|
|
MOSFET moduliai 1000V 65A SOT-227 Power MOSFET
- IXFN70N100X
- IXYS
-
1:
55,47 €
-
187Prieinamumas
|
„Mouser“ Dalies Nr.
747-IXFN70N100X
|
IXYS
|
MOSFET moduliai 1000V 65A SOT-227 Power MOSFET
|
|
187Prieinamumas
|
|
Min.: 1
Daugkart.: 1
|
|
|
Si
|
Screw Mount
|
SOT-227-4
|
N-Channel
|
1 Channel
|
1 kV
|
65 A
|
89 mOhms
|
- 30 V, + 30 V
|
3.5 V
|
- 55 C
|
+ 150 C
|
1.2 kW
|
X-Class
|
Tube
|
|
|
|
MOSFET moduliai Q3Class HiPerFET Pwr MOSFET 800V/49A
- IXFN62N80Q3
- IXYS
-
1:
45,11 €
-
212Prieinamumas
|
„Mouser“ Dalies Nr.
747-IXFN62N80Q3
|
IXYS
|
MOSFET moduliai Q3Class HiPerFET Pwr MOSFET 800V/49A
|
|
212Prieinamumas
|
|
Min.: 1
Daugkart.: 1
|
|
|
Si
|
Screw Mount
|
SOT-227-4
|
N-Channel
|
1 Channel
|
800 V
|
49 A
|
140 mOhms
|
- 30 V, + 30 V
|
|
- 55 C
|
+ 150 C
|
960 W
|
IXFN62N80
|
Tube
|
|
|
|
MOSFET moduliai 44 Amps 500V
- IXTN46N50L
- IXYS
-
1:
49,41 €
-
265Prieinamumas
|
„Mouser“ Dalies Nr.
747-IXTN46N50L
|
IXYS
|
MOSFET moduliai 44 Amps 500V
|
|
265Prieinamumas
|
|
Min.: 1
Daugkart.: 1
|
|
|
Si
|
Screw Mount
|
SOT-227-4
|
N-Channel
|
1 Channel
|
500 V
|
46 A
|
160 mOhms
|
- 30 V, + 30 V
|
|
- 55 C
|
+ 150 C
|
700 W
|
IXTN46N50
|
Tube
|
|
|
|
MOSFET moduliai Q3Class HiPerFET Pwr MOSFET 1000V/38A
- IXFN44N100Q3
- IXYS
-
1:
53,93 €
-
147Prieinamumas
|
„Mouser“ Dalies Nr.
747-IXFN44N100Q3
|
IXYS
|
MOSFET moduliai Q3Class HiPerFET Pwr MOSFET 1000V/38A
|
|
147Prieinamumas
|
|
Min.: 1
Daugkart.: 1
|
|
|
Si
|
Screw Mount
|
SOT-227-4
|
N-Channel
|
1 Channel
|
1 kV
|
38 A
|
220 mOhms
|
- 30 V, + 30 V
|
|
|
+ 150 C
|
960 W
|
IXFN44N100
|
Tube
|
|
|
|
MOSFET moduliai PolarHV HiPerFETs 500V-1.2Kv Red Rds
- IXFN40N90P
- IXYS
-
1:
35,55 €
-
280Prieinamumas
|
„Mouser“ Dalies Nr.
747-IXFN40N90P
|
IXYS
|
MOSFET moduliai PolarHV HiPerFETs 500V-1.2Kv Red Rds
|
|
280Prieinamumas
|
|
Min.: 1
Daugkart.: 1
|
|
|
Si
|
Screw Mount
|
SOT-227B
|
|
|
|
|
|
|
|
- 55 C
|
+ 150 C
|
|
HiPerFET
|
Tube
|
|
|
|
MOSFET moduliai MOSFET SIC 1200 V 80 mOhm SOT-227
- MSC080SMA120J
- Microchip Technology
-
1:
24,77 €
-
33Prieinamumas
|
„Mouser“ Dalies Nr.
