|
|
SiC MOSFET CoolSiC 2000 V SiC Trench MOSFET in TO-247PLUS-4-HCC package
- IMYH200R012M1HXKSA1
- Infineon Technologies
-
1:
59,97 €
-
909Prieinamumas
|
„Mouser“ Dalies Nr.
726-IMYH200R012M1HXK
|
Infineon Technologies
|
SiC MOSFET CoolSiC 2000 V SiC Trench MOSFET in TO-247PLUS-4-HCC package
|
|
909Prieinamumas
|
|
Min.: 1
Daugkart.: 1
|
|
|
Through Hole
|
TO-247-4
|
N-Channel
|
1 Channel
|
2 kV
|
123 A
|
16.5 mOhms
|
- 10 V, + 23 V
|
3.5 V
|
246 nC
|
- 55 C
|
+ 150 C
|
552 W
|
Enhancement
|
CoolSIC
|
|
|
|
SiC MOSFET CoolSiC 2000 V SiC Trench MOSFET in TO-247PLUS-4-HCC package
- IMYH200R024M1HXKSA1
- Infineon Technologies
-
1:
33,39 €
-
599Prieinamumas
-
960Tikėtina 2026-03-02
|
„Mouser“ Dalies Nr.
726-IMYH200R024M1HXK
|
Infineon Technologies
|
SiC MOSFET CoolSiC 2000 V SiC Trench MOSFET in TO-247PLUS-4-HCC package
|
|
599Prieinamumas
960Tikėtina 2026-03-02
|
|
Min.: 1
Daugkart.: 1
|
|
|
Through Hole
|
TO-247-4
|
N-Channel
|
1 Channel
|
2 kV
|
89 A
|
33 mOhms
|
- 10 V, + 23 V
|
3.5 V
|
137 nC
|
- 55 C
|
+ 150 C
|
576 W
|
Enhancement
|
CoolSIC
|
|
|
|
SiC MOSFET CoolSiC 2000 V SiC Trench MOSFET in TO-247PLUS-4-HCC package
- IMYH200R075M1HXKSA1
- Infineon Technologies
-
1:
15,33 €
-
128Prieinamumas
-
480Tikėtina 2026-12-10
|
„Mouser“ Dalies Nr.
726-IMYH200R075M1HXK
|
Infineon Technologies
|
SiC MOSFET CoolSiC 2000 V SiC Trench MOSFET in TO-247PLUS-4-HCC package
|
|
128Prieinamumas
480Tikėtina 2026-12-10
|
|
Min.: 1
Daugkart.: 1
|
|
|
Through Hole
|
TO-247-4
|
N-Channel
|
1 Channel
|
2 kV
|
34 A
|
98 mOhms
|
- 10 V, + 23 V
|
3.5 V
|
64 nC
|
- 55 C
|
+ 150 C
|
267 W
|
Enhancement
|
CoolSIC
|
|
|
|
SiC MOSFET CoolSiC 2000 V SiC Trench MOSFET in TO-247PLUS-4-HCC package
- IMYH200R050M1HXKSA1
- Infineon Technologies
-
1:
18,58 €
-
10Prieinamumas
-
1 440Pagal užsakymą
|
„Mouser“ Dalies Nr.
726-IMYH200R050M1HXK
|
Infineon Technologies
|
SiC MOSFET CoolSiC 2000 V SiC Trench MOSFET in TO-247PLUS-4-HCC package
|
|
10Prieinamumas
1 440Pagal užsakymą
Turime sandėlyje:
10 Galime išsiųsti iš karto
Pagal užsakymą:
720 Tikėtina 2026-03-12
720 Tikėtina 2026-08-20
Gamintojo numatytas pristatymo laikas
26 Savaičių
|
|
|
18,58 €
|
|
|
13,69 €
|
|
|
12,62 €
|
|
Min.: 1
Daugkart.: 1
|
|
|
Through Hole
|
TO-247-4
|
N-Channel
|
1 Channel
|
2 kV
|
48 A
|
64 mOhms
|
- 10 V, + 23 V
|
3.5 V
|
82 nC
|
- 55 C
|
+ 150 C
|
348 W
|
Enhancement
|
CoolSIC
|
|
|
|
SiC MOSFET CoolSiC 2000 V SiC Trench MOSFET in TO-247PLUS-4-HCC package
- IMYH200R100M1HXKSA1
- Infineon Technologies
-
1:
14,16 €
-
4 353Tikėtina 2026-07-02
|
„Mouser“ Dalies Nr.
726-IMYH200R100M1HXK
|
Infineon Technologies
|
SiC MOSFET CoolSiC 2000 V SiC Trench MOSFET in TO-247PLUS-4-HCC package
|
|
4 353Tikėtina 2026-07-02
|
|
|
14,16 €
|
|
|
10,96 €
|
|
|
9,48 €
|
|
|
9,47 €
|
|
Min.: 1
Daugkart.: 1
|
|
|
Through Hole
|
TO-247-4
|
N-Channel
|
1 Channel
|
2 kV
|
26 A
|
131 mOhms
|
- 10 V, + 23 V
|
3.5 V
|
55 nC
|
- 55 C
|
+ 150 C
|
217 W
|
Enhancement
|
CoolSIC
|
|
Lietuva