|
|
GaN FET EPC eGaN FET, 80 V, 3.6 milliohm at 5 V, LGA 3.5 x 1.95
- EPC2065
- EPC
-
1:
3,68 €
-
2 998Prieinamumas
-
"Mouser Naujiena"
|
„Mouser“ Dalies Nr.
65-EPC2065
"Mouser Naujiena"
|
EPC
|
GaN FET EPC eGaN FET, 80 V, 3.6 milliohm at 5 V, LGA 3.5 x 1.95
|
|
2 998Prieinamumas
|
|
|
3,68 €
|
|
|
2,44 €
|
|
|
1,73 €
|
|
|
1,58 €
|
|
|
1,34 €
|
|
Min.: 1
Daugkart.: 1
|
|
|
SMD/SMT
|
LGA-8
|
N-Channel
|
1 Channel
|
80 V
|
60 A
|
3.6 mOhms
|
6 V, - 4 V
|
2.5 V
|
9.4 nC
|
- 40 C
|
+ 150 C
|
Enhancement
|
eGaN FET
|
|
|
|
GaN FET EPC eGaN FET,40 V, 1.5 milliohm at 5 V, LGA 3.25 x 2.85
- EPC2067
- EPC
-
1:
4,53 €
-
1 998Prieinamumas
-
"Mouser Naujiena"
|
„Mouser“ Dalies Nr.
65-EPC2067
"Mouser Naujiena"
|
EPC
|
GaN FET EPC eGaN FET,40 V, 1.5 milliohm at 5 V, LGA 3.25 x 2.85
|
|
1 998Prieinamumas
|
|
|
4,53 €
|
|
|
3,29 €
|
|
|
2,37 €
|
|
|
2,30 €
|
|
|
1,96 €
|
|
Min.: 1
Daugkart.: 1
|
|
|
SMD/SMT
|
LGA-14
|
N-Channel
|
1 Channel
|
40 V
|
69 A
|
1.5 mOhms
|
6 V, - 4 V
|
2.5 V
|
17.1 nC
|
- 40 C
|
+ 150 C
|
Enhancement
|
eGaN FET
|
|
|
|
GaN FET EPC eGaN FET,100 V, 23 milliohm at 5 V, BGA 1.3 x 0.85
- EPC2070
- EPC
-
1:
1,51 €
-
4 084Prieinamumas
-
"Mouser Naujiena"
|
„Mouser“ Dalies Nr.
65-EPC2070
"Mouser Naujiena"
|
EPC
|
GaN FET EPC eGaN FET,100 V, 23 milliohm at 5 V, BGA 1.3 x 0.85
|
|
4 084Prieinamumas
|
|
|
1,51 €
|
|
|
0,963 €
|
|
|
0,642 €
|
|
|
0,507 €
|
|
|
0,416 €
|
|
|
Peržiūrėti
|
|
|
0,464 €
|
|
|
0,391 €
|
|
Min.: 1
Daugkart.: 1
|
|
|
SMD/SMT
|
BGA-6
|
N-Channel
|
1 Channel
|
100 V
|
1.7 A
|
23 mOhms
|
6 V, - 4 V
|
2.5 V
|
1.9 nC
|
- 40 C
|
+ 150 C
|
Enhancement
|
eGaN FET
|
|
|
|
GaN FET EPC eGaN Symetrical Half Bridge80 V, 5.5 milliohm at 5 V, BGA 6.05 x 2.3
- EPC2103
- EPC
-
1:
9,21 €
-
1 000Prieinamumas
-
"Mouser Naujiena"
|
„Mouser“ Dalies Nr.
65-EPC2103
"Mouser Naujiena"
|
EPC
|
GaN FET EPC eGaN Symetrical Half Bridge80 V, 5.5 milliohm at 5 V, BGA 6.05 x 2.3
|
|
1 000Prieinamumas
|
|
|
9,21 €
|
|
|
6,40 €
|
|
|
5,33 €
|
|
|
4,52 €
|
|
Min.: 1
Daugkart.: 1
|
|
|
SMD/SMT
|
Die
|
N-Channel
|
2-Channel
|
80 V
|
30 A
|
5.5 mOhms
|
6 V, - 4 V
|
2.5 V
|
6.5 nC, 6.5 nC
|
- 40 C
|
+ 150 C
|
Enhancement
|
eGaN FET
|
|
|
|
GaN FET EPC eGaN FET,80 V, 80 milliohm at 5 V, BGA 0.9 x 0.9
- EPC2203
- EPC
-
1:
1,26 €
-
12 479Prieinamumas
-
"Mouser Naujiena"
|
„Mouser“ Dalies Nr.
