|
|
SiC MOSFET SIC MOS D2PAK-7L 40MOHM 1200V
- NTBG040N120SC1
- onsemi
-
1:
18,72 €
-
947Prieinamumas
|
„Mouser“ Dalies Nr.
863-NTBG040N120SC1
|
onsemi
|
SiC MOSFET SIC MOS D2PAK-7L 40MOHM 1200V
|
|
947Prieinamumas
|
|
Min.: 1
Daugkart.: 1
:
800
|
|
|
SMD/SMT
|
D2PAK-7
|
1 Channel
|
1.2 kV
|
60 A
|
56 mOhms
|
- 15 V, + 25 V
|
4.3 V
|
106 nC
|
- 55 C
|
+ 175 C
|
357 W
|
Enhancement
|
EliteSiC
|
|
|
|
SiC MOSFET SIC MOS TO247-4L 40MOHM 1200V
- NTH4L040N120SC1
- onsemi
-
1:
18,78 €
-
1 341Prieinamumas
|
„Mouser“ Dalies Nr.
863-NTH4L040N120SC1
|
onsemi
|
SiC MOSFET SIC MOS TO247-4L 40MOHM 1200V
|
|
1 341Prieinamumas
|
|
Min.: 1
Daugkart.: 1
|
|
|
Through Hole
|
TO-247-4
|
1 Channel
|
1.2 kV
|
58 A
|
56 mOhms
|
- 15 V, + 25 V
|
4.3 V
|
106 nC
|
- 55 C
|
+ 175 C
|
319 W
|
Enhancement
|
EliteSiC
|
|
|
|
SiC MOSFET SIC MOS 20MOHM 900V
- NTBG020N090SC1
- onsemi
-
1:
24,80 €
-
1 858Prieinamumas
|
„Mouser“ Dalies Nr.
863-NTBG020N090SC1
|
onsemi
|
SiC MOSFET SIC MOS 20MOHM 900V
|
|
1 858Prieinamumas
|
|
Min.: 1
Daugkart.: 1
:
800
|
|
|
SMD/SMT
|
D2PAK-7
|
1 Channel
|
900 V
|
112 A
|
28 mOhms
|
- 8 V, + 22 V
|
4.3 V
|
200 nC
|
- 55 C
|
+ 175 C
|
477 W
|
Enhancement
|
EliteSiC
|
|
|
|
SiC MOSFET SIC MOS TO247-3L 650V
- NTHL045N065SC1
- onsemi
-
1:
11,75 €
-
425Prieinamumas
|
„Mouser“ Dalies Nr.
863-NTHL045N065SC1
|
onsemi
|
SiC MOSFET SIC MOS TO247-3L 650V
|
|
425Prieinamumas
|
|
Min.: 1
Daugkart.: 1
|
|
|
Through Hole
|
TO-247-3
|
1 Channel
|
650 V
|
66 A
|
50 mOhms
|
- 8 V, + 22 V
|
4.3 V
|
105 nC
|
- 55 C
|
+ 175 C
|
291 W
|
Enhancement
|
EliteSiC
|
|
|
|
SiC MOSFET SIC MOS TO247-3L 650V
- NTHL060N065SC1
- onsemi
-
1:
9,00 €
-
497Prieinamumas
|
„Mouser“ Dalies Nr.
863-NTHL060N065SC1
|
onsemi
|
SiC MOSFET SIC MOS TO247-3L 650V
|
|
497Prieinamumas
|
|
Min.: 1
Daugkart.: 1
|
|
|
Through Hole
|
TO-247-3
|
1 Channel
|
650 V
|
47 A
|
70 mOhms
|
- 8 V, + 22 V
|
4.3 V
|
74 nC
|
- 55 C
|
+ 175 C
|
176 W
|
Enhancement
|
EliteSiC
|
|
|
|
SiC MOSFET SIC MOS TO247-4L 650V
- NTH4L045N065SC1
- onsemi
-
1:
10,74 €
-
1 589Prieinamumas
|
„Mouser“ Dalies Nr.
863-NTH4L045N065SC1
|
onsemi
|
SiC MOSFET SIC MOS TO247-4L 650V
|
|
1 589Prieinamumas
|
|
Min.: 1
Daugkart.: 1
|
|
|
Through Hole
|
TO-247-4
|
1 Channel
|
650 V
|
55 A
|
50 mOhms
|
- 8 V, + 22 V
|
4.3 V
|
105 nC
|
- 55 C
|
+ 175 C
|
187 W
|
Enhancement
|
EliteSiC
|
|
|
|
SiC MOSFET SIC MOS TO247-4L 650V
- NTH4L060N065SC1
- onsemi
-
1:
9,71 €
-
372Prieinamumas
|
„Mouser“ Dalies Nr.
