|
|
Igbt Moduliai 1200 V, 50 A PIM IGBT module
- FP50R12N2T7PB11BPSA1
- Infineon Technologies
-
1:
76,82 €
-
10Prieinamumas
|
„Mouser“ Dalies Nr.
726-FP50R12N2T7PB111
|
Infineon Technologies
|
Igbt Moduliai 1200 V, 50 A PIM IGBT module
|
|
10Prieinamumas
|
|
|
76,82 €
|
|
|
62,03 €
|
|
|
58,88 €
|
|
Min.: 1
Daugkart.: 1
|
|
|
IGBT Silicon Modules
|
3-Phase Inverter
|
1.2 kV
|
1.5 V
|
50 A
|
100 nA
|
|
|
- 40 C
|
+ 175 C
|
Tray
|
|
|
|
Igbt Moduliai LOW POWER ECONO
- FS150R12N2T7B15BPSA1
- Infineon Technologies
-
1:
88,39 €
-
16Prieinamumas
|
„Mouser“ Dalies Nr.
726-FS150R12N2T7B15B
|
Infineon Technologies
|
Igbt Moduliai LOW POWER ECONO
|
|
16Prieinamumas
|
|
Min.: 1
Daugkart.: 1
|
|
|
IGBT Silicon Modules
|
6-Pack
|
1.2 kV
|
1.55 V
|
150 A
|
100 nA
|
|
|
- 40 C
|
+ 175 C
|
Tray
|
|
|
|
Igbt Moduliai 950 V 400 A EasyPACK module with TRENCHSTOP IGBT7 and CoolSiC Schottky diode
- FS3L400R10W3S7FB11BPSA1
- Infineon Technologies
-
1:
148,91 €
-
23Prieinamumas
|
„Mouser“ Dalies Nr.
726-3L400R10W3S7FB11
|
Infineon Technologies
|
Igbt Moduliai 950 V 400 A EasyPACK module with TRENCHSTOP IGBT7 and CoolSiC Schottky diode
|
|
23Prieinamumas
|
|
Min.: 1
Daugkart.: 1
|
|
|
IGBT Silicon Modules
|
|
1.23 V
|
|
200 A
|
|
|
|
- 40 C
|
+ 125 C
|
Tray
|
|
|
|
Igbt Moduliai SLLIMM nano IPM, 3 A, 600 V, 3-phase inverter bridge IGBT
- STGIPN3H60AT
- STMicroelectronics
-
1:
6,82 €
-
367Prieinamumas
|
„Mouser“ Dalies Nr.
511-STGIPN3H60AT
|
STMicroelectronics
|
Igbt Moduliai SLLIMM nano IPM, 3 A, 600 V, 3-phase inverter bridge IGBT
|
|
367Prieinamumas
|
|
|
6,82 €
|
|
|
4,50 €
|
|
|
3,57 €
|
|
|
3,44 €
|
|
Min.: 1
Daugkart.: 1
|
|
|
IGBT Silicon Modules
|
3-Phase Inverter
|
600 V
|
2.15 V
|
3 A
|
|
8 W
|
NDIP-26
|
- 40 C
|
+ 125 C
|
Bulk
|
|
|
|
Igbt Moduliai SLLIMM nano IPM 3A 600V 3-Phase IGBT
- STGIPN3H60A
- STMicroelectronics
-
1:
6,96 €
-
467Prieinamumas
|
„Mouser“ Dalies Nr.
511-STGIPN3H60A
|
STMicroelectronics
|
Igbt Moduliai SLLIMM nano IPM 3A 600V 3-Phase IGBT
|
|
467Prieinamumas
|
|
|
6,96 €
|
|
|
4,54 €
|
|
|
3,90 €
|
|
|
3,51 €
|
|
Min.: 1
Daugkart.: 1
|
|
|
IGBT Modules
|
3-Phase Inverter
|
600 V
|
2.15 V
|
3 A
|
|
8 W
|
NDIP-26
|
- 40 C
|
+ 125 C
|
Tube
|
|
|
|
Igbt Moduliai 1200 V, 50 A PIM IGBT module
- FP50R12W2T7BPSA1
- Infineon Technologies
-
1:
44,31 €
-
26Prieinamumas
|
„Mouser“ Dalies Nr.
