|
|
Igbt Moduliai IGBT 1700V 3600A
- FZ3600R17HP4
- Infineon Technologies
-
1:
1 123,69 €
-
25Prieinamumas
|
„Mouser“ Dalies Nr.
641-FZ3600R17HP4
|
Infineon Technologies
|
Igbt Moduliai IGBT 1700V 3600A
|
|
25Prieinamumas
|
|
Min.: 1
Daugkart.: 1
|
|
IGBT Modules
|
Si
|
Screw Mount
|
Module
|
|
|
|
|
Igbt Moduliai 1700 V, 200 A dual IGBT module
- FF200R17KE4HOSA1
- Infineon Technologies
-
1:
93,44 €
-
13Prieinamumas
|
„Mouser“ Dalies Nr.
726-FF200R17KE4HOSA1
|
Infineon Technologies
|
Igbt Moduliai 1700 V, 200 A dual IGBT module
|
|
13Prieinamumas
|
|
Min.: 1
Daugkart.: 1
|
|
IGBT Modules
|
Si
|
Screw Mount
|
Module
|
|
|
|
|
Igbt Moduliai IGBT Module 50A 600V
- FS50R06W1E3_B11
- Infineon Technologies
-
1:
29,03 €
-
242Prieinamumas
|
„Mouser“ Dalies Nr.
641-FS50R06W1E3_B11
|
Infineon Technologies
|
Igbt Moduliai IGBT Module 50A 600V
|
|
242Prieinamumas
|
|
Min.: 1
Daugkart.: 1
|
|
IGBT Modules
|
Si
|
SMD/SMT
|
Module
|
|
|
|
|
MOSFET moduliai Mod: 1200V 120A (w/ Diode)
- BSM120D12P2C005
- ROHM Semiconductor
-
1:
328,94 €
-
11Prieinamumas
|
„Mouser“ Dalies Nr.
755-BSM120D12P2C005
|
ROHM Semiconductor
|
MOSFET moduliai Mod: 1200V 120A (w/ Diode)
|
|
11Prieinamumas
|
|
Min.: 1
Daugkart.: 1
|
|
MOSFET Modules
|
SiC
|
Screw Mount
|
Module
|
N-Channel
|
|
|
|
MOSFET moduliai Half Bridge Module SiC UMOSFET & SBD
- BSM180D12P3C007
- ROHM Semiconductor
-
1:
503,79 €
-
12Prieinamumas
|
„Mouser“ Dalies Nr.
755-BSM180D12P3C007
|
ROHM Semiconductor
|
MOSFET moduliai Half Bridge Module SiC UMOSFET & SBD
|
|
12Prieinamumas
|
|
Min.: 1
Daugkart.: 1
|
|
MOSFET Modules
|
SiC
|
Screw Mount
|
Module
|
N-Channel
|
|
|
|
MOSFET moduliai 300A SiC Power Module
- BSM300D12P2E001
- ROHM Semiconductor
-
1:
635,43 €
-
4Prieinamumas
|
„Mouser“ Dalies Nr.
755-BSM300D12P2E001
|
ROHM Semiconductor
|
MOSFET moduliai 300A SiC Power Module
|
|
4Prieinamumas
|
|
Min.: 1
Daugkart.: 1
|
|
MOSFET Modules
|
SiC
|
Screw Mount
|
Module
|
N-Channel
|
|
|
|
MOSFET moduliai 1200V Vdss; 204A ID SiC Mod; SICSTD02
- BSM180C12P2E202
- ROHM Semiconductor
-
1:
589,72 €
-
4Prieinamumas
|
„Mouser“ Dalies Nr.
755-BSM180C12P2E202
|
ROHM Semiconductor
|
MOSFET moduliai 1200V Vdss; 204A ID SiC Mod; SICSTD02
|
|
4Prieinamumas
|
|
Min.: 1
Daugkart.: 1
|
|
MOSFET Modules
|
SiC
|
Screw Mount
|
Module
|
N-Channel
|
|
|
|
MOSFET moduliai EASY
- F3L11MR12W2M1B74BOMA1
- Infineon Technologies
-
1:
120,41 €
-
18Prieinamumas
|
„Mouser“ Dalies Nr.
726-F3L11MR12W2M1B74
|
Infineon Technologies
|
MOSFET moduliai EASY
|
|
18Prieinamumas
|
|
Min.: 1
Daugkart.: 1
|
|
MOSFET Modules
|
SiC
|
Press Fit
|
Module
|
N-Channel
|
|
|
|
Igbt Moduliai 650 V, 100 A booster IGBT module
- DF100R07W1H5FPB54BPSA2
- Infineon Technologies
-
1:
32,52 €
-
29Prieinamumas
|
„Mouser“ Dalies Nr.
