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MOSFET moduliai Silicon Carbide (SiC) Module EliteSiC, 11 mohm SiC M3S MOSFET, 1200 V, new Tim, 4-PACK Full Bridge Topology, F2 Package
- NXH011F120M3F2P1THG
- onsemi
-
1:
127,15 €
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20Tikėtina 2026-11-24
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Naujas Produktas
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„Mouser“ Dalies Nr.
863-011F120M3F2P1THG
Naujas Produktas
|
onsemi
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MOSFET moduliai Silicon Carbide (SiC) Module EliteSiC, 11 mohm SiC M3S MOSFET, 1200 V, new Tim, 4-PACK Full Bridge Topology, F2 Package
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20Tikėtina 2026-11-24
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Min.: 1
Daugkart.: 1
Maks.: 2
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SiC
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Press Fit
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N-Channel
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4 Channel
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1.2 kV
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105 A
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16 mOhms
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- 10 V, + 22 V
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4.4 V
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- 40 C
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+ 175 C
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244 W
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Tray
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MOSFET moduliai Silicon Carbide (SiC) Module, 11 mohm SiC M3S MOSFET, 1200 V, new TIM, TNPC Topology in F2 Package
- NXH011T120M3F2P1THG
- onsemi
-
1:
114,29 €
-
20Tikėtina 2026-11-24
-
Naujas Produktas
|
„Mouser“ Dalies Nr.
863-011T120M3F2P1THG
Naujas Produktas
|
onsemi
|
MOSFET moduliai Silicon Carbide (SiC) Module, 11 mohm SiC M3S MOSFET, 1200 V, new TIM, TNPC Topology in F2 Package
|
|
20Tikėtina 2026-11-24
|
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Min.: 1
Daugkart.: 1
Maks.: 2
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SiC
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Press Fit
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N-Channel
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4 Channel
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1.2 kV
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91 A
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16 mOhms
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- 10 V, + 22 V
|
4.4 V
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- 40 C
|
+ 175 C
|
272 W
|
Tray
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MOSFET moduliai 15 mohm SiC M3S MOSFET, 1200 V, new TIM, 4-PACK Full Bridge Topology,F1Package
- NXH015F120M3F1P1TG
- onsemi
-
1:
64,17 €
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28Tikėtina 2026-10-13
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Naujas Produktas
|
„Mouser“ Dalies Nr.
863-H015F120M3F1P1TG
Naujas Produktas
|
onsemi
|
MOSFET moduliai 15 mohm SiC M3S MOSFET, 1200 V, new TIM, 4-PACK Full Bridge Topology,F1Package
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28Tikėtina 2026-10-13
|
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Min.: 1
Daugkart.: 1
Maks.: 3
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SiC
|
Press Fit
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N-Channel
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4 Channel
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1.2 kV
|
77 A
|
19 mOhms
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- 10 V, + 22 V
|
4.4 V
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- 40 C
|
+ 175 C
|
198 W
|
Tray
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MOSFET moduliai EliteSiC, 6 m , 1200 V, SiC M3 MOSFET, 2-PACK Half Bridge Topology, F1 Package
- NXH006P120M3F1PG
- onsemi
-
1:
62,52 €
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28Tikėtina 2027-02-16
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Naujas Produktas
|
„Mouser“ Dalies Nr.
863-NXH006P120M3F1PG
Naujas Produktas
|
onsemi
|
MOSFET moduliai EliteSiC, 6 m , 1200 V, SiC M3 MOSFET, 2-PACK Half Bridge Topology, F1 Package
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28Tikėtina 2027-02-16
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Min.: 1
Daugkart.: 1
Maks.: 3
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SiC
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Press Fit
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N-Channel
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2 Channel
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1.2 kV
|
200 A
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9 mOhms
|
- 10 V, + 22 V
|
4.4 V
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- 40 C
|
+ 175 C
|
333 W
|
Tray
|
|
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MOSFET moduliai EliteSiC, 6 m , 1200 V, SiC M3 MOSFET, 2-PACK Half Bridge Topology, F1 Package
- NXH006P120M3F1PNG
- onsemi
-
1:
69,35 €
-
28Tikėtina 2027-02-16
-
Naujas Produktas
|
„Mouser“ Dalies Nr.
863-XH006P120M3F1PNG
Naujas Produktas
|
onsemi
|
MOSFET moduliai EliteSiC, 6 m , 1200 V, SiC M3 MOSFET, 2-PACK Half Bridge Topology, F1 Package
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|
28Tikėtina 2027-02-16
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Min.: 1
Daugkart.: 1
Maks.: 3
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SiC
|
Press Fit
|
N-Channel
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2 Channel
|
1.2 kV
|
240 A
|
9 mOhms
|
- 10 V, + 22 V
|
4.4 V
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- 40 C
|
+ 175 C
|
500 W
|
Tray
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MOSFET moduliai EliteSiC, 8 m , 1200 V, SiC M3 MOSFET, 2-PACK Half Bridge Topology, F1 Package
- NXH008P120M3F1PNG
- onsemi
-
1:
69,03 €
-
28Tikėtina 2027-02-16
-
Naujas Produktas
|
„Mouser“ Dalies Nr.
863-XH008P120M3F1PNG
Naujas Produktas
|
onsemi
|
MOSFET moduliai EliteSiC, 8 m , 1200 V, SiC M3 MOSFET, 2-PACK Half Bridge Topology, F1 Package
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28Tikėtina 2027-02-16
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Min.: 1
Daugkart.: 1
Maks.: 3
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SiC
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Press Fit
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N-Channel
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2 Channel
|
1.2 kV
|
145 A
|
10.9 mOhms
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- 10 V, + 22 V
|
4.4 V
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- 40 C
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+ 175 C
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382 W
|
Tray
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Lietuva