726-FP50R12W2T7BPSA1
|
Infineon Technologies
|
Igbt Moduliai 1200 V, 50 A PIM IGBT module
|
|
26Prieinamumas
|
|
Min.: 1
Daugkart.: 1
|
|
|
IGBT Silicon Modules
|
3-Phase Inverter
|
1.2 kV
|
1.5 V
|
50 A
|
100 nA
|
|
|
- 40 C
|
+ 175 C
|
Tray
|
|
|
|
Igbt Moduliai SLLIMM 2nd,3phs 600V shrt-crct
- STGIF10CH60TS-L
- STMicroelectronics
-
1:
11,32 €
-
97Prieinamumas
|
„Mouser“ Dalies Nr.
511-STGIF10CH60TS-L
|
STMicroelectronics
|
Igbt Moduliai SLLIMM 2nd,3phs 600V shrt-crct
|
|
97Prieinamumas
|
|
|
11,32 €
|
|
|
7,64 €
|
|
|
6,48 €
|
|
Min.: 1
Daugkart.: 1
|
|
|
IGBT Modules
|
3-Phase Inverter
|
600 V
|
1.6 V
|
10 A
|
|
26 W
|
SDIP2F-26
|
- 40 C
|
+ 125 C
|
Bulk
|
|
|
|
Igbt Moduliai SLLIMM 2nd series IPM, 3-phase inverter, 12 A, 600 V short-circuit rugged IGBTs
- STGIB8CH60TS-L
- STMicroelectronics
-
1:
11,64 €
-
105Prieinamumas
|
„Mouser“ Dalies Nr.
511-STGIB8CH60TS-L
|
STMicroelectronics
|
Igbt Moduliai SLLIMM 2nd series IPM, 3-phase inverter, 12 A, 600 V short-circuit rugged IGBTs
|
|
105Prieinamumas
|
|
|
11,64 €
|
|
|
8,15 €
|
|
|
6,72 €
|
|
Min.: 1
Daugkart.: 1
|
|
|
IGBT Modules
|
3-Phase Inverter
|
600 V
|
1.91 V
|
12 A
|
|
50 W
|
SDIP2B-26
|
- 40 C
|
+ 125 C
|
Tube
|
|
|
|
Igbt Moduliai AUTOMOTIVE 750V 640A SSDC POWER MODULE PIN FIN BASE PLATE
- NVH640S75L4SPC
- onsemi
-
1:
508,08 €
-
4Prieinamumas
|
„Mouser“ Dalies Nr.
863-NVH640S75L4SPC
|
onsemi
|
Igbt Moduliai AUTOMOTIVE 750V 640A SSDC POWER MODULE PIN FIN BASE PLATE
|
|
4Prieinamumas
|
|
Min.: 1
Daugkart.: 1
|
|
|
Power Modules
|
|
750 V
|
1.45 V
|
|
300 nA
|
|
SSDC-33
|
- 40 C
|
+ 175 C
|
Tray
|
|
|
|
Igbt Moduliai AUTOMOTIVE 750V 660A SSDC POWER MODULE FLAT BASE PLATE
- NVH660S75L4SPFB
- onsemi
-
1:
547,96 €
-
4Prieinamumas
|
„Mouser“ Dalies Nr.
863-NVH660S75L4SPFB
|
onsemi
|
Igbt Moduliai AUTOMOTIVE 750V 660A SSDC POWER MODULE FLAT BASE PLATE
|
|
4Prieinamumas
|
|
Min.: 1
Daugkart.: 1
|
|
|
Power Modules
|
|
750 V
|
1.21 V
|
|
300 nA
|
733 W
|
SSDC-33
|
- 40 C
|
+ 175 C
|
Tray
|
|
|
|
Igbt Moduliai AUTOMOTIVE 750V 660A SSDC POWER MODULE FLAT BASE PLATE
- NVH660S75L4SPFC
- onsemi
-
1:
547,96 €
-
4Prieinamumas
|
„Mouser“ Dalies Nr.