494-MSC080SMA120J
|
Microchip Technology
|
MOSFET moduliai MOSFET SIC 1200 V 80 mOhm SOT-227
|
|
33Prieinamumas
|
|
|
24,77 €
|
|
|
21,58 €
|
|
|
21,27 €
|
|
|
19,28 €
|
|
Min.: 1
Daugkart.: 1
|
|
|
SiC
|
Screw Mount
|
SOT-227-4
|
N-Channel
|
1 Channel
|
1.2 kV
|
37 A
|
100 mOhms
|
- 10 V, + 25 V
|
|
- 55 C
|
+ 175 C
|
200 W
|
|
Tube
|
|
|
|
MOSFET moduliai 70V 200A
- IXFN200N07
- IXYS
-
1:
41,15 €
-
202Prieinamumas
-
NRND
|
„Mouser“ Dalies Nr.
747-IXFN200N07
NRND
|
IXYS
|
MOSFET moduliai 70V 200A
|
|
202Prieinamumas
|
|
Min.: 1
Daugkart.: 1
|
|
|
Si
|
Screw Mount
|
SOT-227-4
|
N-Channel
|
1 Channel
|
70 V
|
200 A
|
6 mOhms
|
- 20 V, + 20 V
|
|
- 55 C
|
+ 150 C
|
520 W
|
HiPerFET
|
Tube
|
|
|
|
MOSFET moduliai 45 Amps 800V
- IXKN45N80C
- IXYS
-
1:
51,17 €
-
7Prieinamumas
|
„Mouser“ Dalies Nr.
747-IXKN45N80C
|
IXYS
|
MOSFET moduliai 45 Amps 800V
|
|
7Prieinamumas
|
|
Min.: 1
Daugkart.: 1
|
|
|
Si
|
Screw Mount
|
SOT-227-4
|
N-Channel
|
1 Channel
|
800 V
|
44 A
|
63 mOhms
|
- 10 V, + 10 V
|
3.9 V
|
- 55 C
|
+ 150 C
|
|
IXKN45N80
|
Tube
|
|
|
|
MOSFET moduliai SiC MOSFET phaseleg 25mO SMPD-B
- MCB40P1200LB-TUB
- IXYS
-
1:
232,48 €
-
26Prieinamumas
|
„Mouser“ Dalies Nr.
747-MCB40P1200LB-TUB
|
IXYS
|
MOSFET moduliai SiC MOSFET phaseleg 25mO SMPD-B
|
|
26Prieinamumas
|
|
Min.: 1
Daugkart.: 1
|
|
|
SiC
|
SMD/SMT
|
SMPD-10
|
N-Channel
|
|
1.2 kV
|
58 A
|
|
- 20 V, + 20 V
|
|
- 40 C
|
+ 150 C
|
|
|
Tube
|
|
|
|
MOSFET moduliai PM-MOSFET-FREDFET-5-SP6C
Microchip Technology APTM10AM02FG
- APTM10AM02FG
- Microchip Technology
-
1:
232,43 €
-
1Prieinamumas
|
„Mouser“ Dalies Nr.
494-APTM10AM02FG
|
Microchip Technology
|
MOSFET moduliai PM-MOSFET-FREDFET-5-SP6C
|
|
1Prieinamumas
|
|
Min.: 1
Daugkart.: 1
|
|
|
Si
|
|
|
|
|
|
|
|
|
|
|
|
|
|
Tube
|
|
|
|
MOSFET moduliai Automotive-grade ACEPACK DMT-32 power module, sixpac topology, 1200 V, 47.5 mOhm typ. SiC Power MOSFET with NTC
- M2P45M12W2-1LA
- STMicroelectronics
-
1:
48,42 €
-
124Prieinamumas
-
Naujas Produktas
|
„Mouser“ Dalies Nr.
