000
|
|
|
3.3 GHz to 4.2 GHz
|
4.75 V to 5.25 V
|
|
35.2 dB
|
3.1 dB
|
Power Amplifiers
|
SMD/SMT
|
TSNP-16
|
Si
|
28.5 dBm
|
34.5 dBm
|
- 40 C
|
+ 115 C
|
|
|
Reel, Cut Tape
|
|
|
|
RF Stiprintuvas WIRELESS INFRASTRUCTURE
- BGAP2S20AE6327XTSA1
- Infineon Technologies
-
1:
4,94 €
-
1 873Prieinamumas
|
„Mouser“ Dalies Nr.
726-BGAP2S20AE6327XT
|
Infineon Technologies
|
RF Stiprintuvas WIRELESS INFRASTRUCTURE
|
|
1 873Prieinamumas
|
|
Min.: 1
Daugkart.: 1
:
2 000
|
|
|
2.3 GHz to 2.7 GHz
|
4.75 V to 5.25 V
|
|
34.8 dB
|
3.8 dB
|
Power Amplifiers
|
SMD/SMT
|
TSNP-16
|
Si
|
28.9 dBm
|
34.2 dBm
|
- 40 C
|
+ 115 C
|
|
|
Reel, Cut Tape
|
|
|
|
RF Stiprintuvas WIRELESS INFRASTRUCTURE
- BGAP2S30AE6327XTSA1
- Infineon Technologies
-
1:
4,94 €
-
870Prieinamumas
|
„Mouser“ Dalies Nr.
726-BGAP2S30AE6327XT
|
Infineon Technologies
|
RF Stiprintuvas WIRELESS INFRASTRUCTURE
|
|
870Prieinamumas
|
|
Min.: 1
Daugkart.: 1
:
2 000
|
|
|
3.3 GHz to 4.2 GHz
|
4.75 V to 5.25 V
|
|
35 dB
|
3.2 dB
|
Power Amplifiers
|
SMD/SMT
|
TSNP-16
|
Si
|
28.5 dBm
|
34.1 dBm
|
- 40 C
|
+ 115 C
|
|
|
Reel, Cut Tape, MouseReel
|
|
|
|
RF Stiprintuvas RF SILICON MMIC
- BGA725L6E6327FTSA1
- Infineon Technologies
-
1:
0,353 €
-
91 804Prieinamumas
-
60 000Tikėtina 2026-11-26
|
„Mouser“ Dalies Nr.
726-BGA725L6E6327FTS
|
Infineon Technologies
|
RF Stiprintuvas RF SILICON MMIC
|
|
91 804Prieinamumas
60 000Tikėtina 2026-11-26
|
|
Min.: 1
Daugkart.: 1
:
15 000
|
|
|
1.55 GHz to 1.615 GHz
|
1.5 V to 3.6 V
|
3.6 mA
|
20 dB
|
0.65 dB
|
Low Noise Amplifiers
|
SMD/SMT
|
TSLP-6
|
SiGe
|
- 15 dBm
|
- 2 dBm
|
- 40 C
|
+ 85 C
|
|
BGA725L6
|
Reel, Cut Tape, MouseReel
|
|
|
|
RF Stiprintuvas Silicon RF Receiver MMIC
- BGA715N7E6327XTSA2
- Infineon Technologies
-
1:
1,17 €
-
249Prieinamumas
-
NRND
|
„Mouser“ Dalies Nr.
726-BGA715N7E6327XTS
NRND
|
Infineon Technologies
|
RF Stiprintuvas Silicon RF Receiver MMIC
|
|
249Prieinamumas
|
|
Min.: 1
Daugkart.: 1
:
7 500
|
|
|
|
|
|
|
|
|
|
TSNP-7
|
Si
|
|
|
|
|
|
BGA715N7
|
Reel, Cut Tape, MouseReel
|
|
|
|
RF Stiprintuvas RF MMIC SUB 3 GHZ
- BGA7L1BN6E6327XTSA1
- Infineon Technologies
-
1:
0,516 €
-
5 602Prieinamumas
-
15 000Tikėtina 2027-07-08
|
„Mouser“ Dalies Nr.
