MOSFETs Nch 60V 12A, DFN2020Y7LSAA, Power MOSFET for Automotive
RF9L120BKFRATCR
ROHM Semiconductor
1:
1,45 €
3 465 Prieinamumas
„Mouser“ Dalies Nr.
755-RF9L120BKFRATCR
ROHM Semiconductor
MOSFETs Nch 60V 12A, DFN2020Y7LSAA, Power MOSFET for Automotive
3 465 Prieinamumas
1
1,45 €
10
0,687 €
100
0,612 €
500
0,481 €
3 000
0,384 €
9 000
Peržiūrėti
1 000
0,458 €
9 000
0,376 €
Pirkti
Min.: 1
Daugkart.: 1
Reel :
3 000
Išsami Informacija
MOSFETs TO263 100V 80A N-CH MOSFET
RJ1P04BBHTL1
ROHM Semiconductor
1:
3,87 €
1 546 Prieinamumas
„Mouser“ Dalies Nr.
755-RJ1P04BBHTL1
ROHM Semiconductor
MOSFETs TO263 100V 80A N-CH MOSFET
1 546 Prieinamumas
1
3,87 €
10
2,55 €
100
1,80 €
500
1,54 €
800
1,52 €
Pirkti
Min.: 1
Daugkart.: 1
Reel :
800
Išsami Informacija
MOSFETs TO263 100V 120A N-CH MOSFET
RJ1P07CBHTL1
ROHM Semiconductor
1:
5,07 €
950 Prieinamumas
„Mouser“ Dalies Nr.
755-RJ1P07CBHTL1
ROHM Semiconductor
MOSFETs TO263 100V 120A N-CH MOSFET
950 Prieinamumas
1
5,07 €
10
2,67 €
100
2,43 €
500
2,15 €
800
2,08 €
Pirkti
Min.: 1
Daugkart.: 1
Reel :
800
Išsami Informacija
MOSFETs TO263 100V 170A N-CH MOSFET
RJ1P10BBHTL1
ROHM Semiconductor
1:
6,99 €
1 567 Prieinamumas
„Mouser“ Dalies Nr.
755-RJ1P10BBHTL1
ROHM Semiconductor
MOSFETs TO263 100V 170A N-CH MOSFET
1 567 Prieinamumas
1
6,99 €
10
4,75 €
100
3,47 €
500
3,40 €
800
3,31 €
Pirkti
Min.: 1
Daugkart.: 1
Reel :
800
Išsami Informacija
MOSFETs Pch -40V -27A, HSMT8AG, Power MOSFET for Automotive
RQ3G270BJFRATCB
ROHM Semiconductor
1:
1,80 €
3 674 Prieinamumas
„Mouser“ Dalies Nr.
755-RQ3G270BJFRATCB
ROHM Semiconductor
MOSFETs Pch -40V -27A, HSMT8AG, Power MOSFET for Automotive
3 674 Prieinamumas
1
1,80 €
10
0,869 €
100
0,772 €
500
0,613 €
3 000
0,525 €
6 000
Peržiūrėti
1 000
0,585 €
6 000
0,506 €
Pirkti
Min.: 1
Daugkart.: 1
Reel :
3 000
Išsami Informacija
MOSFETs Automotive Nch 40V 27A Power MOSFET for ADAS/Info./Lighting/Body.
RQ3G270BKFRATCB
ROHM Semiconductor
1:
1,80 €
3 500 Prieinamumas
„Mouser“ Dalies Nr.
755-RQ3G270BKFRATCB
ROHM Semiconductor
MOSFETs Automotive Nch 40V 27A Power MOSFET for ADAS/Info./Lighting/Body.
3 500 Prieinamumas
1
1,80 €
10
1,15 €
100
0,772 €
500
0,613 €
1 000
0,562 €
3 000
0,502 €
Pirkti
Min.: 1
Daugkart.: 1
Reel :
3 000
Išsami Informacija
MOSFETs HSMT8 N-CH 60V 20A
RQ3L070BGTB1
ROHM Semiconductor
1:
1,66 €
4 218 Prieinamumas
„Mouser“ Dalies Nr.
