Rezultatai: 24
Pasirinkite Vaizdas Dalies Nr. Gam. Aprašymas Duomenų Lapas Prieinamumas Kainodara (EUR) Filtruokite lentelėje pateiktus rezultatus pagal vieneto kainą, remdamiesi kiekiu. Qty. RoHS ECAD modelis Montavimo stilius Pakuotė / Korpusas Kanalų skaičius Vds - nutekėjimo-šaltinio pramušimo įtampa svar. – nuolatinio išleidimo srovė RDS On - Drain-Source Varža Vgs - užtūros-šaltinio įtampa Vgs th - užtūros-šaltinio slenkstinė įtampa Qg – vartų krūvis Minimali darbinė temperatūra Didžiausia darbinė temperatūra Pd - skaidos galia Kanalas Mode Prekinis pavadinimas
onsemi SiC MOSFET SIC MOS D2PAK-7L 40MOHM 1200V 947Prieinamumas
Pjaunama Juosta
18,72 €
14,07 €
13,31 €
Ritė
13,31 €
Min.: 1
Daugkart.: 1
: 800
SMD/SMT D2PAK-7 1 Channel 1.2 kV 60 A 56 mOhms - 15 V, + 25 V 4.3 V 106 nC - 55 C + 175 C 357 W Enhancement EliteSiC

onsemi SiC MOSFET SIC MOS TO247-4L 40MOHM 1200V 1 341Prieinamumas
18,78 €
13,24 €
Min.: 1
Daugkart.: 1
Through Hole TO-247-4 1 Channel 1.2 kV 58 A 56 mOhms - 15 V, + 25 V 4.3 V 106 nC - 55 C + 175 C 319 W Enhancement EliteSiC
onsemi SiC MOSFET SIC MOS 20MOHM 900V 1 858Prieinamumas
Pjaunama Juosta
24,80 €
19,24 €
18,21 €
Ritė
18,21 €
Min.: 1
Daugkart.: 1
: 800
SMD/SMT D2PAK-7 1 Channel 900 V 112 A 28 mOhms - 8 V, + 22 V 4.3 V 200 nC - 55 C + 175 C 477 W Enhancement EliteSiC

onsemi SiC MOSFET SIC MOS TO247-3L 650V 425Prieinamumas
11,75 €
7,01 €
Min.: 1
Daugkart.: 1
Through Hole TO-247-3 1 Channel 650 V 66 A 50 mOhms - 8 V, + 22 V 4.3 V 105 nC - 55 C + 175 C 291 W Enhancement EliteSiC

onsemi SiC MOSFET SIC MOS TO247-3L 650V 497Prieinamumas
9,00 €
5,98 €
5,63 €
Min.: 1
Daugkart.: 1
Through Hole TO-247-3 1 Channel 650 V 47 A 70 mOhms - 8 V, + 22 V 4.3 V 74 nC - 55 C + 175 C 176 W Enhancement EliteSiC

onsemi SiC MOSFET SIC MOS TO247-4L 650V 1 589Prieinamumas
10,74 €
7,44 €
7,29 €
Min.: 1
Daugkart.: 1
Through Hole TO-247-4 1 Channel 650 V 55 A 50 mOhms - 8 V, + 22 V 4.3 V 105 nC - 55 C + 175 C 187 W Enhancement EliteSiC

onsemi SiC MOSFET SIC MOS TO247-4L 650V 372Prieinamumas
9,71 €
6,30 €
5,98 €
Min.: 1
Daugkart.: 1
Through Hole TO-247-4 1 Channel 650 V 33 A 70 mOhms - 18 V, + 18 V 4.3 V 74 nC - 55 C + 175 C 88 W Enhancement EliteSiC

onsemi SiC MOSFET SIC MOS TO247-3L 650V 1 046Prieinamumas
17,00 €
12,02 €
Min.: 1
Daugkart.: 1
Through Hole TO-247-3 1 Channel 650 V 99 A 28.5 mOhms - 8 V, + 22 V 4.3 V 164 nC - 55 C + 175 C 348 W Enhancement EliteSiC
onsemi SiC MOSFET SIC MOS D2PAK-7L 160MOHM 1200V 1 788Prieinamumas
Pjaunama Juosta
8,38 €
4,90 €
4,58 €
4,33 €
Ritė
4,33 €
Min.: 1
Daugkart.: 1
: 800
SMD/SMT D2PAK-7 1 Channel 1.2 kV 19.5 A 224 mOhms - 15 V, + 25 V 4.3 V 33.8 nC - 55 C + 175 C 136 W Enhancement EliteSiC

onsemi SiC MOSFET 60MOHM 900V 897Prieinamumas
10,30 €
7,14 €
6,94 €
Min.: 1
Daugkart.: 1
Through Hole TO-247-3 1 Channel 900 V 46 A 84 mOhms - 8 V, + 22 V 4.3 V 87 nC - 55 C + 175 C 221 W Enhancement EliteSiC