863-NVH660S75L4SPFC
|
onsemi
|
Igbt Moduliai AUTOMOTIVE 750V 660A SSDC POWER MODULE FLAT BASE PLATE
|
|
4Prieinamumas
|
|
Min.: 1
Daugkart.: 1
|
|
|
Power Modules
|
|
750 V
|
1.21 V
|
|
300 nA
|
733 W
|
SSDC-33
|
- 40 C
|
+ 175 C
|
Tray
|
|
|
|
Igbt Moduliai AUTOMOTIVE 750V 950A SSDC POWER MODULE
- NVH950S75L4SPC
- onsemi
-
1:
704,31 €
-
3Prieinamumas
|
„Mouser“ Dalies Nr.
863-NVH950S75L4SPC
|
onsemi
|
Igbt Moduliai AUTOMOTIVE 750V 950A SSDC POWER MODULE
|
|
3Prieinamumas
|
|
Min.: 1
Daugkart.: 1
|
|
|
Power Modules
|
|
750 V
|
1.4 V
|
|
300 nA
|
1.325 kW
|
SSDC-33
|
- 40 C
|
+ 175 C
|
Tray
|
|
|
|
Igbt Moduliai ACEPACK 2 converter inverter brake, 1200 V, 25 A trench gate field-stop IGBT M s
- A2C25S12M3
- STMicroelectronics
-
1:
50,41 €
-
33Prieinamumas
|
„Mouser“ Dalies Nr.
511-A2C25S12M3
|
STMicroelectronics
|
Igbt Moduliai ACEPACK 2 converter inverter brake, 1200 V, 25 A trench gate field-stop IGBT M s
|
|
33Prieinamumas
|
|
Min.: 1
Daugkart.: 1
|
|
|
IGBT Modules
|
3-Phase Inverter
|
1.2 kV
|
1.95 V
|
25 A
|
500 nA
|
197 W
|
ACEPACK2
|
- 40 C
|
+ 150 C
|
Tray
|
|
|
|
Igbt Moduliai 1200 V, 150 A sixpack IGBT module
- FS150R12N2T7B54BPSA1
- Infineon Technologies
-
1:
79,39 €
-
39Prieinamumas
|
„Mouser“ Dalies Nr.
726-FS150R12N2T7B54B
|
Infineon Technologies
|
Igbt Moduliai 1200 V, 150 A sixpack IGBT module
|
|
39Prieinamumas
|
|
|
79,39 €
|
|
|
77,58 €
|
|
|
73,83 €
|
|
Min.: 1
Daugkart.: 1
|
|
|
IGBT Silicon Modules
|
6-Pack
|
1.2 kV
|
1.55 V
|
150 A
|
100 nA
|
|
|
- 40 C
|
+ 175 C
|
Tray
|
|
|
|
Igbt Moduliai SLLIMM high power IPM, 3-phase inverter, 10 A, 1200 V short-circuit rugged IGBT
- STGIK10M120T
- STMicroelectronics
-
1:
36,89 €
-
69Prieinamumas
|
„Mouser“ Dalies Nr.
511-STGIK10M120T
|
STMicroelectronics
|
Igbt Moduliai SLLIMM high power IPM, 3-phase inverter, 10 A, 1200 V short-circuit rugged IGBT
|
|
69Prieinamumas
|
|
Min.: 1
Daugkart.: 1
|
|
|
IGBT Modules
|
3-Phase Inverter
|
1.2 kV
|
1.9 V
|
10 A
|
|
125 W
|
SDIPHP-30
|
- 40 C
|
+ 125 C
|
Tube
|
|
|
|
Igbt Moduliai 1200 V, 600 A dual IGBT module
- FF600R12ME4WB73BPSA1
- Infineon Technologies
-
1:
183,74 €
-
19Prieinamumas
|
„Mouser“ Dalies Nr.
