800V CoolMOS™ P7 MOSFETs

Infineon 800V CoolMOS™ P7 MOSFETs combine best-in-class performance with ease-of-use. The P7 set a new benchmark in 800V super junction technologies. The transistors offer up to 0.6 percent efficiency gain and 2°C to 8°C lower MOSFET temperature. The transistors feature optimized device parameters like over 50% reduction in Eoss and Qg, reduced Ciss and Coss. The CoolMOS P7 also enable higher power density designs through lower switching losses and better DPAK RDS(on) products. The CoolMOS P7 are a perfect fit for low-power SMPS applications.

Rezultatai: 32
Pasirinkite Vaizdas Dalies Nr. Gam. Aprašymas Duomenų Lapas Prieinamumas Kainodara (EUR) Filtruokite lentelėje pateiktus rezultatus pagal vieneto kainą, remdamiesi kiekiu. Qty. RoHS ECAD modelis Technologijos Montavimo stilius Pakuotė / Korpusas Tranzistoriaus poliškumas Kanalų skaičius Vds - nutekėjimo-šaltinio pramušimo įtampa svar. – nuolatinio išleidimo srovė RDS On - Drain-Source Varža Vgs - užtūros-šaltinio įtampa Vgs th - užtūros-šaltinio slenkstinė įtampa Qg – vartų krūvis Minimali darbinė temperatūra Didžiausia darbinė temperatūra Pd - skaidos galia Kanalas Mode Prekinis pavadinimas Pakavimas
Infineon Technologies MOSFETs LOW POWER_NEW 1 580Prieinamumas
Min.: 1
Daugkart.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 800 V 11 A 450 mOhms - 30 V, 30 V 3 V 24 nC - 55 C + 150 C 29 W Enhancement CoolMOS Tube
Infineon Technologies MOSFETs LOW POWER_NEW 4 463Prieinamumas
Min.: 1
Daugkart.: 1
: 2 500

Si SMD/SMT DPAK-3 (TO-252-3) N-Channel 1 Channel 800 V 7 A 640 mOhms - 20 V, 20 V 2.5 V 17 nC - 55 C + 150 C 51 W Enhancement CoolMOS Reel, Cut Tape
Infineon Technologies MOSFETs LOW POWER_NEW 8 670Prieinamumas
Min.: 1
Daugkart.: 1
: 2 500

Si SMD/SMT DPAK-3 (TO-252-3) N-Channel 1 Channel 800 V 4.5 A 1 Ohms - 20 V, 20 V 2.5 V 11 nC - 55 C + 150 C 37 W Enhancement CoolMOS Reel, Cut Tape
Infineon Technologies MOSFETs LOW POWER_NEW 1 441Prieinamumas
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Daugkart.: 1

Si Through Hole TO-251-3 N-Channel 1 Channel 800 V 6 A 900 mOhms - 20 V, 20 V 2.5 V 15 nC - 55 C + 150 C 45 W Enhancement CoolMOS Tube
Infineon Technologies MOSFETs LOW POWER_NEW 4 908Prieinamumas
Min.: 1
Daugkart.: 1
: 2 500

Si SMD/SMT DPAK-3 (TO-252-3) N-Channel 1 Channel 800 V 13 A 310 mOhms - 20 V, 20 V 2.5 V 30 nC - 55 C + 150 C 84 W Enhancement CoolMOS Reel, Cut Tape, MouseReel
Infineon Technologies MOSFETs LOW POWER_NEW 9 161Prieinamumas
Min.: 1
Daugkart.: 1
: 2 500

Si SMD/SMT DPAK-3 (TO-252-3) N-Channel 1 Channel 800 V 17 A 280 mOhms - 30 V, 30 V 3 V 36 nC - 50 C + 150 C 101 W Enhancement CoolMOS Reel, Cut Tape, MouseReel
Infineon Technologies MOSFETs LOW POWER_NEW 9 148Prieinamumas
Min.: 1
Daugkart.: 1
: 2 500

Si SMD/SMT DPAK-3 (TO-252-3) N-Channel 1 Channel 800 V 2.5 A 2 Ohms - 20 V, 20 V 2.5 V 7.5 nC - 55 C + 150 C 22 W Enhancement CoolMOS Reel, Cut Tape
Infineon Technologies MOSFETs LOW POWER_NEW 8 390Prieinamumas
Min.: 1
Daugkart.: 1
: 2 500

Si SMD/SMT DPAK-3 (TO-252-3) N-Channel 1 Channel 800 V 11 A 450 mOhms - 30 V, 30 V 3 V 24 nC - 50 C + 150 C 73 W Enhancement CoolMOS Reel, Cut Tape, MouseReel
Infineon Technologies MOSFETs LOW POWER_NEW 7 500Prieinamumas
Min.: 1
Daugkart.: 1
: 2 500

Si SMD/SMT DPAK-3 (TO-252-3) N-Channel 1 Channel 800 V 6 A 770 mOhms - 20 V, 20 V 2.5 V 15 nC - 55 C + 150 C 45 W Enhancement CoolMOS Reel, Cut Tape
Infineon Technologies MOSFETs LOW POWER_NEW 9 843Prieinamumas
Min.: 1
Daugkart.: 1
: 3 000

Si SMD/SMT SOT-223-3 N-Channel 1 Channel 800 V 2.5 A 2 Ohms - 30 V, 30 V 3.5 V 7.5 nC - 55 C + 150 C 500 mW Enhancement CoolMOS Reel, Cut Tape
Infineon Technologies MOSFETs LOW POWER_NEW 3 507Prieinamumas
Min.: 1
Daugkart.: 1
: 2 500

