|
|
Lygintuvai 15A 600V 18ns Hyperfast
- VS-15EWX06FN-M3
- Vishay Semiconductors
-
1:
2,25 €
-
Ne Sandėlyje Esantys
|
„Mouser“ Dalies Nr.
78-VS-15EWX06FN-M3
|
Vishay Semiconductors
|
Lygintuvai 15A 600V 18ns Hyperfast
|
|
Ne Sandėlyje Esantys
|
|
Min.: 1
Daugkart.: 1
|
|
|
|
|
Dvipoliai tranzistoriai – BJT 5A 25V 12.5W NPN
- MJD200T4G
- onsemi
-
1:
0,826 €
-
7 927Prieinamumas
|
„Mouser“ Dalies Nr.
863-MJD200T4G
|
onsemi
|
Dvipoliai tranzistoriai – BJT 5A 25V 12.5W NPN
|
|
7 927Prieinamumas
|
|
Min.: 1
Daugkart.: 1
:
2 500
|
|
|
|
|
Dvipoliai tranzistoriai – BJT 32V PNP Trans -40V 10W -32V VCEO -2A
- 2DB1182Q-13
- Diodes Incorporated
-
1:
0,679 €
-
12 856Prieinamumas
|
„Mouser“ Dalies Nr.
621-2DB1182Q-13
|
Diodes Incorporated
|
Dvipoliai tranzistoriai – BJT 32V PNP Trans -40V 10W -32V VCEO -2A
|
|
12 856Prieinamumas
|
|
Min.: 1
Daugkart.: 1
Maks.: 530
:
2 500
|
|
|
|
|
MOSFETs Transistor MOSFET, Nch 650V 7A 3rd Gen, Low Noise
- R6507END3TL1
- ROHM Semiconductor
-
1:
2,49 €
-
2 500Prieinamumas
|
„Mouser“ Dalies Nr.
755-R6507END3TL1
|
ROHM Semiconductor
|
MOSFETs Transistor MOSFET, Nch 650V 7A 3rd Gen, Low Noise
|
|
2 500Prieinamumas
|
|
Min.: 1
Daugkart.: 1
:
2 500
|
|
|
|
|
SCHOTTKY Diodes ir Lygintuvai RECT 30V 5A SM SKY BARRI
- RB078BGE30STL
- ROHM Semiconductor
-
1:
2,48 €
-
2 444Prieinamumas
|
„Mouser“ Dalies Nr.
755-RB078BGE30STL
|
ROHM Semiconductor
|
SCHOTTKY Diodes ir Lygintuvai RECT 30V 5A SM SKY BARRI
|
|
2 444Prieinamumas
|
|
Min.: 1
Daugkart.: 1
:
2 500
|
|
|
|
|
SCHOTTKY Diodes ir Lygintuvai RECT 60V 5A SM SKY BARRI
- RB085BGE-60TL
- ROHM Semiconductor
-
1:
2,24 €
-
2 288Prieinamumas
|
„Mouser“ Dalies Nr.
755-RB085BGE-60TL
|
ROHM Semiconductor
|
SCHOTTKY Diodes ir Lygintuvai RECT 60V 5A SM SKY BARRI
|
|
2 288Prieinamumas
|
|
Min.: 1
Daugkart.: 1
:
2 500
|
|
|
|
|
SCHOTTKY Diodes ir Lygintuvai RECT 30V 5A SM SKY BARRI
- RB088BGE-30TL
- ROHM Semiconductor
-
1:
2,23 €
-
2 181Prieinamumas
|
„Mouser“ Dalies Nr.
755-RB088BGE-30TL
|
ROHM Semiconductor
|
SCHOTTKY Diodes ir Lygintuvai RECT 30V 5A SM SKY BARRI
|
|
2 181Prieinamumas
|
|
Min.: 1
Daugkart.: 1
:
2 500
|
|
|
|
|
SCHOTTKY Diodes ir Lygintuvai Schottky Barrier Diode 65V, 10A, TO-252, Cathode Common, Low IR
- RBQ10BGE65ATL
- ROHM Semiconductor
-
1:
1,87 €
-
2 437Prieinamumas
|
„Mouser“ Dalies Nr.
755-RBQ10BGE65ATL
|
ROHM Semiconductor
|
SCHOTTKY Diodes ir Lygintuvai Schottky Barrier Diode 65V, 10A, TO-252, Cathode Common, Low IR
|
|
2 437Prieinamumas
|
|
Min.: 1
Daugkart.: 1
:
2 500
|
|
|
|
|
IGBT 5 s Short-Circuit Tolerance, 650V 8A, FRD Built-in, TO-252, Field Stop Trench IGBT
- RGT16BM65DTL
- ROHM Semiconductor
-
1:
2,66 €
-
5 312Prieinamumas
|
„Mouser“ Dalies Nr.
