|
|
Igbt Moduliai IGBT Module 50A 600V
- FS50R06W1E3_B11
- Infineon Technologies
-
1:
28,50 €
-
242Prieinamumas
|
„Mouser“ Dalies Nr.
641-FS50R06W1E3_B11
|
Infineon Technologies
|
Igbt Moduliai IGBT Module 50A 600V
|
|
242Prieinamumas
|
|
|
28,50 €
|
|
|
21,02 €
|
|
|
19,50 €
|
|
Min.: 1
Daugkart.: 1
|
|
IGBT Modules
|
Si
|
SMD/SMT
|
Module
|
|
|
|
|
Igbt Moduliai 1700 V, 200 A dual IGBT module
- FF200R17KE4HOSA1
- Infineon Technologies
-
1:
128,00 €
-
13Prieinamumas
|
„Mouser“ Dalies Nr.
726-FF200R17KE4HOSA1
|
Infineon Technologies
|
Igbt Moduliai 1700 V, 200 A dual IGBT module
|
|
13Prieinamumas
|
|
Min.: 1
Daugkart.: 1
|
|
IGBT Modules
|
Si
|
Screw Mount
|
Module
|
|
|
|
|
Igbt Moduliai IGBT 1700V 3600A
- FZ3600R17HP4
- Infineon Technologies
-
1:
1 164,97 €
-
8Prieinamumas
-
12Tikėtina 2026-08-03
|
„Mouser“ Dalies Nr.
641-FZ3600R17HP4
|
Infineon Technologies
|
Igbt Moduliai IGBT 1700V 3600A
|
|
8Prieinamumas
12Tikėtina 2026-08-03
|
|
|
1 164,97 €
|
|
|
1 025,17 €
|
|
Min.: 1
Daugkart.: 1
|
|
IGBT Modules
|
Si
|
Screw Mount
|
Module
|
|
|
|
|
MOSFET moduliai Half Bridge Module SiC UMOSFET & SBD
- BSM180D12P3C007
- ROHM Semiconductor
-
1:
556,04 €
-
10Prieinamumas
|
„Mouser“ Dalies Nr.
755-BSM180D12P3C007
|
ROHM Semiconductor
|
MOSFET moduliai Half Bridge Module SiC UMOSFET & SBD
|
|
10Prieinamumas
|
|
Min.: 1
Daugkart.: 1
|
|
MOSFET Modules
|
SiC
|
Screw Mount
|
Module
|
N-Channel
|
|
|
|
MOSFET moduliai 300A SiC Power Module
- BSM300D12P2E001
- ROHM Semiconductor
-
1:
635,43 €
-
4Prieinamumas
|
„Mouser“ Dalies Nr.
755-BSM300D12P2E001
|
ROHM Semiconductor
|
MOSFET moduliai 300A SiC Power Module
|
|
4Prieinamumas
|
|
Min.: 1
Daugkart.: 1
|
|
MOSFET Modules
|
SiC
|
Screw Mount
|
Module
|
N-Channel
|
|
|
|
Igbt Moduliai HYBRID PACK DRIVE
- FS820R08A6P2BBPSA1
- Infineon Technologies
-
1:
251,08 €
-
9Prieinamumas
|
„Mouser“ Dalies Nr.
726-FS820R08A6P2BBP1
|
Infineon Technologies
|
Igbt Moduliai HYBRID PACK DRIVE
|
|
9Prieinamumas
|
|
Min.: 1
Daugkart.: 1
|
|
IGBT Modules
|
Si
|
Screw Mount
|
Module
|
|
|
|
|
MOSFET moduliai Mod: 1200V 120A (w/ Diode)
- BSM120D12P2C005
- ROHM Semiconductor
-
1:
328,94 €
-
11Prieinamumas
|
„Mouser“ Dalies Nr.
755-BSM120D12P2C005
|
ROHM Semiconductor
|
MOSFET moduliai Mod: 1200V 120A (w/ Diode)
|
|
11Prieinamumas
|
|
Min.: 1
Daugkart.: 1
|
|
MOSFET Modules
|
SiC
|
Screw Mount
|
Module
|
N-Channel
|
|
|
|
Igbt Moduliai 650 V, 100 A booster IGBT module
- DF100R07W1H5FPB54BPSA2
- Infineon Technologies
-
1:
33,53 €
-
28Prieinamumas
|
„Mouser“ Dalies Nr.
726-DFW1H5FPB54BPSA2
|
Infineon Technologies
|
Igbt Moduliai 650 V, 100 A booster IGBT module
|
|
28Prieinamumas
|
|
|
33,53 €
|
|
|
25,72 €
|
|
|
22,39 €
|
|
Min.: 1
Daugkart.: 1
|
|
IGBT Modules
|
SiC
|
Press Fit
|
Module
|
|
|
|
|
Igbt Moduliai 650 V, 100 A booster IGBT module
- DF100R07W1H5FPB53BPSA2
- Infineon Technologies
-
1:
32,06 €
-
30Prieinamumas
|
„Mouser“ Dalies Nr.
