|
|
Power Management IC Development Tools Half-Bridge Development Board, 150V/25A
- EPC90143
- EPC
-
1:
178,88 €
-
3Prieinamumas
-
"Mouser Naujiena"
|
„Mouser“ Dalies Nr.
65-EPC90143
"Mouser Naujiena"
|
EPC
|
Power Management IC Development Tools Half-Bridge Development Board, 150V/25A
|
|
3Prieinamumas
|
|
Min.: 1
Daugkart.: 1
|
|
|
|
|
GaN FET eGaN Enhancement Mode Power Transistor
- EPC2007C
- EPC
-
1:
2,84 €
-
2 470Prieinamumas
-
"Mouser Naujiena"
|
„Mouser“ Dalies Nr.
65-EPC2007C
"Mouser Naujiena"
|
EPC
|
GaN FET eGaN Enhancement Mode Power Transistor
|
|
2 470Prieinamumas
|
|
Min.: 1
Daugkart.: 1
|
|
|
|
|
Efficient Power Conversion
- EPC2015C
- EPC
-
1:
5,44 €
-
2 300Prieinamumas
-
"Mouser Naujiena"
|
„Mouser“ Dalies Nr.
65-EPC2015C
"Mouser Naujiena"
|
EPC
|
Efficient Power Conversion
|
|
2 300Prieinamumas
|
|
Min.: 1
Daugkart.: 1
|
|
|
|
|
GaN FET eGaN Enhancement Mode Power Transistor
- EPC2016C
- EPC
-
1:
3,28 €
-
1 629Prieinamumas
-
"Mouser Naujiena"
|
„Mouser“ Dalies Nr.
65-EPC2016C
"Mouser Naujiena"
|
EPC
|
GaN FET eGaN Enhancement Mode Power Transistor
|
|
1 629Prieinamumas
|
|
Min.: 1
Daugkart.: 1
|
|
|
|
|
GaN FET eGaN Enhancement Mode Power Transistor
- EPC2020
- EPC
-
1:
9,08 €
-
475Prieinamumas
-
"Mouser Naujiena"
|
„Mouser“ Dalies Nr.
65-EPC2020
"Mouser Naujiena"
|
EPC
|
GaN FET eGaN Enhancement Mode Power Transistor
|
|
475Prieinamumas
|
|
Min.: 1
Daugkart.: 1
|
|
|
|
|
GaN FET eGaN Enhancement Mode Power Transistor
- EPC2022
- EPC
-
1:
9,30 €
-
1 936Prieinamumas
-
"Mouser Naujiena"
|
„Mouser“ Dalies Nr.
65-EPC2022
"Mouser Naujiena"
|
EPC
|
GaN FET eGaN Enhancement Mode Power Transistor
|
|
1 936Prieinamumas
|
|
Min.: 1
Daugkart.: 1
|
|
|
|
|
GaN FET eGaN Enhancement Mode Power Transistor
- EPC2023
- EPC
-
1:
9,18 €
-
496Prieinamumas
-
"Mouser Naujiena"
|
„Mouser“ Dalies Nr.
65-EPC2023
"Mouser Naujiena"
|
EPC
|
GaN FET eGaN Enhancement Mode Power Transistor
|
|
496Prieinamumas
|
|
Min.: 1
Daugkart.: 1
|
|
|
|
|
GaN FET eGaN Enhancement Mode Power Transistor
- EPC2032
- EPC
-
1:
8,11 €
-
478Prieinamumas
-
"Mouser Naujiena"
|
„Mouser“ Dalies Nr.
65-EPC2032
"Mouser Naujiena"
|
EPC
|
GaN FET eGaN Enhancement Mode Power Transistor
|
|
478Prieinamumas
|
|
Min.: 1
Daugkart.: 1
|
|
|
|
|
Efficient Power Conversion
- EPC2033
- EPC
-
1:
10,34 €
-
300Prieinamumas
-
"Mouser Naujiena"
|
„Mouser“ Dalies Nr.
65-EPC2033
"Mouser Naujiena"
|
EPC
|
Efficient Power Conversion
|
|
300Prieinamumas
|
|
Min.: 1
Daugkart.: 1
|
|
|
|
|
GaN FET eGaN Enhancement Mode Power Transistor
- EPC2039
- EPC
-
1:
2,18 €
-
2 500Prieinamumas
-
"Mouser Naujiena"
|
„Mouser“ Dalies Nr.