755-RGT16BM65DTL
|
ROHM Semiconductor
|
IGBT 5 s Short-Circuit Tolerance, 650V 8A, FRD Built-in, TO-252, Field Stop Trench IGBT
|
|
5 312Prieinamumas
|
|
Min.: 1
Daugkart.: 1
:
2 500
|
|
|
|
|
Lygintuvai Hyperfast 8A 200V 23ns
- VS-8EWH02FNTR-M3
- Vishay Semiconductors
-
1:
1,58 €
-
3 037Prieinamumas
|
„Mouser“ Dalies Nr.
78-VS-8EWH02FNTR-M3
|
Vishay Semiconductors
|
Lygintuvai Hyperfast 8A 200V 23ns
|
|
3 037Prieinamumas
|
|
Min.: 1
Daugkart.: 1
:
2 000
|
|
|
|
|
Dvipoliai tranzistoriai – BJT BIP PNP 2A 50V
- 2SB1201S-TL-E
- onsemi
-
1:
1,38 €
-
4 265Prieinamumas
|
„Mouser“ Dalies Nr.
863-2SB1201S-TL-E
|
onsemi
|
Dvipoliai tranzistoriai – BJT BIP PNP 2A 50V
|
|
4 265Prieinamumas
|
|
Min.: 1
Daugkart.: 1
Maks.: 700
:
700
|
|
|
|
|
Linijiniai įtampos reguliatoriai 100V Input 12V 60mA 3V 0.05A 45dB 0.24mA
- ZXTR2012K-13
- Diodes Incorporated
-
1:
0,439 €
-
12 898Prieinamumas
|
„Mouser“ Dalies Nr.
621-ZXTR2012K-13
|
Diodes Incorporated
|
Linijiniai įtampos reguliatoriai 100V Input 12V 60mA 3V 0.05A 45dB 0.24mA
|
|
12 898Prieinamumas
|
|
Min.: 1
Daugkart.: 1
Maks.: 360
:
2 500
|
|
|
|
|
Maitinimo Jungiklių Integriniai Grandynai - Maitinimo Paskirstymas HITFET SMART LOWSIDE PWR SW
- BTS3104SDRATMA1
- Infineon Technologies
-
1:
1,60 €
-
2 997Prieinamumas
|
„Mouser“ Dalies Nr.
726-BTS3104SDRATMA1
|
Infineon Technologies
|
Maitinimo Jungiklių Integriniai Grandynai - Maitinimo Paskirstymas HITFET SMART LOWSIDE PWR SW
|
|
2 997Prieinamumas
|
|
Min.: 1
Daugkart.: 1
:
2 500
|
|
|
|
|
Maitinimo Jungiklių Integriniai Grandynai - Maitinimo Paskirstymas SMART LW SIDE PWR 42V 4.6A
- BTS3142D
- Infineon Technologies
-
1:
2,25 €
-
3 208Prieinamumas
|
„Mouser“ Dalies Nr.
726-BTS3142D
|
Infineon Technologies
|
Maitinimo Jungiklių Integriniai Grandynai - Maitinimo Paskirstymas SMART LW SIDE PWR 42V 4.6A
|
|
3 208Prieinamumas
|
|
Min.: 1
Daugkart.: 1
:
2 500
|
|
|
|
|
LDO įtampos reguliatoriai LINEAR VOLTAGE REGULATOR
- TLE42744D V33
- Infineon Technologies
-
1:
1,27 €
-
6 433Prieinamumas
|
„Mouser“ Dalies Nr.
726-TLE42744DV33
|
Infineon Technologies
|
LDO įtampos reguliatoriai LINEAR VOLTAGE REGULATOR
|
|
6 433Prieinamumas
|
|
Min.: 1
Daugkart.: 1
:
2 500
|
|
|
|
|
MOSFETs Transistor MOSFET, Nch 600V 4A 1st Gen, for Auto
- R6004PND3FRATL
- ROHM Semiconductor
-
1:
3,53 €
-
1 845Prieinamumas
|
„Mouser“ Dalies Nr.
755-R6004PND3FRATL
|
ROHM Semiconductor
|
MOSFETs Transistor MOSFET, Nch 600V 4A 1st Gen, for Auto
|
|
1 845Prieinamumas
|
|
Min.: 1
Daugkart.: 1
:
2 500
|
|
|
|
|
MOSFETs Transistor MOSFET, Nch 650V 11A 3rd Gen, Fast Switch
- R6511KND3TL1
- ROHM Semiconductor
-
1:
2,78 €
-
1 699Prieinamumas
|
„Mouser“ Dalies Nr.
