|
|
DRAM IoT RAM 128Mb OPI (x8) DDR 133MHz, 3V, Ind. Temp., BGA24
- APS12808L-3OBM-BA
- AP Memory
-
1:
3,35 €
-
8 339Prieinamumas
|
„Mouser“ Dalies Nr.
878-APS12808L3OBMBA
|
AP Memory
|
DRAM IoT RAM 128Mb OPI (x8) DDR 133MHz, 3V, Ind. Temp., BGA24
|
|
8 339Prieinamumas
|
|
Min.: 1
Daugkart.: 1
|
|
|
PSRAM (Pseudo SRAM)
|
128 Mbit
|
8 bit
|
133 MHz
|
BGA-24
|
16 M x 8
|
5.5 ns
|
2.7 V
|
3.6 V
|
- 40 C
|
+ 85 C
|
IoT RAM
|
Tray
|
|
|
|
DRAM DRAM DDR3(L) 4GB 256MX16 1866Mbps 1.35V/1.5V 96-FBGA Commercial
- KTDM4G3C618BGCEAT
- SMARTsemi
-
1:
27,84 €
-
131Prieinamumas
|
„Mouser“ Dalies Nr.
473-M4G3C618BGCEAT
|
SMARTsemi
|
DRAM DRAM DDR3(L) 4GB 256MX16 1866Mbps 1.35V/1.5V 96-FBGA Commercial
|
|
131Prieinamumas
|
|
Min.: 1
Daugkart.: 1
|
|
|
SDRAM - DDR3L
|
4 Gbit
|
16 bit
|
933 MHz
|
FBGA-96
|
256 M x 16
|
|
1.283 V
|
1.575 V
|
0 C
|
+ 85 C
|
KTDM
|
Tray
|
|
|
|
DRAM DRAM DDR4 4GB 512MX8 2666Mbps 1.2V 78-FBGA Commercial
- KTDM4G4B826BGCEAT
- SMARTsemi
-
1:
16,77 €
-
225Prieinamumas
|
„Mouser“ Dalies Nr.
473-M4G4B826BGCEAT
|
SMARTsemi
|
DRAM DRAM DDR4 4GB 512MX8 2666Mbps 1.2V 78-FBGA Commercial
|
|
225Prieinamumas
|
|
Min.: 1
Daugkart.: 1
|
|
|
SDRAM - DDR4
|
4 Gbit
|
8 bit
|
1.333 GHz
|
FBGA-78
|
512 M x 8
|
|
1.14 V
|
1.26 V
|
0 C
|
+ 85 C
|
KTDM
|
Tray
|
|
|
|
DRAM LPDDR4 16Gbit 32 200/264 WFBGA 1 WT
- MT53E512M32D1NP-046 WT:B
- Micron
-
1:
156,59 €
-
384Prieinamumas
|
„Mouser“ Dalies Nr.
340-479119-TRAY
|
Micron
|
DRAM LPDDR4 16Gbit 32 200/264 WFBGA 1 WT
|
|
384Prieinamumas
|
|
Min.: 1
Daugkart.: 1
|
|
|
SDRAM Mobile - LPDDR4
|
16 Gbit
|
32 bit
|
2.133 GHz
|
WFBGA-200
|
512 M x 32
|
|
1.06 V
|
1.95 V
|
- 30 C
|
+ 85 C
|
|
Tray
|
|
|
|
DRAM IoT RAM 256Mb OPI (x8) DDR 200MHz, 1.8V, Ind. Temp., BGA24
- APS25608N-OBR-BD
- AP Memory
-
1:
4,99 €
-
660Prieinamumas
-
4 800Tikėtina 2026-10-28
|
„Mouser“ Dalies Nr.
878-APS25608N-OBR-BD
|
AP Memory
|
DRAM IoT RAM 256Mb OPI (x8) DDR 200MHz, 1.8V, Ind. Temp., BGA24
|
|
660Prieinamumas
4 800Tikėtina 2026-10-28
|
|
Min.: 1
Daugkart.: 1
|
|
|
PSRAM (Pseudo SRAM)
|
256 Mbit
|
8 bit
|
200 MHz
|
BGA-24
|
32 M x 8
|
6.5 ns
|
1.62 V
|
1.98 V
|
- 40 C
|
+ 85 C
|
IoT RAM
|
Tray
|
|
|
|
DRAM IoT RAM 256Mb OPI (x8,x16) DDR 250MHz, 1.8V, Ind. Temp., BGA24
- APS256XXN-OB9-BG
- AP Memory
-
1:
3,88 €
-
8 984Tikėtina 2027-01-20
|
„Mouser“ Dalies Nr.
