Electronic Vehicle (EV) Solutions

ROHM Semiconductor Electronic Vehicle (EV) Solutions are designed to improve efficiency and performance in state-of-the-art EVs. ROHM offers products optimized for various solutions, with a focus on dedicated EV blocks, such as the main inverter, DC-DC converter, onboard charger, and electric compressor.

Visi rezultatai (1 459)

Pasirinkite Vaizdas Dalies Nr. Gam. Aprašymas Duomenų Lapas Prieinamumas Kainodara (EUR) Filtruokite lentelėje pateiktus rezultatus pagal vieneto kainą, remdamiesi kiekiu. Qty. RoHS
ROHM Semiconductor MOSFETs Nch 60V 12A, DFN2020Y7LSAA, Power MOSFET for Automotive 3 465Prieinamumas
Min.: 1
Daugkart.: 1
: 3 000

ROHM Semiconductor MOSFETs TO263 100V 80A N-CH MOSFET 1 546Prieinamumas
Min.: 1
Daugkart.: 1
: 800

ROHM Semiconductor MOSFETs TO263 100V 120A N-CH MOSFET 950Prieinamumas
Min.: 1
Daugkart.: 1
: 800

ROHM Semiconductor MOSFETs TO263 100V 170A N-CH MOSFET 1 567Prieinamumas
Min.: 1
Daugkart.: 1
: 800

ROHM Semiconductor MOSFETs Pch -40V -27A, HSMT8AG, Power MOSFET for Automotive 3 674Prieinamumas
Min.: 1
Daugkart.: 1
: 3 000

ROHM Semiconductor MOSFETs Automotive Nch 40V 27A Power MOSFET for ADAS/Info./Lighting/Body. 3 500Prieinamumas
Min.: 1
Daugkart.: 1
: 3 000

ROHM Semiconductor MOSFETs HSMT8 N-CH 60V 20A 4 218Prieinamumas
Min.: 1
Daugkart.: 1
: 3 000

ROHM Semiconductor MOSFETs Nch 60V 27A, HSMT8AG, Power MOSFET for Automotive 3 461Prieinamumas
Min.: 1
Daugkart.: 1
: 3 000

ROHM Semiconductor MOSFETs Nch 60V 27A, HSMT8AG, Power MOSFET for Automotive 3 500Prieinamumas
Min.: 1
Daugkart.: 1
: 3 000

ROHM Semiconductor MOSFETs Nch 100V 27A, HSMT8AG, Power MOSFET for Automotive 3 477Prieinamumas
Min.: 1
Daugkart.: 1
: 3 000

ROHM Semiconductor MOSFETs HSOP8 N-CH 40V 120A 2 500Prieinamumas
Min.: 1
Daugkart.: 1
: 2 500

ROHM Semiconductor MOSFETs HSOP8 N-CH 60V 90A 2 516Prieinamumas
Min.: 1
Daugkart.: 1
: 2 500

ROHM Semiconductor MOSFETs HSOP8 N-CH 60V 150A 2 440Prieinamumas
Min.: 1
Daugkart.: 1
: 2 500

ROHM Semiconductor MOSFETs 100V 8A Dual Nch+Nch, SOP8, Power MOSFET 4 591Prieinamumas
Min.: 1
Daugkart.: 1
: 2 500

ROHM Semiconductor SCHOTTKY Diodes ir Lygintuvai Trench MOS Structure, 100V, 10A, TO-277A, Highly Efficient SBD for Automotive: The YQ10RSM10SDTF is a highly efficient Schottky Barrier Diode that is designed improving the tradeoff between low VF and low IR. While its low VF it achieves stable opera 2 583Prieinamumas
Min.: 1
Daugkart.: 1
: 4 000

ROHM Semiconductor SCHOTTKY Diodes ir Lygintuvai Trench MOS Structure, 100V, 10A, TO-277A, Highly Efficient SBD: The YQ10RSM10SD is a highly efficient Schottky Barrier Diode that is designed improving the tradeoff between low VF and low IR. While its low VF it achieves stable operation at high temp 7 534Prieinamumas
Min.: 1
Daugkart.: 1
: 4 000

ROHM Semiconductor SCHOTTKY Diodes ir Lygintuvai RECT 100V 12A SM SKY BARRI 3 950Prieinamumas
Min.: 1
Daugkart.: 1
: 4 000

ROHM Semiconductor SCHOTTKY Diodes ir Lygintuvai RECT 100V 12A SM SKY BARRI 3 568Prieinamumas
Min.: 1
Daugkart.: 1
: 4 000

ROHM Semiconductor SCHOTTKY Diodes ir Lygintuvai RECT 100V 15A SM SKY BARRI 5 557Prieinamumas
Min.: 1
Daugkart.: 1
: 4 000

ROHM Semiconductor SCHOTTKY Diodes ir Lygintuvai RECT 100V 15A SM SKY BARRI 4 095Prieinamumas
Min.: 1
Daugkart.: 1
: 4 000

ROHM Semiconductor SCHOTTKY Diodes ir Lygintuvai Trench MOS Structure, 100V, 20A, TO-252, Highly Efficient SBD: The YQ20BGE10SD is a highly efficient Schottky Barrier Diode that is designed improving the tradeoff between low VF and low IR. While its low VF it achieves stable operation at high tempe 4 797Prieinamumas
Min.: 1
Daugkart.: 1
: 2 500

ROHM Semiconductor SCHOTTKY Diodes ir Lygintuvai Trench MOS Structure, 100V, 20A, TO-252, Highly Efficient SBD for Automotive: The YQ20BM10SDFH is a highly efficient Schottky Barrier Diode that is designed improving the tradeoff between low VF and low IR. While its low VF it achieves stable operati 4 497Prieinamumas
2 500Tikėtina 2026-10-23
Min.: 1
Daugkart.: 1
: 2 500

ROHM Semiconductor SCHOTTKY Diodes ir Lygintuvai Trench MOS Structure, 100V, 20A, TO-263L, Highly Efficient SBD for Automotive: The YQ20NL10CDFH is a highly efficient Schottky Barrier Diode that is designed improving the tradeoff between low VF and low IR. While its low VF it achieves stable operat 1 900Prieinamumas
Min.: 1
Daugkart.: 1
: 1 000

ROHM Semiconductor SCHOTTKY Diodes ir Lygintuvai Trench MOS Structure, 100V, 20A, TO-263L, Highly Efficient SBD: The YQ20NL10CD is a highly efficient Schottky Barrier Diode that is designed improving the tradeoff between low VF and low IR. While its low VF it achieves stable operation at high tempe 1 970Prieinamumas
Min.: 1
Daugkart.: 1
: 1 000

ROHM Semiconductor SCHOTTKY Diodes ir Lygintuvai Trench MOS Structure, 100V, 20A, TO-263L, Highly Efficient SBD for Automotive: The YQ20NL10SEFH is a highly efficient Schottky Barrier Diode that is designed improving the tradeoff between low VF and low IR. While its low VF it achieves stable operat 2 000Prieinamumas
Min.: 1
Daugkart.: 1
: 1 000