1ED3141MU12FXUMA1

Infineon Technologies
726-1ED3141MU12FXUMA
1ED3141MU12FXUMA1

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Aprašymas:
Galvaniškai Izoliuotos Gate Tvarkyklės ISOLATED DRIVER

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Prieinamumas: 426

Turime sandėlyje:
426
Galime išsiųsti iš karto
Pagal užsakymą:
2 500
Tikėtina 2026-06-18
Gamintojo numatytas pristatymo laikas
39
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Min. 1   Užsakoma po 1
Vieneto kaina:
-,-- €
Plėt. Kaina:
-,-- €
Numatomas Įkainis:
Pakuotė:
Visa Ritė (Užsakoma po 2500)

Kainodara (EUR)

Qty. Vieneto kaina
Plėt. Kaina
Nukerpama juosta / „MouseReel™“ †
1,29 € 1,29 €
0,946 € 9,46 €
0,853 € 21,33 €
0,758 € 75,80 €
0,712 € 178,00 €
0,685 € 342,50 €
0,662 € 662,00 €
Visa Ritė (Užsakoma po 2500)
0,60 € 1 500,00 €
0,599 € 4 492,50 €
† 5,00 € „MouseReel™“ mokestis bus pridėtas ir apskaičiuotas jūsų pirkinių krepšelyje. Visi „MouseReel™“ užsakymai neatšaukiami ir negrąžinami. ↩

Produkto Požymis Atributo vertė Pasirinkite Požymį
Infineon
Gaminio kategorija: Galvaniškai Izoliuotos Gate Tvarkyklės
RoHS:  
1ED3141
Reel
Cut Tape
MouseReel
Prekės Ženklas: Infineon Technologies
Jautrus drėgmei: Yes
Gaminio tipas: Galvanically Isolated Gate Drivers
Gamyklinės pakuotės kiekis: 2500
Prekinis pavadinimas: EiceDRIVER
Dalies Nr., kitokios klasifikacijos numeriai: 1ED3141MU12F SP005586201
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CNHTS:
8542399000
CAHTS:
8542390000
USHTS:
8542390090
MXHTS:
8542399999
ECCN:
EAR99

2ED EiceDRIVER™ 2-Channel MOSFET Driver ICs

Infineon Technologies 2ED EiceDRIVER™ 2-Channel MOSFET Driver ICs are the crucial link between Control ICs and powerful MOSFET and GaN switching devices. These MOSFET driver ICs enable high system level efficiencies, excellent power density, and consistent system robustness.

EiceDRIVER™ Gate Driver ICs

Infineon EiceDRIVER™ Gate Driver ICs are designed for MOSFETs, IGBTs, SiC MOSFETs, and GaN HEMTs devices. EiceDRIVER™ gate drivers provide a wide range of typical output current options, from 0.1A up to 10A. These devices have robust gate drive protection features such as fast short-circuit protection (DESAT), active Miller clamp, shoot-through protection, fault, shutdown, and over current protection. These features make these driver ICs well-suited for both silicon and wide-bandgap power devices, including CoolGaN™, and CoolSiC™. That’s why Infineon offers more than 500 EiceDRIVER™ gate driver IC solutions suitable for any power switch, and any application.

EiceDRIVER™ Isolated & Non-Isolated Gate Drivers

Infineon EiceDRIVER™ Isolated and Non-Isolated Gate Drivers provide optimized low- and high-voltage gate driver solutions for MOSFETs, IGBTs, and IGBT modules. These isolated and non-isolated gate driver ICs are designed to build reliable and efficient applications. An optimum gate drive configuration is essential for all power switches, whether they are in discrete form or in a power module. Infineon gate drivers provide a wide range of typical output current options, from 0.1A up to 10A, suitable for any power device size.

1-Channel EiceDRIVER™ MOSFET Gate Driver ICs

Infineon Technologies 1-Channel EiceDRIVER™ MOSFET Gate Driver ICs are the crucial link between control ICs, powerful MOSFET, and GaN switching devices. These gate driver ICs enable high system-level efficiencies, excellent power density, and consistent system robustness.

Isolated Gate Drivers

Infineon Isolated Gate Drivers use magnetically coupled coreless transformer (CT) technology to transfer signals across galvanic isolation. These drivers offer functional basic, reinforced isolated, UL 1577, and VDE 0884 certified products. The isolation allows for very large voltage swings (e.g. ±1200V). These isolated drivers incorporate the most important key features and parameters for MOSFET, IGBT, IGBT modules, SiC MOSFET, and GaN HEMT driving.

Experience the Difference in Power

Infineon is the leader in the power semiconductor market. With more than 20 years of experience and as the innovator of the revolutionary CoolMOS™ super junction MOSFET technology, Infineon continues pioneering in the power management field. Customers can select based on individual design/system requirements from the industry's broadest silicon-based SJ MOSFET portfolio. As one of the few manufacturers mastering all three main power technologies, Infineon complements this assortment with a groundbreaking wide bandgap (WBG) offering. This offering comprises silicon-carbide-based CoolSiC™ MOSFETs, matching diodes, and gallium-nitride-based CoolGaN™ e-mode HEMTs. Solutions are available, ranging from exceptional price performance through unrivaled robustness to best-in-class devices. This enables customers to build more efficient, environmentally friendly, sustainable applications.

EiceDRIVER™ X3 Compact ICs

Infineon Technologies EiceDRIVER™ X3 Compact ICs are high-performance galvanically isolated single-channel gate drivers designed for driving IGBTs, MOSFETs, and SiC MOSFETs. The Infineon gate driver ICs are available in a 150-mil, 8-pin package (1ED314xMU12F) or a 300-mil, 8-pin package (1ED314xMC12H). The components provide a typical output current of up to 6.5A. The input logic pins operate on a wide 3V to 6.5V input voltage range using CMOS threshold levels to support 3.3V microcontrollers. The coreless transformer technology realizes data transfer across the isolation barrier. All variants have input and output undervoltage lockout (UVLO) and active shutdown.

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