CoolSiC™ 1400V SiC G2 MOSFETs

Infineon Technologies CoolSiC™ 1400V Silicon Carbide (SiC) G2 MOSFETs are offered in a TO-247PLUS-4 reflow package. These Infineon MOSFETs are ideal for high-output power applications such as Electric Vehicle (EV) charging, Battery Energy Storage Systems (BESS), Commercial / Construction / Agricultural Vehicles (CAV), and more. The CoolSiC™ MOSFET G2 1400V technology is a cutting-edge technology offering improved thermal performance, increased power density, and enhanced reliability. The package features reflow capability (3x reflow soldering possible), enabling lower thermal resistance.

Results: 11
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Description Datasheet Availability Pricing (EUR) Filter the results in the table by unit price based on your quantity.
Qty. RoHS ECAD Model Mounting Style
Package/Case
Transistor Polarity
Number of Channels
Vds - Drain-Source Breakdown Voltage
Id - Continuous Drain Current
Rds On - Drain-Source Resistance
Vgs - Gate-Source Voltage
Vgs th - Gate-Source Threshold Voltage
Qg - Gate Charge
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Channel Mode
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Infineon Technologies SiC MOSFETs CoolSiC 1400 V SiC MOSFET G2 with .XT interconnection technology
Datasheet
152In Stock
Min.: 1
Mult.: 1

Through Hole TO-247-4 N-Channel 1 Channel 1.4 kV 92 A 53.8 mOhms - 10 V, + 23 V 4.2 V 78 nC - 55 C + 175 C 380 W Enhancement CoolSiC
Infineon Technologies SiC MOSFETs CoolSiC 1400 V SiC MOSFET G2 with .XT interconnection technology
Datasheet
358In Stock
480On Order
Min.: 1
Mult.: 1

Through Hole TO-247-4 N-Channel 1 Channel 1.4 kV 52 A 38 mOhms - 10 V, + 25 V 5.1 V 41 nC - 55 C + 175 C 242 W Enhancement CoolSiC
Infineon Technologies SiC MOSFETs CoolSiC 1400 V SiC MOSFET G2 with .XT interconnection technology
Datasheet
126In Stock
240Expected 6/17/2027
Min.: 1
Mult.: 1

Through Hole TO-247-4 N-Channel 1 Channel 1.4 kV 74 A 67.6 Ohms - 10 V, + 25 V 5.1 V 62 nC - 55 C + 175 C 330 W Enhancement CoolSiC
Infineon Technologies SiC MOSFETs CoolSiC 1400 V SiC MOSFET G2 with .XT interconnection technology
Datasheet
102In Stock
240Expected 7/29/2026
Min.: 1
Mult.: 1

Through Hole TO-247-4 N-Channel 1 Channel 1.4 kV 65 A 35 mOhms - 10 V, + 25 V 4.2 V 54 nC - 55 C + 175 C 288 W Enhancement CoolSiC
Infineon Technologies SiC MOSFETs CoolSiC MOSFET discrete 1400 V G2 in TO-247PLUS-4 Reflow package
Datasheet
575In Stock
Min.: 1
Mult.: 1

CoolSiC
Infineon Technologies SiC MOSFETs SIC DISCRETE
Datasheet
200In Stock
Min.: 1
Mult.: 1

CoolSiC
Infineon Technologies SiC MOSFETs SIC DISCRETE
Datasheet
224In Stock
Min.: 1
Mult.: 1

CoolSiC
Infineon Technologies SiC MOSFETs CoolSiC MOSFET discrete 1400 V G2 in TO-247PLUS-4 Reflow package
Datasheet
189In Stock
Min.: 1
Mult.: 1

CoolSiC
Infineon Technologies SiC MOSFETs SIC DISCRETE
Datasheet
230In Stock
Min.: 1
Mult.: 1

CoolSiC
Infineon Technologies SiC MOSFETs SIC DISCRETE
Datasheet
220In Stock
Min.: 1
Mult.: 1

CoolSiC
Infineon Technologies SiC MOSFETs CoolSiC 1400 V SiC MOSFET G2 : Silicon Carbide MOSFET
Datasheet
240Expected 7/31/2026
Min.: 1
Mult.: 1
: 240

Through Hole PG-TO247-4 N-Channel 1 Channel 1.4 kV 147 A 31.3 Ohms - 10 V to 25 V 4.2 V 130 nC - 55 C + 175 C 568 W Enhancement CoolSiC