|
|
MOSFET moduliai 500V 112A 0.039Ohm PolarP3 Power MOSFET
- IXFN132N50P3
- IXYS
-
1:
43,51 €
-
415Prieinamumas
|
„Mouser“ Dalies Nr.
747-IXFN132N50P3
|
IXYS
|
MOSFET moduliai 500V 112A 0.039Ohm PolarP3 Power MOSFET
|
|
415Prieinamumas
|
|
Min.: 1
Daugkart.: 1
|
|
|
|
|
MOSFETs P-CHANNEL 60 V
- SQ9407EY-T1_BE3
- Vishay Semiconductors
-
1:
1,58 €
-
71 206Prieinamumas
|
„Mouser“ Dalies Nr.
78-SQ9407EY-T1_BE3
|
Vishay Semiconductors
|
MOSFETs P-CHANNEL 60 V
|
|
71 206Prieinamumas
|
|
|
1,58 €
|
|
|
1,01 €
|
|
|
0,673 €
|
|
|
0,531 €
|
|
|
0,481 €
|
|
|
0,42 €
|
|
Min.: 1
Daugkart.: 1
:
2 500
|
|
|
|
|
MOSFETs Dual N-Ch 40V AEC-Q101 Qualified
- SQJ868EP-T1_GE3
- Vishay / Siliconix
-
1:
1,69 €
-
50 752Prieinamumas
|
„Mouser“ Dalies Nr.
78-SQJ868EP-T1_GE3
|
Vishay / Siliconix
|
MOSFETs Dual N-Ch 40V AEC-Q101 Qualified
|
|
50 752Prieinamumas
|
|
|
1,69 €
|
|
|
1,05 €
|
|
|
0,689 €
|
|
|
0,541 €
|
|
|
0,42 €
|
|
|
Peržiūrėti
|
|
|
0,463 €
|
|
|
0,372 €
|
|
|
0,359 €
|
|
|
0,349 €
|
|
Min.: 1
Daugkart.: 1
:
3 000
|
|
|
|
|
MOSFETs 60V 50A 136W AEC-Q101 Qualified
- SQD50N06-09L_GE3
- Vishay Semiconductors
-
1:
5,38 €
-
32 037Prieinamumas
|
„Mouser“ Dalies Nr.
781-SQD50N06-09L_GE3
|
Vishay Semiconductors
|
MOSFETs 60V 50A 136W AEC-Q101 Qualified
|
|
32 037Prieinamumas
|
|
|
5,38 €
|
|
|
3,59 €
|
|
|
2,59 €
|
|
|
2,38 €
|
|
|
2,23 €
|
|
|
2,23 €
|
|
Min.: 1
Daugkart.: 1
:
2 000
|
|
|
|
|
MOSFETs 80V 4.8mOhm@10V 60A N-Ch MV T-FET
- SIR826DP-T1-GE3
- Vishay Semiconductors
-
1:
3,34 €
-
12 149Prieinamumas
|
„Mouser“ Dalies Nr.
78-SIR826DP-T1-GE3
|
Vishay Semiconductors
|
MOSFETs 80V 4.8mOhm@10V 60A N-Ch MV T-FET
|
|
12 149Prieinamumas
|
|
|
3,34 €
|
|
|
2,18 €
|
|
|
1,53 €
|
|
|
1,26 €
|
|
|
1,17 €
|
|
Min.: 1
Daugkart.: 1
Maks.: 3 000
:
3 000
|
|
|
|
|
MOSFETs Dual P-Chnl 30-V D-S AEC-Q101 Qualified
- SQ4949EY-T1_GE3
- Vishay Semiconductors
-
1:
2,15 €
-
31 294Prieinamumas
|
„Mouser“ Dalies Nr.
78-SQ4949EY-T1_GE3
|
Vishay Semiconductors
|
MOSFETs Dual P-Chnl 30-V D-S AEC-Q101 Qualified
|
|
31 294Prieinamumas
|
|
|
2,15 €
|
|
|
1,38 €
|
|
|
0,946 €
|
|
|
0,752 €
|
|
|
0,691 €
|
|
|
0,64 €
|
|
Min.: 1
Daugkart.: 1
:
2 500
|
|
|
|
|
MOSFETs 60V 8A 39W AEC-Q101 Qualified
- SQS460EN-T1_GE3
- Vishay / Siliconix
-
1:
1,69 €
-
67 719Prieinamumas
|
„Mouser“ Dalies Nr.