65-EPC2203
"Mouser Naujiena"
|
EPC
|
GaN FET EPC eGaN FET,80 V, 80 milliohm at 5 V, BGA 0.9 x 0.9
|
|
12 479Prieinamumas
|
|
|
1,26 €
|
|
|
0,80 €
|
|
|
0,531 €
|
|
|
0,417 €
|
|
|
0,339 €
|
|
|
Peržiūrėti
|
|
|
0,38 €
|
|
|
0,308 €
|
|
Min.: 1
Daugkart.: 1
|
|
|
SMD/SMT
|
BGA-4
|
N-Channel
|
1 Channel
|
80 V
|
1.7 A
|
80 mOhms
|
- 4 V, 5.75 V
|
2.5 V
|
670 pC
|
- 55 C
|
+ 150 C
|
Enhancement
|
eGaN FET
|
|
|
|
GaN FET EPC eGaN FET,15 V, 26 milliohm at 5 V, BGA 0.85 x 1.2
- EPC2216
- EPC
-
1:
1,72 €
-
4 960Prieinamumas
-
"Mouser Naujiena"
|
„Mouser“ Dalies Nr.
65-EPC2216
"Mouser Naujiena"
|
EPC
|
GaN FET EPC eGaN FET,15 V, 26 milliohm at 5 V, BGA 0.85 x 1.2
|
|
4 960Prieinamumas
|
|
|
1,72 €
|
|
|
1,10 €
|
|
|
0,741 €
|
|
|
0,589 €
|
|
|
0,543 €
|
|
|
0,469 €
|
|
Min.: 1
Daugkart.: 1
|
|
|
SMD/SMT
|
BGA-6
|
N-Channel
|
1 Channel
|
15 V
|
3.4 A
|
26 mOhms
|
6 V, - 4 V
|
2.5 V
|
0.87 nC
|
- 55 C
|
+ 150 C
|
Enhancement
|
eGaN FET
|
|
|
|
GaN FET EPC eGaN FET,40 V, 110 milliohm at 5 V, LGA 2.05 x 0.85
- EPC8004
- EPC
-
1:
3,69 €
-
2 412Prieinamumas
-
"Mouser Naujiena"
|
„Mouser“ Dalies Nr.
65-EPC8004
"Mouser Naujiena"
|
EPC
|
GaN FET EPC eGaN FET,40 V, 110 milliohm at 5 V, LGA 2.05 x 0.85
|
|
2 412Prieinamumas
|
|
|
3,69 €
|
|
|
2,43 €
|
|
|
1,72 €
|
|
|
1,57 €
|
|
|
1,49 €
|
|
|
1,33 €
|
|
Min.: 1
Daugkart.: 1
|
|
|
SMD/SMT
|
LGA-6
|
N-Channel
|
1 Channel
|
40 V
|
4 A
|
110 mOhms
|
6 V, - 4 V
|
2.5 V
|
370 pC
|
- 40 C
|
+ 150 C
|
Enhancement
|
eGaN FET
|
|
|
|
GaN FET EPC eGaN FET,65 V, 130 milliohm at 5 V, LGA 2.05 x 0.85
- EPC8009
- EPC
-
1:
3,96 €
-
2 500Prieinamumas
-
"Mouser Naujiena"
|
„Mouser“ Dalies Nr.
65-EPC8009
"Mouser Naujiena"
|
EPC
|
GaN FET EPC eGaN FET,65 V, 130 milliohm at 5 V, LGA 2.05 x 0.85
|
|
2 500Prieinamumas
|
|
|
3,96 €
|
|
|
2,62 €
|
|
|
1,86 €
|
|
|
1,73 €
|
|
|
1,63 €
|
|
|
1,47 €
|
|
Min.: 1
Daugkart.: 1
|
|
|
SMD/SMT
|
LGA-6
|
N-Channel
|
1 Channel
|
65 V
|
4 A
|
130 mOhms
|
6 V, - 4 V
|
2.5 V
|
370 pC
|
- 40 C
|
+ 150 C
|
Enhancement
|
eGaN FET
|
|
|
|
GaN FET EPC eGaN FET,100 V, 160 milliohm at 5 V, LGA 2.05 x 0.85
- EPC8010
- EPC
-
1:
2,65 €
-
4 990Prieinamumas
-
"Mouser Naujiena"
|
„Mouser“ Dalies Nr.
