|
|
SCR Power Thyristor Discretes-SCR TO-247AD
- CMA160E1600HF
- Littelfuse
-
1:
16,05 €
-
2 778Prieinamumas
-
Naujas Produktas
|
„Mouser“ Dalies Nr.
576-CMA160E1600HF
Naujas Produktas
|
Littelfuse
|
SCR Power Thyristor Discretes-SCR TO-247AD
|
|
2 778Prieinamumas
|
|
|
16,05 €
|
|
|
11,12 €
|
|
|
10,18 €
|
|
|
9,07 €
|
|
|
8,48 €
|
|
Min.: 1
Daugkart.: 1
|
|
|
|
|
SiC MOSFET 1700V Through-Hole MOSFET N-Channel SiC
- CDMS24740-170 SL PBFREE
- Central Semiconductor
-
1:
34,01 €
-
27Prieinamumas
-
Naujas Produktas
|
„Mouser“ Dalies Nr.
610-CDMS24740-170SL
Naujas Produktas
|
Central Semiconductor
|
SiC MOSFET 1700V Through-Hole MOSFET N-Channel SiC
|
|
27Prieinamumas
|
|
Min.: 1
Daugkart.: 1
|
|
|
|
|
SiC SCHOTTKY diodai SCHOTTKY BARRIER DIODE TO-247 V=650 IF=16A
- TRS16N65FB,S1Q
- Toshiba
-
1:
5,66 €
-
29Prieinamumas
|
„Mouser“ Dalies Nr.
757-TRS16N65FBS1Q
|
Toshiba
|
SiC SCHOTTKY diodai SCHOTTKY BARRIER DIODE TO-247 V=650 IF=16A
|
|
29Prieinamumas
|
|
|
5,66 €
|
|
|
3,16 €
|
|
|
2,67 €
|
|
Min.: 1
Daugkart.: 1
|
|
|
|
|
MOSFETs 600V Vds 30V Vgs TO-247AC
- SIHG35N60E-GE3
- Vishay / Siliconix
-
1:
6,97 €
-
101Prieinamumas
|
„Mouser“ Dalies Nr.
78-SIHG35N60E-GE3
|
Vishay / Siliconix
|
MOSFETs 600V Vds 30V Vgs TO-247AC
|
|
101Prieinamumas
|
|
|
6,97 €
|
|
|
4,66 €
|
|
|
3,75 €
|
|
|
3,12 €
|
|
Min.: 1
Daugkart.: 1
|
|
|
|
|
MOSFETs 650V N-Channel SuperFET II MOSFET
- FCH077N65F-F085
- onsemi
-
1:
8,08 €
-
888Prieinamumas
-
NRND
|
„Mouser“ Dalies Nr.
512-FCH077N65F_F085
NRND
|
onsemi
|
MOSFETs 650V N-Channel SuperFET II MOSFET
|
|
888Prieinamumas
|
|
Min.: 1
Daugkart.: 1
|
|
|
|
|
SiC MOSFET SIC_DISCRETE
- AIMW120R045M1XKSA1
- Infineon Technologies
-
1:
17,40 €
-
736Prieinamumas
-
NRND
|
„Mouser“ Dalies Nr.
726-AIMW120R045M1XKS
NRND
|
Infineon Technologies
|
SiC MOSFET SIC_DISCRETE
|
|
736Prieinamumas
|
|
|
17,40 €
|
|
|
13,30 €
|
|
|
12,60 €
|
|
Min.: 1
Daugkart.: 1
|
|
|
|
|
SiC MOSFET SILICON CARBIDE MOSFET
- IMW65R048M1HXKSA1
- Infineon Technologies
-
1:
9,25 €
-
432Prieinamumas
-
NRND
|
„Mouser“ Dalies Nr.
726-IMW65R048M1HXKSA
NRND
|
Infineon Technologies
|
SiC MOSFET SILICON CARBIDE MOSFET
|
|
432Prieinamumas
|
|
|
9,25 €
|
|
|
5,48 €
|
|
|
4,62 €
|
|
|
4,15 €
|
|
Min.: 1
Daugkart.: 1
|
|
|
|
|
SiC SCHOTTKY diodai 1200V/20ASICDIODEDUAL
- UJ3D1220KSD
- onsemi
-
1:
13,41 €
-
343Prieinamumas
-
NRND
|
„Mouser“ Dalies Nr.
431-UJ3D1220KSD
NRND
|
onsemi
|
SiC SCHOTTKY diodai 1200V/20ASICDIODEDUAL
|
|
343Prieinamumas
|
|
|
13,41 €
|
|
|
8,28 €
|
|
|
6,73 €
|
|
Min.: 1
Daugkart.: 1
|
|
|
|
|
SiC SCHOTTKY diodai 1200V/50ASICDIODEG3TO
- UJ3D1250K
- onsemi
-
1:
27,11 €
-
538Prieinamumas
-
NRND
|
„Mouser“ Dalies Nr.