726-DFW1H5FPB53BPSA2
|
Infineon Technologies
|
Igbt Moduliai 650 V, 100 A booster IGBT module
|
|
30Prieinamumas
|
|
Min.: 1
Daugkart.: 1
|
|
IGBT Modules
|
SiC
|
Press Fit
|
Module
|
|
|
|
|
MOSFET moduliai 576A 1200V HALF BRIDGE SIC
- BSM600D12P3G001
- ROHM Semiconductor
-
1:
1 680,52 €
-
4Prieinamumas
|
„Mouser“ Dalies Nr.
755-BSM600D12P3G001
|
ROHM Semiconductor
|
MOSFET moduliai 576A 1200V HALF BRIDGE SIC
|
|
4Prieinamumas
|
|
Min.: 1
Daugkart.: 1
|
|
MOSFET Modules
|
SiC
|
Screw Mount
|
Module
|
N-Channel
|
|
|
|
MOSFET moduliai 1200V, 300A, Boost Chopper, Full SiC-Power Module with Trench MOSFET
- BSM300C12P3E201
- ROHM Semiconductor
-
1:
611,85 €
-
4Prieinamumas
|
„Mouser“ Dalies Nr.
755-BSM300C12P3E201
|
ROHM Semiconductor
|
MOSFET moduliai 1200V, 300A, Boost Chopper, Full SiC-Power Module with Trench MOSFET
|
|
4Prieinamumas
|
|
Min.: 1
Daugkart.: 1
|
|
MOSFET Modules
|
SiC
|
Screw Mount
|
Module
|
N-Channel
|
|
|
|
MOSFET moduliai 1200V Vdss; 204A ID SiC Mod; SICSTD02
- BSM180C12P2E202
- ROHM Semiconductor
-
1:
581,39 €
-
4Prieinamumas
|
„Mouser“ Dalies Nr.
755-BSM180C12P2E202
|
ROHM Semiconductor
|
MOSFET moduliai 1200V Vdss; 204A ID SiC Mod; SICSTD02
|
|
4Prieinamumas
|
|
Min.: 1
Daugkart.: 1
|
|
MOSFET Modules
|
SiC
|
Screw Mount
|
Module
|
N-Channel
|
|
|
|
MOSFET moduliai 358A 1200V HALF BRIDGE SIC
- BSM400D12P3G002
- ROHM Semiconductor
-
1:
1 113,53 €
-
2Prieinamumas
-
NRND
|
„Mouser“ Dalies Nr.
755-BSM400D12P3G002
NRND
|
ROHM Semiconductor
|
MOSFET moduliai 358A 1200V HALF BRIDGE SIC
|
|
2Prieinamumas
|
|
Min.: 1
Daugkart.: 1
|
|
MOSFET Modules
|
SiC
|
Screw Mount
|
Module
|
N-Channel
|
|
|
|
MOSFET moduliai SIC Pwr Module Half Bridge
- BSM300D12P3E005
- ROHM Semiconductor
-
1:
1 226,60 €
-
4Prieinamumas
-
NRND
|
„Mouser“ Dalies Nr.
755-BSM300D12P3E005
NRND
|
ROHM Semiconductor
|
MOSFET moduliai SIC Pwr Module Half Bridge
|
|
4Prieinamumas
|
|
Min.: 1
Daugkart.: 1
|
|
MOSFET Modules
|
SiC
|
Screw Mount
|
Module
|
N-Channel
|
|
|
|
MOSFET moduliai Mod: 1200V 180A (no Diode)
- BSM180D12P2C101
- ROHM Semiconductor
-
1:
465,43 €
-
2Prieinamumas
|
„Mouser“ Dalies Nr.
755-BSM180D12P2C101
|
ROHM Semiconductor
|
MOSFET moduliai Mod: 1200V 180A (no Diode)
|
|
2Prieinamumas
|
|
Min.: 1
Daugkart.: 1
|
|
MOSFET Modules
|
SiC
|
Screw Mount
|
Module
|
N-Channel
|
|
|
|
Igbt Moduliai 1700 V, 1200 A dual IGBT module
- FF1200XTR17T2P5BPSA1
- Infineon Technologies
-
1:
1 082,43 €
-
24Prieinamumas
|
„Mouser“ Dalies Nr.
726-FF1200XTR17T2P5B
|
Infineon Technologies
|
Igbt Moduliai 1700 V, 1200 A dual IGBT module
|
|
24Prieinamumas
|
|
Min.: 1
Daugkart.: 1
|
|
IGBT Modules
|
Si
|
Screw Mount
|
Module
|
|
|
|
|
Igbt Moduliai 1700 V, 1800 A dual IGBT module
- FF1800XTR17T2P5PBPSA1
- Infineon Technologies
-
1:
1 289,33 €
-
19Prieinamumas
|
„Mouser“ Dalies Nr.