65-EPC8010
"Mouser Naujiena"
|
EPC
|
GaN FET EPC eGaN FET,100 V, 160 milliohm at 5 V, LGA 2.05 x 0.85
|
|
4 990Prieinamumas
|
|
|
2,65 €
|
|
|
1,72 €
|
|
|
1,20 €
|
|
|
1,01 €
|
|
|
0,963 €
|
|
|
0,85 €
|
|
Min.: 1
Daugkart.: 1
|
|
|
SMD/SMT
|
LGA-6
|
N-Channel
|
1 Channel
|
100 V
|
4 A
|
160 mOhms
|
6 V, - 4 V
|
2.5 V
|
360 pC
|
- 40 C
|
+ 150 C
|
Enhancement
|
eGaN FET
|
|
|
|
GaN FET EPC eGaN FET,100 V, 6 milliohm at 5 V, LGA 2.5 x 1.5
- EPC2204
- EPC
-
1:
2,77 €
-
20 000Tikėtina 2026-05-08
|
„Mouser“ Dalies Nr.
65-EPC2204
|
EPC
|
GaN FET EPC eGaN FET,100 V, 6 milliohm at 5 V, LGA 2.5 x 1.5
|
|
20 000Tikėtina 2026-05-08
|
|
|
2,77 €
|
|
|
1,81 €
|
|
|
1,26 €
|
|
|
1,07 €
|
|
|
1,02 €
|
|
|
0,906 €
|
|
Min.: 1
Daugkart.: 1
|
|
|
SMD/SMT
|
LGA-6
|
N-Channel
|
1 Channel
|
100 V
|
29 A
|
6 mOhms
|
6 V, - 4 V
|
2.5 V
|
5.7 nC
|
- 40 C
|
+ 150 C
|
Enhancement
|
eGaN FET
|
|
|
|
GaN FET EPC eGaN FET,100 V, 1.8 milliohm at 5 V, 3 mm x 5 mm QFN
- EPC2302
- EPC
-
1:
6,79 €
-
30 000Tikėtina 2026-05-08
-
"Mouser Naujiena"
|
„Mouser“ Dalies Nr.
65-EPC2302
"Mouser Naujiena"
|
EPC
|
GaN FET EPC eGaN FET,100 V, 1.8 milliohm at 5 V, 3 mm x 5 mm QFN
|
|
30 000Tikėtina 2026-05-08
|
|
|
6,79 €
|
|
|
4,70 €
|
|
|
3,62 €
|
|
|
3,41 €
|
|
|
3,16 €
|
|
Min.: 1
Daugkart.: 1
|
|
|
SMD/SMT
|
QFN-7
|
N-Channel
|
1 Channel
|
100 V
|
133 A
|
1.8 mOhms
|
6 V, - 4 V
|
2.5 V
|
23 nC
|
- 40 C
|
+ 150 C
|
Enhancement
|
eGaN FET
|
|
|
|
GaN FET EPC eGaN FET, 200 V, 5 milliohm at 5 V, 3 mm x 5 mm FCQFN
- EPC2304
- EPC
-
1:
7,22 €
-
15 000Tikėtina 2026-04-20
-
"Mouser Naujiena"
|
„Mouser“ Dalies Nr.
65-EPC2304
"Mouser Naujiena"
|
EPC
|
GaN FET EPC eGaN FET, 200 V, 5 milliohm at 5 V, 3 mm x 5 mm FCQFN
|
|
15 000Tikėtina 2026-04-20
|
|
|
7,22 €
|
|
|
4,96 €
|
|
|
3,89 €
|
|
|
3,66 €
|
|
|
3,30 €
|
|
Min.: 1
Daugkart.: 1
|
|
|
SMD/SMT
|
FCQFN-7
|
N-Channel
|
1 Channel
|
200 V
|
133 A
|
5 mOhms
|
6 V, - 4 V
|
2.5 V
|
21 nC
|
- 40 C
|
+ 150 C
|
Enhancement
|
eGaN FET
|
|
|
|
GaN FET EPC eGaN FET,80 V, 1.0 milliohm at 5 V, 3 mm x 5 mm QFN
- EPC2361
- EPC
-
1:
7,29 €
-
15 000Tikėtina 2026-05-08
-
"Mouser Naujiena"
|
„Mouser“ Dalies Nr.
