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Diodes Incorporated 5.0SMCJ1xCA 5000W Transient Voltage Suppressor
10-31-2025
10-31-2025
High-power TVS diode designed to protect sensitive electronic circuits from voltage spikes.
Diodes Incorporated 2N7002 N-Channel E-Mode Field Effect Transistors
10-31-2025
10-31-2025
Offers fast switching performance with low gate charge and 60V maximum drain-source voltage.
Diodes Incorporated DMTH64M2LPDW Dual N-Channel E-Mode MOSFET
10-31-2025
10-31-2025
Integrates two MOSFETs in a single PowerDI® 5mm x 6mm package with excellent thermal performance.
Diodes Incorporated DMN1057UCA3 N-Channel Enhancement Mode MOSFET
10-21-2025
10-21-2025
Features superior switching performance, ideal for high-efficiency power-management applications.
Diodes Incorporated DTH1006P5 Glass Passivated Fast Recovery Rectifier
10-13-2025
10-13-2025
A 600V peak repetitive reverse voltage (VRRM) rectifier in a thermally efficient PowerDI®5 package.
Diodes Incorporated DXTP80x PNP Bipolar Transistors
09-18-2025
09-18-2025
PNP Bipolar Transistors offer a small form factor, thermally efficient PowerDI 3333-8 package.
Diodes Incorporated DXTN80x NPN Bipolar Transistors
09-17-2025
09-17-2025
Offers a small form factor, thermally efficient PowerDI 3333-8 package, for higher-density products.
Diodes Incorporated TT8M 8A Glass Pasivated Bridge Rectifiers
05-01-2025
05-01-2025
Features a 1000V maximum repetitive peak reverse voltage and an 8A average rectified output current.
Diodes Incorporated DSCxA065LP Silicon Carbide Schottky Diodes
02-20-2025
02-20-2025
Features superior reverse leakage stability at high temperatures in a DFN8080 package.
Diodes Incorporated DXTN69060C 60V NPN Ultra-Low VCE(SAT) Transistors
11-14-2024
11-14-2024
Features a proprietary structure for achieving ultra-low VCE(SAT) performance.
Diodes Incorporated DMT31M8LFVWQ 30V N-Ch Enhancement Mode MOSFETs
10-01-2024
10-01-2024
Provides low on-resistance in a thermally efficient small form factor package.
Diodes Incorporated DMN2992UFA 20V N-Ch Enhancement Mode MOSFET
08-01-2024
08-01-2024
20V N-Ch MOSFET designed to minimize the RDS(ON), available in an X2-DFN0806-3 package.
Diodes Incorporated DT1042-02SRQ 2-Ch Low Capacitance TVS Diode Array
07-01-2024
07-01-2024
Designed to protect sensitive electronics from ESD damage.
Diodes Incorporated DMWSH120Hx 1200V N-Channel Power MOSFETs
06-24-2024
06-24-2024
Designed to minimize the on-state resistance and maintain excellent switching performance.
Diodes Incorporated SxCMHQ AEC-Q101 Glass Passivated Rectifiers
06-04-2024
06-04-2024
Offers high-current capability and low forward voltage drop.
Diodes Incorporated DESD24VS2SOQ 24V CAN/LIN Bus Protector
06-01-2024
06-01-2024
An ESD and surge protection device packaged in a compact, surface-mount SOT23 package.
Diodes Incorporated DMP3014SFDE 30V P-Ch Enhancement Mode MOSFETs
05-01-2024
05-01-2024
Offers low on-resistance & gate threshold voltage, while maintaining switching performance.
Diodes Incorporated BC53-16PAWQ 80V PNP Medium Power Transistor
05-01-2024
05-01-2024
Available in a compact DFN2020-3 package whose footprint is 50% smaller than an SOT-23 package.
Diodes Incorporated DMT26M0LDG Asymmetrical Dual N-Channel MOSFETs
04-01-2024
04-01-2024
Designed to minimize the on-state resistance [RDS(ON)] yet maintain superior switching performance.
Diodes Incorporated US1NDFQ 1A Surface-Mount Ultra-Fast Rectifier
03-01-2024
03-01-2024
Offers ultra-fast recovery time for high efficiency in general rectification applications.
Diodes Incorporated DMP68D1LV Dual P-Channel Enhancement Mode MOSFET
01-01-2024
01-01-2024
Offers low on-resistance and input capacitance, while maintaining superior switching performance.
Diodes Incorporated DESDxxVxS2UTQ Two-Ch Unidirectional TVS Diode
01-01-2024
01-01-2024
Designed to protect sensitive electronics from damage caused by ESD.
Diodes Incorporated DMWS120H100SM4 1200V N-Channel SiC Power MOSFET
06-02-2023
06-02-2023
Designed to minimize the on-state resistance yet maintain superior switching performance.
Diodes Incorporated DMTH46M7SFVWQ N-Ch Enhancement Mode MOSFET
03-30-2023
03-30-2023
AEC-Q101 qualified MOSFET with Low RDS(ON) that ensures minimum on-state losses.