726-BGA7L1BN6E6327XT
|
Infineon Technologies
|
RF Stiprintuvas RF MMIC SUB 3 GHZ
|
|
5 602Prieinamumas
15 000Tikėtina 2027-07-08
|
|
Min.: 1
Daugkart.: 1
:
15 000
|
|
|
716 MHz to 960 MHz
|
1.5 V to 3.6 V
|
4.9 mA
|
13.6 dB
|
0.75 dB
|
Low Noise Amplifiers
|
SMD/SMT
|
TSNP-6-2
|
SiGe
|
- 1 dBm
|
5 dBm
|
- 40 C
|
+ 85 C
|
|
|
Reel, Cut Tape, MouseReel
|
|
|
|
RF Stiprintuvas RF MMIC 3 TO 6 GHZ
- BGA9H1BN6E6327XTSA1
- Infineon Technologies
-
1:
0,473 €
-
12 980Prieinamumas
|
„Mouser“ Dalies Nr.
726-BGA9H1BN6E6327XT
|
Infineon Technologies
|
RF Stiprintuvas RF MMIC 3 TO 6 GHZ
|
|
12 980Prieinamumas
|
|
Min.: 1
Daugkart.: 1
:
12 000
|
|
|
2.3 GHz to 2.7 GHz
|
1.1 V to 3.3 V
|
2.2 mA
|
20.3 dB
|
0.6 dB
|
General Purpose Amplifiers
|
SMD/SMT
|
TSNP-6-10
|
Si
|
- 17 dBm
|
- 7 dBm
|
- 40 C
|
+ 85 C
|
|
|
Reel, Cut Tape, MouseReel
|
|
|
|
RF Stiprintuvas RF SILICON MMIC
- BGA616H6327XTSA1
- Infineon Technologies
-
1:
1,16 €
-
8 360Prieinamumas
-
NRND
|
„Mouser“ Dalies Nr.
726-BGA616H6327XTSA1
NRND
|
Infineon Technologies
|
RF Stiprintuvas RF SILICON MMIC
|
|
8 360Prieinamumas
|
|
Min.: 1
Daugkart.: 1
:
3 000
|
|
|
0 Hz to 2.7 GHz
|
6 V
|
60 mA
|
19 dB
|
2.5 dB
|
Driver Amplifiers
|
SMD/SMT
|
SOT-343-4
|
SiGe
|
18 dBm
|
29 dBm
|
- 65 C
|
+ 150 C
|
|
BGA616
|
Reel, Cut Tape, MouseReel
|
|
|
|
RF Stiprintuvas RF MMIC SUB 3 GHZ
- BGA729N6E6327XTSA1
- Infineon Technologies
-
1:
0,757 €
-
6 063Prieinamumas
-
NRND
|
„Mouser“ Dalies Nr.
726-BGA729N6E6327XTS
NRND
|
Infineon Technologies
|
RF Stiprintuvas RF MMIC SUB 3 GHZ
|
|
6 063Prieinamumas
|
|
Min.: 1
Daugkart.: 1
:
15 000
|
|
|
70 MHz to 1 GHz
|
1.5 V to 3.3 V
|
6.3 mA
|
16.3 dB
|
1.05 dB
|
Low Noise Amplifiers
|
SMD/SMT
|
TSNP-6-2
|
SiGe
|
- 15 dBm
|
- 6 dBm
|
- 40 C
|
+ 85 C
|
|
|
Reel, Cut Tape, MouseReel
|
|
|
|
RF Stiprintuvas RF MMIC SUB 3 GHZ
- BGA7H1BN6E6327XTSA1
- Infineon Technologies
-
1:
0,533 €
-
1 435Prieinamumas
|
„Mouser“ Dalies Nr.
726-BGA7H1BN6E6327XT
|
Infineon Technologies
|
RF Stiprintuvas RF MMIC SUB 3 GHZ
|
|
1 435Prieinamumas
|
|
Min.: 1
Daugkart.: 1
:
15 000
|
|
|
1.805 GHz to 2.69 GHz
|
1.5 V to 3.6 V
|
4.3 mA
|
12.3 dB
|
0.85 dB
|
Low Noise Amplifiers
|
SMD/SMT
|
|
SiGe
|
5 dBm
|
16 dBm
|
- 40 C
|
+ 85 C
|
|
|
Reel, Cut Tape, MouseReel
|
|
|
|
RF Stiprintuvas RF SILICON MMIC
- BGA 427 H6327
- Infineon Technologies
-
1:
0,834 €
-
55Prieinamumas
-
NRND
|
„Mouser“ Dalies Nr.