431-UJ3D1250K
NRND
|
onsemi
|
SiC SCHOTTKY diodai 1200V/50ASICDIODEG3TO
|
|
538Prieinamumas
|
|
|
27,11 €
|
|
|
17,70 €
|
|
|
16,41 €
|
|
Min.: 1
Daugkart.: 1
|
|
|
|
|
IGBT 1200 V, 120 A IGBT7 S7 in TO247PLUS-3pin package
- IGQ120N120S7XKSA1
- Infineon Technologies
-
1:
8,86 €
-
305Prieinamumas
-
NRND
|
„Mouser“ Dalies Nr.
726-GQ120N120S7XKSA1
NRND
|
Infineon Technologies
|
IGBT 1200 V, 120 A IGBT7 S7 in TO247PLUS-3pin package
|
|
305Prieinamumas
|
|
|
8,86 €
|
|
|
6,15 €
|
|
|
5,24 €
|
|
|
4,77 €
|
|
Min.: 1
Daugkart.: 1
|
|
|
|
|
MOSFETs MOSFET MOS 8 800 V 24 A TO-247
- APT24M80B
- Microchip Technology
-
1:
8,33 €
-
50Prieinamumas
|
„Mouser“ Dalies Nr.
494-APT24M80B
|
Microchip Technology
|
MOSFETs MOSFET MOS 8 800 V 24 A TO-247
|
|
50Prieinamumas
|
|
Min.: 1
Daugkart.: 1
|
|
|
|
|
MOSFETs 600V 14A
- IXFH14N60P
- IXYS
-
1:
7,04 €
-
130Prieinamumas
|
„Mouser“ Dalies Nr.
747-IXFH14N60P
|
IXYS
|
MOSFETs 600V 14A
|
|
130Prieinamumas
|
|
|
7,04 €
|
|
|
4,79 €
|
|
|
3,93 €
|
|
|
3,35 €
|
|
Min.: 1
Daugkart.: 1
|
|
|
|
|
MOSFETs 3 Amps 1200V 4.500 Rds
- IXTH3N120
- IXYS
-
1:
10,07 €
-
211Prieinamumas
-
90Tikėtina 2026-12-15
|
„Mouser“ Dalies Nr.
747-IXTH3N120
|
IXYS
|
MOSFETs 3 Amps 1200V 4.500 Rds
|
|
211Prieinamumas
90Tikėtina 2026-12-15
|
|
|
10,07 €
|
|
|
7,28 €
|
|
|
5,37 €
|
|
|
5,34 €
|
|
Min.: 1
Daugkart.: 1
|
|
|
|
|
IGBT 650 V, 50 A IGBT Discrete with Silicon Carbide Schottky diode
- IKW50N65SS5XKSA1
- Infineon Technologies
-
1:
8,75 €
-
550Prieinamumas
-
NRND
|
„Mouser“ Dalies Nr.
726-IKW50N65SS5XKSA1
NRND
|
Infineon Technologies
|
IGBT 650 V, 50 A IGBT Discrete with Silicon Carbide Schottky diode
|
|
550Prieinamumas
|
|
|
8,75 €
|
|
|
5,02 €
|
|
|
4,34 €
|
|
|
4,02 €
|
|
|
3,90 €
|
|
Min.: 1
Daugkart.: 1
|
|
|
|
|
SiC MOSFET SIC MOS 80MW 1200 V 80 mOhms 44A
- NVHL080N120SC1
- onsemi
-
1:
14,50 €
-
1 182Prieinamumas
-
NRND
|
„Mouser“ Dalies Nr.
863-NVHL080N120SC1
NRND
|
onsemi
|
SiC MOSFET SIC MOS 80MW 1200 V 80 mOhms 44A
|
|
1 182Prieinamumas
|
|
|
14,50 €
|
|
|
9,26 €
|
|
|
9,04 €
|
|
Min.: 1
Daugkart.: 1
|
|
|
|
|
IGBT 650 V, 50 A IGBT Discrete with Silicon Carbide Schottky diode
- IKW50N65RH5XKSA1
- Infineon Technologies
-
1:
6,41 €
-
615Prieinamumas
-
NRND
|
„Mouser“ Dalies Nr.
726-IKW50N65RH5XKSA1
NRND
|
Infineon Technologies
|
IGBT 650 V, 50 A IGBT Discrete with Silicon Carbide Schottky diode
|
|
615Prieinamumas
|
|
|
6,41 €
|
|
|
3,69 €
|
|
|
3,00 €
|
|
|
2,69 €
|
|
|
2,59 €
|
|
Min.: 1
Daugkart.: 1
|
|
|
|
|
MOSFETs 650V Vds 30V Vgs TO-247AC
- SIHG44N65EF-GE3
- Vishay / Siliconix
-
1:
9,88 €
-
475Prieinamumas
|
„Mouser“ Dalies Nr.
