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Tranzistorių tipai

Sąrašas Vaizdai

Taikyti filtrai:

Gamintojas = Nexperia Norėdami pakeisti esamus filtrus, grįžkite į produktų skirtuką.

Nexperia BUK7Q N-Channel MOSFET in MLPAK33-WF Package

09-29-2025

- Uses Trench 9 technology, meets AEC-Q101 requirements.

Nexperia BUK9Q N-Channel Trench MOSFET

09-09-2025

- Logic-level compatible, fast switching, and fully automotive qualified to AEC-Q101 at 175°C.

Nexperia BUK6Q66-60PJ MOSFET

08-27-2025

- P-channel FET in an MLPAK33 (SOT8002-3) SMD plastic package using Trench MOSFET technology.

Nexperia BUK6Q8R2-30PJ MOSFET

08-27-2025

- P-channel FET in an MLPAK33 (SOT8002-3) SMD plastic package using Trench MOSFET technology.

Nexperia MJPEx Bipolar Junction Transistors (BJTs)

08-26-2025

- CFP15B package offers a compact & cost-efficient alternative to the MJD series in the DPAK package.

Nexperia BUK6Q21-30PJ MOSFET

08-19-2025

- 30V, P-channel FET in an MLPAK33 (SOT8002-3) SMD plastic package using Trench MOSFET technology.

Nexperia BUK6Q26-40PJ MOSFET

08-19-2025

- P-channel FET in an MLPAK33 (SOT8002-3) SMD plastic package using Trench MOSFET technology.

Nexperia BUK6Q12-40PJ MOSFET

08-19-2025

- P-channel FET in an MLPAK33 (SOT8002-3) SMD plastic package using Trench MOSFET technology.

Nexperia GANE7R0/GANE2R7/GANE1R8 100V GaN FETs

07-03-2025

- Normally off e-mode devices that deliver superior performance and very low on-state resistance.

Nexperia GANB1R2-040QBA & GANB012-040CBA GaN HEMTs

07-03-2025

- 40V, 1.2mΩ or 12mΩ, bi-directional Gallium Nitride (GaN) High Electron-Mobility-Transistors (HEMTs).

Nexperia PXNx N-Channel Logic Level Trench MOSFETs

04-14-2025

- 60V and 100V MOSFETS designed for high-efficiency power management in various applications.

Nexperia GANB8R0-040CBA Bi-Directional GaN FET

04-14-2025

- 40V, 8.0mΩ bi-directional GaN HEMT housed in a compact 1.7mm x 1.7mm WLCSP package.

Nexperia NX5020x N-Channel Enhancement Mode FETs

04-01-2025

- Devices have a very low threshold voltage and very fast switching using Trench MOSFET technology.

Nexperia Specifiniams taikymams skirti galios MOSFET

01-21-2025

- Combines proven MOSFET expertise with broad application understanding to create an expanding range.

Nexperia CCPAK ASFET, skirti Hotswap ir švelniam paleidimui

01-08-2025

- Offers a reliable linear mode, enhanced SOA, and low RDS(on) in a single device.

Nexperia BC5xPAS-Q 1A Medium Power PNP Transistors

12-30-2024

- AEC-Q101 qualified PNP transistors in an ultra-thin DFN2020D-3 (SOT1061D) SMD plastic package.

Nexperia BC869-Q Power Transistors

12-11-2024

- PNP medium power transistors in a SOT89 (SC-62) medium power and flat lead plastic package.

Nexperia GANB4R8-040CBA Dvikryptis GaN FET

10-01-2024

- 40 V, 4,8 mΩ Dvikryptis GaN Itin Judrus Elektronų Tranzistorius (HEMT) WLCSP pakuotėje.

Nexperia BUK7J2R4-80M N kanalo MOSFET

08-30-2024

- Sukurtas pagal „Trench 14“ mažos ominės varžos padalijimo technologiją ir patalpintas į LFPAK56E paketą.“

Nexperia PBSSxx50PAS/PBSSxx50PAS-Q tranzistoriai

07-04-2024

- Provides low collector-emitter saturation voltage and high collector current capability.

Nexperia GANE3R9-150QBA Galio Nitrido (GaN) FET

07-02-2024

- Bendrosios paskirties 150 V, 3,9 mΩ Galio Nitrido (GaN) FET VQFN pakuotėje.

Nexperia NSF0x0120 N kanalo SiC MOSFET

07-01-2024

- Offers superior RDS(on) temperature stability in a standard 7-pin TO-263 plastic package.

Nexperia PSMNxRx-80YSF „NextPower“ N kanalo MOSFET

06-24-2024

- 80 V, standartinio lygio užtūros varančiųjų MOSFET tranzistorių su mažu Qrr, kad būtų didesnis efektyvumas ir mažesni šuoliai.

Nexperia NSF0x120L4A0 N-Channel MOSFETs

04-23-2024

- Silicon Carbide (SiC) based 1200V power MOSFETs in well-established 4-pin TO-247 plastic packages.

