IRFZ Serija MOSFETs

Rezultatai: 25
Pasirinkite Vaizdas Dalies Nr. Gam. Aprašymas Duomenų Lapas Prieinamumas Kainodara (EUR) Filtruokite lentelėje pateiktus rezultatus pagal vieneto kainą, remdamiesi kiekiu. Qty. RoHS ECAD modelis Technologijos Montavimo stilius Pakuotė / Korpusas Tranzistoriaus poliškumas Kanalų skaičius Vds - nutekėjimo-šaltinio pramušimo įtampa svar. – nuolatinio išleidimo srovė RDS On - Drain-Source Varža Vgs - užtūros-šaltinio įtampa Vgs th - užtūros-šaltinio slenkstinė įtampa Qg – vartų krūvis Minimali darbinė temperatūra Didžiausia darbinė temperatūra Pd - skaidos galia Kanalas Mode Pakavimas
Vishay / Siliconix MOSFETs TO220 N-CH 60V 10A 3 899Prieinamumas
Min.: 1
Daugkart.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 60 V 10 A 200 mOhms - 20 V, 20 V 4 V 11 nC - 55 C + 175 C 43 W Enhancement Tube
Vishay Semiconductors MOSFETs TO220 N-CH 60V 50A 1 390Prieinamumas
Min.: 1
Daugkart.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 60 V 50 A 18 mOhms - 20 V, 20 V 4 V 110 nC - 55 C + 175 C 190 W Enhancement Tube
Vishay / Siliconix MOSFETs TO220 N-CH 60V 17A 5 465Prieinamumas
Min.: 1
Daugkart.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 60 V 17 A 100 mOhms - 20 V, 20 V 4 V 25 nC - 55 C + 175 C 60 W Enhancement Tube
Vishay Semiconductors MOSFETs TO220 N-CH 60V 17A 6 667Prieinamumas
Min.: 1
Daugkart.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 60 V 17 A 100 mOhms - 20 V, 20 V 4 V 25 nC - 55 C + 175 C 60 W Enhancement Tube
Vishay / Siliconix MOSFETs TO220 N-CH 60V 50A 3 037Prieinamumas
Min.: 1
Daugkart.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 60 V 50 A 28 mOhms - 20 V, 20 V 4 V 67 nC - 55 C + 175 C 150 W Enhancement Tube
Vishay Semiconductors MOSFETs N-Chan 60V 50 Amp 949Prieinamumas
Min.: 1
Daugkart.: 1

Si Through Hole N-Channel 1 Channel 60 V 50 A 18 mOhms - 20 V, 20 V 4 V 110 nC - 55 C + 175 C 190 W Enhancement Tube
Vishay / Siliconix MOSFETs TO220 N-CH 60V 10A 677Prieinamumas
Min.: 1
Daugkart.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 60 V 10 A 200 mOhms - 20 V, 20 V 2 V 11 nC - 55 C + 175 C 43 W Enhancement Tube
Vishay / Siliconix MOSFETs TO220 N-CH 50V 15A 1 486Prieinamumas
Min.: 1
Daugkart.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 50 V 15 A 100 mOhms - 20 V, 20 V 4 V 12 nC - 55 C + 150 C 40 W Enhancement Tube
Vishay Semiconductors MOSFETs TO220 N-CH 60V 50A 3 193Prieinamumas
2 000Tikėtina 2026-02-26
Min.: 1
Daugkart.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 20 V 50 A 28 mOhms - 20 V, 20 V 4 V 67 nC - 55 C + 175 C 150 W Enhancement Tube
Vishay Semiconductors MOSFETs TO220 N-CH 60V 50A 1 848Prieinamumas
Min.: 1
Daugkart.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 60 V 50 A 28 mOhms - 20 V, 20 V 4 V 67 nC - 55 C + 175 C 150 W Enhancement Tube
Vishay Semiconductors MOSFETs N-Chan 60V 50 Amp 1 447Prieinamumas
Min.: 1
Daugkart.: 1
Reel: 800