863-NTH4L060N065SC1
|
onsemi
|
SiC MOSFET SIC MOS TO247-4L 650V
|
|
372Prieinamumas
|
|
Min.: 1
Daugkart.: 1
|
|
|
Through Hole
|
TO-247-4
|
1 Channel
|
650 V
|
33 A
|
70 mOhms
|
- 18 V, + 18 V
|
4.3 V
|
74 nC
|
- 55 C
|
+ 175 C
|
88 W
|
Enhancement
|
EliteSiC
|
|
|
|
SiC MOSFET SIC MOS TO247-3L 650V
- NTHL025N065SC1
- onsemi
-
1:
17,00 €
-
1 046Prieinamumas
|
„Mouser“ Dalies Nr.
863-NTHL025N065SC1
|
onsemi
|
SiC MOSFET SIC MOS TO247-3L 650V
|
|
1 046Prieinamumas
|
|
Min.: 1
Daugkart.: 1
|
|
|
Through Hole
|
TO-247-3
|
1 Channel
|
650 V
|
99 A
|
28.5 mOhms
|
- 8 V, + 22 V
|
4.3 V
|
164 nC
|
- 55 C
|
+ 175 C
|
348 W
|
Enhancement
|
EliteSiC
|
|
|
|
SiC MOSFET SIC MOS D2PAK-7L 160MOHM 1200V
- NTBG160N120SC1
- onsemi
-
1:
8,38 €
-
1 788Prieinamumas
|
„Mouser“ Dalies Nr.
863-NTBG160N120SC1
|
onsemi
|
SiC MOSFET SIC MOS D2PAK-7L 160MOHM 1200V
|
|
1 788Prieinamumas
|
|
Min.: 1
Daugkart.: 1
:
800
|
|
|
SMD/SMT
|
D2PAK-7
|
1 Channel
|
1.2 kV
|
19.5 A
|
224 mOhms
|
- 15 V, + 25 V
|
4.3 V
|
33.8 nC
|
- 55 C
|
+ 175 C
|
136 W
|
Enhancement
|
EliteSiC
|
|
|
|
SiC MOSFET 60MOHM 900V
- NTHL060N090SC1
- onsemi
-
1:
10,30 €
-
897Prieinamumas
|
„Mouser“ Dalies Nr.
863-NTHL060N090SC1
|
onsemi
|
SiC MOSFET 60MOHM 900V
|
|
897Prieinamumas
|
|
Min.: 1
Daugkart.: 1
|
|
|
Through Hole
|
TO-247-3
|
1 Channel
|
900 V
|
46 A
|
84 mOhms
|
- 8 V, + 22 V
|
4.3 V
|
87 nC
|
- 55 C
|
+ 175 C
|
221 W
|
Enhancement
|
EliteSiC
|
|
|
|
SiC MOSFET SIC MOSFET 900V TO247-4L 60MOHM
- NTH4L060N090SC1
- onsemi
-
1:
10,68 €
-
314Prieinamumas
|
„Mouser“ Dalies Nr.
863-NTH4L060N090SC1
|
onsemi
|
SiC MOSFET SIC MOSFET 900V TO247-4L 60MOHM
|
|
314Prieinamumas
|
|
Min.: 1
Daugkart.: 1
|
|
|
Through Hole
|
TO-247-4
|
1 Channel
|
900 V
|
46 A
|
84 mOhms
|
- 8 V, + 22 V
|
4.3 V
|
87 nC
|
- 55 C
|
+ 175 C
|
221 W
|
Enhancement
|
EliteSiC
|
|
|
|
SiC MOSFET SIC MOS 60MOHM 900V
- NTBG060N090SC1
- onsemi
-
1:
11,80 €
-
465Prieinamumas
|
„Mouser“ Dalies Nr.
863-NTBG060N090SC1
|
onsemi
|
SiC MOSFET SIC MOS 60MOHM 900V
|
|
465Prieinamumas
|
|
Min.: 1
Daugkart.: 1
:
800
|
|
|
SMD/SMT
|
D2PAK-7
|
1 Channel
|
900 V
|
44 A
|
84 mOhms
|
- 8 V, + 22 V
|
4.3 V
|
88 nC
|
- 55 C
|
+ 175 C
|
211 W
|
Enhancement
|
EliteSiC
|
|
|
|
SiC MOSFET SIC MOS D2PAK-7L 650V
- NTBG045N065SC1
- onsemi
-
1:
11,46 €
-
794Prieinamumas
|
„Mouser“ Dalies Nr.
