Low Power CMOS SRAM

Alliance Memory Low Power Asynchronous Static Random Access Memory (SRAM) devices are fabricated using high-performance, high-reliability CMOS technology. Alliance Memory CMOS SRAM devices are designed for low-power applications and are particularly well-suited for battery backup nonvolatile memory applications. AS6C8008 is a 8,388,608-bit device organized as 1,048,576 words by 8-bits. AS6C1616 is a 16,777,216-bit device organized as 1,048,576 words by 16-bits. AS6C6264A is a 65,536-bit device organized as 8,192 words by 8 bits. AS6C62256 is a 262,144-bit device organized as 32,768 words by 8-bits. Available in different packages/cases.

Rezultatai: 2
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Alliance Memory SRAM 4M, 2.7-5.5V, 55ns 512K x 8 Asynch SRAM 641Prieinamumas
Min.: 1
Daugkart.: 1

4 Mbit 512 k x 8 55 ns Parallel 5.5 V 2.7 V 60 mA 0 C + 70 C Through Hole PDIP-32 Tube
Alliance Memory SRAM 4M, 2.7-5.5V, 55ns 512K x 8 Asynch SRAM 312Prieinamumas
Min.: 1
Daugkart.: 1

4 Mbit 512 k x 8 55 ns Parallel 5.5 V 2.7 V 60 mA - 40 C + 85 C Through Hole PDIP-32 Tube