78-SQS460EN-T1_GE3
|
Vishay / Siliconix
|
MOSFETs 60V 8A 39W AEC-Q101 Qualified
|
|
67 719Prieinamumas
|
|
|
1,69 €
|
|
|
1,08 €
|
|
|
0,72 €
|
|
|
0,569 €
|
|
|
0,459 €
|
|
|
Peržiūrėti
|
|
|
0,521 €
|
|
|
0,458 €
|
|
Min.: 1
Daugkart.: 1
:
3 000
|
|
|
|
|
SiC MOSFET SIC MOS TO247-3L 160MOHM 1200V
- NVHL160N120SC1
- onsemi
-
1:
11,65 €
-
2 423Prieinamumas
|
„Mouser“ Dalies Nr.
863-NVHL160N120SC1
|
onsemi
|
SiC MOSFET SIC MOS TO247-3L 160MOHM 1200V
|
|
2 423Prieinamumas
|
|
Min.: 1
Daugkart.: 1
|
|
|
|
|
MOSFETs 70V P-Ch Enh FET 160Vgs 10V 250mOhm
- ZXMP7A17GQTA
- Diodes Incorporated
-
1:
1,29 €
-
18 116Prieinamumas
|
„Mouser“ Dalies Nr.
621-ZXMP7A17GQTA
|
Diodes Incorporated
|
MOSFETs 70V P-Ch Enh FET 160Vgs 10V 250mOhm
|
|
18 116Prieinamumas
|
|
|
1,29 €
|
|
|
0,744 €
|
|
|
0,521 €
|
|
|
0,521 €
|
|
Min.: 1
Daugkart.: 1
Maks.: 400
:
1 000
|
|
|
|
|
MOSFETs N-Ch 550V 23A D2PAK-2 CoolMOS CP
- IPB50R140CP
- Infineon Technologies
-
1:
4,72 €
-
1 709Prieinamumas
|
„Mouser“ Dalies Nr.
726-IPB50R140CP
|
Infineon Technologies
|
MOSFETs N-Ch 550V 23A D2PAK-2 CoolMOS CP
|
|
1 709Prieinamumas
|
|
|
4,72 €
|
|
|
3,10 €
|
|
|
2,30 €
|
|
|
1,94 €
|
|
|
1,79 €
|
|
|
1,68 €
|
|
Min.: 1
Daugkart.: 1
:
1 000
|
|
|
|
|
MOSFETs 40V Vds; +/-20V Vgs PowerPAK SO-8L
- SQJA76EP-T1_GE3
- Vishay Semiconductors
-
1:
1,84 €
-
3 425Prieinamumas
|
„Mouser“ Dalies Nr.
78-SQJA76EP-T1_GE3
|
Vishay Semiconductors
|
MOSFETs 40V Vds; +/-20V Vgs PowerPAK SO-8L
|
|
3 425Prieinamumas
|
|
|
1,84 €
|
|
|
1,18 €
|
|
|
0,796 €
|
|
|
0,631 €
|
|
|
0,579 €
|
|
|
0,519 €
|
|
Min.: 1
Daugkart.: 1
:
3 000
|
|
|
|
|
Gate Tvarkyklės Hi Vtg Hi-Side & Lo- Side Gate Dvr A 595 A 595-LM25101ASDX-1NPB
- LM25101ASD-1/NOPB
- Texas Instruments
-
1:
4,31 €
-
1 014Prieinamumas
|
„Mouser“ Dalies Nr.
595-LM25101ASD-1NPB
|
Texas Instruments
|
Gate Tvarkyklės Hi Vtg Hi-Side & Lo- Side Gate Dvr A 595 A 595-LM25101ASDX-1NPB
|
|
1 014Prieinamumas
|
|
|
4,31 €
|
|
|
3,29 €
|
|
|
3,03 €
|
|
|
2,74 €
|
|
|
2,38 €
|
|
|
Peržiūrėti
|
|
|
2,61 €
|
|
|
2,30 €
|
|
Min.: 1
Daugkart.: 1
:
1 000
|
|
|
|
|
Gate Tvarkyklės Sgl 7.6A Peak Currnt Lo-Side Gate Dvr A A 595-5114AMFXS7003103
- LM5114AMF/S7003109
- Texas Instruments
-
1:
1,61 €
-
2 879Prieinamumas
|
„Mouser“ Dalies Nr.