onsemi SiC MOSFET SIC MOSFET 900V TO247-4L 60MOHM 314Prieinamumas
10,68 €
7,45 €
7,30 €
Min.: 1
Daugkart.: 1
Through Hole TO-247-4 1 Channel 900 V 46 A 84 mOhms - 8 V, + 22 V 4.3 V 87 nC - 55 C + 175 C 221 W Enhancement EliteSiC
onsemi SiC MOSFET SIC MOS 60MOHM 900V 465Prieinamumas
Pjaunama Juosta
11,80 €
7,57 €
7,17 €
Ritė
7,17 €
Min.: 1
Daugkart.: 1
: 800
SMD/SMT D2PAK-7 1 Channel 900 V 44 A 84 mOhms - 8 V, + 22 V 4.3 V 88 nC - 55 C + 175 C 211 W Enhancement EliteSiC
onsemi SiC MOSFET SIC MOS D2PAK-7L 650V 794Prieinamumas
Pjaunama Juosta
11,46 €
7,49 €
7,13 €
7,09 €
Ritė
7,09 €
Min.: 1
Daugkart.: 1
: 800
SMD/SMT D2PAK-7 1 Channel 650 V 62 A 50 mOhms - 8 V, + 22 V 4.3 V 105 nC - 55 C + 175 C 121 W Enhancement EliteSiC

onsemi SiC MOSFET SIC MOS TO247-4L 650V 202Prieinamumas
25,55 €
17,94 €
Min.: 1
Daugkart.: 1
Through Hole TO-247-4 1 Channel 650 V 142 A 18 mOhms - 8 V, + 22 V 4.3 V 283 nC - 55 C + 150 C 500 W Enhancement EliteSiC
onsemi SiC MOSFET SIC MOS D2PAK-7L 650V 2 083Prieinamumas
Pjaunama Juosta
23,48 €
18,96 €
17,87 €
17,71 €
Ritė
17,71 €
Min.: 1
Daugkart.: 1
: 800
SMD/SMT D2PAK-7 1 Channel 650 V 145 A 18 mOhms - 8 V, + 22 V 4.3 V 283 nC - 55 C + 175 C 250 W Enhancement EliteSiC
onsemi SiC MOSFET SIC MOS 20MW 1200V 2 068Prieinamumas
Pjaunama Juosta
34,60 €
26,17 €
26,15 €
24,78 €
Ritė
24,78 €
Min.: 1
Daugkart.: 1
: 800
SMD/SMT D2PAK-7 1 Channel 1.2 kV 98 A 28 mOhms - 15 V, + 25 V 4.3 V 220 nC - 55 C + 175 C 468 W Enhancement EliteSiC

onsemi SiC MOSFET 20MW 1200V 570Prieinamumas
900Tikėtina 2026-12-29
34,32 €
24,20 €
Min.: 1
Daugkart.: 1
Through Hole TO-247-3 1 Channel 1.2 kV 103 A 28 mOhms - 15 V, + 25 V 4.3 V 203 nC - 55 C + 175 C 535 W Enhancement EliteSiC
onsemi SiC MOSFET SIC MOS D2PAK-7L 80MOHM 1200V 439Prieinamumas
Pjaunama Juosta
12,14 €
7,23 €
6,84 €
Ritė
6,84 €
Min.: 1
Daugkart.: 1
: 800
SMD/SMT D2PAK-7 1 Channel 1.2 kV 30 A 110 mOhms - 15 V, + 25 V 4.3 V 56 nC - 55 C + 175 C 179 W Enhancement EliteSiC

onsemi SiC MOSFET SIC MOS TO247-4L 20MOHM 1200V 142Prieinamumas
30,49 €
24,31 €
Min.: 1
Daugkart.: 1
Through Hole TO-247-4 1 Channel 1.2 kV 102 A 28 mOhms - 15 V, + 25 V 4.3 V 220 nC - 55 C + 175 C 510 W Enhancement EliteSiC

onsemi SiC MOSFET SIC MOS TO247-4L 1200V 160MOHM INDUSTRY PART 1 664Prieinamumas
9,15 €
6,46 €
5,38 €
4,80 €
4,49 €
Min.: 1
Daugkart.: 1
Through Hole TO-247-4 1 Channel 1.2 kV 17.3 A 224 mOhms - 15 V, + 25 V 4.3 V 34 nC - 55 C + 175 C 111 W Enhancement EliteSiC

onsemi SiC MOSFET 20MOHM 900V 210Prieinamumas
450Tikėtina 2026-11-30
26,44 €
18,40 €
18,11 €
Min.: 1
Daugkart.: 1
Through Hole TO-247-3 1 Channel 900 V 118 A 28 mOhms - 8 V, + 22 V 4.3 V 196 nC - 55 C + 175 C 503 W Enhancement EliteSiC

onsemi SiC MOSFET SIC MOS TO247-3L 40MOHM 1200V 406Prieinamumas
20,73 €
13,06 €
Min.: 1
Daugkart.: 1
Through Hole TO-247-3 1 Channel 1.2 kV 60 A 56 mOhms - 15 V, + 25 V 4.3 V 106 nC - 55 C + 175 C 348 W Enhancement EliteSiC

onsemi SiC MOSFET SIC MOS TO247-3L 160MOHM 1200V 867Prieinamumas
8,92 €
4,89 €
4,51 €
4,39 €
Min.: 1
Daugkart.: 1
Through Hole TO-247-3 1 Channel 1.2 kV 17 A 224 mOhms - 15 V, + 25 V 4.3 V 34 nC - 55 C + 175 C 119 W Enhancement EliteSiC

onsemi SiC MOSFET SIC MOS TO247-4L 80MOHM 1200V 172Prieinamumas
11,61 €
6,44 €
6,15 €
Min.: 1
Daugkart.: 1
Through Hole TO-247-4 1 Channel 1.2 kV 29 A 110 mOhms - 15 V, + 25 V 4.3 V 56 nC - 55 C + 175 C 170 W Enhancement EliteSiC