Nexperia BSS138AK N kanalų griovelio MOSFET

04-04-2024

- AEC-Q101-qualified N-channel enhancement mode Field-Effect Transistors (FETs) in small SMD packages.

Peržiūra: 1 - 25 iš 50

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Texas Instruments 2N7002L 6V N-channel MOSFETs

05-18-2026

- Designed to minimize the on-state resistance while maintaining fast switching performance.

Infineon Technologies CIPOS™ Prime Automotive CoolSiC™ Power Modules

05-06-2026

- Power Modules are designed for high performance in xEV applications.

onsemi NVBYST0D8N08X Single N-Channel Power MOSFET

04-14-2026

- Optimized for high‑voltage operation and withstands fast switching and high-current stresses.

ROHM Semiconductor High-Density SiC Power Modules

04-10-2026

- TRCDRIVE pack™, DOT-247, and HSDIP20 packages contribute to high-performance power conversion.

iDEAL Semiconductor IS20M8R0S1P SuperQ™ 200V N-Channel Power MOSFET

04-07-2026

- Low switching losses, high short-circuit withstand capability (SCWC), and comes in a TO-220 package.

onsemi NTMFD0D9N02P1E MOSFET

04-06-2026

- Dual N-channel MOSFET designed with low Rg for fast switching applications.

Vishay VS-HOT200C080 200A 80V galingumo MOSFET valdiklis

04-02-2026

- This device reduces board space requirements by up to 15% compared to standard discrete solutions.

Toshiba N-Channel/P-Channel Power MOSFETs

03-31-2026

- Ideal for high-speed switching, power management switches, DC-DC converters, and motor drivers.

STMicroelectronics STL059N4S8AG Power MOSFET

03-31-2026

- A 40V N-channel enhancement mode Power MOSFET designed in Smart STripFET F8 technology.

Infineon Technologies N-Channel OptiMOS™ 7 25V Power MOSFETs

03-27-2026

- Application-optimized performance, enabling peak performance for data centers, servers, & AI.

Infineon Technologies OptiMOS™ 6 60V Power MOSFETs

03-27-2026

- Delivers superior performance to OptiMOS 5 via robust power MOSFET technology.

iDEAL Semiconductor iS20M6R3S1P SuperQ™ 200V N-Channel Power MOSFET

03-24-2026

- Delivers ultra-low conduction and switching losses in a robust TO-220 package.

Renesas Electronics TP65B110HRU Bi-Directional Switch (BDS)

03-20-2026

- 650V and 110mΩ normally-off Gallium Nitride (GaN) BDS in a compact TOLT package.

ROHM Semiconductor BST400D12P4A1x1 TRCDRIVE pack™ with Molded Modules

03-17-2026

- Features 1200V rated voltage in 41.6mm × 52.5mm package and integrates 4th Generation SiC MOSFETs.

Infineon Technologies OptiMOS™ 8 Power MOSFETs

03-17-2026

- These are N-channel, normal level 80V or 100V MOSFETs with very low on-resistance [RDS(ON)].

Infineon Technologies Medium-Voltage CoolGaN™ Bidirectional Switches

03-17-2026

- These devices are a great fit for serving as battery disconnect switches in various applications.

onsemi NVMFD5873NL Dual N-Channel Power MOSFETs

03-13-2026

- Designed for compact and efficient designs, including high thermal performance.

Diotec Semiconductor DI009N10PQ N-Channel Power MOSFET

03-10-2026

- Supports a drain‑source voltage of 100V and delivers 9A continuous drain current at 25°C.

Diotec Semiconductor DI040N10D1-AQ N-Channel Power MOSFET

03-10-2026

- Supports a drain‑source voltage of 100V and delivers 40A continuous drain current at 25°C.

Diotec Semiconductor DI050N04BPT-AQ N-Channel Power MOSFET

03-10-2026

- Supports a drain‑source voltage of 40V and delivers 50A continuous drain current at 25°C.

Diotec Semiconductor DI045N10PT-AQ N-Channel Power MOSFET

03-10-2026

- Supports a drain‑source voltage of 100V and delivers 45A continuous drain current at 25°C.

Qorvo QPD2560L 300W GaN/SiC HEMT

03-09-2026

- Designed for demanding L‑Band applications, operating across the 1.0GHz to 1.5GHz frequency range.

Diotec Semiconductor DIJ2A7N90 N-Channel Power MOSFET

03-06-2026

- Supports a drain‑source voltage of 900V and delivers 2.7A at 25°C continuous drain current.

EPC EPC2305 Enhancement-Mode GaN Power Transistor

03-05-2026

- Offers a low-inductance 3mm x 5mm QFN package with an exposed top for excellent thermal management.

Infineon Technologies N-Channel OptiMOS™ 7 80V Power MOSFETs

03-05-2026

- 80V, N-channel, normal level devices with superior thermal resistance in a PG‑TDSON‑8 package.

Peržiūra: 1 - 25 iš 577

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