726-FF1800XTR17T2P5P
|
Infineon Technologies
|
Igbt Moduliai 1700 V, 1800 A dual IGBT module
|
|
19Prieinamumas
|
|
Min.: 1
Daugkart.: 1
|
|
IGBT Modules
|
Si
|
Screw Mount
|
Module
|
|
|
|
|
Igbt Moduliai Modules IGBT - IAP IGBT
- VS-GT200TS065N
- Vishay Semiconductors
-
1:
79,22 €
-
60Prieinamumas
|
„Mouser“ Dalies Nr.
78-VS-GT200TS065N
|
Vishay Semiconductors
|
Igbt Moduliai Modules IGBT - IAP IGBT
|
|
60Prieinamumas
|
|
|
79,22 €
|
|
|
70,27 €
|
|
|
59,82 €
|
|
Min.: 1
Daugkart.: 1
|
|
IGBT Modules
|
Si
|
Screw Mount
|
Module
|
|
|
|
|
Igbt Moduliai Modules IGBT - IAP IGBT
- VS-GT200TS065S
- Vishay Semiconductors
-
1:
97,70 €
-
27Prieinamumas
|
„Mouser“ Dalies Nr.
78-VS-GT200TS065S
|
Vishay Semiconductors
|
Igbt Moduliai Modules IGBT - IAP IGBT
|
|
27Prieinamumas
|
|
Min.: 1
Daugkart.: 1
|
|
IGBT Modules
|
Si
|
Screw Mount
|
Module
|
|
|
|
|
Igbt Moduliai IGBT 1200V 400A
- FZ400R12KE4
- Infineon Technologies
-
1:
107,74 €
-
460Prieinamumas
|
„Mouser“ Dalies Nr.
641-FZ400R12KE4
|
Infineon Technologies
|
Igbt Moduliai IGBT 1200V 400A
|
|
460Prieinamumas
|
|
|
107,74 €
|
|
|
92,97 €
|
|
|
92,08 €
|
|
Min.: 1
Daugkart.: 1
|
|
IGBT Modules
|
Si
|
Screw Mount
|
Module
|
|
|
|
|
Igbt Moduliai 1700 V, 1800 A dual IGBT module
- FF1800XTR17T2P5BPSA1
- Infineon Technologies
-
1:
1 261,58 €
-
11Prieinamumas
|
„Mouser“ Dalies Nr.
726-FF1800XTR17T2P5B
|
Infineon Technologies
|
Igbt Moduliai 1700 V, 1800 A dual IGBT module
|
|
11Prieinamumas
|
|
|
1 261,58 €
|
|
|
1 094,33 €
|
|
Min.: 1
Daugkart.: 1
|
|
IGBT Modules
|
Si
|
Screw Mount
|
Module
|
|
|
|
|
MOSFET moduliai 1200V, 291A, Half bridge, Full SiC-Power Module with Trench MOSFET
- BSM300D12P4G101
- ROHM Semiconductor
-
1:
552,31 €
-
4Prieinamumas
|
„Mouser“ Dalies Nr.
755-BSM300D12P4G101
|
ROHM Semiconductor
|
MOSFET moduliai 1200V, 291A, Half bridge, Full SiC-Power Module with Trench MOSFET
|
|
4Prieinamumas
|
|
Min.: 1
Daugkart.: 1
|
|
MOSFET Modules
|
SiC
|
Screw Mount
|
Module
|
N-Channel
|
|
|
|
MOSFET moduliai 1200V, 567A, Half bridge, Full SiC-Power Module with Trench MOSFET
- BSM600D12P4G103
- ROHM Semiconductor
-
1:
1 041,28 €
-
4Prieinamumas
|
„Mouser“ Dalies Nr.
755-BSM600D12P4G103
|
ROHM Semiconductor
|
MOSFET moduliai 1200V, 567A, Half bridge, Full SiC-Power Module with Trench MOSFET
|
|
4Prieinamumas
|
|
Min.: 1
Daugkart.: 1
|
|
MOSFET Modules
|
SiC
|
Screw Mount
|
Module
|
N-Channel
|
|
|
|
Igbt Moduliai Modules IGBT - IAP IGBT
- VS-GT150TS065S
- Vishay Semiconductors
-
1:
87,02 €
-
25Prieinamumas
|
„Mouser“ Dalies Nr.
78-VS-GT150TS065S
|
Vishay Semiconductors
|
Igbt Moduliai Modules IGBT - IAP IGBT
|
|
25Prieinamumas
|
|
|
87,02 €
|
|
|
77,97 €
|
|
|
67,30 €
|
|
Min.: 1
Daugkart.: 1
|
|
IGBT Modules
|
Si
|
Screw Mount
|
Module
|
|
|
|
|
MOSFET moduliai 1700V Vdss; 250A Id SiC Pwr Module
- BSM250D17P2E004
- ROHM Semiconductor
-
1:
981,14 €
-
44Prieinamumas
|
„Mouser“ Dalies Nr.
755-BSM250D17P2E004
|
ROHM Semiconductor
|
MOSFET moduliai 1700V Vdss; 250A Id SiC Pwr Module
|
|
44Prieinamumas
|
|
Min.: 1
Daugkart.: 1
:
4
|
|
MOSFET Modules
|
SiC
|
Screw Mount
|
Module
|
N-Channel
|
|