755-RQ3L070BGTB1
ROHM Semiconductor
MOSFETs HSMT8 N-CH 60V 20A
4 218 Prieinamumas
1
1,66 €
10
0,642 €
100
0,572 €
500
0,449 €
3 000
0,409 €
6 000
Peržiūrėti
6 000
0,355 €
9 000
0,345 €
Pirkti
Min.: 1
Daugkart.: 1
Reel :
3 000
Išsami Informacija
MOSFETs Nch 60V 27A, HSMT8AG, Power MOSFET for Automotive
RQ3L270BKFRATCB
ROHM Semiconductor
1:
1,86 €
3 461 Prieinamumas
„Mouser“ Dalies Nr.
755-RQ3L270BKFRATCB
ROHM Semiconductor
MOSFETs Nch 60V 27A, HSMT8AG, Power MOSFET for Automotive
3 461 Prieinamumas
1
1,86 €
10
0,894 €
100
0,801 €
500
0,636 €
1 000
0,611 €
3 000
0,529 €
Pirkti
Min.: 1
Daugkart.: 1
Reel :
3 000
Išsami Informacija
MOSFETs Nch 60V 27A, HSMT8AG, Power MOSFET for Automotive
RQ3L270BLFRATCB
ROHM Semiconductor
1:
1,86 €
3 500 Prieinamumas
„Mouser“ Dalies Nr.
755-RQ3L270BLFRATCB
ROHM Semiconductor
MOSFETs Nch 60V 27A, HSMT8AG, Power MOSFET for Automotive
3 500 Prieinamumas
1
1,86 €
10
0,894 €
100
0,801 €
500
0,636 €
1 000
0,611 €
3 000
0,529 €
Pirkti
Min.: 1
Daugkart.: 1
Reel :
3 000
Išsami Informacija
MOSFETs Nch 100V 27A, HSMT8AG, Power MOSFET for Automotive
RQ3P270BKFRATCB
ROHM Semiconductor
1:
1,87 €
3 477 Prieinamumas
„Mouser“ Dalies Nr.
755-RQ3P270BKFRATCB
ROHM Semiconductor
MOSFETs Nch 100V 27A, HSMT8AG, Power MOSFET for Automotive
3 477 Prieinamumas
1
1,87 €
10
1,20 €
100
0,806 €
500
0,64 €
3 000
0,554 €
6 000
Peržiūrėti
1 000
0,587 €
6 000
0,526 €
Pirkti
Min.: 1
Daugkart.: 1
Reel :
3 000
Išsami Informacija
MOSFETs HSOP8 N-CH 40V 120A
RS6G120BHTB1
ROHM Semiconductor
1:
3,25 €
2 500 Prieinamumas
„Mouser“ Dalies Nr.
755-RS6G120BHTB1
ROHM Semiconductor
MOSFETs HSOP8 N-CH 40V 120A
2 500 Prieinamumas
1
3,25 €
10
2,12 €
100
1,55 €
500
1,30 €
1 000
1,20 €
2 500
1,15 €
Pirkti
Min.: 1
Daugkart.: 1
Reel :
2 500
Išsami Informacija
MOSFETs HSOP8 N-CH 60V 90A
RS6L090BGTB1
ROHM Semiconductor
1:
2,71 €
2 516 Prieinamumas
„Mouser“ Dalies Nr.
755-RS6L090BGTB1
ROHM Semiconductor
MOSFETs HSOP8 N-CH 60V 90A
2 516 Prieinamumas
1
2,71 €
10
1,76 €
100
1,21 €
500
0,98 €
1 000
0,946 €
2 500
0,877 €
Pirkti
Min.: 1
Daugkart.: 1
Reel :
2 500
Išsami Informacija
MOSFETs HSOP8 N-CH 60V 150A
RS6L120BHTB1
ROHM Semiconductor
1:
3,25 €
2 440 Prieinamumas
„Mouser“ Dalies Nr.