65-EPC2039
"Mouser Naujiena"
|
EPC
|
GaN FET eGaN Enhancement Mode Power Transistor
|
|
2 500Prieinamumas
|
|
Min.: 1
Daugkart.: 1
|
|
|
|
|
GaN FET eGaN Enhancement Mode Power Transistor
- EPC2053
- EPC
-
1:
7,15 €
-
2 498Prieinamumas
-
"Mouser Naujiena"
|
„Mouser“ Dalies Nr.
65-EPC2053
"Mouser Naujiena"
|
EPC
|
GaN FET eGaN Enhancement Mode Power Transistor
|
|
2 498Prieinamumas
|
|
Min.: 1
Daugkart.: 1
|
|
|
|
|
GaN FET eGaN Enhancement Mode Power Transistor
- EPC2212
- EPC
-
1:
3,75 €
-
2 137Prieinamumas
-
"Mouser Naujiena"
|
„Mouser“ Dalies Nr.
65-EPC2212
"Mouser Naujiena"
|
EPC
|
GaN FET eGaN Enhancement Mode Power Transistor
|
|
2 137Prieinamumas
|
|
Min.: 1
Daugkart.: 1
|
|
|
|
|
GaN FET eGaN Enhancement Mode Power Transistor
- EPC2218
- EPC
-
1:
7,05 €
-
1 444Prieinamumas
-
"Mouser Naujiena"
|
„Mouser“ Dalies Nr.
65-EPC2218
"Mouser Naujiena"
|
EPC
|
GaN FET eGaN Enhancement Mode Power Transistor
|
|
1 444Prieinamumas
|
|
Min.: 1
Daugkart.: 1
|
|
|
|
|
Power Management IC Development Tools Half-Bridge Development Board, 100V/40A
- EPC90133
- EPC
-
1:
178,88 €
-
19Prieinamumas
-
"Mouser Naujiena"
|
„Mouser“ Dalies Nr.
65-EPC90133
"Mouser Naujiena"
|
EPC
|
Power Management IC Development Tools Half-Bridge Development Board, 100V/40A
|
|
19Prieinamumas
|
|
Min.: 1
Daugkart.: 1
|
|
|
|
|
Power Management IC Development Tools Half-Bridge Development Board, 60V/20A
- EPC9038
- EPC
-
1:
178,88 €
-
10Prieinamumas
-
"Mouser Naujiena"
|
„Mouser“ Dalies Nr.
65-EPC9038
"Mouser Naujiena"
|
EPC
|
Power Management IC Development Tools Half-Bridge Development Board, 60V/20A
|
|
10Prieinamumas
|
|
Min.: 1
Daugkart.: 1
|
|
|
|
|
Power Management IC Development Tools Half-Bridge Development Board, 80V/17A
- EPC9039
- EPC
-
1:
178,88 €
-
10Prieinamumas
-
"Mouser Naujiena"
|
„Mouser“ Dalies Nr.
65-EPC9039
"Mouser Naujiena"
|
EPC
|
Power Management IC Development Tools Half-Bridge Development Board, 80V/17A
|
|
10Prieinamumas
|
|
Min.: 1
Daugkart.: 1
|
|
|
|
|
Power Management IC Development Tools Half-Bridge Development Board, 100V/15A
- EPC9040
- EPC
-
1:
178,88 €
-
7Prieinamumas
-
"Mouser Naujiena"
|
„Mouser“ Dalies Nr.
65-EPC9040
"Mouser Naujiena"
|
EPC
|
Power Management IC Development Tools Half-Bridge Development Board, 100V/15A
|
|
7Prieinamumas
|
|
Min.: 1
Daugkart.: 1
|
|
|
|
|
Power Management IC Development Tools 2 kW 48 V/14 V Bi-directional Power Module
- EPC9165KIT
- EPC
-
1:
726,70 €
-
2Prieinamumas
-
"Mouser Naujiena"
|
„Mouser“ Dalies Nr.
65-EPC9165KIT
"Mouser Naujiena"
|
EPC
|
Power Management IC Development Tools 2 kW 48 V/14 V Bi-directional Power Module
|
|
2Prieinamumas
|
|
Min.: 1
Daugkart.: 1
|
|
|
|
|
Gate Tvarkyklės 80 V Half-Bridge Gate Driver for eGaN FETs
- UP1966E
- EPC
-
1:
2,02 €
-
2 972Prieinamumas
-
"Mouser Naujiena"
|
„Mouser“ Dalies Nr.