511-M2P45M12W2-1LA
Naujas Produktas
|
STMicroelectronics
|
MOSFET moduliai Automotive-grade ACEPACK DMT-32 power module, sixpac topology, 1200 V, 47.5 mOhm typ. SiC Power MOSFET with NTC
|
|
124Prieinamumas
|
|
Min.: 1
Daugkart.: 1
|
|
|
|
Press Fit
|
|
|
6 Channel
|
|
30 A
|
60.5 mOhms
|
1200 V
|
- 10 V, 22 V
|
- 40 C
|
+ 175 C
|
|
|
Tube
|
|
|
|
MOSFET moduliai Automotive-grade ACEPACK DMT-32 power module, 3-phase four wire PFC topology, 1200 V, 84 mOhm typ. SiC Power MOSFET with rectifier diode and NTC
- M2TP80M12W2-2LA
- STMicroelectronics
-
1:
42,36 €
-
127Prieinamumas
-
Naujas Produktas
|
„Mouser“ Dalies Nr.
511-M2TP80M12W2-2LA
Naujas Produktas
|
STMicroelectronics
|
MOSFET moduliai Automotive-grade ACEPACK DMT-32 power module, 3-phase four wire PFC topology, 1200 V, 84 mOhm typ. SiC Power MOSFET with rectifier diode and NTC
|
|
127Prieinamumas
|
|
Min.: 1
Daugkart.: 1
|
|
|
|
Press Fit
|
|
|
6 Channel
|
1.2 kV
|
30 A
|
114 mOhms
|
- 10 V, + 22 V
|
5 V
|
- 40 C
|
+ 175 C
|
|
|
Tube
|
|
|
|
MOSFET moduliai MOSFET MOS7 500 V 10 Ohm SOT-227
Microchip Technology APT5010JLL
- APT5010JLL
- Microchip Technology
-
1:
32,18 €
-
16Prieinamumas
|
„Mouser“ Dalies Nr.
494-APT5010JLL
|
Microchip Technology
|
MOSFET moduliai MOSFET MOS7 500 V 10 Ohm SOT-227
|
|
16Prieinamumas
|
|
Min.: 1
Daugkart.: 1
|
|
|
Si
|
Screw Mount
|
SOT-227-4
|
N-Channel
|
1 Channel
|
|
41 A
|
100 mOhms
|
- 30 V, + 30 V
|
|
- 55 C
|
+ 150 C
|
378 W
|
|
Tube
|
|
|
|
MOSFET moduliai MOSFET MOS8 600 V 80 A SOT-227
Microchip Technology APT80M60J
- APT80M60J
- Microchip Technology
-
1:
44,92 €
-
9Prieinamumas
|
„Mouser“ Dalies Nr.
494-APT80M60J
|
Microchip Technology
|
MOSFET moduliai MOSFET MOS8 600 V 80 A SOT-227
|
|
9Prieinamumas
|
|
Min.: 1
Daugkart.: 1
|
|
|
Si
|
Screw Mount
|
|
|
|
|
|
|
- 30 V, + 30 V
|
|
- 55 C
|
+ 150 C
|
|
|
Tube
|
|
|
|
MOSFET moduliai PM-MOSFET-OTHER-SP3X
- MSCM20XM10T3XG
- Microchip Technology
-
1:
172,50 €
-
5Prieinamumas
|
„Mouser“ Dalies Nr.
494-MSCM20XM10T3XG
|
Microchip Technology
|
MOSFET moduliai PM-MOSFET-OTHER-SP3X
|
|
5Prieinamumas
|
|
Min.: 1
Daugkart.: 1
|
|
|
Si
|
|
|
|
|
|
|
10 mOhms
|
|
|
- 40 C
|
+ 125 C
|
|
|
Tube
|
|
|
|
MOSFET moduliai PM-MOSFET-7-SOT227
- APT50M75JLLU2
- Microchip Technology
-
1:
25,13 €
-
36Prieinamumas
|
„Mouser“ Dalies Nr.
