SiT8008 Low Power Programmable Oscillators

SiTime SiT8008 and SiT8008B low-power programmable oscillators include a programmable drive strength feature to provide a simple, flexible tool to optimize the clock rise/fall time for specific applications. The programmable drive strength improves system radiated electromagnetic interference (EMI) by slowing down the clock rise/fall time. The programmable drive strength also improves the downstream clock receiver’s (RX) jitter by decreasing (speeding up) the clock rise/fall time. The components have the ability to drive large capacitive loads while maintaining full swing with sharp edge rates. The oscillators exhibit EMI reduction by slowing rise/fall time and jitter reduction with faster rise/fall time. Power supply noise can be a source of jitter for the downstream chipset. One way to reduce this jitter is to speed up the rise/fall time of the input clock. Some chipsets may also require faster rise/fall time in order to reduce their sensitivity to this type of jitter. The components have high output load capability. The rise/fall time of the input clock varies as a function of the actual capacitive load the clock drives. At any given drive strength, the rise/fall time becomes slower as the output load increases. The devices can support up to 60pF or higher in maximum capacitive loads with drive strength settings.

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SiTime MEMS osciliatoriai 100MHz 2.5-3.3V -40C +85C 50ppm Ne Sandėlyje Esantys
Min.: 1
Daugkart.: 1
Reel: 250

3.2 mm x 2.5 mm 100 MHz 50 PPM 15 pF 2.25 V 3.63 V LVCMOS, HCMOS - 40 C + 85 C AEC-Q100 SiT8008B
SiTime MEMS osciliatoriai 33.33MHz +/-50ppm 3.3V+/-10% -40C+85C Ne Sandėlyje Esantys
Min.: 1
Daugkart.: 1
Reel: 250

2 mm x 1.6 mm 33.33 MHz 50 PPM 15 pF 2.97 V 3.63 V LVCMOS 4.5 mA - 40 C + 85 C SiT8008