726-BGA427H6327
NRND
|
Infineon Technologies
|
RF Stiprintuvas RF SILICON MMIC
|
|
55Prieinamumas
|
|
Min.: 1
Daugkart.: 1
:
3 000
|
|
|
100 MHz to 3 GHz
|
2 V to 5 V
|
25 mA
|
18.5 dB
|
2.2 dB
|
General Purpose Amplifiers
|
SMD/SMT
|
SOT-343-4
|
Si
|
|
7 dBm
|
- 65 C
|
+ 150 C
|
AEC-Q100
|
BGA427
|
Reel, Cut Tape, MouseReel
|
|
|
|
RF Stiprintuvas RF SILICON MMIC
- BGA427H6327XTSA1
- Infineon Technologies
-
1:
0,757 €
-
5Prieinamumas
-
9 000Pagal užsakymą
-
NRND
|
„Mouser“ Dalies Nr.
726-BGA427H6327XTSA1
NRND
|
Infineon Technologies
|
RF Stiprintuvas RF SILICON MMIC
|
|
5Prieinamumas
9 000Pagal užsakymą
|
|
Min.: 1
Daugkart.: 1
:
3 000
|
|
|
100 MHz to 3 GHz
|
2 V to 5 V
|
9.4 mA
|
22 dB
|
2.2 dB
|
General Purpose Amplifiers
|
SMD/SMT
|
SOT-343-4
|
Si
|
|
7 dBm
|
- 65 C
|
+ 150 C
|
AEC-Q100
|
BGA427
|
Reel, Cut Tape, MouseReel
|
|
|
|
RF Stiprintuvas RF MMIC SUB 3 GHZ
- BGA125N6E6327XTSA1
- Infineon Technologies
-
1:
0,353 €
-
143 964Pagal užsakymą
|
„Mouser“ Dalies Nr.
726-BGA125N6E6327XTS
|
Infineon Technologies
|
RF Stiprintuvas RF MMIC SUB 3 GHZ
|
|
143 964Pagal užsakymą
Pagal užsakymą:
8 964 Tikėtina 2026-11-19
30 000 Tikėtina 2026-12-24
Gamintojo numatytas pristatymo laikas
20 Savaičių
|
|
Min.: 1
Daugkart.: 1
:
15 000
|
|
|
1.164 GHz to 1.3 GHz
|
1.1 V to 3.3 V
|
1.3 mA
|
20 dB
|
0.8 dB
|
Low Noise Amplifiers
|
SMD/SMT
|
|
SiGe
|
- 17 dBm
|
2 dBm
|
- 40 C
|
+ 85 C
|
|
|
Reel, Cut Tape, MouseReel
|
|
|
|
RF Stiprintuvas RF MMIC SUB 3 GHZ
- BGA525N6E6327XTSA1
- Infineon Technologies
-
1:
0,31 €
-
95 000Pagal užsakymą
|
„Mouser“ Dalies Nr.
726-BGA525N6E6327XTS
|
Infineon Technologies
|
RF Stiprintuvas RF MMIC SUB 3 GHZ
|
|
95 000Pagal užsakymą
|
|
Min.: 1
Daugkart.: 1
:
12 000
|
|
|
1.164 GHz to 1.615 GHz
|
1.1 V to 3.3 V
|
1.5 mA
|
21 dB
|
0.7 dB
|
Low Noise Amplifiers
|
SMD/SMT
|
TSNP-6-10
|
Si
|
|
|
|
|
|
|
Reel, Cut Tape, MouseReel
|
|
|
|
RF Stiprintuvas RF MMIC SUB 3 GHZ
- BGA535N6E6327XTSA1
- Infineon Technologies
-
1:
0,464 €
-
179 881Pagal užsakymą
|
„Mouser“ Dalies Nr.