755-RS6L120BHTB1
ROHM Semiconductor
MOSFETs HSOP8 N-CH 60V 150A
2 440 Prieinamumas
1
3,25 €
10
1,64 €
100
1,49 €
500
1,21 €
2 500
1,14 €
Pirkti
Min.: 1
Daugkart.: 1
Reel :
2 500
Išsami Informacija
MOSFETs 100V 8A Dual Nch+Nch, SOP8, Power MOSFET
SH8KE7TB1
ROHM Semiconductor
1:
2,60 €
4 591 Prieinamumas
„Mouser“ Dalies Nr.
755-SH8KE7TB1
ROHM Semiconductor
MOSFETs 100V 8A Dual Nch+Nch, SOP8, Power MOSFET
4 591 Prieinamumas
1
2,60 €
10
1,29 €
100
1,16 €
500
0,937 €
2 500
0,855 €
5 000
Peržiūrėti
1 000
0,894 €
5 000
0,839 €
Pirkti
Min.: 1
Daugkart.: 1
Reel :
2 500
Išsami Informacija
SCHOTTKY Diodes ir Lygintuvai Trench MOS Structure, 100V, 10A, TO-277A, Highly Efficient SBD for Automotive: The YQ10RSM10SDTF is a highly efficient Schottky Barrier Diode that is designed improving the tradeoff between low VF and low IR. While its low VF it achieves stable opera
YQ10RSM10SDTFTL1
ROHM Semiconductor
1:
1,94 €
2 583 Prieinamumas
„Mouser“ Dalies Nr.
755-YQ10RSM10SDTFTL1
ROHM Semiconductor
SCHOTTKY Diodes ir Lygintuvai Trench MOS Structure, 100V, 10A, TO-277A, Highly Efficient SBD for Automotive: The YQ10RSM10SDTF is a highly efficient Schottky Barrier Diode that is designed improving the tradeoff between low VF and low IR. While its low VF it achieves stable opera
2 583 Prieinamumas
1
1,94 €
10
1,25 €
100
0,84 €
500
0,668 €
1 000
Peržiūrėti
4 000
0,556 €
1 000
0,613 €
2 000
0,578 €
4 000
0,556 €
Pirkti
Min.: 1
Daugkart.: 1
Reel :
4 000
Išsami Informacija
SCHOTTKY Diodes ir Lygintuvai Trench MOS Structure, 100V, 10A, TO-277A, Highly Efficient SBD: The YQ10RSM10SD is a highly efficient Schottky Barrier Diode that is designed improving the tradeoff between low VF and low IR. While its low VF it achieves stable operation at high temp
YQ10RSM10SDTL1
ROHM Semiconductor
1:
1,70 €
7 534 Prieinamumas
„Mouser“ Dalies Nr.
755-YQ10RSM10SDTL1
ROHM Semiconductor
SCHOTTKY Diodes ir Lygintuvai Trench MOS Structure, 100V, 10A, TO-277A, Highly Efficient SBD: The YQ10RSM10SD is a highly efficient Schottky Barrier Diode that is designed improving the tradeoff between low VF and low IR. While its low VF it achieves stable operation at high temp
7 534 Prieinamumas
1
1,70 €
10
1,08 €
100
0,728 €
500
0,576 €
4 000
0,474 €
8 000
Peržiūrėti
1 000
0,527 €
2 000
0,486 €
8 000
0,464 €
Pirkti
Min.: 1
Daugkart.: 1
Reel :
4 000
Išsami Informacija
SCHOTTKY Diodes ir Lygintuvai RECT 100V 12A SM SKY BARRI
YQ12RSM10SDTFTL1
ROHM Semiconductor
1:
2,10 €
3 950 Prieinamumas
„Mouser“ Dalies Nr.
755-YQ12RSM10SDTFTL1
ROHM Semiconductor
SCHOTTKY Diodes ir Lygintuvai RECT 100V 12A SM SKY BARRI
3 950 Prieinamumas
1
2,10 €
10
1,02 €
100
0,92 €
500
0,731 €
1 000
Peržiūrėti
4 000
0,619 €
1 000
0,708 €
2 000
0,683 €
4 000
0,619 €
Pirkti
Min.: 1
Daugkart.: 1
Reel :
4 000
Išsami Informacija
SCHOTTKY Diodes ir Lygintuvai RECT 100V 12A SM SKY BARRI
YQ12RSM10SDTL1
ROHM Semiconductor
1:
1,84 €
3 568 Prieinamumas
„Mouser“ Dalies Nr.