595-M5114AMFS7003109
|
Texas Instruments
|
Gate Tvarkyklės Sgl 7.6A Peak Currnt Lo-Side Gate Dvr A A 595-5114AMFXS7003103
|
|
2 879Prieinamumas
|
|
|
1,61 €
|
|
|
1,33 €
|
|
|
1,21 €
|
|
|
1,08 €
|
|
|
Peržiūrėti
|
|
|
0,877 €
|
|
|
1,02 €
|
|
|
0,98 €
|
|
|
0,877 €
|
|
Min.: 1
Daugkart.: 1
:
1 000
|
|
|
|
|
Gate Tvarkyklės Hi-Spd Ultrasound
- MD1711FG-G
- Microchip Technology
-
1:
10,44 €
-
187Prieinamumas
|
„Mouser“ Dalies Nr.
689-MD1711FG-G
|
Microchip Technology
|
Gate Tvarkyklės Hi-Spd Ultrasound
|
|
187Prieinamumas
|
|
Min.: 1
Daugkart.: 1
|
|
|
|
|
MOSFETs N-Ch 60V 100A D2PAK-2
- IPB026N06N
- Infineon Technologies
-
1:
3,93 €
-
1 033Prieinamumas
|
„Mouser“ Dalies Nr.
726-IPB026N06N
|
Infineon Technologies
|
MOSFETs N-Ch 60V 100A D2PAK-2
|
|
1 033Prieinamumas
|
|
|
3,93 €
|
|
|
2,58 €
|
|
|
1,92 €
|
|
|
1,62 €
|
|
|
1,47 €
|
|
|
Peržiūrėti
|
|
|
1,40 €
|
|
|
1,39 €
|
|
Min.: 1
Daugkart.: 1
:
1 000
|
|
|
|
|
MOSFETs N-Ch 60V 100A D2PAK-2
- IPB026N06NATMA1
- Infineon Technologies
-
1:
3,81 €
-
1 560Prieinamumas
|
„Mouser“ Dalies Nr.
726-IPB026N06NATMA1
|
Infineon Technologies
|
MOSFETs N-Ch 60V 100A D2PAK-2
|
|
1 560Prieinamumas
|
|
|
3,81 €
|
|
|
2,51 €
|
|
|
1,77 €
|
|
|
1,50 €
|
|
|
1,40 €
|
|
Min.: 1
Daugkart.: 1
:
1 000
|
|
|
|
|
Optiškai Izoliuotos Gate Tvarkyklės Gate Drive Coupler; 125C oper temp; R2R; SO6L; RoHS; VDE
- TLP5754H(D4TP4,E
- Toshiba
-
1:
1,57 €
-
5 302Prieinamumas
|
„Mouser“ Dalies Nr.
757-TLP5754HD4TP4E
|
Toshiba
|
Optiškai Izoliuotos Gate Tvarkyklės Gate Drive Coupler; 125C oper temp; R2R; SO6L; RoHS; VDE
|
|
5 302Prieinamumas
|
|
|
1,57 €
|
|
|
1,16 €
|
|
|
1,05 €
|
|
|
0,937 €
|
|
|
0,789 €
|
|
|
Peržiūrėti
|
|
|
0,877 €
|
|
|
0,845 €
|
|
|
0,84 €
|
|
|
0,786 €
|
|
Min.: 1
Daugkart.: 1
:
1 500
|
|
|
|
|
MOSFETs MOSFET
- IPD50N06S4L08ATMA2
- Infineon Technologies
-
1:
1,70 €
-
9 137Prieinamumas
|
„Mouser“ Dalies Nr.
726-IPD50N06S4L08ATM
|
Infineon Technologies
|
MOSFETs MOSFET
|
|
9 137Prieinamumas
|
|
|
1,70 €
|
|
|
1,08 €
|
|
|
0,728 €
|
|
|
0,575 €
|
|
|
0,527 €
|
|
|
0,469 €
|
|
Min.: 1
Daugkart.: 1
:
2 500
|
|
|
|
|
Gate Tvarkyklės Synchronous buck FET driver for high-fre A 595-TPS59603QDSGRQ1
- TPS59603QDSGTQ1
- Texas Instruments
-
1:
3,84 €
-
2 495Prieinamumas
|
„Mouser“ Dalies Nr.
595-TPS59603QDSGTQ1
|
Texas Instruments
|
Gate Tvarkyklės Synchronous buck FET driver for high-fre A 595-TPS59603QDSGRQ1
|
|
2 495Prieinamumas
|
|
|
3,84 €
|
|
|
2,91 €
|
|
|
2,67 €
|
|
|
2,43 €
|
|
|
2,10 €
|
|
|
Peržiūrėti
|
|
|
2,08 €
|
|
|
2,03 €
|
|
Min.: 1
Daugkart.: 1
:
250
|
|
|
|
|
MOSFETs N-Ch DTMOSV 600V 60W 380pF 7.0A
- TK560P60Y,RQ
- Toshiba
-
1:
1,85 €
-
1 900Prieinamumas
|
„Mouser“ Dalies Nr.
