TQP7M9106

TQP7M910x High Linearity Amplifiers

Qorvo TQP7M910x High Linearity Amplifiers are Indium Gallium Phosphide (InGaP) / Gallium arsenide (GaAs) Heterojunction Bipolar Transistors (HBTs) that deliver high performance across a broad range of frequencies. The TQP7M910x Amplifiers integrate on-chip DC over-voltage and RF over-drive protection. This protects the amplifier from electrical DC voltage surges and high input RF input power levels that may occur in a system. On-chip ESD protection allows the amplifier to have a very robust Class 2 HBM ESD rating. The TQP7M910x Amplifiers are targeted for use as driver amplifiers in wireless infrastructure where high linearity, medium power, and high efficiency are required. These device are an excellent candidate for transceiver line cards and high power amplifiers in current and next generation multicarrier 3G / 4G base stations.

Qorvo TQP7M Series High Linearity Amplifiers

Qorvo TQP7M series of High Linearity Amplifiers incorporates on-chip features that differentiate them from other products current in the market. These High Linearity Amplifiers are targeted for use as a driver amplifier in wireless infrastructure where high linearity, medium power, and high efficiency are required. The TriQuint TQP7M series are excellent candidates for transceiver line cards in current and next generation multi-carrier 3G/4G base stations. Applications for these High Linearity Amplifiers include repeaters, mobile infrastructure, CDMA/WCDMA/LTE and general purpose wireless.
View the entire TQP7M Series