878-APS256XXN-OB9-BG
|
AP Memory
|
DRAM IoT RAM 256Mb OPI (x8,x16) DDR 250MHz, 1.8V, Ind. Temp., BGA24
|
|
8 984Tikėtina 2027-01-20
|
|
Min.: 1
Daugkart.: 1
|
|
|
PSRAM (Pseudo SRAM)
|
256 Mbit
|
8 bit / 16 bit
|
250 MHz
|
BGA-24
|
32 M x 8/16 M x 16
|
|
1.62 V
|
1.98 V
|
- 40 C
|
+ 85 C
|
IoT RAM
|
Tray
|
|
|
|
DRAM IoT RAM 128Mb OPI (x8) DDR 200MHz, 1.8V, Ind. Temp., BGA24
- APS12808L-OBM-BA
- AP Memory
-
1:
4,01 €
-
4 842Prieinamumas
|
„Mouser“ Dalies Nr.
878-APS12808L-OBM-BA
|
AP Memory
|
DRAM IoT RAM 128Mb OPI (x8) DDR 200MHz, 1.8V, Ind. Temp., BGA24
|
|
4 842Prieinamumas
|
|
Min.: 1
Daugkart.: 1
|
|
|
PSRAM (Pseudo SRAM)
|
128 Mbit
|
8 bit
|
200 MHz
|
BGA-24
|
16 M x 8
|
5.5 ns
|
1.62 V
|
1.98 V
|
- 40 C
|
+ 85 C
|
IoT RAM
|
Tray
|
|
|
|
DRAM SDRAM, 128Mb, 3.3V, 8Mx16, 166MHz (166Mbps), -40C to +85C, FBGA-54
- IM1216SDBABG-6I
- Intelligent Memory
-
1:
6,04 €
-
270Prieinamumas
|
„Mouser“ Dalies Nr.
822-IM1216SDBABG-6I
|
Intelligent Memory
|
DRAM SDRAM, 128Mb, 3.3V, 8Mx16, 166MHz (166Mbps), -40C to +85C, FBGA-54
|
|
270Prieinamumas
|
|
Min.: 1
Daugkart.: 1
|
|
|
SDRAM
|
128 Mbit
|
16 bit
|
166 MHz
|
FBGA-54
|
8 M x 16
|
5 ns
|
3 V
|
3.6 V
|
- 40 C
|
+ 85 C
|
IM1216SD
|
Tray
|
|
|
|
DRAM DRAM DDR4 4GB 256MX16 2666Mbps 1.2V 96-FBGA Industrial
- KTDM4G4B626BGIEAT
- SMARTsemi
-
1:
22,27 €
-
24Prieinamumas
|
„Mouser“ Dalies Nr.
473-M4G4B626BGIEAT
|
SMARTsemi
|
DRAM DRAM DDR4 4GB 256MX16 2666Mbps 1.2V 96-FBGA Industrial
|
|
24Prieinamumas
|
|
Min.: 1
Daugkart.: 1
|
|
|
SDRAM - DDR4
|
4 Gbit
|
16 bit
|
1.333 GHz
|
FBGA-96
|
256 M x 16
|
|
1.14 V
|
1.26 V
|
- 40 C
|
+ 85 C
|
KTDM
|
Tray
|
|
|
|
DRAM SPCM
Infineon Technologies S70KL1282DPBHI020
- S70KL1282DPBHI020
- Infineon Technologies
-
1:
5,86 €
-
2 058Prieinamumas
|
„Mouser“ Dalies Nr.
727-70KL1282DPBHI020
|
Infineon Technologies
|
DRAM SPCM
|
|
2 058Prieinamumas
|
|
Min.: 1
Daugkart.: 1
|
|
|
HyperRAM
|
128 Mbit
|
8 bit
|
166 MHz
|
|
16 M x 8
|
35 ns
|
2.7 V
|
3.6 V
|
- 40 C
|
+ 85 C
|
|
Tray
|
|
|
|
DRAM IoT RAM 64Mb OPI (x8) DDR 200MHz, 1.8V, Ind. Temp., BGA24 (OctaRAM for Renesas RZ/A SoC)
- APS6408L-OCH-BA
- AP Memory
-
1:
3,35 €
-
548Prieinamumas
|
„Mouser“ Dalies Nr.