Diodes Incorporated MJD Automotive Medium Power Transistors
03-21-2023
03-21-2023
Devices are AEC-Q101 qualified, PPAP capable, and manufactured in IATF16949 certified facilities.
Peržiūra: 1 - 25 iš 39
Vishay SE050N6/SE080N6/SE100N6/SE120N6 SMD Rectifiers
02-10-2026
02-10-2026
These devices are available in a low-profile package with a typical height of only 0.88mm.
Littelfuse CMA160E1600HF Viengubas tiristorius
02-06-2026
02-06-2026
High‑performance 160A, 1600V, features a planar passivated chip structure in a PLUS247 package.
TDK-Lambda i1R ORing MOSFET Modules
02-05-2026
02-05-2026
High-efficiency and low-loss power devices designed to replace traditional diodes.
Diotec Semiconductor BZX84B3V6 SMD Planar Zener Diode
02-03-2026
02-03-2026
Offers a sharp Zener voltage breakdown and a low leakage current.
Vishay SE40CLJ Surface-Mount High Voltage Rectifiers
02-03-2026
02-03-2026
Designed for demanding power conversion applications
Vishay High Current Density/Voltage Schottky Rectifiers
02-03-2026
02-03-2026
Delivers robust performance for demanding power‑conversion applications.
Vishay Power Silicon Carbide Schottky Diodes
02-03-2026
02-03-2026
Delivers exceptional efficiency, ruggedness, and reliability in demanding power‑electronics apps.
Vishay SE30CLJ Surface-Mount High Voltage Rectifiers
02-03-2026
02-03-2026
Engineered for robust performance in demanding power conversion applications.
IXYS X4-Class maitinimo MOSFET
02-02-2026
02-02-2026
Offer low on-state resistance and conduction losses, with improved efficiency.
Qorvo QPD1014A GaN Input Matched Transistors
01-20-2026
01-20-2026
15W (P3dB), 50Ω input matched discrete GaN-on-SiC HEMTs operating from 30MHz to 1.2GHz.
IXYS DP kintamosios srovės greito atkūrimo diodai
01-20-2026
01-20-2026
600V or 1200V Schottky diodes with low reverse leakage current and fast recovery time.
Qorvo QPD1004A GaN Input Matched Transistors
01-19-2026
01-19-2026
25W, 50Ω input matched discrete GaN on SiC HEMT operates from 30MHz to 1400MHz on a 50V supply rail.
Qorvo QPD1011A GaN Input Matched Transistors
01-19-2026
01-19-2026
7W (P3dB), 50Ω input matched discrete GaN-on-SiC HEMTs operating from 30MHz to 1.2GHz.
Littelfuse SM15KPA-HRA ir SM30KPA-HRA itin patikimi diodai
01-13-2026
01-13-2026
Protects I/O interfaces, VCC bus, and other circuits in avionics, aviation, and eVTOL applications.
Littelfuse SP432x-01WTG TVS diodai
01-08-2026
01-08-2026
Provide ultra-low capacitance, bidirectional, and a high level of protection.
onsemi NVBYST0D6N08X 80V N-Channel Power MOSFET
12-26-2025
12-26-2025
This device offers a low QRR and soft recovery body diode in a TCPAK1012 (TopCool) package.
Infineon Technologies OptiMOS™ 6 80V Power MOSFETs
12-23-2025
12-23-2025
Sets industry benchmark performance with a wide portfolio offering.
onsemi NVMFD5877NL Dual N-Channel MOSFET
12-19-2025
12-19-2025
Designed for compact and efficient designs including high thermal performance.
Infineon Technologies CoolSiC™ Automotive 750V G2 MOSFETs
12-19-2025
12-19-2025
Engineered to meet the stringent demands of electric vehicle (EV) applications.
onsemi NxT2023N065M3S EliteSiC MOSFETs
12-04-2025
12-04-2025
Feature low effective output capacitance and ultra-low gate charge.
STMicroelectronics SGT080R70ILB E-Mode PowerGaN Transistor
12-04-2025
12-04-2025
E-Mode PowerGaN transistor designed for high-efficiency power conversion applications.
Infineon Technologies 750V TRENCHSTOP™ IGBT7 H7 Discrete Transistors
12-01-2025
12-01-2025
DTO247 package, replaces multiple lower-current transistors in TO247 packages connected in parallel.
onsemi FDC642P-F085 Small Signal MOSFET
11-25-2025
11-25-2025
Offers a high-performance trench technology for extremely low RDS(on) and fast switching speed.
onsemi NTTFS007P02P8 P-Channel Low/Medium Voltage MOSFET
11-25-2025
11-25-2025
Built using PowerTrench technology for extremely low RDS(on) switching performance and ruggedness.
Bourns SMLJ-R Transient Voltage Suppressor Diodes
11-24-2025
11-24-2025
Designed for surge and ESD protection in compact chip package DO-214AB (SMC) size format.
Peržiūra: 1 - 25 iš 1215