65-EPC2361
"Mouser Naujiena"
|
EPC
|
GaN FET EPC eGaN FET,80 V, 1.0 milliohm at 5 V, 3 mm x 5 mm QFN
|
|
15 000Tikėtina 2026-05-08
|
|
|
7,29 €
|
|
|
5,01 €
|
|
|
3,92 €
|
|
|
3,69 €
|
|
|
3,33 €
|
|
Min.: 1
Daugkart.: 1
|
|
|
SMD/SMT
|
QFN-7
|
N-Channel
|
1 Channel
|
80 V
|
133 A
|
1 mOhms
|
6 V, - 4 V
|
2.5 V
|
28 nC
|
- 40 C
|
+ 150 C
|
Enhancement
|
eGaN FET
|
|
|
|
GaN FET EPC eGaN FET,100 V, 1.2 milliohm at 5 V(typ), 3.3 mm x 3.3 mm QFN
- EPC2367
- EPC
-
1:
5,93 €
-
15 000Tikėtina 2026-05-08
-
Naujas Produktas
|
„Mouser“ Dalies Nr.
65-EPC2367
Naujas Produktas
|
EPC
|
GaN FET EPC eGaN FET,100 V, 1.2 milliohm at 5 V(typ), 3.3 mm x 3.3 mm QFN
|
|
15 000Tikėtina 2026-05-08
|
|
|
5,93 €
|
|
|
4,00 €
|
|
|
2,97 €
|
|
|
2,80 €
|
|
|
2,52 €
|
|
Min.: 1
Daugkart.: 1
|
|
|
SMD/SMT
|
QFN-5
|
N-Channel
|
1 Channel
|
100 V
|
101 A
|
1.2 mOhms
|
6 V, - 4 V
|
2.5 V
|
17 nC
|
- 40 C
|
+ 150 C
|
Enhancement
|
eGaN FET
|
|
|
|
GaN FET EPC eGaN FET,200 V, 100 milliohm at 5 V, LGA 1.7 x 0.9
- EPC2012C
- EPC
-
1:
3,19 €
-
7 500Tikėtina 2026-04-20
|
„Mouser“ Dalies Nr.
65-EPC2012C
|
EPC
|
GaN FET EPC eGaN FET,200 V, 100 milliohm at 5 V, LGA 1.7 x 0.9
|
|
7 500Tikėtina 2026-04-20
|
|
|
3,19 €
|
|
|
2,10 €
|
|
|
1,47 €
|
|
|
1,29 €
|
|
|
1,24 €
|
|
|
1,10 €
|
|
Min.: 1
Daugkart.: 1
|
|
|
SMD/SMT
|
LGA-4
|
N-Channel
|
1 Channel
|
200 V
|
5 A
|
100 mOhms
|
6 V, - 4 V
|
2.5 V
|
1 nC
|
- 40 C
|
+ 150 C
|
Enhancement
|
eGaN FET
|
|
|
|
GaN FET EPC eGaN FET,40 V, 1.1 milliohm at 5 V, LGA 6.05 X 2.3
- EPC2066
- EPC
-
1:
6,34 €
-
3 000Tikėtina 2026-05-08
|
„Mouser“ Dalies Nr.
65-EPC2066
|
EPC
|
GaN FET EPC eGaN FET,40 V, 1.1 milliohm at 5 V, LGA 6.05 X 2.3
|
|
3 000Tikėtina 2026-05-08
|
|
|
6,34 €
|
|
|
4,35 €
|
|
|
3,29 €
|
|
|
2,80 €
|
|
Min.: 1
Daugkart.: 1
|
|
|
SMD/SMT
|
LGA-30
|
N-Channel
|
1 Channel
|
40 V
|
90 A
|
1.1 mOhms
|
6 V, - 4 V
|
2.5 V
|
25 nC
|
- 40 C
|
+ 150 C
|
Enhancement
|
eGaN FET
|
|
|
|
GaN FET EPC eGaN FET,100 V, 3.2 milliohm at 5 V, LGA 3.5 x 2.0
- EPC2088
- EPC
-
1:
4,49 €
-
4 998Prieinamumas
-
"Mouser Naujiena"
|
„Mouser“ Dalies Nr.
