MOSFETs HIGH POWER_NEW
IPW95R060PFD7XKSA1
Infineon Technologies
1:
12,96 €
782 Prieinamumas
„Mouser“ Dalies Nr.
726-IPW95R060PFD7XKS
Infineon Technologies
MOSFETs HIGH POWER_NEW
782 Prieinamumas
Pirkti
Min.: 1
Daugkart.: 1
Si
Through Hole
TO-247-3
N-Channel
1 Channel
950 V
74.7 A
60 mOhms
30 V
3.5 V
315 nC
- 55 C
+ 150 C
446 W
Enhancement
Tube
MOSFETs LOW POWER_NEW
IPB95R310PFD7ATMA1
Infineon Technologies
1:
3,56 €
1 835 Prieinamumas
„Mouser“ Dalies Nr.
726-IPB95R310PFD7ATM
Infineon Technologies
MOSFETs LOW POWER_NEW
1 835 Prieinamumas
Pirkti
Min.: 1
Daugkart.: 1
Reel :
1 000
Išsami Informacija
Si
SMD/SMT
D2PAK-3 (TO-263-3)
N-Channel
1 Channel
950 V
17.5 A
310 mOhms
30 V
3.5 V
61 nC
- 55 C
+ 150 C
125 W
Enhancement
Reel, Cut Tape, MouseReel
MOSFETs LOW POWER_NEW
IPA95R450PFD7XKSA1
Infineon Technologies
1:
3,02 €
712 Prieinamumas
„Mouser“ Dalies Nr.
726-IPA95R450PFD7XKS
Infineon Technologies
MOSFETs LOW POWER_NEW
712 Prieinamumas
Pirkti
Min.: 1
Daugkart.: 1
Si
Through Hole
TO-220FP-3
N-Channel
1 Channel
950 V
7.2 A
450 mOhms
30 V
3.5 V
43 nC
- 55 C
+ 150 C
30 W
Enhancement
Tube
MOSFETs HIGH POWER_NEW
IPW95R130PFD7XKSA1
Infineon Technologies
1:
6,10 €
613 Prieinamumas
„Mouser“ Dalies Nr.
726-IPW95R130PFD7XKS
Infineon Technologies
MOSFETs HIGH POWER_NEW
613 Prieinamumas
Pirkti
Min.: 1
Daugkart.: 1
Išsami Informacija
Si
Through Hole
TO-247-3
N-Channel
1 Channel
950 V
36.5 A
130 mOhms
20 V
2.5 V
141 nC
- 55 C
+ 150 C
227 W
Enhancement
Tube
MOSFETs HIGH POWER_NEW
IPB95R130PFD7ATMA1
Infineon Technologies
1:
6,48 €
1 189 Prieinamumas
2 000 Tikėtina 2026-11-30
„Mouser“ Dalies Nr.
726-IPB95R130PFD7ATM
Infineon Technologies
MOSFETs HIGH POWER_NEW
1 189 Prieinamumas
2 000 Tikėtina 2026-11-30
Pirkti
Min.: 1
Daugkart.: 1
Reel :
1 000
Išsami Informacija
Si
SMD/SMT
TO-263-3
N-Channel
1 Channel
950 V
36.5 A
130 mOhms
20 V
2.5 V
141 nC
- 55 C
+ 150 C
227 W
Enhancement
Reel, Cut Tape, MouseReel
MOSFETs LOW POWER_NEW
IPB95R450PFD7ATMA1
Infineon Technologies
1:
3,17 €
1 132 Prieinamumas
„Mouser“ Dalies Nr.
726-IPB95R450PFD7ATM
Infineon Technologies
MOSFETs LOW POWER_NEW
1 132 Prieinamumas
Pirkti
Min.: 1
Daugkart.: 1
Reel :
1 000
Išsami Informacija
Si
SMD/SMT
D2PAK-3 (TO-263-3)
N-Channel
1 Channel
950 V
13.3 A
450 mOhms
30 V
3.5 V
43 nC
- 55 C
+ 150 C
104 W
Enhancement
Reel, Cut Tape
MOSFETs LOW POWER_NEW
360°
+ 4 vaizdų
IPW95R310PFD7XKSA1
Infineon Technologies
1:
3,59 €
3 695 Prieinamumas
„Mouser“ Dalies Nr.
726-IPW95R310PFD7XKS
Infineon Technologies
MOSFETs LOW POWER_NEW
3 695 Prieinamumas
Pirkti
Min.: 1
Daugkart.: 1
Si
Through Hole
TO-247-3
N-Channel
1 Channel
950 V
17.5 A
310 mOhms
30 V
3.5 V
61 nC
- 55 C
+ 150 C
125 W
Enhancement
Tube
MOSFETs HIGH POWER_NEW
IPA95R130PFD7XKSA1
Infineon Technologies
1:
6,48 €
49 Prieinamumas
500 Pagal užsakymą
„Mouser“ Dalies Nr.
726-IPA95R130PFD7XKS
Infineon Technologies
MOSFETs HIGH POWER_NEW
49 Prieinamumas
500 Pagal užsakymą
Pirkti
Min.: 1
Daugkart.: 1
Si
Through Hole
TO-220FP-3
N-Channel
1 Channel
950 V
13.9 A
130 mOhms
30 V
3.5 V
141 nC
- 55 C
+ 150 C
33 W
Enhancement
Tube
MOSFETs LOW POWER_NEW
IPD95R450PFD7ATMA1
Infineon Technologies
1:
2,82 €
490 Prieinamumas
„Mouser“ Dalies Nr.
726-IPD95R450PFD7ATM
Infineon Technologies
MOSFETs LOW POWER_NEW
490 Prieinamumas
Pirkti
Min.: 1
Daugkart.: 1
Reel :
2 500
Si
SMD/SMT
DPAK-3 (TO-252-3)
N-Channel
1 Channel
950 V
13.3 A
450 mOhms
30 V
3.5 V
43 nC
- 55 C
+ 150 C
104 W
Enhancement
Reel, Cut Tape
MOSFETs LOW POWER_NEW
IPA95R310PFD7XKSA1
Infineon Technologies
1:
3,56 €
379 Prieinamumas
„Mouser“ Dalies Nr.
726-IPA95R310PFD7XKS
Infineon Technologies
MOSFETs LOW POWER_NEW
379 Prieinamumas
Pirkti
Min.: 1
Daugkart.: 1
Si
Through Hole
TO-220FP-3
N-Channel
1 Channel
950 V
8.7 A
310 mOhms
30 V
3.5 V
61 nC
- 55 C
+ 155 C
31 W
Enhancement
Tube