HS1Q Diodes ir Lygintuvai

Diodų tipai & lygintuvai

Pakeisti kategorijos rodinį
Rezultatai: 20
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Taiwan Semiconductor Lygintuvai 75ns, 1A, 1200V, High Efficient Recovery Rectifier 6 955Prieinamumas
Min.: 1
Daugkart.: 1
Reel: 7 500

Rectifiers SMD/SMT DO-214AC-2 1.2 kV 1.64 V 1 A
Taiwan Semiconductor Lygintuvai 75ns, 1A, 1200V, High Efficient Recovery Rectifier 2 756Prieinamumas
Min.: 1
Daugkart.: 1
Reel: 3 000

Rectifiers SMD/SMT DO-214AA-2 1.2 kV 1.62 V 1 A
Taiwan Semiconductor Lygintuvai 75ns, 1A, 1200V, High Efficient Recovery Rectifier 9 800Prieinamumas
Min.: 1
Daugkart.: 1
Reel: 14 000

Rectifiers SMD/SMT TSMA-2 1.2 kV 1.64 V 1 A
Taiwan Semiconductor Lygintuvai 75ns, 1A, 1200V, High Efficient Recovery Rectifier 9 800Prieinamumas
Min.: 1
Daugkart.: 1
Reel: 14 000

Rectifiers SMD/SMT SOD-128-2 1.2 kV 1.64 V 1 A
Taiwan Semiconductor Lygintuvai 75ns, 1A, 1200V, High Efficient Recovery Rectifier Automotive Qualified 9 800Prieinamumas
Min.: 1
Daugkart.: 1
Reel: 14 000

Rectifiers SMD/SMT TSMA-2 1.2 kV 1.64 V 1 A
Taiwan Semiconductor Lygintuvai 75ns, 1A, 1200V, High Efficient Recovery Rectifier 7 355Prieinamumas
Min.: 1
Daugkart.: 1
Reel: 7 500

Rectifiers SMD/SMT DO-214AC-2 1.2 kV 1.59 V 1 A
Taiwan Semiconductor Lygintuvai 75ns, 1A, 1200V, High Efficient Recovery Rectifier Automotive Qualified 9 730Prieinamumas
Min.: 1
Daugkart.: 1
Reel: 14 000

Rectifiers SMD/SMT SOD-128-2 1.2 kV 1.64 V 1 A
Taiwan Semiconductor Lygintuvai 75ns, 1A, 1200V, High Efficient Recovery Rectifier 2 965Prieinamumas
Min.: 1
Daugkart.: 1
Reel: 3 000

Rectifiers SMD/SMT DO-214AA-2 1.2 kV 1.62 V 1 A
Toshiba SiC SCHOTTKY diodai SiC Schottky barrier diode;TO-247-2L; Vrrm=1200V; IF=40A; PD=454W 65Prieinamumas
Min.: 1
Daugkart.: 1

SiC Schottky Diodes Through Hole TO-247-2L 1.27 V 102 A
Toshiba SiC SCHOTTKY diodai G3 SiC-SBD 650V 4A TO-220-2L 324Prieinamumas
Min.: 1
Daugkart.: 1

SiC Schottky Diodes Through Hole TO-220-2L 1.2 V 4 A
Toshiba SiC SCHOTTKY diodai RECT 1.2KV 38A RDL SIC SKY 56Prieinamumas
Min.: 1
Daugkart.: 1

SiC Schottky Diodes Through Hole TO-247-2 1.27 V 38 A
Toshiba SiC SCHOTTKY diodai RECT 1.2KV 30A RDL SIC SKY 67Prieinamumas
Min.: 1
Daugkart.: 1

SiC Schottky Diodes Through Hole TO-247-2L 1.27 V 83 A
Toshiba SiC SCHOTTKY diodai G3 SiC-SBD 650V 12A TO-220-2L 136Prieinamumas
Min.: 1
Daugkart.: 1

SiC Schottky Diodes Through Hole TO-220-2L 1.2 V 12 A
Toshiba SiC SCHOTTKY diodai G3 SiC-SBD 650V 10A TO-220-2L 93Prieinamumas
Min.: 1
Daugkart.: 1

SiC Schottky Diodes Through Hole TO-220-2L 1.2 V 10 A
Toshiba SiC SCHOTTKY diodai RECT 1.2KV 15A RDL SIC SKY 15Prieinamumas
Min.: 1
Daugkart.: 1

SiC Schottky Diodes Through Hole TO-247-2 1.27 V 50 A
Toshiba SiC SCHOTTKY diodai RECT 1.2KV 61A RDL SIC SKY 129Prieinamumas
Min.: 1
Daugkart.: 1

SiC Schottky Diodes Through Hole TO-247-2 1.27 V 61 A
Toshiba SiC SCHOTTKY diodai G3 SiC-SBD 650V 3A TO-220-2L 31Prieinamumas
Min.: 1
Daugkart.: 1

SiC Schottky Diodes Through Hole TO-220-2L 1.2 V 3 A
Toshiba SiC SCHOTTKY diodai G3 SiC-SBD 650V 6A TO-220-2L 287Prieinamumas
Min.: 1
Daugkart.: 1

SiC Schottky Diodes Through Hole TO-220-2L 1.2 V 6 A
Toshiba SiC SCHOTTKY diodai G3 SiC-SBD 650V 8A TO-220-2L 31Prieinamumas
Min.: 1
Daugkart.: 1

SiC Schottky Diodes Through Hole TO-220-2L 1.2 V 8 A
Toshiba SiC SCHOTTKY diodai G3 SiC-SBD 650V 2A TO-220-2L 10Prieinamumas
250Tikėtina 2026-04-08
Min.: 1
Daugkart.: 1

SiC Schottky Diodes Through Hole TO-220-2L 1.2 V 2 A