757-TK560P60YRQ
|
Toshiba
|
MOSFETs N-Ch DTMOSV 600V 60W 380pF 7.0A
|
|
1 900Prieinamumas
|
|
|
1,85 €
|
|
|
1,19 €
|
|
|
0,80 €
|
|
|
0,756 €
|
|
|
0,756 €
|
|
Min.: 1
Daugkart.: 1
:
2 000
|
|
|
|
|
Optiškai Izoliuotos Gate Tvarkyklės Photocoupler, Photo IC Output
- TLP5754(D4-TP,E
- Toshiba
-
1:
2,54 €
-
1 831Prieinamumas
|
„Mouser“ Dalies Nr.
757-TLP5754D4TPE
|
Toshiba
|
Optiškai Izoliuotos Gate Tvarkyklės Photocoupler, Photo IC Output
|
|
1 831Prieinamumas
|
|
|
2,54 €
|
|
|
1,51 €
|
|
|
1,50 €
|
|
|
1,25 €
|
|
|
Peržiūrėti
|
|
|
1,10 €
|
|
|
1,24 €
|
|
|
1,14 €
|
|
|
1,12 €
|
|
|
1,10 €
|
|
Min.: 1
Daugkart.: 1
:
1 500
|
|
|
|
|
MOSFETs 60V 8A 33W AEC-Q101 Qualified
- SQS462EN-T1_GE3
- Vishay Semiconductors
-
1:
1,44 €
-
5 530Prieinamumas
|
„Mouser“ Dalies Nr.
78-SQS462EN-T1_GE3
|
Vishay Semiconductors
|
MOSFETs 60V 8A 33W AEC-Q101 Qualified
|
|
5 530Prieinamumas
|
|
|
1,44 €
|
|
|
0,912 €
|
|
|
0,605 €
|
|
|
0,475 €
|
|
|
0,379 €
|
|
|
Peržiūrėti
|
|
|
0,433 €
|
|
|
0,366 €
|
|
Min.: 1
Daugkart.: 1
:
3 000
|
|
|
|
|
MOSFETs T8 80V LL LFPAK
- NTMYS006N08LHTWG
- onsemi
-
1:
3,04 €
-
1 087Prieinamumas
|
„Mouser“ Dalies Nr.
863-NTMYS006N08LHTWG
|
onsemi
|
MOSFETs T8 80V LL LFPAK
|
|
1 087Prieinamumas
|
|
|
3,04 €
|
|
|
2,76 €
|
|
|
2,08 €
|
|
|
1,75 €
|
|
|
1,03 €
|
|
|
Peržiūrėti
|
|
|
1,63 €
|
|
|
1,01 €
|
|
Min.: 1
Daugkart.: 1
:
3 000
|
|
|
|
|
MOSFETs N-Chnl 60V
- ZVN4106FTA
- Diodes Incorporated
-
1:
0,817 €
-
19 431Prieinamumas
|
„Mouser“ Dalies Nr.
522-ZVN4106FTA
|
Diodes Incorporated
|
MOSFETs N-Chnl 60V
|
|
19 431Prieinamumas
|
|
|
0,817 €
|
|
|
0,51 €
|
|
|
0,331 €
|
|
|
0,331 €
|
|
Min.: 1
Daugkart.: 1
Maks.: 280
:
3 000
|
|
|
|
|
Perjungimo valdikliai Hi In V, C Mode Boost, Fly & SEPIC Cntr
- LTC1871EMS-7#PBF
- Analog Devices
-
1:
8,18 €
-
2 377Prieinamumas
|
„Mouser“ Dalies Nr.
584-LTC1871EMS-7#PBF
|
Analog Devices
|
Perjungimo valdikliai Hi In V, C Mode Boost, Fly & SEPIC Cntr
|
|
2 377Prieinamumas
|
|
|
8,18 €
|
|
|
6,37 €
|
|
|
5,63 €
|
|
|
5,41 €
|
|
|
Peržiūrėti
|
|
|
5,16 €
|
|
|
5,03 €
|
|
|
4,91 €
|
|
Min.: 1
Daugkart.: 1
|
|
|