494-APT50M75JLLU2
|
Microchip Technology
|
MOSFET moduliai PM-MOSFET-7-SOT227
|
|
36Prieinamumas
|
|
Min.: 1
Daugkart.: 1
|
|
|
Si
|
Screw Mount
|
SOT-227-4
|
N-Channel
|
1 Channel
|
500 V
|
51 A
|
75 mOhms
|
- 30 V, + 30 V
|
3 V
|
- 55 C
|
+ 150 C
|
290 W
|
|
Tube
|
|
|
|
MOSFET moduliai PM-MOSFET-FREDFET-8-SP1
- APTM50H15FT1G
- Microchip Technology
-
1:
50,90 €
-
14Prieinamumas
|
„Mouser“ Dalies Nr.
494-APTM50H15FT1G
|
Microchip Technology
|
MOSFET moduliai PM-MOSFET-FREDFET-8-SP1
|
|
14Prieinamumas
|
|
Min.: 1
Daugkart.: 1
|
|
|
Si
|
Screw Mount
|
SP1-12
|
N-Channel
|
|
|
25 A
|
130 mOhms
|
- 30 V, + 30 V
|
3 V
|
- 40 C
|
+ 100 C
|
208 W
|
|
Tube
|
|
|
|
MOSFET moduliai PM-MOSFET-FREDFET-7-SP3F
Microchip Technology APTM50HM65FT3G
- APTM50HM65FT3G
- Microchip Technology
-
1:
103,70 €
-
8Prieinamumas
|
„Mouser“ Dalies Nr.
494-APTM50HM65FT3G
|
Microchip Technology
|
MOSFET moduliai PM-MOSFET-FREDFET-7-SP3F
|
|
8Prieinamumas
|
|
Min.: 1
Daugkart.: 1
|
|
|
Si
|
Screw Mount
|
|
|
|
|
|
|
- 30 V, + 30 V
|
|
- 40 C
|
+ 125 C
|
|
APTM50HM65FT
|
Tube
|
|
|
|
MOSFET moduliai 200V 3mohm 340A Ultra Junction X4-Class Power MOSFET in SOT-227B
- IXTN400N20X4
- IXYS
-
1:
31,73 €
-
328Prieinamumas
-
Naujas Produktas
|
„Mouser“ Dalies Nr.
747-IXTN400N20X4
Naujas Produktas
|
IXYS
|
MOSFET moduliai 200V 3mohm 340A Ultra Junction X4-Class Power MOSFET in SOT-227B
|
|
328Prieinamumas
|
|
|
31,73 €
|
|
|
25,00 €
|
|
|
23,27 €
|
|
|
20,68 €
|
|
Min.: 1
Daugkart.: 1
|
|
|
Si
|
Screw Mount
|
SOT-227B-4
|
N-Channel
|
1 Channel
|
200 V
|
1.1 kA
|
3 mOhms
|
- 30 V, + 30 V
|
4.5 V
|
- 55 C
|
+ 175 C
|
830 W
|
X4-Class
|
Tube
|
|
|
|
MOSFET moduliai Automotive-grade ACEPACK DMT-32 power module, 1200 V, 47.5 mOhm SiC MOSFET NTC
- M1P45M12W2-1LA
- STMicroelectronics
-
1:
48,42 €
-
123Prieinamumas
-
Naujas Produktas
|
„Mouser“ Dalies Nr.
511-M1P45M12W2-1LA
Naujas Produktas
|
STMicroelectronics
|
MOSFET moduliai Automotive-grade ACEPACK DMT-32 power module, 1200 V, 47.5 mOhm SiC MOSFET NTC
|
|
123Prieinamumas
|
|
Min.: 1
Daugkart.: 1
|
|
|
SiC
|
Press Fit
|
ACEPACK DMT-32
|
|
6 Channel
|
1.2 kV
|
30 A
|
60.5 mOhms
|
- 10 V, + 22 V
|
5 V
|
- 40 C
|
+ 175 C
|
|
|
Tube
|
|
|
|
MOSFET moduliai SLLIMM 2nd series IPM, 3-phase inverter 0.15 Ohm typ., 15 A, 600 V Power MOSFET
- STIB1560DM2-Z
- STMicroelectronics
-
1:
14,99 €
-
157Prieinamumas
-
Naujas Produktas
|
„Mouser“ Dalies Nr.
