|
|
SiC MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 16 mOhm typ., 112 A in an H2PAK-7 package
- SCT016H120G3AG
- STMicroelectronics
-
1:
20,05 €
-
874Prieinamumas
-
Naujas Produktas
|
„Mouser“ Dalies Nr.
511-SCT016H120G3AG
Naujas Produktas
|
STMicroelectronics
|
SiC MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 16 mOhm typ., 112 A in an H2PAK-7 package
|
|
874Prieinamumas
|
|
|
20,05 €
|
|
|
14,51 €
|
|
|
14,48 €
|
|
|
14,47 €
|
|
|
13,52 €
|
|
Min.: 1
Daugkart.: 1
|
|
|
SMD/SMT
|
H2PAK-7
|
N-Channel
|
1 Channel
|
1.2 kV
|
112 A
|
22 mOhms
|
- 10 V, + 22 V
|
3 V
|
150 nC
|
- 55 C
|
+ 175 C
|
652 W
|
Enhancement
|
AEC-Q101
|
|
|
|
SiC MOSFET Automotive-grade silicon carbide Power MOSFET 650 V, 29 mOhm typ., 60 A in an H2PAK-7 package
- SCT027H65G3AG
- STMicroelectronics
-
1:
10,90 €
-
1 082Prieinamumas
-
Naujas Produktas
|
„Mouser“ Dalies Nr.
511-SCT027H65G3AG
Naujas Produktas
|
STMicroelectronics
|
SiC MOSFET Automotive-grade silicon carbide Power MOSFET 650 V, 29 mOhm typ., 60 A in an H2PAK-7 package
|
|
1 082Prieinamumas
|
|
|
10,90 €
|
|
|
7,64 €
|
|
|
6,64 €
|
|
|
6,20 €
|
|
Min.: 1
Daugkart.: 1
|
|
|
SMD/SMT
|
H2PAK-7
|
N-Channel
|
1 Channel
|
650 V
|
60 A
|
39.3 mOhms
|
- 10 V, + 22 V
|
3 V
|
48.6 nC
|
- 55 C
|
+ 175 C
|
300 W
|
Enhancement
|
AEC-Q101
|
|
|
|
SiC MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 27 mOhm typ., 55 A in an H2PAK-7 package
- SCT025H120G3AG
- STMicroelectronics
-
1:
14,76 €
-
9Prieinamumas
-
2 000Tikėtina 2026-10-12
-
Naujas Produktas
|
„Mouser“ Dalies Nr.
511-SCT025H120G3AG
Naujas Produktas
|
STMicroelectronics
|
SiC MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 27 mOhm typ., 55 A in an H2PAK-7 package
|
|
9Prieinamumas
2 000Tikėtina 2026-10-12
|
|
|
14,76 €
|
|
|
10,47 €
|
|
|
9,78 €
|
|
|
9,12 €
|
|
Min.: 1
Daugkart.: 1
|
|
|
SMD/SMT
|
H2PAK-7
|
N-Channel
|
1 Channel
|
1.2 kV
|
55 A
|
37 mOhms
|
- 10 V, + 22 V
|
3 V
|
73 nC
|
- 55 C
|
+ 175 C
|
375 W
|
Enhancement
|
AEC-Q101
|
|
|
|
SiC MOSFET Silicon carbide Power MOSFET 1200 V, 27 mOhm typ., 55 A in an H2PAK-7 package
- SCT025H120G3-7
- STMicroelectronics
-
1:
14,44 €
-
100Pagal užsakymą
-
Naujas Produktas
|
„Mouser“ Dalies Nr.
511-SCT025H120G3-7
Naujas Produktas
|
STMicroelectronics
|
SiC MOSFET Silicon carbide Power MOSFET 1200 V, 27 mOhm typ., 55 A in an H2PAK-7 package
|
|
100Pagal užsakymą
|
|
|
14,44 €
|
|
|
11,17 €
|
|
|
9,67 €
|
|
|
9,66 €
|
|
|
8,54 €
|
|
Min.: 1
Daugkart.: 1
|
|
|
SMD/SMT
|
H2PAK-7
|
N-Channel
|
1 Channel
|
1.2 kV
|
55 A
|
37 mOhms
|
- 10 V, + 22 V
|
3 V
|
73 nC
|
- 55 C
|
+ 175 C
|
375 W
|
Enhancement
|
AEC-Q101
|
|
|
|
SiC MOSFET Silicon carbide Power MOSFET 1200 V, 63 mOhm typ., 30 A in an H2PAK-7 package
- SCT070H120G3-7
- STMicroelectronics
-
1 000:
4,98 €
-
Ne Sandėlyje Esančių Prekių Pristatymo Laikas 16 Savaičių
-
Naujas Produktas
|
„Mouser“ Dalies Nr.
511-SCT070H120G3-7
Naujas Produktas
|
STMicroelectronics
|
SiC MOSFET Silicon carbide Power MOSFET 1200 V, 63 mOhm typ., 30 A in an H2PAK-7 package
|
|
Ne Sandėlyje Esančių Prekių Pristatymo Laikas 16 Savaičių
|
|
Min.: 1 000
Daugkart.: 1 000
|
|
|
SMD/SMT
|
H2PAK-7
|
N-Channel
|
1 Channel
|
1.2 kV
|
30 A
|
87 mOhms
|
- 10 V, + 22 V
|
3 V
|
37 nC
|
- 55 C
|
+ 175 C
|
223 W
|
Enhancement
|
|
|
Lietuva
