IPP65R090CFD7XKSA1

Infineon Technologies
726-P65R090CFD7XKSA1
IPP65R090CFD7XKSA1

Mfr.:

Description:
MOSFETs HIGH POWER_NEW

Lifecycle:
NRND:
Not recommended for new designs.
Datasheet:
ECAD Model:
Download the free Library Loader to convert this file for your ECAD Tool. Learn more about the ECAD Model.
More Information
Learn more about Infineon Technologies IPP65R090CFD7XKSA1

Product Attribute Attribute Value Select Attribute
Infineon
Product Category: MOSFETs
RoHS:  
Tube
- 55 C
+ 150 C
Brand: Infineon Technologies
Channel Mode: Enhancement
Id - Continuous Drain Current: 25 A
Mounting Style: Through Hole
Number of Channels: 1 Channel
Pd - Power Dissipation: 127 W
Product Type: MOSFETs
Qg - Gate Charge: 53 nC
Rds On - Drain-Source Resistance: 90 mOhms
Factory Pack Quantity: 500
Subcategory: Transistors
Technology: Si
Transistor Polarity: N-Channel
Vds - Drain-Source Breakdown Voltage: 700 V
Vgs - Gate-Source Voltage: 20 V
Vgs th - Gate-Source Threshold Voltage: 4.5 V
Part # Aliases: IPP65R090CFD7 SP005413363
Products found:
To show similar products, select at least one checkbox
Select at least one checkbox above to show similar products in this category.
Attributes selected: 0

Datasheet

Product Catalogs

Compliance Codes
CNHTS:
8541290000
USHTS:
8541290065
ECCN:
EAR99
Origin Classifications
Country of Origin:
China
Assembly Country of Origin:
China
Country of Diffusion:
Germany
The country is subject to change at the time of shipment.

In Stock: 774

Stock:
774 Can Dispatch Immediately
Factory Lead Time:
19 Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1
Unit Price:
-,-- €
Ext. Price:
-,-- €
Est. Tariff:

Pricing (EUR)

Qty. Unit Price
Ext. Price
5,78 € 5,78 €
3,07 € 30,70 €
2,80 € 280,00 €
2,43 € 1 215,00 €

An unexpected error has occurred.


Have a question? Please visit the Help Centre.
For questions about a specific order, please log in to your account.

If you encounter further problems, please contact us on 800-346-6873 or email help@mouser.com.