Si SMD/SMT DPAK-3 (TO-252-3) N-Channel 1 Channel 800 V 3 A 1.7 Ohms - 20 V, 20 V 2.5 V 9 nC - 55 C + 150 C 24 W Enhancement CoolMOS Reel, Cut Tape
Infineon Technologies MOSFETs LOW POWER_NEW 702Prieinamumas
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Si Through Hole TO-220-3 N-Channel 1 Channel 800 V 4 A 1.4 Ohms - 30 V, 30 V 3 V 10 nC - 55 C + 150 C 24 W Enhancement CoolMOS Tube
Infineon Technologies MOSFETs LOW POWER_NEW 776Prieinamumas
Min.: 1
Daugkart.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 800 V 17 A 280 mOhms - 30 V, 30 V 3 V 36 nC - 55 C + 150 C 30 W Enhancement CoolMOS Tube
Infineon Technologies MOSFETs LOW POWER_NEW 803Prieinamumas
Min.: 1
Daugkart.: 1

Si Through Hole TO-220FP-3 N-Channel 1 Channel 800 V 13 A 310 mOhms - 20 V, 20 V 2.5 V 30 nC - 55 C + 150 C 30 W Enhancement CoolMOS Tube
Infineon Technologies MOSFETs LOW POWER_NEW 873Prieinamumas
Min.: 1
Daugkart.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 800 V 8 A 510 mOhms - 20 V, 20 V 2.5 V 20 nC - 55 C + 150 C 28 W Enhancement CoolMOS Tube
Infineon Technologies MOSFETs LOW POWER_NEW 766Prieinamumas
500Tikėtina 2026-07-27
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Daugkart.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 800 V 6 A 770 mOhms - 20 V, 20 V 2.5 V 15 nC - 55 C + 150 C 26 W Enhancement CoolMOS Tube
Infineon Technologies MOSFETs LOW POWER_NEW 30Prieinamumas
2 500Tikėtina 2026-12-03
Min.: 1
Daugkart.: 1
: 2 500

Si SMD/SMT DPAK-3 (TO-252-3) N-Channel 1 Channel 800 V 4 A 1.4 Ohms - 30 V, 30 V 3 V 10 nC - 55 C + 150 C 32 W Enhancement CoolMOS Reel, Cut Tape
Infineon Technologies MOSFETs 800V CoolMOS P7PowerDevice 2 997Prieinamumas
Min.: 1
Daugkart.: 1
: 2 500

Si SMD/SMT DPAK-3 (TO-252-3) N-Channel 1 Channel 800 V 1.9 A 2.8 Ohms - 20 V, 20 V 2.5 V 5.8 nC - 55 C + 150 C 18 W Enhancement CoolMOS Reel, Cut Tape, MouseReel
Infineon Technologies MOSFETs LOW POWER_NEW 815Prieinamumas
2 500Tikėtina 2026-10-15
Min.: 1
Daugkart.: 1
: 2 500
Si SMD/SMT DPAK-3 (TO-252-3) N-Channel 1 Channel 800 V 1.5 A 4.5 Ohms - 30 V, 30 V 3 V 4 nC - 50 C + 150 C 13 W Enhancement CoolMOS Reel, Cut Tape, MouseReel
Infineon Technologies MOSFETs LOW POWER_NEW 719Prieinamumas
5 000Tikėtina 2026-12-11
Min.: 1
Daugkart.: 1
: 2 500

Si SMD/SMT DPAK-3 (TO-252-3) N-Channel 1 Channel 800 V 8 A 510 mOhms - 20 V, 20 V 2.5 V 20 nC - 55 C + 150 C 60 W Enhancement CoolMOS Reel, Cut Tape, MouseReel
Infineon Technologies MOSFETs LOW POWER_NEW 4 961Prieinamumas
12 000Pagal užsakymą
Min.: 1
Daugkart.: 1
: 3 000

Si SMD/SMT SOT-223-3 N-Channel 1 Channel 800 V 1.5 A 3.8 Ohms - 20 V, 20 V 2.5 V 4 nC - 55 C + 150 C 6 W Enhancement CoolMOS Reel, Cut Tape, MouseReel

Infineon Technologies MOSFETs LOW POWER_NEW 113Prieinamumas
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Daugkart.: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 800 V 17 A 280 mOhms - 30 V, 30 V 3 V 36 nC - 50 C + 150 C 101 W Enhancement CoolMOS Tube
Infineon Technologies MOSFETs LOW POWER_NEW
8 876Tikėtina 2026-08-27
Min.: 1
Daugkart.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 800 V 7 A 640 mOhms - 20 V, 20 V 2.5 V 17 nC - 55 C + 150 C 27 W Enhancement CoolMOS Tube
Infineon Technologies MOSFETs LOW POWER_NEW
16 975Tikėtina 2026-11-05
Min.: 1
Daugkart.: 1
: 3 000

Si SMD/SMT SOT-223-3 N-Channel 1 Channel 800 V 4 A 1.2 Ohms - 20 V, 20 V 2.5 V 10 nC - 55 C + 150 C 7 W Enhancement CoolMOS Reel, Cut Tape, MouseReel
Infineon Technologies MOSFETs LOW POWER_NEW
2 992Tikėtina 2026-12-04
Min.: 1
Daugkart.: 1
: 3 000

Si SMD/SMT SOT-223-3 N-Channel 1 Channel 800 V 8 A 510 mOhms - 30 V, 30 V 3 V 20 nC - 55 C + 150 C 7.4 W Enhancement Reel, Cut Tape, MouseReel