726-FF600R12ME4WB73B
|
Infineon Technologies
|
Igbt Moduliai 1200 V, 600 A dual IGBT module
|
|
19Prieinamumas
|
|
Min.: 1
Daugkart.: 1
|
|
|
IGBT Silicon Modules
|
Dual
|
1.2 kV
|
1.75 V
|
995 A
|
400 nA
|
4.05 kW
|
|
- 40 C
|
+ 150 C
|
Tray
|
|
|
|
Igbt Moduliai 650 V, 50 A PIM IGBT module
- FB50R07W2E3B23BOMA1
- Infineon Technologies
-
1:
41,51 €
-
16Prieinamumas
|
„Mouser“ Dalies Nr.
726-FB50R07W2E3B23BO
|
Infineon Technologies
|
Igbt Moduliai 650 V, 50 A PIM IGBT module
|
|
16Prieinamumas
|
|
Min.: 1
Daugkart.: 1
|
|
|
|
|
650 V
|
1.6 V
|
|
100 nA
|
20 mW
|
Module
|
- 40 C
|
+ 150 C
|
Tray
|
|
|
|
Igbt Moduliai LOW POWER ECONO
- FP200R12N3T7B11BPSA1
- Infineon Technologies
-
1:
140,76 €
-
2Prieinamumas
|
„Mouser“ Dalies Nr.
726-FP200R12N3T7B11B
|
Infineon Technologies
|
Igbt Moduliai LOW POWER ECONO
|
|
2Prieinamumas
|
|
Min.: 1
Daugkart.: 1
|
|
|
IGBT Silicon Modules
|
3-Phase Inverter
|
1.2 kV
|
1.55 V
|
200 A
|
100 nA
|
|
|
- 40 C
|
+ 175 C
|
Tray
|
|
|
|
Igbt Moduliai 1200 V, 50 A PIM IGBT module
- FP50R12N2T7PBPSA1
- Infineon Technologies
-
1:
64,39 €
-
3Prieinamumas
|
„Mouser“ Dalies Nr.
726-FP50R12N2T7PBPSA
|
Infineon Technologies
|
Igbt Moduliai 1200 V, 50 A PIM IGBT module
|
|
3Prieinamumas
|
|
Min.: 1
Daugkart.: 1
|
|
|
IGBT Silicon Modules
|
3-Phase Inverter
|
1.2 kV
|
1.5 V
|
50 A
|
100 nA
|
|
|
- 40 C
|
+ 175 C
|
Tray
|
|
|
|
Igbt Moduliai 1200 V, 25 A 3-level IGBT module
- F3L25R12W1T4B27BOMA1
- Infineon Technologies
-
1:
28,50 €
-
305Prieinamumas
|
„Mouser“ Dalies Nr.
726-F3L25R12W1T4B27B
|
Infineon Technologies
|
Igbt Moduliai 1200 V, 25 A 3-level IGBT module
|
|
305Prieinamumas
|
|
Min.: 1
Daugkart.: 1
|
|
|
IGBT Silicon Modules
|
3-Phase Inverter
|
1.2 kV
|
1.85 V
|
25 A
|
100 nA
|
215 W
|
EasyPack1B
|
- 40 C
|
+ 150 C
|
Tray
|
|
|
|
Igbt Moduliai SLLIMM 2nd,3phs 10A,600V shrt-crct
- STGIB10CH60TS-L
- STMicroelectronics
-
1:
11,76 €
-
201Prieinamumas
|
„Mouser“ Dalies Nr.
