1200V TRENCHSTOP IGBT7 H7 Discrete Transistors

Infineon Technologies 1200V TRENCHSTOP IGBT7 H7 Discrete Transistors are the 7th generation of 1200V TRENCHSTOP™ IGBTs, which are designed with micro-pattern trench technology. These discrete IGBTs offer a high level of controllability, low conduction losses, low switching losses, improved EMI performance, and humidity robustness under harsh environments. The IGBT7 H7 discrete transistors allow the selection of a low gate resistor (down to 5Ω) while maintaining excellent switching behavior. These transistors are used in fast EV charging, industrial heating and welding, and Uninterruptible Power Supplies (UPS) applications.

Rezultatai: 16
Pasirinkite Vaizdas Dalies Nr.
 Gam.
Aprašymas Duomenų Lapas Prieinamumas Kainodara (EUR) Filtruokite lentelėje pateiktus rezultatus pagal vieneto kainą, remdamiesi kiekiu.
Qty. RoHS ECAD modelis Technologijos
Didžiausia vartų emiterio įtampa
Serija
Pakavimas
Infineon Technologies IGBT 1200 V, 50 A IGBT with anti-parallel diode in TO-247PLUS 4pin package
Duomenų Lapas
417Prieinamumas
Min.: 1
Daugkart.: 1

- 20 V, 20 V IGBT7 H7 Tube
Infineon Technologies IGBT 1200 V, 75 A IGBT with anti-parallel diode in TO-247PLUS-3pin package
Duomenų Lapas
283Prieinamumas
Min.: 1
Daugkart.: 1

- 20 V, 20 V IGBT7 H7 Tube
Infineon Technologies IGBT 1200 V, 75 A IGBT with anti-parallel diode in TO247PLUS 4pin package
Duomenų Lapas
198Prieinamumas
Min.: 1
Daugkart.: 1

- 20 V, 20 V IGBT7 H7 Tube
Infineon Technologies IGBT 1200 V, 75 A IGBT with anti-parallel diode in TO-247 3pin package
Duomenų Lapas
410Prieinamumas
480Tikėtina 2026-10-29
Min.: 1
Daugkart.: 1

IGBT7 H7 Tube
Infineon Technologies IGBT 1200 V, 140 A IGBT with anti-parallel diode in TO-247PLUS 4pin package
Duomenų Lapas
487Prieinamumas
480Tikėtina 2026-11-05
Min.: 1
Daugkart.: 1

- 20 V, 20 V IGBT7 H7 Tube
Infineon Technologies IGBT 1200 V, 40 A IGBT with anti-parallel diode in TO-247 3pin package
Duomenų Lapas
320Prieinamumas
Min.: 1
Daugkart.: 1

- 20 V, 20 V IGBT7 H7 Tube
Infineon Technologies IGBT 1200 V, 50 A IGBT with anti-parallel diode in TO-247 3pin package
Duomenų Lapas
237Prieinamumas
Min.: 1
Daugkart.: 1

- 20 V, 20 V IGBT7 H7 Tube
Infineon Technologies IGBT 1200 V, 120 A IGBT with anti-parallel diode in TO-247PLUS-3pin package
Duomenų Lapas
82Prieinamumas
Min.: 1
Daugkart.: 1

- 20 V, 20 V IGBT7 H7 Tube
Infineon Technologies IGBT 1200 V, 100 A IGBT with anti-parallel diode in TO-247PLUS 4pin package
Duomenų Lapas
200Prieinamumas
480Tikėtina 2026-07-27
Min.: 1
Daugkart.: 1

- 20 V, 20 V IGBT7 H7 Tube
Infineon Technologies IGBT 1200 V, 120 A IGBT with anti-parallel diode in TO-247PLUS 4pin package
Duomenų Lapas
149Prieinamumas
240Tikėtina 2026-11-26
Min.: 1
Daugkart.: 1

Si IGBT7 H7 Tube
Infineon Technologies IGBT 1200 V, 40 A IGBT with anti-parallel diode in TO-247 4pin package
Duomenų Lapas
187Prieinamumas
Min.: 1
Daugkart.: 1

- 20 V, 20 V IGBT7 H7 Tube
Infineon Technologies IGBT 1200 V, 140 A IGBT with anti-parallel diode in TO-247PLUS-3pin package
Duomenų Lapas
240Prieinamumas
2 400Pagal užsakymą
Min.: 1
Daugkart.: 1

- 20 V, 20 V IGBT7 H7 Tube
Infineon Technologies IGBT 1200 V, 50 A IGBT with anti-parallel diode in TO-247PLUS 3pin package
Duomenų Lapas
27Prieinamumas
240Tikėtina 2026-10-01
Min.: 1
Daugkart.: 1

- 20 V, 20 V IGBT7 H7 Tube
Infineon Technologies IGBT 1200 V, 50 A IGBT with anti-parallel diode in TO-247 4pin package
Duomenų Lapas
6Prieinamumas
Min.: 1
Daugkart.: 1

- 20 V, 20 V IGBT7 H7 Tube
Infineon Technologies IGBT 1200 V, 75 A IGBT with anti-parallel diode in TO-247 4pin package
Duomenų Lapas
46Prieinamumas
240Tikėtina 2027-04-22
Min.: 1
Daugkart.: 1

IGBT7 H7 Tube
Infineon Technologies IGBT 1200 V, 100 A IGBT with anti-parallel diode in TO-247PLUS-3pin package
Duomenų Lapas
460Tikėtina 2027-04-22
Min.: 1
Daugkart.: 1

- 20 V, 20 V IGBT7 H7 Tube