78-SIHG44N65EF-GE3
|
Vishay / Siliconix
|
MOSFETs 650V Vds 30V Vgs TO-247AC
|
|
475Prieinamumas
|
|
|
9,88 €
|
|
|
6,68 €
|
|
|
5,68 €
|
|
|
5,24 €
|
|
Min.: 1
Daugkart.: 1
|
|
|
|
|
MOSFETs FREDFET MOS 8 600 V 34 A TO-247
- APT34F60B
- Microchip Technology
-
1:
10,45 €
-
9Prieinamumas
|
„Mouser“ Dalies Nr.
494-APT34F60B
|
Microchip Technology
|
MOSFETs FREDFET MOS 8 600 V 34 A TO-247
|
|
9Prieinamumas
|
|
Min.: 1
Daugkart.: 1
|
|
|
|
|
MOSFETs MOSFET Superjunction 600 V 38 A TO-247
- APT38N60BC6
- Microchip Technology
-
1:
5,57 €
-
60Prieinamumas
|
„Mouser“ Dalies Nr.
494-APT38N60BC6
|
Microchip Technology
|
MOSFETs MOSFET Superjunction 600 V 38 A TO-247
|
|
60Prieinamumas
|
|
Min.: 1
Daugkart.: 1
|
|
|
|
|
MOSFETs MOSFET MOS5 800 V 75 Ohm TO-247
- APT8075BVRG
- Microchip Technology
-
1:
13,36 €
-
27Prieinamumas
|
„Mouser“ Dalies Nr.
494-APT8075BVRG
|
Microchip Technology
|
MOSFETs MOSFET MOS5 800 V 75 Ohm TO-247
|
|
27Prieinamumas
|
|
Min.: 1
Daugkart.: 1
|
|
|
|
|
MOSFETs 360Amps 55V
- IXTH360N055T2
- IXYS
-
1:
13,06 €
-
165Prieinamumas
|
„Mouser“ Dalies Nr.
747-IXTH360N055T2
|
IXYS
|
MOSFETs 360Amps 55V
|
|
165Prieinamumas
|
|
|
13,06 €
|
|
|
9,95 €
|
|
|
8,29 €
|
|
|
7,29 €
|
|
Min.: 1
Daugkart.: 1
|
|
|
|
|
MOSFETs Power MOSFET N-Channel
- TK17N65W,S1F
- Toshiba
-
1:
5,04 €
-
34Prieinamumas
|
„Mouser“ Dalies Nr.
757-TK17N65WS1F
|
Toshiba
|
MOSFETs Power MOSFET N-Channel
|
|
34Prieinamumas
|
|
|
5,04 €
|
|
|
2,80 €
|
|
|
2,33 €
|
|
Min.: 1
Daugkart.: 1
|
|
|
|
|
Lygintuvai Dual ultrafast power diode
- BYV415W-600PQ
- WeEn Semiconductors
-
1:
3,06 €
-
372Prieinamumas
|
„Mouser“ Dalies Nr.
771-BYV415W-600PQ
|
WeEn Semiconductors
|
Lygintuvai Dual ultrafast power diode
|
|
372Prieinamumas
|
|
|
3,06 €
|
|
|
2,00 €
|
|
|
1,40 €
|
|
|
1,10 €
|
|
|
Peržiūrėti
|
|
|
1,07 €
|
|
|
1,02 €
|
|
Min.: 1
Daugkart.: 1
|
|
|
|
|
SCR Planar Passivated SCR
- TYN50W-1600TQ
- WeEn Semiconductors
-
1:
5,30 €
-
40Prieinamumas
-
1 440Tikėtina 2027-02-04
|
„Mouser“ Dalies Nr.
771-TYN50W-1600TQ
|
WeEn Semiconductors
|
SCR Planar Passivated SCR
|
|
40Prieinamumas
1 440Tikėtina 2027-02-04
|
|
|
5,30 €
|
|
|
3,47 €
|
|
|
2,55 €
|
|
|
2,17 €
|
|
Min.: 1
Daugkart.: 1
|
|
|
|
|
MOSFETs 600V Vds 30V Vgs TO-247AD
- SIHW33N60E-GE3
- Vishay Semiconductors
-
1:
7,43 €
-
158Prieinamumas
|
„Mouser“ Dalies Nr.
78-SIHW33N60E-GE3
|
Vishay Semiconductors
|
MOSFETs 600V Vds 30V Vgs TO-247AD
|
|
158Prieinamumas
|
|
|
7,43 €
|
|
|
5,23 €
|
|
|
4,23 €
|
|
|
3,38 €
|
|
Min.: 1
Daugkart.: 1
|
|
|
Lietuva