726-DFW1H5FPB54BPSA2
|
Infineon Technologies
|
Igbt Moduliai 650 V, 100 A booster IGBT module
|
|
29Prieinamumas
|
|
Min.: 1
Daugkart.: 1
|
|
IGBT Modules
|
SiC
|
Press Fit
|
Module
|
|
|
|
|
Igbt Moduliai IGBT MODULES 650V 150A
- F3L150R07W2E3_B11
- Infineon Technologies
-
1:
45,44 €
-
17Prieinamumas
|
„Mouser“ Dalies Nr.
641-F3L150R07W2E3B11
|
Infineon Technologies
|
Igbt Moduliai IGBT MODULES 650V 150A
|
|
17Prieinamumas
|
|
Min.: 1
Daugkart.: 1
|
|
IGBT Modules
|
Si
|
SMD/SMT
|
Module
|
|
|
|
|
Igbt Moduliai 650 V, 100 A booster IGBT module
- DF100R07W1H5FPB53BPSA2
- Infineon Technologies
-
1:
26,78 €
-
30Prieinamumas
|
„Mouser“ Dalies Nr.
726-DFW1H5FPB53BPSA2
|
Infineon Technologies
|
Igbt Moduliai 650 V, 100 A booster IGBT module
|
|
30Prieinamumas
|
|
Min.: 1
Daugkart.: 1
|
|
IGBT Modules
|
SiC
|
Press Fit
|
Module
|
|
|
|
|
MOSFET moduliai 576A 1200V HALF BRIDGE SIC
- BSM600D12P3G001
- ROHM Semiconductor
-
1:
1 754,40 €
-
4Prieinamumas
|
„Mouser“ Dalies Nr.
755-BSM600D12P3G001
|
ROHM Semiconductor
|
MOSFET moduliai 576A 1200V HALF BRIDGE SIC
|
|
4Prieinamumas
|
|
Min.: 1
Daugkart.: 1
|
|
MOSFET Modules
|
SiC
|
Screw Mount
|
Module
|
N-Channel
|
|
|
|
MOSFET moduliai 1200V, 300A, Boost Chopper, Full SiC-Power Module with Trench MOSFET
- BSM300C12P3E201
- ROHM Semiconductor
-
1:
559,44 €
-
4Prieinamumas
|
„Mouser“ Dalies Nr.
755-BSM300C12P3E201
|
ROHM Semiconductor
|
MOSFET moduliai 1200V, 300A, Boost Chopper, Full SiC-Power Module with Trench MOSFET
|
|
4Prieinamumas
|
|
Min.: 1
Daugkart.: 1
|
|
MOSFET Modules
|
SiC
|
Screw Mount
|
Module
|
N-Channel
|
|
|
|
MOSFET moduliai Mod: 1200V 180A (no Diode)
- BSM180D12P2C101
- ROHM Semiconductor
-
1:
409,06 €
-
2Prieinamumas
|
„Mouser“ Dalies Nr.
755-BSM180D12P2C101
|
ROHM Semiconductor
|
MOSFET moduliai Mod: 1200V 180A (no Diode)
|
|
2Prieinamumas
|
|
Min.: 1
Daugkart.: 1
|
|
MOSFET Modules
|
SiC
|
Screw Mount
|
Module
|
N-Channel
|
|
|
|
MOSFET moduliai SIC Pwr Module Half Bridge
- BSM300D12P3E005
- ROHM Semiconductor
-
1:
1 347,92 €
-
4Prieinamumas
-
NRND
|
„Mouser“ Dalies Nr.
755-BSM300D12P3E005
NRND
|
ROHM Semiconductor
|
MOSFET moduliai SIC Pwr Module Half Bridge
|
|
4Prieinamumas
|
|
Min.: 1
Daugkart.: 1
|
|
MOSFET Modules
|
SiC
|
Screw Mount
|
Module
|
N-Channel
|
|
|
|
MOSFET moduliai 358A 1200V HALF BRIDGE SIC
- BSM400D12P3G002
- ROHM Semiconductor
-
1:
1 223,66 €
-
2Prieinamumas
-
NRND
|
„Mouser“ Dalies Nr.
755-BSM400D12P3G002
NRND
|
ROHM Semiconductor
|
MOSFET moduliai 358A 1200V HALF BRIDGE SIC
|
|
2Prieinamumas
|
|
Min.: 1
Daugkart.: 1
|
|
MOSFET Modules
|
SiC
|
Screw Mount
|
Module
|
N-Channel
|
|
|
|
MOSFET moduliai HYBRID PACK DRIVE G2 SIC
- FS01MR12A8MA2BHPSA1
- Infineon Technologies
-
1:
1 132,07 €
-
2Prieinamumas
-
24Pagal užsakymą
-
Naujas Produktas
|
„Mouser“ Dalies Nr.