878-APS6408L-OCH-BA
|
AP Memory
|
DRAM IoT RAM 64Mb OPI (x8) DDR 200MHz, 1.8V, Ind. Temp., BGA24 (OctaRAM for Renesas RZ/A SoC)
|
|
548Prieinamumas
|
|
Min.: 1
Daugkart.: 1
|
|
|
PSRAM (Pseudo SRAM)
|
64 Mbit
|
8 bit
|
200 MHz
|
BGA-24
|
8 M x 8
|
5.5 ns
|
1.62 V
|
1.98 V
|
- 40 C
|
+ 85 C
|
|
Tray
|
|
|
|
DRAM DRAM DDR3(L) 2GB 256MX8 1866Mbps 1.35V/1.5V 78-FBGA Industrial
- KTDM2G3C818BGIEAT
- SMARTsemi
-
1:
10,05 €
-
201Prieinamumas
|
„Mouser“ Dalies Nr.
473-M2G3C818BGIEAT
|
SMARTsemi
|
DRAM DRAM DDR3(L) 2GB 256MX8 1866Mbps 1.35V/1.5V 78-FBGA Industrial
|
|
201Prieinamumas
|
|
Min.: 1
Daugkart.: 1
|
|
|
SDRAM - DDR3L
|
2 Gbit
|
8 bit
|
933 MHz
|
FBGA-78
|
256 M x 8
|
|
1.283 V
|
1.575 V
|
- 40 C
|
+ 85 C
|
KTDM
|
Tray
|
|
|
|
DRAM IoT RAM 512Mb OPI (x8) DDR 200MHz, 1.8V, Ind. Temp., BGA24 (OctaRAM for Renesas RZ/A SoC)
- APS51208N-OCH-BD
- AP Memory
-
1:
10,47 €
-
844Prieinamumas
|
„Mouser“ Dalies Nr.
878-APS51208N-OCH-BD
|
AP Memory
|
DRAM IoT RAM 512Mb OPI (x8) DDR 200MHz, 1.8V, Ind. Temp., BGA24 (OctaRAM for Renesas RZ/A SoC)
|
|
844Prieinamumas
|
|
Min.: 1
Daugkart.: 1
|
|
|
PSRAM (Pseudo SRAM)
|
512 Mbit
|
8 bit
|
200 MHz
|
BGA-24
|
64 M x 8
|
|
1.62 V
|
1.98 V
|
- 40 C
|
+ 85 C
|
|
Tray
|
|
|
|
DRAM IoT RAM 64Mb OPI (x8) DDR 133MHz, 3V, Ind. Temp., BGA24
- APS6408L-3OBM-BA
- AP Memory
-
1:
2,48 €
-
21Prieinamumas
-
19 200Pagal užsakymą
|
„Mouser“ Dalies Nr.
878-APS6408L-3OBM-BA
|
AP Memory
|
DRAM IoT RAM 64Mb OPI (x8) DDR 133MHz, 3V, Ind. Temp., BGA24
|
|
21Prieinamumas
19 200Pagal užsakymą
Turime sandėlyje:
21 Galime išsiųsti iš karto
Pagal užsakymą:
9 600 Tikėtina 2027-02-19
9 600 Tikėtina 2027-02-22
Gamintojo numatytas pristatymo laikas
20 Savaičių
|
|
Min.: 1
Daugkart.: 1
|
|
|
PSRAM (Pseudo SRAM)
|
64 Mbit
|
8 bit
|
133 MHz
|
BGA-24
|
8 M x 8
|
5.5 ns
|
2.7 V
|
3.6 V
|
- 40 C
|
+ 85 C
|
IoT RAM
|
Tray
|
|
|
|
DRAM DRAM DDR3(L) 2GB 125MX16 1866Mbps 1.35V/1.5V 96-FBGA Industrial
- KTDM2G3C618BGIEAT
- SMARTsemi
-
1:
9,41 €
-
85Prieinamumas
|
„Mouser“ Dalies Nr.