863-NTBG045N065SC1
|
onsemi
|
SiC MOSFET SIC MOS D2PAK-7L 650V
|
|
794Prieinamumas
|
|
Min.: 1
Daugkart.: 1
:
800
|
|
|
SMD/SMT
|
D2PAK-7
|
1 Channel
|
650 V
|
62 A
|
50 mOhms
|
- 8 V, + 22 V
|
4.3 V
|
105 nC
|
- 55 C
|
+ 175 C
|
121 W
|
Enhancement
|
EliteSiC
|
|
|
|
SiC MOSFET SIC MOS TO247-4L 650V
- NTH4L015N065SC1
- onsemi
-
1:
25,55 €
-
202Prieinamumas
|
„Mouser“ Dalies Nr.
863-NTH4L015N065SC1
|
onsemi
|
SiC MOSFET SIC MOS TO247-4L 650V
|
|
202Prieinamumas
|
|
Min.: 1
Daugkart.: 1
|
|
|
Through Hole
|
TO-247-4
|
1 Channel
|
650 V
|
142 A
|
18 mOhms
|
- 8 V, + 22 V
|
4.3 V
|
283 nC
|
- 55 C
|
+ 150 C
|
500 W
|
Enhancement
|
EliteSiC
|
|
|
|
SiC MOSFET SIC MOS D2PAK-7L 650V
- NTBG015N065SC1
- onsemi
-
1:
23,48 €
-
2 083Prieinamumas
|
„Mouser“ Dalies Nr.
863-NTBG015N065SC1
|
onsemi
|
SiC MOSFET SIC MOS D2PAK-7L 650V
|
|
2 083Prieinamumas
|
|
Min.: 1
Daugkart.: 1
:
800
|
|
|
SMD/SMT
|
D2PAK-7
|
1 Channel
|
650 V
|
145 A
|
18 mOhms
|
- 8 V, + 22 V
|
4.3 V
|
283 nC
|
- 55 C
|
+ 175 C
|
250 W
|
Enhancement
|
EliteSiC
|
|
|
|
SiC MOSFET SIC MOS 20MW 1200V
- NTBG020N120SC1
- onsemi
-
1:
34,60 €
-
2 068Prieinamumas
|
„Mouser“ Dalies Nr.
863-NTBG020N120SC1
|
onsemi
|
SiC MOSFET SIC MOS 20MW 1200V
|
|
2 068Prieinamumas
|
|
Min.: 1
Daugkart.: 1
:
800
|
|
|
SMD/SMT
|
D2PAK-7
|
1 Channel
|
1.2 kV
|
98 A
|
28 mOhms
|
- 15 V, + 25 V
|
4.3 V
|
220 nC
|
- 55 C
|
+ 175 C
|
468 W
|
Enhancement
|
EliteSiC
|
|
|
|
SiC MOSFET 20MW 1200V
- NTHL020N120SC1
- onsemi
-
1:
34,32 €
-
570Prieinamumas
-
900Tikėtina 2026-12-29
|
„Mouser“ Dalies Nr.
863-NTHL020N120SC1
|
onsemi
|
SiC MOSFET 20MW 1200V
|
|
570Prieinamumas
900Tikėtina 2026-12-29
|
|
Min.: 1
Daugkart.: 1
|
|
|
Through Hole
|
TO-247-3
|
1 Channel
|
1.2 kV
|
103 A
|
28 mOhms
|
- 15 V, + 25 V
|
4.3 V
|
203 nC
|
- 55 C
|
+ 175 C
|
535 W
|
Enhancement
|
EliteSiC
|
|
|
|
SiC MOSFET SIC MOS D2PAK-7L 80MOHM 1200V
- NTBG080N120SC1
- onsemi
-
1:
12,14 €
-
439Prieinamumas
|
„Mouser“ Dalies Nr.
863-NTBG080N120SC1
|
onsemi
|
SiC MOSFET SIC MOS D2PAK-7L 80MOHM 1200V
|
|
439Prieinamumas
|
|
Min.: 1
Daugkart.: 1
:
800
|
|
|
SMD/SMT
|
D2PAK-7
|
1 Channel
|
1.2 kV
|
30 A
|
110 mOhms
|
- 15 V, + 25 V
|
4.3 V
|
56 nC
|
- 55 C
|
+ 175 C
|
179 W
|
Enhancement
|
EliteSiC
|
|
|
|
SiC MOSFET SIC MOS TO247-4L 20MOHM 1200V
- NTH4L020N120SC1
- onsemi
-
1:
30,49 €
-
142Prieinamumas
|
„Mouser“ Dalies Nr.
