|
|
SCHOTTKY Diodes ir Lygintuvai Rectifier, TMBS Schottky, 10A, 100V, ultra-low VF, DFN6546A
- V10N6M103-M3/I
- Vishay Semiconductors
-
1:
1,16 €
-
4 186Prieinamumas
-
Naujas Produktas
|
„Mouser“ Dalies Nr.
78-V10N6M103-M3/I
Naujas Produktas
|
Vishay Semiconductors
|
SCHOTTKY Diodes ir Lygintuvai Rectifier, TMBS Schottky, 10A, 100V, ultra-low VF, DFN6546A
|
|
4 186Prieinamumas
|
|
Min.: 1
Daugkart.: 1
:
6 000
|
|
|
|
|
SCHOTTKY Diodes ir Lygintuvai Rectifier, TMBS Schottky, 10A, 200V, ultra-low VF, DFN6546A
- V10N6202-M3/I
- Vishay Semiconductors
-
1:
1,29 €
-
4 200Prieinamumas
-
Naujas Produktas
|
„Mouser“ Dalies Nr.
78-V10N6202-M3/I
Naujas Produktas
|
Vishay Semiconductors
|
SCHOTTKY Diodes ir Lygintuvai Rectifier, TMBS Schottky, 10A, 200V, ultra-low VF, DFN6546A
|
|
4 200Prieinamumas
|
|
Min.: 1
Daugkart.: 1
:
6 000
|
|
|
|
|
SCHOTTKY Diodes ir Lygintuvai Rectifier, TMBS Schottky, 10A, 100V, ultra-low VF, DFN6546A
- V10N6103-M3/I
- Vishay Semiconductors
-
1:
1,16 €
-
4 200Prieinamumas
-
Naujas Produktas
|
„Mouser“ Dalies Nr.
78-V10N6103-M3/I
Naujas Produktas
|
Vishay Semiconductors
|
SCHOTTKY Diodes ir Lygintuvai Rectifier, TMBS Schottky, 10A, 100V, ultra-low VF, DFN6546A
|
|
4 200Prieinamumas
|
|
Min.: 1
Daugkart.: 1
:
6 000
|
|
|
|
|
SCHOTTKY Diodes ir Lygintuvai Schottky Barrier Diode (AEC-Q101 Qualified)
- RB088T-30HZC9
- ROHM Semiconductor
-
1:
2,07 €
-
1 996Prieinamumas
|
„Mouser“ Dalies Nr.
755-RB088T-30HZC9
|
ROHM Semiconductor
|
SCHOTTKY Diodes ir Lygintuvai Schottky Barrier Diode (AEC-Q101 Qualified)
|
|
1 996Prieinamumas
|
|
Min.: 1
Daugkart.: 1
|
|
|
|
|
SiC SCHOTTKY diodai RECT 650V 10A SM POWER SIC
- VS-3C10ET07S2L-M3
- Vishay Semiconductors
-
1:
4,02 €
-
2 929Prieinamumas
|
„Mouser“ Dalies Nr.
78-VS-3C10ET07S2L-M3
|
Vishay Semiconductors
|
SiC SCHOTTKY diodai RECT 650V 10A SM POWER SIC
|
|
2 929Prieinamumas
|
|
Min.: 1
Daugkart.: 1
:
800
|
|
|
|
|
SCHOTTKY Diodes ir Lygintuvai Schottky Barrier Diode (AEC-Q101 Qualified)
- RB088T150HZC9
- ROHM Semiconductor
-
1:
2,43 €
-
1 961Prieinamumas
|
„Mouser“ Dalies Nr.
755-RB088T150HZC9
|
ROHM Semiconductor
|
SCHOTTKY Diodes ir Lygintuvai Schottky Barrier Diode (AEC-Q101 Qualified)
|
|
1 961Prieinamumas
|
|
Min.: 1
Daugkart.: 1
|
|
|
|
|
SiC SCHOTTKY diodai RECT 650V 10A RDL POWER SIC
- VS-3C10ET07T-M3
- Vishay Semiconductors
-
1:
3,85 €
-
1 399Prieinamumas
|
„Mouser“ Dalies Nr.
78-VS-3C10ET07T-M3
|
Vishay Semiconductors
|
SiC SCHOTTKY diodai RECT 650V 10A RDL POWER SIC
|
|
1 399Prieinamumas
|
|
Min.: 1
Daugkart.: 1
|
|
|
|
|
SiC SCHOTTKY diodai 1200V 10A AUTO SIC SBD
- FFSH10120A-F085
- onsemi
-
1:
8,68 €
-
3 444Prieinamumas
|
„Mouser“ Dalies Nr.