473-M2G3C618BGIEAT
|
SMARTsemi
|
DRAM DRAM DDR3(L) 2GB 125MX16 1866Mbps 1.35V/1.5V 96-FBGA Industrial
|
|
85Prieinamumas
|
|
Min.: 1
Daugkart.: 1
|
|
|
SDRAM - DDR3L
|
2 Gbit
|
16 bit
|
933 MHz
|
FBGA-96
|
128 M x 16
|
|
1.283 V
|
1.575 V
|
- 40 C
|
+ 85 C
|
KTDM
|
Tray
|
|
|
|
DRAM DRAM DDR4 4GB 256MX16 2666Mbps 1.2V 96-FBGA Commercial
- KTDM4G4B626BGCEAT
- SMARTsemi
-
1:
28,60 €
-
3Prieinamumas
|
„Mouser“ Dalies Nr.
473-M4G4B626BGCEAT
|
SMARTsemi
|
DRAM DRAM DDR4 4GB 256MX16 2666Mbps 1.2V 96-FBGA Commercial
|
|
3Prieinamumas
|
|
Min.: 1
Daugkart.: 1
|
|
|
SDRAM - DDR4
|
4 Gbit
|
16 bit
|
1.333 GHz
|
FBGA-96
|
256 M x 16
|
|
1.14 V
|
1.26 V
|
0 C
|
+ 85 C
|
KTDM
|
Tray
|
|
|
|
DRAM DRAM DDR3(L) 2GB 125MX16 1866Mbps 1.35V/1.5V 96-FBGA Commercial
- KTDM2G3C618BGCEAT
- SMARTsemi
-
1:
8,75 €
-
120Prieinamumas
|
„Mouser“ Dalies Nr.
473-M2G3C618BGCEAT
|
SMARTsemi
|
DRAM DRAM DDR3(L) 2GB 125MX16 1866Mbps 1.35V/1.5V 96-FBGA Commercial
|
|
120Prieinamumas
|
|
Min.: 1
Daugkart.: 1
|
|
|
SDRAM - DDR3L
|
2 Gbit
|
16 bit
|
933 MHz
|
FBGA-96
|
128 M x 16
|
|
1.283 V
|
1.575 V
|
0 C
|
+ 85 C
|
KTDM
|
Tray
|
|
|
|
DRAM 512Mb LPDDR, x16, 200MHz, Industrial Temp, 46nm
- W949D6DBHX5I
- Winbond
-
1:
17,17 €
-
308Prieinamumas
-
NRND
|
„Mouser“ Dalies Nr.
454-W949D6DBHX5I
NRND
|
Winbond
|
DRAM 512Mb LPDDR, x16, 200MHz, Industrial Temp, 46nm
|
|
308Prieinamumas
|
|
Min.: 1
Daugkart.: 1
|
|
|
SDRAM Mobile - LPDDR
|
512 Mbit
|
16 bit
|
200 MHz
|
VFBGA-60
|
32 M x 16
|
6.5 ns
|
1.7 V
|
1.95 V
|
- 40 C
|
+ 85 C
|
W949D6DB
|
Tray
|
|
|
|
DRAM 1Gb LPDDR, x16, 200MHz, Ind temp
- W94AD6KBHX5I
- Winbond
-
1:
25,27 €
-
456Prieinamumas
-
NRND
|
„Mouser“ Dalies Nr.
454-W94AD6KBHX5I
NRND
|
Winbond
|
DRAM 1Gb LPDDR, x16, 200MHz, Ind temp
|
|
456Prieinamumas
|
|
Min.: 1
Daugkart.: 1
|
|
|
SDRAM Mobile - LPDDR
|
1 Gbit
|
16 bit
|
200 MHz
|
VFBGA-60
|
64 M x 16
|
6.5 ns
|
1.7 V
|
1.95 V
|
- 40 C
|
+ 85 C
|
W94AD6KB
|
Tray
|
|
|
|
DRAM 128M 8Mx16 1.8V LP Pseudo SRAM IT
- AS1C8M16PL-70BIN
- Alliance Memory
-
1:
9,72 €
-
490Prieinamumas
|
„Mouser“ Dalies Nr.