Si SMD/SMT D2PAK-3 (TO-263-3) N-Channel 1 Channel 60 V 50 A 28 mOhms - 20 V, 20 V 2 V 67 nC - 55 C + 175 C 150 W Enhancement Reel, Cut Tape, MouseReel
Vishay Semiconductors MOSFETs N-Channel 60V Power MOSFET 825Prieinamumas
Min.: 1
Daugkart.: 1

Si SMD/SMT D2PAK-3 (TO-263-3) N-Channel 1 Channel 60 V 50 A 18 mOhms - 20 V, 20 V 4 V 110 nC - 55 C + 175 C 190 W Enhancement Tube
Vishay Semiconductors MOSFETs TO220 N-CH 60V 10A 222Prieinamumas
4 000Tikėtina 2026-02-16
Min.: 1
Daugkart.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 60 V 10 A 200 mOhms - 20 V, 20 V 4 V 11 nC - 55 C + 175 C 43 W Enhancement Tube
Vishay Semiconductors MOSFETs N-Chan 60V 10 Amp 200mohm @ 10V 4Prieinamumas
1 000Tikėtina 2026-02-26
Min.: 1
Daugkart.: 1

Si SMD/SMT D2PAK-3 (TO-263-3) N-Channel 1 Channel 60 V 10 A 200 mOhms - 20 V, 20 V 2 V 11 nC - 55 C + 175 C 43 W Enhancement Tube
Vishay Semiconductors MOSFETs TO220 N-CH 50V 15A 1 177Prieinamumas
Min.: 1
Daugkart.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 50 V 15 A 100 mOhms - 20 V, 20 V 4 V 12 nC - 55 C + 150 C 40 W Enhancement Tube
Vishay Semiconductors MOSFETs TO220 N-CH 60V 50A 1 660Prieinamumas
Min.: 1
Daugkart.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 60 V 50 A 28 mOhms - 20 V, 20 V 4 V 67 nC - 55 C + 175 C 150 W Enhancement Tube
Vishay / Siliconix MOSFETs MOSFET N-Channel 60V 694Prieinamumas
Min.: 1
Daugkart.: 1
Reel: 800
Si SMD/SMT D2PAK-3 (TO-263-3) Reel, Cut Tape
Vishay / Siliconix MOSFETs TO220 N-CH 60V 50A 1 186Prieinamumas
Min.: 1
Daugkart.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 60 V 50 A 28 mOhms - 20 V, 20 V 4 V 67 nC - 55 C + 175 C 150 W Enhancement Tube
Vishay / Siliconix MOSFETs TO220 N-CH 60V 50A 654Prieinamumas
Min.: 1
Daugkart.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 60 V 50 A 28 mOhms - 20 V, 20 V 4 V 67 nC - 55 C + 175 C 150 W Enhancement Tube
Vishay Semiconductors MOSFETs N-Chan 60V 50 Amp 493Prieinamumas
Min.: 1
Daugkart.: 1
Si SMD/SMT D2PAK-3 (TO-263-3) N-Channel 1 Channel 60 V 50 A 18 mOhms - 20 V, 20 V 4 V 110 nC - 55 C + 175 C 190 W Enhancement Tube
Vishay Semiconductors MOSFETs N-Chan 60V 50 Amp
1 000Tikėtina 2026-03-10
Min.: 1
Daugkart.: 1

Si SMD/SMT D2PAK-3 (TO-263-3) N-Channel 1 Channel 60 V 50 A 28 mOhms - 20 V, 20 V 2 V 67 nC - 55 C + 175 C 150 W Enhancement Tube
Vishay / BC Components MOSFETs N-CHANNEL 60V Ne Sandėlyje Esantys
Min.: 1
Daugkart.: 1

Si
Vishay / Siliconix MOSFETs 60V 17A 60W Ne Sandėlyje Esantys
Min.: 800
Daugkart.: 800
Reel: 800

Si Reel
Vishay / Siliconix MOSFETs MOSFET N-Channel 60V Ne Sandėlyje Esantys
Min.: 800
Daugkart.: 800

Si SMD/SMT D2PAK-3 (TO-263-3)
Vishay / Siliconix MOSFETs TO263 N-CH 60V 50A Ne Sandėlyje Esantys
Min.: 800
Daugkart.: 800
Reel: 800

Si Reel