863-FFSH10120A-F085
|
onsemi
|
SiC SCHOTTKY diodai 1200V 10A AUTO SIC SBD
|
|
3 444Prieinamumas
|
|
Min.: 1
Daugkart.: 1
|
|
|
|
|
SCHOTTKY Diodes ir Lygintuvai 100V 10A
- DST10100S
- Littelfuse
-
1:
1,94 €
-
33 786Prieinamumas
|
„Mouser“ Dalies Nr.
576-DST10100S
|
Littelfuse
|
SCHOTTKY Diodes ir Lygintuvai 100V 10A
|
|
33 786Prieinamumas
|
|
Min.: 1
Daugkart.: 1
:
5 000
|
|
|
|
|
SiC SCHOTTKY diodai SIC DIODES
- IDL10G65C5XUMA2
- Infineon Technologies
-
1:
3,87 €
-
8 081Prieinamumas
|
„Mouser“ Dalies Nr.
726-IDL10G65C5XUMA2
|
Infineon Technologies
|
SiC SCHOTTKY diodai SIC DIODES
|
|
8 081Prieinamumas
|
|
Min.: 1
Daugkart.: 1
:
3 000
|
|
|
|
|
SCHOTTKY Diodes ir Lygintuvai 10 Amp 120V Schottky Rectifier
- FSV10120V
- onsemi
-
1:
1,41 €
-
173 760Prieinamumas
|
„Mouser“ Dalies Nr.
512-FSV10120V
|
onsemi
|
SCHOTTKY Diodes ir Lygintuvai 10 Amp 120V Schottky Rectifier
|
|
173 760Prieinamumas
|
|
Min.: 1
Daugkart.: 1
:
5 000
|
|
|
|
|
SCHOTTKY Diodes ir Lygintuvai 10Amp 150V Ultra-Low VFschottky rectifier
- FSV10150V
- onsemi
-
1:
1,09 €
-
106 688Prieinamumas
|
„Mouser“ Dalies Nr.
512-FSV10150V
|
onsemi
|
SCHOTTKY Diodes ir Lygintuvai 10Amp 150V Ultra-Low VFschottky rectifier
|
|
106 688Prieinamumas
|
|
Min.: 1
Daugkart.: 1
:
5 000
|
|
|
|
|
Lygintuvai SMC Package,Surface Mount Rectifier(10A/1000V),AEC-Q101 qualified
- S10MC-AU_R1_006A1
- Panjit
-
1:
0,998 €
-
2 298Prieinamumas
|
„Mouser“ Dalies Nr.
241-S10MC-AU_R1006A1
|
Panjit
|
Lygintuvai SMC Package,Surface Mount Rectifier(10A/1000V),AEC-Q101 qualified
|
|
2 298Prieinamumas
|
|
Min.: 1
Daugkart.: 1
:
800
|
|
|
|
|
Tilteliniai lygintuvai Glass Passivated Low Profile Bridge Rectifier 600V, 10A
- KBJB1006_T0_00301
- Panjit
-
1:
1,64 €
-
1 285Prieinamumas
|
„Mouser“ Dalies Nr.
241-KBJB106T00301
|
Panjit
|
Tilteliniai lygintuvai Glass Passivated Low Profile Bridge Rectifier 600V, 10A
|
|
1 285Prieinamumas
|
|
Min.: 1
Daugkart.: 1
|
|
|
|
|
Tilteliniai lygintuvai Glass Passivated Low Profile Bridge Rectifier 800V, 10A
- KBJB1008_T0_00301
- Panjit
-
1:
1,64 €
-
1 513Prieinamumas
|
„Mouser“ Dalies Nr.
241-KBJB108T00301
|
Panjit
|
Tilteliniai lygintuvai Glass Passivated Low Profile Bridge Rectifier 800V, 10A
|
|
1 513Prieinamumas
|
|
Min.: 1
Daugkart.: 1
|
|
|
|
|
SCHOTTKY Diodes ir Lygintuvai Schottky Barrier Diode (AEC-Q101 Qualified)
- RB085T-90HZC9
- ROHM Semiconductor
-
1:
2,31 €
-
1 880Prieinamumas
|
„Mouser“ Dalies Nr.
755-RB085T-90HZC9
|
ROHM Semiconductor
|
SCHOTTKY Diodes ir Lygintuvai Schottky Barrier Diode (AEC-Q101 Qualified)
|
|
1 880Prieinamumas
|
|
Min.: 1
Daugkart.: 1
|
|
|
|
|
SCHOTTKY Diodes ir Lygintuvai Schottky Barrier Diode (AEC-Q101 Qualified)
- RB088T-60HZC9
- ROHM Semiconductor
-
1:
2,18 €
-
1 982Prieinamumas
|
„Mouser“ Dalies Nr.