65-UP1966E
"Mouser Naujiena"
|
EPC
|
Gate Tvarkyklės 80 V Half-Bridge Gate Driver for eGaN FETs
|
|
2 972Prieinamumas
|
|
Min.: 1
Daugkart.: 1
|
|
|
|
|
Maitinimo Jungiklių Integriniai Grandynai - Maitinimo Paskirstymas EPC Bi-directional eGaN Power Switch,100 V, 45 milliohm at 5 V, BGA 0.9 x 0.95
- EPC2121
- EPC
-
1:
1,08 €
-
1 896Prieinamumas
-
"Mouser Naujiena"
|
„Mouser“ Dalies Nr.
65-EPC2121
"Mouser Naujiena"
|
EPC
|
Maitinimo Jungiklių Integriniai Grandynai - Maitinimo Paskirstymas EPC Bi-directional eGaN Power Switch,100 V, 45 milliohm at 5 V, BGA 0.9 x 0.95
|
|
1 896Prieinamumas
|
|
Min.: 1
Daugkart.: 1
:
2 500
|
|
|
|
|
GaN FET EPC eGaN FET, 200 V, 5 milliohm at 5 V, 3 mm x 5 mm FCQFN
- EPC2304
- EPC
-
1:
7,78 €
-
34Prieinamumas
-
24 000Pagal užsakymą
-
"Mouser Naujiena"
|
„Mouser“ Dalies Nr.
65-EPC2304
"Mouser Naujiena"
|
EPC
|
GaN FET EPC eGaN FET, 200 V, 5 milliohm at 5 V, 3 mm x 5 mm FCQFN
|
|
34Prieinamumas
24 000Pagal užsakymą
Turime sandėlyje:
34 Galime išsiųsti iš karto
Pagal užsakymą:
15 000 Tikėtina 2027-08-20
9 000 Tikėtina 2027-12-21
Gamintojo numatytas pristatymo laikas
58 Savaičių
|
|
Min.: 1
Daugkart.: 1
:
3 000
|
|
|
|
|
GaN FET EPC eGaN FET,200 V, 10 milliohm at 5 V, 3 mm x 5 mm QFN
- EPC2307
- EPC
-
1:
4,69 €
-
67Prieinamumas
-
9 000Tikėtina 2027-02-16
-
"Mouser Naujiena"
|
„Mouser“ Dalies Nr.
65-EPC2307
"Mouser Naujiena"
|
EPC
|
GaN FET EPC eGaN FET,200 V, 10 milliohm at 5 V, 3 mm x 5 mm QFN
|
|
67Prieinamumas
9 000Tikėtina 2027-02-16
|
|
Min.: 1
Daugkart.: 1
:
3 000
|
|
|
|
|
Power Management IC Development Tools Half-Bridge Development Board, 100V/65A
- EPC90156
- EPC
-
1:
178,88 €
-
2Prieinamumas
-
20Tikėtina 2027-05-21
-
"Mouser Naujiena"
|
„Mouser“ Dalies Nr.
65-EPC90156
"Mouser Naujiena"
|
EPC
|
Power Management IC Development Tools Half-Bridge Development Board, 100V/65A
|
|
2Prieinamumas
20Tikėtina 2027-05-21
|
|
Min.: 1
Daugkart.: 1
|
|
|
|
|
GaN FET eGaN Enhancement Mode Power Transistor
- EPC2001C
- EPC
-
1:
5,83 €
-
2 012Prieinamumas
-
"Mouser Naujiena"
|
„Mouser“ Dalies Nr.
65-EPC2001C
"Mouser Naujiena"
|
EPC
|
GaN FET eGaN Enhancement Mode Power Transistor
|
|
2 012Prieinamumas
|
|
Min.: 1
Daugkart.: 1
|
|
|
|
|
GaN FET EPC eGaN FET,40 V, 16 milliohm at 5 V, LGA 1.7 x 1.1
- EPC2014C
- EPC
-
1:
2,03 €
-
16 053Prieinamumas
-
"Mouser Naujiena"
|
„Mouser“ Dalies Nr.
65-EPC2014C
"Mouser Naujiena"
|
EPC
|
GaN FET EPC eGaN FET,40 V, 16 milliohm at 5 V, LGA 1.7 x 1.1
|
|
16 053Prieinamumas
|
|
Min.: 1
Daugkart.: 1
:
2 500
|
|
|