726-BGA535N6E6327XTS
|
Infineon Technologies
|
RF Stiprintuvas RF MMIC SUB 3 GHZ
|
|
179 881Pagal užsakymą
|
|
Min.: 1
Daugkart.: 1
:
12 000
|
|
|
1.164 GHz to 1.615 GHz
|
1.1 V to 3.3 V
|
1.5 mA
|
|
0.9 dB
|
|
SMD/SMT
|
PG-TSNP-6
|
|
- 14 dBm
|
|
- 40 C
|
+ 105 C
|
|
|
Reel, Cut Tape, MouseReel
|
|
|
|
RF Stiprintuvas WIRELESS INFRASTRUCTURE
- BGMC1210E6327XUMA1
- Infineon Technologies
-
1:
7,88 €
-
18 998Tikėtina 2026-11-18
|
„Mouser“ Dalies Nr.
726-BGMC1210E6327XUM
|
Infineon Technologies
|
RF Stiprintuvas WIRELESS INFRASTRUCTURE
|
|
18 998Tikėtina 2026-11-18
|
|
Min.: 1
Daugkart.: 1
:
5 000
|
|
|
|
3.3 V
|
10 mA
|
|
|
Power Amplifiers
|
SMD/SMT
|
VQFN-32
|
|
|
|
- 40 C
|
+ 150 C
|
|
|
Reel, Cut Tape, MouseReel
|
|
|
|
RF Stiprintuvas RF BIP TRANSISTORS
- BGB 741L7ESD E6327
- Infineon Technologies
-
1:
0,877 €
-
119 900Pagal užsakymą
-
Netinkama eksploatuoti
|
„Mouser“ Dalies Nr.
726-BGB741L7ESDE63
Netinkama eksploatuoti
|
Infineon Technologies
|
RF Stiprintuvas RF BIP TRANSISTORS
|
|
119 900Pagal užsakymą
|
|
Min.: 1
Daugkart.: 1
:
7 500
|
|
|
50 MHz to 3.5 GHz
|
1.8 V to 4 V
|
10 mA
|
20 dB
|
1.05 dB
|
Low Noise Amplifiers
|
SMD/SMT
|
TSLP-7-1
|
SiGe
|
- 6.5 dBm
|
1 dBm
|
- 55 C
|
+ 150 C
|
|
BGB741L7
|
Reel, Cut Tape, MouseReel
|
|
|
|
RF Stiprintuvas RF MMIC SUB 3 GHZ
Infineon Technologies BGA824N6E6329XTSA1
- BGA824N6E6329XTSA1
- Infineon Technologies
-
1:
0,559 €
-
172 725Tikėtina 2027-04-22
|
„Mouser“ Dalies Nr.
726-BGA824N6E6329XTS
|
Infineon Technologies
|
RF Stiprintuvas RF MMIC SUB 3 GHZ
|
|
172 725Tikėtina 2027-04-22
|
|
Min.: 1
Daugkart.: 1
:
12 000
|
|
|
1.164 GHz to 1.615 GHz
|
1.5 V to 3.6 V
|
3.8 mA
|
17 dB
|
0.55 dB
|
Low Noise Amplifiers
|
SMD/SMT
|
TSNP-6
|
SiGe
|
- 9 dBm
|
2 dBm
|
- 40 C
|
+ 85 C
|
|
BGA824N6
|
Reel, Cut Tape, MouseReel
|
|
|
|
RF Stiprintuvas RF MMIC SUB 3 GHZ
- BGA123N6E6327XTSA1
- Infineon Technologies
-
1:
0,353 €
-
30 000Pagal užsakymą
|
„Mouser“ Dalies Nr.
726-BGA123N6E6327XTS
|
Infineon Technologies
|
RF Stiprintuvas RF MMIC SUB 3 GHZ
|
|
30 000Pagal užsakymą
|
|
Min.: 1
Daugkart.: 1
:
15 000
|
|
|
1.55 GHz to 1.615 GHz
|
1.1 V to 3.3 V
|
1.3 mA
|
19 dB
|
0.75 dB
|
Low Noise Amplifiers
|
SMD/SMT
|
|
SiGe
|
- 19 dBm
|
- 9 dBm
|
- 40 C
|
+ 85 C
|
|
|
Reel, Cut Tape, MouseReel
|
|