726-FS01MR12A8MA2BHP
Naujas Produktas
|
Infineon Technologies
|
MOSFET moduliai HYBRID PACK DRIVE G2 SIC
|
|
2Prieinamumas
24Pagal užsakymą
|
|
Min.: 1
Daugkart.: 1
|
|
MOSFET Modules
|
SiC
|
Press Fit
|
Module
|
N-Channel
|
|
|
|
Igbt Moduliai 1700 V, 1200 A dual IGBT module
- FF1200XTR17T2P5BPSA1
- Infineon Technologies
-
1:
978,33 €
-
24Prieinamumas
|
„Mouser“ Dalies Nr.
726-FF1200XTR17T2P5B
|
Infineon Technologies
|
Igbt Moduliai 1700 V, 1200 A dual IGBT module
|
|
24Prieinamumas
|
|
Min.: 1
Daugkart.: 1
|
|
IGBT Modules
|
Si
|
Screw Mount
|
Module
|
|
|
|
|
Igbt Moduliai 1700 V, 1800 A dual IGBT module
- FF1800XTR17T2P5PBPSA1
- Infineon Technologies
-
1:
1 037,85 €
-
19Prieinamumas
|
„Mouser“ Dalies Nr.
726-FF1800XTR17T2P5P
|
Infineon Technologies
|
Igbt Moduliai 1700 V, 1800 A dual IGBT module
|
|
19Prieinamumas
|
|
Min.: 1
Daugkart.: 1
|
|
IGBT Modules
|
Si
|
Screw Mount
|
Module
|
|
|
|
|
Igbt Moduliai Modules IGBT - IAP IGBT
- VS-GT200TS065N
- Vishay Semiconductors
-
1:
79,22 €
-
60Prieinamumas
|
„Mouser“ Dalies Nr.
78-VS-GT200TS065N
|
Vishay Semiconductors
|
Igbt Moduliai Modules IGBT - IAP IGBT
|
|
60Prieinamumas
|
|
|
79,22 €
|
|
|
70,27 €
|
|
|
59,82 €
|
|
Min.: 1
Daugkart.: 1
|
|
IGBT Modules
|
Si
|
Screw Mount
|
Module
|
|
|
|
|
Igbt Moduliai Modules IGBT - IAP IGBT
- VS-GT200TS065S
- Vishay Semiconductors
-
1:
97,70 €
-
27Prieinamumas
|
„Mouser“ Dalies Nr.
78-VS-GT200TS065S
|
Vishay Semiconductors
|
Igbt Moduliai Modules IGBT - IAP IGBT
|
|
27Prieinamumas
|
|
Min.: 1
Daugkart.: 1
|
|
IGBT Modules
|
Si
|
Screw Mount
|
Module
|
|
|
|
|
Igbt Moduliai IGBT 1200V 400A
- FZ400R12KE4
- Infineon Technologies
-
1:
86,83 €
-
435Prieinamumas
-
120Tikėtina 2026-05-25
|
„Mouser“ Dalies Nr.
641-FZ400R12KE4
|
Infineon Technologies
|
Igbt Moduliai IGBT 1200V 400A
|
|
435Prieinamumas
120Tikėtina 2026-05-25
|
|
Min.: 1
Daugkart.: 1
|
|
IGBT Modules
|
Si
|
Screw Mount
|
Module
|
|
|
|
|
Igbt Moduliai 1700 V, 1800 A dual IGBT module
- FF1800XTR17T2P5BPSA1
- Infineon Technologies
-
1:
1 013,52 €
-
11Prieinamumas
|
„Mouser“ Dalies Nr.
726-FF1800XTR17T2P5B
|
Infineon Technologies
|
Igbt Moduliai 1700 V, 1800 A dual IGBT module
|
|
11Prieinamumas
|
|
Min.: 1
Daugkart.: 1
|
|
IGBT Modules
|
Si
|
Screw Mount
|
Module
|
|
|
|
|
MOSFET moduliai 1200V, 291A, Half bridge, Full SiC-Power Module with Trench MOSFET
- BSM300D12P4G101
- ROHM Semiconductor
-
1:
546,95 €
-
4Prieinamumas
|
„Mouser“ Dalies Nr.
755-BSM300D12P4G101
|
ROHM Semiconductor
|
MOSFET moduliai 1200V, 291A, Half bridge, Full SiC-Power Module with Trench MOSFET
|
|
4Prieinamumas
|
|
Min.: 1
Daugkart.: 1
|
|
MOSFET Modules
|
SiC
|
Screw Mount
|
Module
|
N-Channel
|
|
|
|
MOSFET moduliai 1200V, 447A, Half bridge, Full SiC-Power Module with Trench MOSFET
- BSM450D12P4G102
- ROHM Semiconductor
-
1:
667,70 €
-
4Prieinamumas
|
„Mouser“ Dalies Nr.
755-BSM450D12P4G102
|
ROHM Semiconductor
|
MOSFET moduliai 1200V, 447A, Half bridge, Full SiC-Power Module with Trench MOSFET
|
|
4Prieinamumas
|
|
Min.: 1
Daugkart.: 1
|
|
MOSFET Modules
|
SiC
|
Screw Mount
|
Module
|
N-Channel
|
|