863-NTH4L020N120SC1
|
onsemi
|
SiC MOSFET SIC MOS TO247-4L 20MOHM 1200V
|
|
142Prieinamumas
|
|
Min.: 1
Daugkart.: 1
|
|
|
Through Hole
|
TO-247-4
|
1 Channel
|
1.2 kV
|
102 A
|
28 mOhms
|
- 15 V, + 25 V
|
4.3 V
|
220 nC
|
- 55 C
|
+ 175 C
|
510 W
|
Enhancement
|
EliteSiC
|
|
|
|
SiC MOSFET SIC MOS TO247-4L 1200V 160MOHM INDUSTRY PART
- NTH4L160N120SC1
- onsemi
-
1:
9,15 €
-
1 664Prieinamumas
|
„Mouser“ Dalies Nr.
863-NTH4L160N120SC1
|
onsemi
|
SiC MOSFET SIC MOS TO247-4L 1200V 160MOHM INDUSTRY PART
|
|
1 664Prieinamumas
|
|
Min.: 1
Daugkart.: 1
|
|
|
Through Hole
|
TO-247-4
|
1 Channel
|
1.2 kV
|
17.3 A
|
224 mOhms
|
- 15 V, + 25 V
|
4.3 V
|
34 nC
|
- 55 C
|
+ 175 C
|
111 W
|
Enhancement
|
EliteSiC
|
|
|
|
SiC MOSFET 20MOHM 900V
- NTHL020N090SC1
- onsemi
-
1:
26,44 €
-
210Prieinamumas
-
450Tikėtina 2026-11-30
|
„Mouser“ Dalies Nr.
863-NTHL020N090SC1
|
onsemi
|
SiC MOSFET 20MOHM 900V
|
|
210Prieinamumas
450Tikėtina 2026-11-30
|
|
Min.: 1
Daugkart.: 1
|
|
|
Through Hole
|
TO-247-3
|
1 Channel
|
900 V
|
118 A
|
28 mOhms
|
- 8 V, + 22 V
|
4.3 V
|
196 nC
|
- 55 C
|
+ 175 C
|
503 W
|
Enhancement
|
EliteSiC
|
|
|
|
SiC MOSFET SIC MOS TO247-3L 40MOHM 1200V
- NTHL040N120SC1
- onsemi
-
1:
20,73 €
-
406Prieinamumas
|
„Mouser“ Dalies Nr.
863-NTHL040N120SC1
|
onsemi
|
SiC MOSFET SIC MOS TO247-3L 40MOHM 1200V
|
|
406Prieinamumas
|
|
Min.: 1
Daugkart.: 1
|
|
|
Through Hole
|
TO-247-3
|
1 Channel
|
1.2 kV
|
60 A
|
56 mOhms
|
- 15 V, + 25 V
|
4.3 V
|
106 nC
|
- 55 C
|
+ 175 C
|
348 W
|
Enhancement
|
EliteSiC
|
|
|
|
SiC MOSFET SIC MOS TO247-3L 160MOHM 1200V
- NTHL160N120SC1
- onsemi
-
1:
8,92 €
-
867Prieinamumas
|
„Mouser“ Dalies Nr.
863-NTHL160N120SC1
|
onsemi
|
SiC MOSFET SIC MOS TO247-3L 160MOHM 1200V
|
|
867Prieinamumas
|
|
Min.: 1
Daugkart.: 1
|
|
|
Through Hole
|
TO-247-3
|
1 Channel
|
1.2 kV
|
17 A
|
224 mOhms
|
- 15 V, + 25 V
|
4.3 V
|
34 nC
|
- 55 C
|
+ 175 C
|
119 W
|
Enhancement
|
EliteSiC
|
|
|
|
SiC MOSFET SIC MOS TO247-4L 80MOHM 1200V
- NTH4L080N120SC1
- onsemi
-
1:
11,61 €
-
172Prieinamumas
|
„Mouser“ Dalies Nr.
863-NTH4L080N120SC1
|
onsemi
|
SiC MOSFET SIC MOS TO247-4L 80MOHM 1200V
|
|
172Prieinamumas
|
|
Min.: 1
Daugkart.: 1
|
|
|
Through Hole
|
TO-247-4
|
1 Channel
|
1.2 kV
|
29 A
|
110 mOhms
|
- 15 V, + 25 V
|
4.3 V
|
56 nC
|
- 55 C
|
+ 175 C
|
170 W
|
Enhancement
|
EliteSiC
|
|