RGSx0TSX2x Field Stop Trench IGBTs

ROHM Semiconductor RGSx0TSX2x Field Stop Trench IGBTs are 10µs SCSOA (Short Circuit Safety Operating Area) guaranteed Insulated Gate Bipolar Transistors, suitable for general inverter, UPS, PV inverters, and power conditioner applications. The RGSx0TSX2x IGBTs offer low conduction loss that contributes to reduced size and improved efficiency. These devices utilize original trench-gate and thin-wafer technologies. These technologies help achieve low collector-emitter saturation voltage (VCE(sat)) with reduced switching losses. These IGBTs provide increased energy savings in a variety of high voltage and high current applications.

Rezultatai: 6
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Qty. RoHS ECAD modelis Technologijos
Pakuotė / Korpusas
Montavimo stilius
Configuration
Collector- Emitter Voltage VCEO Max
Kolektoriaus ir Emiterio Stoties Įtampa
Didžiausia vartų emiterio įtampa
Nuolatinė kolektoriaus srovė esant 25 C
Pd - skaidos galia
Minimali darbinė temperatūra
Didžiausia darbinė temperatūra
Pakavimas
ROHM Semiconductor IGBT 10 s Short-Circuit Tolerance, 1200V 25A, Field Stop Trench IGBT
Duomenų Lapas
711Prieinamumas
Min.: 1
Daugkart.: 1

Si TO-247N-3 Through Hole Single 1.2 kV 2.1 V 30 V 50 A 395 W - 40 C + 175 C Tube
ROHM Semiconductor IGBT 10 s Short-Circuit Tolerance, 1200V 40A, Field Stop Trench IGBT
Duomenų Lapas
868Prieinamumas
Min.: 1
Daugkart.: 1

Si TO-247N-3 Through Hole Single 1.2 kV 2.1 V 30 V 80 A 555 W - 40 C + 175 C Tube
ROHM Semiconductor IGBT 10 s Short-Circuit Tolerance, 1200V 15A, FRD Built-in, Field Stop Trench IGBT
Duomenų Lapas
486Prieinamumas
Min.: 1
Daugkart.: 1

Si TO-247N-3 Through Hole Single 1.2 kV 2.1 V 30 V 30 A 267 W - 40 C + 175 C Tube
ROHM Semiconductor IGBT 10 s Short-Circuit Tolerance, 1200V 40A, FRD Built-in, Field Stop Trench IGBT
Duomenų Lapas
802Prieinamumas
Min.: 1
Daugkart.: 1

Si TO-247N-3 Through Hole Single 1.2 kV 2.1 V 30 V 80 A 555 W - 40 C + 175 C Tube
ROHM Semiconductor IGBT 10s Short-Circuit Tolerance, 1200V 15A, Field Stop Trench IGBT
Duomenų Lapas
886Prieinamumas
Min.: 1
Daugkart.: 1

Si TO-247N-3 Through Hole Single 1.2 kV 2.1 V 30 V 30 A 267 W - 40 C + 175 C Tube
ROHM Semiconductor IGBT 10 s Short-Circuit Tolerance, 1200V 25A, FRD Built-in, Field Stop Trench IGBT
Duomenų Lapas
218Prieinamumas
Min.: 1
Daugkart.: 1

Si TO-247N-3 Through Hole Single 1.2 kV 2.1 V 30 V 50 A 395 W - 40 C + 175 C Tube