|
|
SiC MOSFET CoolSiC 2000 V SiC Trench MOSFET in TO-247PLUS-4-HCC package
- IMYH200R012M1HXKSA1
- Infineon Technologies
-
1:
59,33 €
-
1 248Prieinamumas
|
„Mouser“ Dalies Nr.
726-IMYH200R012M1HXK
|
Infineon Technologies
|
SiC MOSFET CoolSiC 2000 V SiC Trench MOSFET in TO-247PLUS-4-HCC package
|
|
1 248Prieinamumas
|
|
Min.: 1
Daugkart.: 1
|
|
|
Through Hole
|
TO-247-4
|
N-Channel
|
1 Channel
|
2 kV
|
123 A
|
16.5 mOhms
|
- 10 V, + 23 V
|
3.5 V
|
246 nC
|
- 55 C
|
+ 150 C
|
552 W
|
Enhancement
|
CoolSIC
|
|
|
|
SiC MOSFET CoolSiC 2000 V SiC Trench MOSFET in TO-247PLUS-4-HCC package
- IMYH200R024M1HXKSA1
- Infineon Technologies
-
1:
37,93 €
-
1 240Prieinamumas
|
„Mouser“ Dalies Nr.
726-IMYH200R024M1HXK
|
Infineon Technologies
|
SiC MOSFET CoolSiC 2000 V SiC Trench MOSFET in TO-247PLUS-4-HCC package
|
|
1 240Prieinamumas
|
|
Min.: 1
Daugkart.: 1
|
|
|
Through Hole
|
TO-247-4
|
N-Channel
|
1 Channel
|
2 kV
|
89 A
|
33 mOhms
|
- 10 V, + 23 V
|
3.5 V
|
137 nC
|
- 55 C
|
+ 150 C
|
576 W
|
Enhancement
|
CoolSIC
|
|
|
|
SiC MOSFET CoolSiC 2000 V SiC Trench MOSFET in TO-247PLUS-4-HCC package
- IMYH200R050M1HXKSA1
- Infineon Technologies
-
1:
20,33 €
-
1 007Prieinamumas
-
1 440Pagal užsakymą
|
„Mouser“ Dalies Nr.
726-IMYH200R050M1HXK
|
Infineon Technologies
|
SiC MOSFET CoolSiC 2000 V SiC Trench MOSFET in TO-247PLUS-4-HCC package
|
|
1 007Prieinamumas
1 440Pagal užsakymą
Turime sandėlyje:
1 007 Galime išsiųsti iš karto
Pagal užsakymą:
480 Laukiama
960 Tikėtina 2026-07-23
Gamintojo numatytas pristatymo laikas
30 Savaičių
|
|
Min.: 1
Daugkart.: 1
|
|
|
Through Hole
|
TO-247-4
|
N-Channel
|
1 Channel
|
2 kV
|
48 A
|
64 mOhms
|
- 10 V, + 23 V
|
3.5 V
|
82 nC
|
- 55 C
|
+ 150 C
|
348 W
|
Enhancement
|
CoolSIC
|
|
|
|
SiC MOSFET CoolSiC 2000 V SiC Trench MOSFET in TO-247PLUS-4-HCC package
- IMYH200R075M1HXKSA1
- Infineon Technologies
-
1:
16,63 €
-
607Prieinamumas
-
480Tikėtina 2026-06-01
|
„Mouser“ Dalies Nr.
726-IMYH200R075M1HXK
|
Infineon Technologies
|
SiC MOSFET CoolSiC 2000 V SiC Trench MOSFET in TO-247PLUS-4-HCC package
|
|
607Prieinamumas
480Tikėtina 2026-06-01
|
|
|
16,63 €
|
|
|
11,23 €
|
|
|
10,72 €
|
|
Min.: 1
Daugkart.: 1
|
|
|
Through Hole
|
TO-247-4
|
N-Channel
|
1 Channel
|
2 kV
|
34 A
|
98 mOhms
|
- 10 V, + 23 V
|
3.5 V
|
64 nC
|
- 55 C
|
+ 150 C
|
267 W
|
Enhancement
|
CoolSIC
|
|
|
|
SiC MOSFET CoolSiC 2000 V SiC Trench MOSFET in TO-247PLUS-4-HCC package
- IMYH200R100M1HXKSA1
- Infineon Technologies
-
1:
14,17 €
-
12Prieinamumas
-
18 480Tikėtina 2026-06-25
|
„Mouser“ Dalies Nr.
726-IMYH200R100M1HXK
|
Infineon Technologies
|
SiC MOSFET CoolSiC 2000 V SiC Trench MOSFET in TO-247PLUS-4-HCC package
|
|
12Prieinamumas
18 480Tikėtina 2026-06-25
|
|
Min.: 1
Daugkart.: 1
|
|
|
Through Hole
|
TO-247-4
|
N-Channel
|
1 Channel
|
2 kV
|
26 A
|
131 mOhms
|
- 10 V, + 23 V
|
3.5 V
|
55 nC
|
- 55 C
|
+ 150 C
|
217 W
|
Enhancement
|
CoolSIC
|
|
Lietuva