511-STGIB10CH60TS-L
|
STMicroelectronics
|
Igbt Moduliai SLLIMM 2nd,3phs 10A,600V shrt-crct
|
|
201Prieinamumas
|
|
|
11,76 €
|
|
|
7,96 €
|
|
|
7,70 €
|
|
|
6,81 €
|
|
Min.: 1
Daugkart.: 1
|
|
|
IGBT Modules
|
3-Phase Inverter
|
600 V
|
1.6 V
|
10 A
|
|
60 W
|
SDIP2B-26
|
- 40 C
|
+ 125 C
|
Bulk
|
|
|
|
Igbt Moduliai SLLIMM 2nd,3phs 15A,600V shrt-crct
- STGIB15CH60TS-L
- STMicroelectronics
-
1:
11,78 €
-
493Prieinamumas
|
„Mouser“ Dalies Nr.
511-STGIB15CH60TS-L
|
STMicroelectronics
|
Igbt Moduliai SLLIMM 2nd,3phs 15A,600V shrt-crct
|
|
493Prieinamumas
|
|
|
11,78 €
|
|
|
7,96 €
|
|
|
6,82 €
|
|
Min.: 1
Daugkart.: 1
|
|
|
IGBT Modules
|
3-Phase Inverter
|
600 V
|
1.6 V
|
15 A
|
|
75 W
|
SDIP2B-26
|
- 40 C
|
+ 125 C
|
Bulk
|
|
|
|
Igbt Moduliai SLLIMM 2nd series IPM, 3-phase inverter, 25 A, 600 V short-circuit rugged IGBT
- STGIB20M60TS-L
- STMicroelectronics
-
1:
12,81 €
-
460Prieinamumas
|
„Mouser“ Dalies Nr.
511-STGIB20M60TS-L
|
STMicroelectronics
|
Igbt Moduliai SLLIMM 2nd series IPM, 3-phase inverter, 25 A, 600 V short-circuit rugged IGBT
|
|
460Prieinamumas
|
|
|
12,81 €
|
|
|
8,70 €
|
|
|
7,60 €
|
|
Min.: 1
Daugkart.: 1
|
|
|
IGBT Modules
|
3-Phase Inverter
|
600 V
|
1.75 V
|
25 A
|
|
107 W
|
SDIP2B-26
|
- 40 C
|
+ 125 C
|
Tube
|
|
|
|
Igbt Moduliai MEDIUM POWER ECONO
- FF600R12ME4B72BOSA1
- Infineon Technologies
-
1:
153,13 €
-
23Prieinamumas
-
40Pagal užsakymą
|
„Mouser“ Dalies Nr.
726-FF600R12ME4B72BO
|
Infineon Technologies
|
Igbt Moduliai MEDIUM POWER ECONO
|
|
23Prieinamumas
40Pagal užsakymą
Turime sandėlyje:
23 Galime išsiųsti iš karto
Pagal užsakymą:
10 Tikėtina 2026-04-30
10 Tikėtina 2026-05-28
20 Tikėtina 2026-10-08
Gamintojo numatytas pristatymo laikas
14 Savaičių
|
|
Min.: 1
Daugkart.: 1
|
|
|
IGBT Silicon Modules
|
Dual
|
1.2 kV
|
1.75 V
|
600 A
|
400 nA
|
|
152 mm x 62.5 mm x 20.8 mm
|
- 40 C
|
+ 150 C
|
Tray
|
|
|
|
Igbt Moduliai 1200 V, 150 A PIM IGBT module
- FP150R12N3T7B11BPSA1
- Infineon Technologies
-
1:
132,11 €
-
4Prieinamumas
|
„Mouser“ Dalies Nr.
726-FP150R12N3T7B11B
|
Infineon Technologies
|
Igbt Moduliai 1200 V, 150 A PIM IGBT module
|
|
4Prieinamumas
|
|
Min.: 1
Daugkart.: 1
|
|
|
IGBT Silicon Modules
|
3-Phase Inverter
|
1.2 kV
|
1.55 V
|
150 A
|
100 nA
|
|
|
- 40 C
|
+ 175 C
|
Tray
|
|