755-YQ12RSM10SDTL1
ROHM Semiconductor
SCHOTTKY Diodes ir Lygintuvai RECT 100V 12A SM SKY BARRI
3 568 Prieinamumas
1
1,84 €
10
1,18 €
100
0,79 €
500
0,629 €
1 000
Peržiūrėti
4 000
0,512 €
1 000
0,574 €
2 000
0,537 €
4 000
0,512 €
Pirkti
Min.: 1
Daugkart.: 1
Reel :
4 000
Išsami Informacija
SCHOTTKY Diodes ir Lygintuvai RECT 100V 15A SM SKY BARRI
YQ15RSM10SDTFTL1
ROHM Semiconductor
1:
2,17 €
5 557 Prieinamumas
„Mouser“ Dalies Nr.
755-YQ15RSM10SDTFTL1
ROHM Semiconductor
SCHOTTKY Diodes ir Lygintuvai RECT 100V 15A SM SKY BARRI
5 557 Prieinamumas
1
2,17 €
10
1,39 €
100
0,946 €
500
0,757 €
1 000
Peržiūrėti
4 000
0,638 €
1 000
0,696 €
2 000
0,671 €
4 000
0,638 €
Pirkti
Min.: 1
Daugkart.: 1
Reel :
4 000
Išsami Informacija
SCHOTTKY Diodes ir Lygintuvai RECT 100V 15A SM SKY BARRI
YQ15RSM10SDTL1
ROHM Semiconductor
1:
1,89 €
4 095 Prieinamumas
„Mouser“ Dalies Nr.
755-YQ15RSM10SDTL1
ROHM Semiconductor
SCHOTTKY Diodes ir Lygintuvai RECT 100V 15A SM SKY BARRI
4 095 Prieinamumas
1
1,89 €
10
0,92 €
100
0,818 €
500
0,65 €
1 000
Peržiūrėti
4 000
0,537 €
1 000
0,598 €
2 000
0,558 €
4 000
0,537 €
Pirkti
Min.: 1
Daugkart.: 1
Reel :
4 000
Išsami Informacija
SCHOTTKY Diodes ir Lygintuvai Trench MOS Structure, 100V, 20A, TO-252, Highly Efficient SBD: The YQ20BGE10SD is a highly efficient Schottky Barrier Diode that is designed improving the tradeoff between low VF and low IR. While its low VF it achieves stable operation at high tempe
YQ20BGE10SDTL
ROHM Semiconductor
1:
1,81 €
4 797 Prieinamumas
„Mouser“ Dalies Nr.
755-YQ20BGE10SDTL
ROHM Semiconductor
SCHOTTKY Diodes ir Lygintuvai Trench MOS Structure, 100V, 20A, TO-252, Highly Efficient SBD: The YQ20BGE10SD is a highly efficient Schottky Barrier Diode that is designed improving the tradeoff between low VF and low IR. While its low VF it achieves stable operation at high tempe
4 797 Prieinamumas
1
1,81 €
10
0,877 €
100
0,773 €
500
0,617 €
2 500
0,524 €
5 000
Peržiūrėti
1 000
0,587 €
5 000
0,504 €
Pirkti
Min.: 1
Daugkart.: 1
Reel :
2 500
Išsami Informacija
SCHOTTKY Diodes ir Lygintuvai Trench MOS Structure, 100V, 20A, TO-252, Highly Efficient SBD for Automotive: The YQ20BM10SDFH is a highly efficient Schottky Barrier Diode that is designed improving the tradeoff between low VF and low IR. While its low VF it achieves stable operati
YQ20BM10SDFHTL
ROHM Semiconductor
1:
1,79 €
4 497 Prieinamumas
2 500 Tikėtina 2026-10-23
„Mouser“ Dalies Nr.