65-EPC2088
"Mouser Naujiena"
|
EPC
|
GaN FET EPC eGaN FET,100 V, 3.2 milliohm at 5 V, LGA 3.5 x 2.0
|
|
4 998Prieinamumas
|
|
|
4,49 €
|
|
|
2,98 €
|
|
|
2,13 €
|
|
|
2,05 €
|
|
|
1,73 €
|
|
Min.: 1
Daugkart.: 1
|
|
|
SMD/SMT
|
LGA-8
|
N-Channel
|
1 Channel
|
100 V
|
60 A
|
3.2 mOhms
|
6 V, - 4 V
|
2.5 V
|
12.5 nC
|
- 40 C
|
+ 150 C
|
Enhancement
|
eGaN FET
|
|
|
|
GaN FET EPC eGaN Dual FET,100 V, 70 milliohm at 5 V, BGA 1.35 x 1.35
- EPC2106
- EPC
-
1:
2,29 €
-
2 500Tikėtina 2026-05-08
-
"Mouser Naujiena"
|
„Mouser“ Dalies Nr.
65-EPC2106
"Mouser Naujiena"
|
EPC
|
GaN FET EPC eGaN Dual FET,100 V, 70 milliohm at 5 V, BGA 1.35 x 1.35
|
|
2 500Tikėtina 2026-05-08
|
|
|
2,29 €
|
|
|
1,47 €
|
|
|
1,01 €
|
|
|
0,816 €
|
|
|
0,797 €
|
|
|
0,693 €
|
|
Min.: 1
Daugkart.: 1
|
|
|
SMD/SMT
|
BGA-9
|
N-Channel
|
2 Channel
|
100 V
|
1.7 A
|
70 mOhms
|
6 V, - 4 V
|
2.5 V
|
730 pC, 730 pC
|
- 40 C
|
+ 150 C
|
Enhancement
|
eGaN FET
|
|
|
|
GaN FET EPC eGaN FET,100 V, 6 milliohm at 5 V, LGA 2.5 x 1.5
- EPC2204A
- EPC
-
1:
3,17 €
-
2 500Tikėtina 2026-04-20
|
„Mouser“ Dalies Nr.
65-EPC2204A
|
EPC
|
GaN FET EPC eGaN FET,100 V, 6 milliohm at 5 V, LGA 2.5 x 1.5
|
|
2 500Tikėtina 2026-04-20
|
|
|
3,17 €
|
|
|
2,08 €
|
|
|
1,45 €
|
|
|
1,28 €
|
|
|
1,23 €
|
|
|
1,09 €
|
|
Min.: 1
Daugkart.: 1
|
|
|
SMD/SMT
|
LGA-6
|
N-Channel
|
1 Channel
|
100 V
|
29 A
|
6 mOhms
|
6 V, - 4 V
|
2.5 V
|
5.7 nC
|
- 55 C
|
+ 150 C
|
Enhancement
|
eGaN FET
|
|
|
|
GaN FET EPC eGaN FET,200 V, 22 milliohm at 5 V, LGA 3.5 x 2.0
- EPC2207
- EPC
-
1:
2,74 €
-
7 500Tikėtina 2026-04-20
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"Mouser Naujiena"
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„Mouser“ Dalies Nr.
65-EPC2207
"Mouser Naujiena"
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EPC
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GaN FET EPC eGaN FET,200 V, 22 milliohm at 5 V, LGA 3.5 x 2.0
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7 500Tikėtina 2026-04-20
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2,74 €
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1,79 €
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1,25 €
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|
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1,06 €
|
|
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1,03 €
|
|
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0,894 €
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Min.: 1
Daugkart.: 1
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SMD/SMT
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LGA-6
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N-Channel
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1 Channel
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200 V
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14 A
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22 mOhms
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6 V, - 4 V
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2.5 V
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4.5 nC
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- 40 C
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+ 150 C
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Enhancement
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eGaN FET
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GaN FET EPC eGaN FET, 80 V, 20 milliohm at 5 V, BGA 1.35 x 1.35
- EPC2214
- EPC
-
1:
2,15 €
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12 500Tikėtina 2026-04-20
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„Mouser“ Dalies Nr.
