Industrial Power Solutions

Industrial applications will be a major contributor to the expected 35% to 40% world energy demand increase by 2030. Electronics and semiconductors can play a major role in energy conservation. onsemi power semiconductors today are clean energy enablers for a variety of industrial applications. onsemi offers IGBTs and MOSFETs featuring high current handling capability and low conduction and switching loss; optically isolated gate drivers with wide operating voltage range and high common-mode transient immunity; FPS™ controllers designed for high-performance power supplies with minimal external components; creative smart dual-coil relay drivers with integrated switches and wafer-level adjust capability for timing customization; and web-based tools that eliminate tedious bench time and allow popular power supply designs to be completed in minutes, saving weeks of time. onsemi combines power analog, power discrete and optoelectronic functional technologies, unique combinations of these functions for novel integrated solutions, and leading process and packing technologies that reduce size, heat, and cost. From source to system, look to onsemi for engineering energy efficiency.

Rezultatai: 3
Pasirinkite Vaizdas Dalies Nr. Gam. Aprašymas Duomenų Lapas Prieinamumas Kainodara (EUR) Filtruokite lentelėje pateiktus rezultatus pagal vieneto kainą, remdamiesi kiekiu. Qty. RoHS ECAD modelis Technologijos Montavimo stilius Pakuotė / Korpusas Tranzistoriaus poliškumas Kanalų skaičius Vds - nutekėjimo-šaltinio pramušimo įtampa svar. – nuolatinio išleidimo srovė RDS On - Drain-Source Varža Vgs - užtūros-šaltinio įtampa Vgs th - užtūros-šaltinio slenkstinė įtampa Qg – vartų krūvis Minimali darbinė temperatūra Didžiausia darbinė temperatūra Pd - skaidos galia Kanalas Mode Prekinis pavadinimas Pakavimas
onsemi MOSFETs SuperFET2, 190mohm 714Prieinamumas
Min.: 1
Daugkart.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 650 V 20.2 A 199 mOhms - 20 V, 20 V 2.5 V 74 nC - 55 C + 150 C 39 W Enhancement SuperFET II Tube
onsemi MOSFETs 600V N-CHAN MOSFET 1 265Prieinamumas
Min.: 1
Daugkart.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 600 V 10.2 A 380 mOhms - 20 V, 20 V 2.5 V 45 nC - 55 C + 150 C 106 W Enhancement SuperFET II Tube

onsemi MOSFETs 600V N-CHAN MOSFET 1 854Prieinamumas
Min.: 1
Daugkart.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 600 V 20.6 A 190 mOhms - 20 V, 20 V 2.5 V 63 nC - 55 C + 150 C 208 W Enhancement SuperFET II Tube