913-AS1C8M16PL-70BIN
|
Alliance Memory
|
DRAM 128M 8Mx16 1.8V LP Pseudo SRAM IT
|
|
490Prieinamumas
|
|
Min.: 1
Daugkart.: 1
|
|
|
PSRAM (Pseudo SRAM)
|
128 Mbit
|
16 bit
|
133 MHz
|
FBGA-49
|
8 M x 16
|
70 ns
|
1.7 V
|
1.95 V
|
- 30 C
|
+ 85 C
|
AS1C8M16PL-70
|
Tray
|
|
|
|
DRAM SPCM
Infineon Technologies S70KS1282GABHB020
- S70KS1282GABHB020
- Infineon Technologies
-
1:
8,50 €
-
621Prieinamumas
|
„Mouser“ Dalies Nr.
727-S70KS1282GABHB20
|
Infineon Technologies
|
DRAM SPCM
|
|
621Prieinamumas
|
|
Min.: 1
Daugkart.: 1
|
|
|
HyperRAM
|
128 Mbit
|
8 bit
|
200 MHz
|
|
16 M x 8
|
35 ns
|
1.7 V
|
2 V
|
- 40 C
|
+ 85 C
|
|
Tray
|
|
|
|
DRAM 256M, 3.3V, Mobile SDRAM, 8Mx32, 166Mhz, 90 ball BGA (8mmx13mm) RoHS, IT
- IS42SM32800K-6BLI
- ISSI
-
1:
9,11 €
-
238Prieinamumas
|
„Mouser“ Dalies Nr.
870-IS42SM32800K6BLI
|
ISSI
|
DRAM 256M, 3.3V, Mobile SDRAM, 8Mx32, 166Mhz, 90 ball BGA (8mmx13mm) RoHS, IT
|
|
238Prieinamumas
|
|
Min.: 1
Daugkart.: 1
|
|
|
SDRAM Mobile
|
256 Mbit
|
32 bit
|
166 MHz
|
BGA-90
|
8 M x 32
|
5.5 ns
|
2.7 V
|
3.6 V
|
- 40 C
|
+ 85 C
|
IS42SM32800K
|
Tray
|
|
|
|
DRAM 512Mb 32Mx16 3.3V 143MHz SDRAM I-Temp
- AS4C32M16SC-7TIN
- Alliance Memory
-
1:
41,31 €
-
464Prieinamumas
|
„Mouser“ Dalies Nr.
913-AS4C32M16SC-7TIN
|
Alliance Memory
|
DRAM 512Mb 32Mx16 3.3V 143MHz SDRAM I-Temp
|
|
464Prieinamumas
|
|
Min.: 1
Daugkart.: 1
|
|
|
SDRAM
|
512 Mbit
|
16 bit
|
133 MHz
|
TSOP-II-54
|
32 M x 16
|
17 ns
|
3 V
|
3.6 V
|
- 40 C
|
+ 85 C
|
AS4C32M16SC
|
Tray
|
|
|
|
DRAM 256M, 2.5V, 166Mhz 16Mx16 Mobile SDR
- IS42RM16160K-6BLI
- ISSI
-
1:
11,16 €
-
402Prieinamumas
-
348Tikėtina 2027-09-27
|
„Mouser“ Dalies Nr.
870-IS42RM16160K6BLI
|
ISSI
|
DRAM 256M, 2.5V, 166Mhz 16Mx16 Mobile SDR
|
|
402Prieinamumas
348Tikėtina 2027-09-27
|
|
Min.: 1
Daugkart.: 1
|
|
|
SDRAM Mobile
|
256 Mbit
|
16 bit
|
166 MHz
|
BGA-54
|
16 M x 16
|
6 ns
|
2.3 V
|
3 V
|
- 40 C
|
+ 85 C
|
IS42RM16160K
|
Tray
|
|
|
|
DRAM SDRAM, 256M, 32M X8, 3.3V, 54 PIN TSOP II, 166MHZ, INDUSTRIAL TEMP - Tray
- AS4C32M8SA-6TIN
- Alliance Memory
-
1:
15,79 €
-
157Prieinamumas
|
„Mouser“ Dalies Nr.
913-AS4C32M8SA6TIN
|
Alliance Memory
|
DRAM SDRAM, 256M, 32M X8, 3.3V, 54 PIN TSOP II, 166MHZ, INDUSTRIAL TEMP - Tray
|
|
157Prieinamumas
|
|
Min.: 1
Daugkart.: 1
|
|
|
SDRAM
|
256 Mbit
|
8 bit
|
166 MHz
|
TSOP-II-54
|
32 M x 8
|
5 ns
|
3 V
|
3.6 V
|
- 40 C
|
+ 85 C
|
AS4C32M8SA
|
Tray
|
|