755-YQ20BM10SDFHTL
ROHM Semiconductor
SCHOTTKY Diodes ir Lygintuvai Trench MOS Structure, 100V, 20A, TO-252, Highly Efficient SBD for Automotive: The YQ20BM10SDFH is a highly efficient Schottky Barrier Diode that is designed improving the tradeoff between low VF and low IR. While its low VF it achieves stable operati
4 497 Prieinamumas
2 500 Tikėtina 2026-10-23
1
1,79 €
10
1,14 €
100
0,799 €
500
0,651 €
2 500
0,538 €
5 000
Peržiūrėti
1 000
0,593 €
5 000
0,534 €
Pirkti
Min.: 1
Daugkart.: 1
Reel :
2 500
Išsami Informacija
SCHOTTKY Diodes ir Lygintuvai Trench MOS Structure, 100V, 20A, TO-263L, Highly Efficient SBD for Automotive: The YQ20NL10CDFH is a highly efficient Schottky Barrier Diode that is designed improving the tradeoff between low VF and low IR. While its low VF it achieves stable operat
YQ20NL10CDFHTL
ROHM Semiconductor
1:
2,98 €
1 900 Prieinamumas
„Mouser“ Dalies Nr.
755-YQ20NL10CDFHTL
ROHM Semiconductor
SCHOTTKY Diodes ir Lygintuvai Trench MOS Structure, 100V, 20A, TO-263L, Highly Efficient SBD for Automotive: The YQ20NL10CDFH is a highly efficient Schottky Barrier Diode that is designed improving the tradeoff between low VF and low IR. While its low VF it achieves stable operat
1 900 Prieinamumas
1
2,98 €
10
1,94 €
100
1,34 €
500
1,09 €
1 000
0,998 €
2 000
0,989 €
Pirkti
Min.: 1
Daugkart.: 1
Reel :
1 000
Išsami Informacija
SCHOTTKY Diodes ir Lygintuvai Trench MOS Structure, 100V, 20A, TO-263L, Highly Efficient SBD: The YQ20NL10CD is a highly efficient Schottky Barrier Diode that is designed improving the tradeoff between low VF and low IR. While its low VF it achieves stable operation at high tempe
YQ20NL10CDTL
ROHM Semiconductor
1:
2,60 €
1 970 Prieinamumas
„Mouser“ Dalies Nr.
755-YQ20NL10CDTL
ROHM Semiconductor
SCHOTTKY Diodes ir Lygintuvai Trench MOS Structure, 100V, 20A, TO-263L, Highly Efficient SBD: The YQ20NL10CD is a highly efficient Schottky Barrier Diode that is designed improving the tradeoff between low VF and low IR. While its low VF it achieves stable operation at high tempe
1 970 Prieinamumas
1
2,60 €
10
1,69 €
100
1,16 €
500
0,937 €
1 000
0,886 €
2 000
0,83 €
Pirkti
Min.: 1
Daugkart.: 1
Reel :
1 000
Išsami Informacija
SCHOTTKY Diodes ir Lygintuvai Trench MOS Structure, 100V, 20A, TO-263L, Highly Efficient SBD for Automotive: The YQ20NL10SEFH is a highly efficient Schottky Barrier Diode that is designed improving the tradeoff between low VF and low IR. While its low VF it achieves stable operat
YQ20NL10SEFHTL
ROHM Semiconductor
1:
2,63 €
2 000 Prieinamumas
„Mouser“ Dalies Nr.
755-YQ20NL10SEFHTL
ROHM Semiconductor
SCHOTTKY Diodes ir Lygintuvai Trench MOS Structure, 100V, 20A, TO-263L, Highly Efficient SBD for Automotive: The YQ20NL10SEFH is a highly efficient Schottky Barrier Diode that is designed improving the tradeoff between low VF and low IR. While its low VF it achieves stable operat
2 000 Prieinamumas
1
2,63 €
10
1,69 €
100
1,17 €
500
0,946 €
1 000
0,877 €
2 000
Peržiūrėti
2 000
0,846 €
5 000
0,83 €
Pirkti
Min.: 1
Daugkart.: 1
Reel :
1 000
Išsami Informacija