755-R6511KND3TL1
|
ROHM Semiconductor
|
MOSFETs Transistor MOSFET, Nch 650V 11A 3rd Gen, Fast Switch
|
|
1 699Prieinamumas
|
|
Min.: 1
Daugkart.: 1
:
2 500
|
|
|
|
|
SCHOTTKY Diodes ir Lygintuvai RECT 150V 3A SM SKY BARRI
- RB098BGE150TL
- ROHM Semiconductor
-
1:
2,46 €
-
2 475Prieinamumas
|
„Mouser“ Dalies Nr.
755-RB098BGE150TL
|
ROHM Semiconductor
|
SCHOTTKY Diodes ir Lygintuvai RECT 150V 3A SM SKY BARRI
|
|
2 475Prieinamumas
|
|
Min.: 1
Daugkart.: 1
:
2 500
|
|
|
|
|
MOSFETs Pch -45V -4.5A TO-252 (DPAK)
- RD3H045SPTL1
- ROHM Semiconductor
-
1:
1,48 €
-
4 405Prieinamumas
|
„Mouser“ Dalies Nr.
755-RD3H045SPTL1
|
ROHM Semiconductor
|
MOSFETs Pch -45V -4.5A TO-252 (DPAK)
|
|
4 405Prieinamumas
|
|
Min.: 1
Daugkart.: 1
:
2 500
|
|
|
|
|
MOSFETs TO252 250V 8A N-CH MOSFET
- RD3U080AAFRATL
- ROHM Semiconductor
-
1:
2,30 €
-
4 507Prieinamumas
|
„Mouser“ Dalies Nr.
755-RD3U080AAFRATL
|
ROHM Semiconductor
|
MOSFETs TO252 250V 8A N-CH MOSFET
|
|
4 507Prieinamumas
|
|
Min.: 1
Daugkart.: 1
:
2 500
|
|
|
|
|
IGBT 650V 4A IGBT Stop Trench
- RGT8BM65DTL
- ROHM Semiconductor
-
1:
2,77 €
-
2 141Prieinamumas
|
„Mouser“ Dalies Nr.
755-RGT8BM65DTL
|
ROHM Semiconductor
|
IGBT 650V 4A IGBT Stop Trench
|
|
2 141Prieinamumas
|
|
Min.: 1
Daugkart.: 1
:
2 500
|
|
|
|
|
Lygintuvai Hyperfast 6A 600V 14ns
- VS-6EWX06FNTR-M3
- Vishay Semiconductors
-
1:
1,69 €
-
4 885Prieinamumas
|
„Mouser“ Dalies Nr.
78-VS-6EWX06FNTR-M3
|
Vishay Semiconductors
|
Lygintuvai Hyperfast 6A 600V 14ns
|
|
4 885Prieinamumas
|
|
Min.: 1
Daugkart.: 1
:
2 000
|
|
|
|
|
Lygintuvai 8A 600V 18ns Hyperfast
- VS-8EWH06FN-M3
- Vishay Semiconductors
-
1:
1,94 €
-
5 840Prieinamumas
|
„Mouser“ Dalies Nr.
78-VS-8EWH06FN-M3
|
Vishay Semiconductors
|
Lygintuvai 8A 600V 18ns Hyperfast
|
|
5 840Prieinamumas
|
|
Min.: 1
Daugkart.: 1
|
|
|
|
|
LDO įtampos reguliatoriai 2.5V 1.5A Very Low
- LD29150DT25R
- STMicroelectronics
-
1:
1,23 €
-
3 611Prieinamumas
|
„Mouser“ Dalies Nr.
511-LD29150DT25R
|
STMicroelectronics
|
LDO įtampos reguliatoriai 2.5V 1.5A Very Low
|
|
3 611Prieinamumas
|
|
Min.: 1
Daugkart.: 1
:
2 500
|
|
|
|
|
LDO įtampos reguliatoriai Bicmos Vltg Regulatr Ultra Lo Drop
- LD39150DT25-R
- STMicroelectronics
-
1:
1,24 €
-
11 064Prieinamumas
|
„Mouser“ Dalies Nr.
511-LD39150DT25-R
|
STMicroelectronics
|
LDO įtampos reguliatoriai Bicmos Vltg Regulatr Ultra Lo Drop
|
|
11 064Prieinamumas
|
|
Min.: 1
Daugkart.: 1
:
2 500
|
|
|