511-STIB1560DM2-Z
Naujas Produktas
|
STMicroelectronics
|
MOSFET moduliai SLLIMM 2nd series IPM, 3-phase inverter 0.15 Ohm typ., 15 A, 600 V Power MOSFET
|
|
157Prieinamumas
|
|
|
14,99 €
|
|
|
11,12 €
|
|
|
11,11 €
|
|
|
9,98 €
|
|
Min.: 1
Daugkart.: 1
|
|
|
Si
|
Press Fit
|
SDIP2B-26
|
N-Channel
|
|
600 V
|
17 A
|
170 mOhms
|
|
|
- 40 C
|
+ 150 C
|
113 W
|
|
Tube
|
|
|
|
MOSFET moduliai SIC A1HPM 1200 V
- NVVR26A120M1WSB
- onsemi
-
1:
375,98 €
-
24Prieinamumas
-
Naujas Produktas
|
„Mouser“ Dalies Nr.
863-NVVR26A120M1WSB
Naujas Produktas
|
onsemi
|
MOSFET moduliai SIC A1HPM 1200 V
|
|
24Prieinamumas
|
|
Min.: 1
Daugkart.: 1
|
|
|
SiC
|
Screw Mount
|
AHPM-15
|
N-Channel
|
2 Channel
|
1.2 kV
|
400 A
|
|
- 10 V, + 25 V
|
3.2 V
|
- 40 C
|
+ 175 C
|
1 kW
|
|
Tube
|
|
|
|
MOSFET moduliai Automotive-grade ACEPACK DMT-32 power module, fourpack topology, 1200V 47.5 mOhm
- M1F45M12W2-1LA
- STMicroelectronics
-
1:
42,36 €
-
519Prieinamumas
|
„Mouser“ Dalies Nr.
511-M1F45M12W2-1LA
|
STMicroelectronics
|
MOSFET moduliai Automotive-grade ACEPACK DMT-32 power module, fourpack topology, 1200V 47.5 mOhm
|
|
519Prieinamumas
|
|
Min.: 1
Daugkart.: 1
|
|
|
SiC
|
SMD/SMT
|
|
N-Channel
|
|
1.2 kV
|
30 A
|
7.5 mOhms
|
- 5 V, + 18 V
|
1.9 V
|
- 40 C
|
+ 175 C
|
|
|
Tube
|
|
|
|
MOSFET moduliai APM32 SIC POWER MODULE
- NVXK2VR40WXT2
- onsemi
-
1:
71,71 €
-
573Prieinamumas
-
"Mouser Naujiena"
|
„Mouser“ Dalies Nr.
863-NVXK2VR40WXT2
"Mouser Naujiena"
|
onsemi
|
MOSFET moduliai APM32 SIC POWER MODULE
|
|
573Prieinamumas
|
|
Min.: 1
Daugkart.: 1
|
|
|
SiC
|
Through Hole
|
APM-32
|
N-Channel
|
6 Channel
|
1.2 kV
|
55 A
|
59 mOhms
|
- 15 V, + 25 V
|
4.3 V
|
- 55 C
|
+ 175 C
|
319 W
|
NVXK2VR40WXT2
|
Tube
|
|
|
|
MOSFET moduliai APM17-MDC MV7 80V AL2O3 2 PHASE
- NXV08H300DT1
- onsemi
-
1:
68,19 €
-
30Prieinamumas
|
„Mouser“ Dalies Nr.
863-NXV08H300DT1
|
onsemi
|
MOSFET moduliai APM17-MDC MV7 80V AL2O3 2 PHASE
|
|
30Prieinamumas
|
|
|
68,19 €
|
|
|
54,57 €
|
|
|
51,66 €
|
|
Min.: 1
Daugkart.: 1
|
|
|
Si
|
Through Hole
|
APM-17
|
|
|
80 V
|
|
650 uOhms
|
- 20 V, + 20 V
|
2 V
|
- 40 C
|
+ 125 C
|
|
NXV08H300DT1
|
Tube
|
|