755-RB088T-60HZC9
|
ROHM Semiconductor
|
SCHOTTKY Diodes ir Lygintuvai Schottky Barrier Diode (AEC-Q101 Qualified)
|
|
1 982Prieinamumas
|
|
Min.: 1
Daugkart.: 1
|
|
|
|
|
SCHOTTKY Diodes ir Lygintuvai Schottky Barrier Diode (AEC-Q101 Qualified)
- RB088T-40HZC9
- ROHM Semiconductor
-
1:
2,12 €
-
1 985Prieinamumas
|
„Mouser“ Dalies Nr.
755-RB088T-40HZC9
|
ROHM Semiconductor
|
SCHOTTKY Diodes ir Lygintuvai Schottky Barrier Diode (AEC-Q101 Qualified)
|
|
1 985Prieinamumas
|
|
Min.: 1
Daugkart.: 1
|
|
|
|
|
SCHOTTKY Diodes ir Lygintuvai 10 Amp 60 Volt 280 Amp IFSM
- SS10P6-M3/87A
- Vishay Semiconductors
-
1:
1,32 €
-
6 500Prieinamumas
|
„Mouser“ Dalies Nr.
625-SS10P6-M3/87A
|
Vishay Semiconductors
|
SCHOTTKY Diodes ir Lygintuvai 10 Amp 60 Volt 280 Amp IFSM
|
|
6 500Prieinamumas
|
|
Min.: 1
Daugkart.: 1
:
6 500
|
|
|
|
|
SCHOTTKY Diodes ir Lygintuvai 150V Vr 10A Io SBD TO-263S(D2PAK) 5A
- RB088NS150FHTL
- ROHM Semiconductor
-
1:
1,75 €
-
2 875Prieinamumas
|
„Mouser“ Dalies Nr.
755-RB088NS150FHTL
|
ROHM Semiconductor
|
SCHOTTKY Diodes ir Lygintuvai 150V Vr 10A Io SBD TO-263S(D2PAK) 5A
|
|
2 875Prieinamumas
|
|
Min.: 1
Daugkart.: 1
:
1 000
|
|
|
|
|
Lygintuvai RECT 350V 10A SM SUPER FST
- RFN10NS3STL
- ROHM Semiconductor
-
1:
2,24 €
-
1 850Prieinamumas
|
„Mouser“ Dalies Nr.
755-RFN10NS3STL
|
ROHM Semiconductor
|
Lygintuvai RECT 350V 10A SM SUPER FST
|
|
1 850Prieinamumas
|
|
Min.: 1
Daugkart.: 1
:
1 000
|
|
|
|
|
Lygintuvai 10A, 600V SMC AEC-Q101 Qualified
- S10CJHM3/I
- Vishay Semiconductors
-
1:
1,43 €
-
33 269Prieinamumas
|
„Mouser“ Dalies Nr.
78-S10CJHM3/I
|
Vishay Semiconductors
|
Lygintuvai 10A, 600V SMC AEC-Q101 Qualified
|
|
33 269Prieinamumas
|
|
Min.: 1
Daugkart.: 1
:
3 500
|
|
|
|
|
SCHOTTKY Diodes ir Lygintuvai 10A,80V,Trench
- VBT1080S-E3/8W
- Vishay Semiconductors
-
1:
1,81 €
-
8 000Prieinamumas
|
„Mouser“ Dalies Nr.
625-VBT1080S-E3/8W
|
Vishay Semiconductors
|
SCHOTTKY Diodes ir Lygintuvai 10A,80V,Trench
|
|
8 000Prieinamumas
|
|
Min.: 1
Daugkart.: 1
:
800
|
|
|
|
|
Lygintuvai Fast Recvry 600V Vr TO-252(DPAK) 10A Io
- RFN10BM6SFHTL
- ROHM Semiconductor
-
1:
1,88 €
-
3 205Prieinamumas
|
„Mouser“ Dalies Nr.
755-RFN10BM6SFHTL
|
ROHM Semiconductor
|
Lygintuvai Fast Recvry 600V Vr TO-252(DPAK) 10A Io
|
|
3 205Prieinamumas
|
|
Min.: 1
Daugkart.: 1
:
2 500
|
|
|
|
|
Lygintuvai RECT 800V 10A SM SUPER FST
- RFN10NS8DFHTL
- ROHM Semiconductor
-
1:
3,31 €
-
1 329Prieinamumas
|
„Mouser“ Dalies Nr.
755-RFN10NS8DFHTL
|
ROHM Semiconductor
|
Lygintuvai RECT 800V 10A SM SUPER FST
|
|
1 329Prieinamumas
|
|
Min.: 1
Daugkart.: 1
:
1 000
|
|
|