65-EPC2214
|
EPC
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GaN FET EPC eGaN FET, 80 V, 20 milliohm at 5 V, BGA 1.35 x 1.35
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12 500Tikėtina 2026-04-20
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2,15 €
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1,38 €
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0,946 €
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0,759 €
|
|
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0,729 €
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0,637 €
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Min.: 1
Daugkart.: 1
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SMD/SMT
|
BGA-9
|
N-Channel
|
1 Channel
|
80 V
|
10 A
|
20 mOhms
|
6 V, - 4 V
|
2.5 V
|
1.8 nC
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- 55 C
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+ 150 C
|
Enhancement
|
eGaN FET
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GaN FET EPC eGaN FET,60 V, 2.6 milliohm at 5 V, BGA 4.6 x 2.6
- EPC2031
- EPC
-
2 500:
3,26 €
-
Ne Sandėlyje Esančių Prekių Pristatymo Laikas 18 Savaičių
|
„Mouser“ Dalies Nr.
65-EPC2031
|
EPC
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GaN FET EPC eGaN FET,60 V, 2.6 milliohm at 5 V, BGA 4.6 x 2.6
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Ne Sandėlyje Esančių Prekių Pristatymo Laikas 18 Savaičių
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Min.: 2 500
Daugkart.: 500
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SMD/SMT
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BGA-24
|
N-Channel
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1
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60 V
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48 A
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2.6 mOhms
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6 V, - 4 V
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2.5 V
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16 nC
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- 40 C
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+ 150
|
Enhancement
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eGaN FET
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GaN FET EPC eGaN FET,100 V, 10.5 milliohm at 5 V, CuPillar 2.15 x 1.25
- EPC2044
- EPC
-
12 500:
0,627 €
-
Ne Sandėlyje Esančių Prekių Pristatymo Laikas 18 Savaičių
|
„Mouser“ Dalies Nr.
65-EPC2044
|
EPC
|
GaN FET EPC eGaN FET,100 V, 10.5 milliohm at 5 V, CuPillar 2.15 x 1.25
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Ne Sandėlyje Esančių Prekių Pristatymo Laikas 18 Savaičių
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Min.: 12 500
Daugkart.: 2 500
|
|
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SMD/SMT
|
Die
|
N-Channel
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1
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100 V
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9.4 A
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10.5 mOhms
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6 V, - 4 V
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2.5 V
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4.3 nC
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- 40 C
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+ 150
|
Enhancement
|
eGaN FET
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GaN FET EPC eGaN FET,40 V, 2.25 milliohm at 5 V, LGA 3.25 x 3.25
- EPC2069
- EPC
-
5 000:
1,34 €
-
Ne Sandėlyje Esančių Prekių Pristatymo Laikas 18 Savaičių
|
„Mouser“ Dalies Nr.
65-EPC2069
|
EPC
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GaN FET EPC eGaN FET,40 V, 2.25 milliohm at 5 V, LGA 3.25 x 3.25
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Ne Sandėlyje Esančių Prekių Pristatymo Laikas 18 Savaičių
|
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Min.: 5 000
Daugkart.: 1 000
|
|
|
SMD/SMT
|
LGA-16
|
N-Channel
|
1
|
40 V
|
80 A
|
2.25 mOhms
|
6 V, - 4 V
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2.5 V
|
12.5 nC
|
- 40 C
|
+ 150
|
Enhancement
|
eGaN FET
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GaN FET 100 V eGaN FET, 3.2 mohm Rdson, 3.725 mm x 1.45 mm, Cu pillar CSP
- EPC2092
- EPC
-
5 000:
2,07 €
-
Ne Sandėlyje Esančių Prekių Pristatymo Laikas 18 Savaičių
-
Naujas Produktas
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„Mouser“ Dalies Nr.
65-EPC2092
Naujas Produktas
|
EPC
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GaN FET 100 V eGaN FET, 3.2 mohm Rdson, 3.725 mm x 1.45 mm, Cu pillar CSP
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Ne Sandėlyje Esančių Prekių Pristatymo Laikas 18 Savaičių
|
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Min.: 5 000
Daugkart.: 1 000
|
|
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SMD/SMT
|
|
N - Channel
|
1 Channel
|
100 V
|
69 A
|
3.2 mOhms
|
6 V, - 4 V
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2.5 V
|
12 nC
|
- 40 C
|
+ 150 C
|
Enhancement
|
eGaN FET
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