SiC MOSFET Diskretieji Puslaidininkiai

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Rezultatai: 53
Pasirinkite Vaizdas Dalies Nr. Gam. Aprašymas Duomenų Lapas Prieinamumas Kainodara (EUR) Filtruokite lentelėje pateiktus rezultatus pagal vieneto kainą, remdamiesi kiekiu. Qty. RoHS Gaminio tipas Technologijos Montavimo stilius Pakuotė / Korpusas
Infineon Technologies SiC MOSFET SILICON CARBIDE MOSFET 70Prieinamumas
750Tikėtina 2026-05-14
Min.: 1
Daugkart.: 1
: 750

SiC MOSFETS SiC SMD/SMT PG-HDSOP-22
Infineon Technologies SiC MOSFET CoolSiC 1200 V SiC MOSFET G2 : Silicon Carbide MOSFET with .XT interconnection technology 5Prieinamumas
720Pagal užsakymą
Min.: 1
Daugkart.: 1

SiC MOSFETS SiC Through Hole PG-TO247-4-U07
onsemi SiC MOSFET SIC MOS TO247-4L 70MOHM M3S 1200V 450Prieinamumas
Min.: 1
Daugkart.: 1

SiC MOSFETS SiC Through Hole TO-247-4L
Nexperia SiC MOSFET NSF030120D7A0-Q/SOT8070/TO263- 594Prieinamumas
Min.: 1
Daugkart.: 1
: 800

SiC MOSFETS SiC SMD/SMT TO-263-7
Nexperia SiC MOSFET NSF040120D7A1-Q/SOT8070/TO263- 720Prieinamumas
Min.: 1
Daugkart.: 1
: 800

SiC MOSFETS SiC SMD/SMT TO-263-7
Nexperia SiC MOSFET NSF040120D7A1/SOT8070/TO263-7L 716Prieinamumas
Min.: 1
Daugkart.: 1
: 800

SiC MOSFETS SiC SMD/SMT TO-263-7
Infineon Technologies SiC MOSFET CoolSiC MOSFET discrete 1200 V G2 in top-side cooled Q-DPAK package 1 900Prieinamumas
Min.: 1
Daugkart.: 1
: 750

SiC MOSFETS SiC SMD/SMT PG-HDSOP-22-U03
Infineon Technologies SiC MOSFET SILICON CARBIDE MOSFET 1 613Prieinamumas
Min.: 1
Daugkart.: 1
: 2 000

SiC MOSFETS SiC SMD/SMT HSOF-8
Infineon Technologies SiC MOSFET CoolSiC MOSFET 650 V, 33 mohm G2 6 403Prieinamumas
Min.: 1
Daugkart.: 1

SiC MOSFETS SiC Through Hole TO-247-4
Infineon Technologies SiC MOSFET CoolSiC MOSFET discrete 1200 V G2 in top-side cooled Q-DPAK package 599Prieinamumas
Min.: 1
Daugkart.: 1
: 750

SiC MOSFETS SiC SMD/SMT PG-HDSOP-22-U03
Infineon Technologies SiC MOSFET CoolSiC MOSFET discrete 1200 V G2 in top-side cooled Q-DPAK package 330Prieinamumas
Min.: 1
Daugkart.: 1
: 750

SiC MOSFETS SiC SMD/SMT PG-HDSOP-22-U03
Infineon Technologies SiC MOSFET CoolSiC MOSFET discrete 1200 V G2 in top-side cooled Q-DPAK package 387Prieinamumas
Min.: 1
Daugkart.: 1
: 750

SiC MOSFETS SiC SMD/SMT PG-HDSOP-22-U03
Infineon Technologies SiC MOSFET Leverages switching performance while enabling the benefits of top-side cooling 1 008Prieinamumas
1 800Pagal užsakymą
Min.: 1
Daugkart.: 1
: 1 800

SiC MOSFETS SiC SMD/SMT
Infineon Technologies SiC MOSFET Leverages switching performance while enabling the benefits of top-side cooling 1 664Prieinamumas
Min.: 1
Daugkart.: 1
: 1 800

SiC MOSFETS SiC SMD/SMT
Infineon Technologies SiC MOSFET CoolSiC MOSFET 650 V, 10 mohm G2 336Prieinamumas
Min.: 1
Daugkart.: 1

SiC MOSFETS SiC Through Hole TO-247-3
Infineon Technologies SiC MOSFET CoolSiC MOSFET 650 V, 33 mohm G2 247Prieinamumas
Min.: 1
Daugkart.: 1

SiC MOSFETS SiC Through Hole TO-247-3
Infineon Technologies SiC MOSFET CoolSiC MOSFET discrete 1200V, 12 mohm G2 336Prieinamumas
480Tikėtina 2026-06-18
Min.: 1
Daugkart.: 1

SiC MOSFETS SiC Through Hole TO-247-4
Infineon Technologies SiC MOSFET CoolSiC MOSFET discrete 1200V, 17 mohm G2 686Prieinamumas
Min.: 1
Daugkart.: 1

SiC MOSFETS SiC Through Hole TO-247-4
Infineon Technologies SiC MOSFET CoolSiC MOSFET discrete 1200V, 22 mohm G2 985Prieinamumas
720Pagal užsakymą
Min.: 1
Daugkart.: 1

SiC MOSFETS SiC Through Hole TO-247-4
Infineon Technologies SiC MOSFET CoolSiC MOSFET discrete 1200V, 26 mohm G2 583Prieinamumas
Min.: 1
Daugkart.: 1

SiC MOSFETS SiC Through Hole TO-247-4
Infineon Technologies SiC MOSFET CoolSiC MOSFET discrete 1200V, 34 mohm G2 846Prieinamumas
Min.: 1
Daugkart.: 1

SiC MOSFETS SiC Through Hole TO-247-4
Infineon Technologies SiC MOSFET CoolSiC MOSFET discrete 1200V, 40 mohm G2 536Prieinamumas
Min.: 1
Daugkart.: 1

SiC MOSFETS SiC Through Hole TO-247-4
Infineon Technologies SiC MOSFET CoolSiC MOSFET discrete 1200V, 53 mohm G2 844Prieinamumas
Min.: 1
Daugkart.: 1

SiC MOSFETS SiC Through Hole TO-247-4
Infineon Technologies SiC MOSFET CoolSiC MOSFET discrete 1200V, 78 mohm G2 506Prieinamumas
Min.: 1
Daugkart.: 1

SiC MOSFETS SiC Through Hole TO-247-4
IXYS SiC MOSFET 1200V 80mohm (40A a. 25C) SiC MOSFET in TO267-7L 795Prieinamumas
Min.: 1
Daugkart.: 1
: 800

SiC MOSFETS SiC SMD/SMT TO-263-7L