|
|
SiC MOSFET CoolSiC MOSFET discrete 1200 V G2 in top-side cooled Q-DPAK package
- IMCQ120R078M2HXTMA1
- Infineon Technologies
-
1:
7,95 €
-
856Prieinamumas
-
Naujas Produktas
|
„Mouser“ Dalies Nr.
726-IMCQ120R078M2HXT
Naujas Produktas
|
Infineon Technologies
|
SiC MOSFET CoolSiC MOSFET discrete 1200 V G2 in top-side cooled Q-DPAK package
|
|
856Prieinamumas
|
|
|
7,95 €
|
|
|
5,59 €
|
|
|
4,52 €
|
|
|
4,02 €
|
|
|
3,56 €
|
|
Min.: 1
Daugkart.: 1
:
750
|
|
SiC MOSFETS
|
SiC
|
SMD/SMT
|
PG-HDSOP-22-U03
|
N-Channel
|
|
|
|
SiC MOSFET Leverages switching performance while enabling the benefits of top-side cooling
- IMLT65R033M2HXTMA1
- Infineon Technologies
-
1:
9,85 €
-
1 059Prieinamumas
-
Naujas Produktas
|
„Mouser“ Dalies Nr.
726-IMLT65R033M2HXTM
Naujas Produktas
|
Infineon Technologies
|
SiC MOSFET Leverages switching performance while enabling the benefits of top-side cooling
|
|
1 059Prieinamumas
|
|
|
9,85 €
|
|
|
6,52 €
|
|
|
5,26 €
|
|
|
4,80 €
|
|
|
Peržiūrėti
|
|
|
4,24 €
|
|
|
4,25 €
|
|
|
4,24 €
|
|
|
Pasiūlymas
|
|
Min.: 1
Daugkart.: 1
:
1 800
|
|
SiC MOSFETS
|
SiC
|
SMD/SMT
|
|
N-Channel
|
|
|
|
SiC MOSFET CoolSiC MOSFET 650 V, 10 mohm G2
- IMW65R010M2HXKSA1
- Infineon Technologies
-
1:
20,55 €
-
259Prieinamumas
-
Naujas Produktas
|
„Mouser“ Dalies Nr.
726-IMW65R010M2HXKSA
Naujas Produktas
|
Infineon Technologies
|
SiC MOSFET CoolSiC MOSFET 650 V, 10 mohm G2
|
|
259Prieinamumas
|
|
Min.: 1
Daugkart.: 1
|
|
SiC MOSFETS
|
SiC
|
Through Hole
|
TO-247-3
|
N-Channel
|
|
|
|
SiC MOSFET CoolSiC MOSFET 650 V, 26 mohm G2
- IMW65R026M2HXKSA1
- Infineon Technologies
-
1:
12,87 €
-
558Prieinamumas
-
Naujas Produktas
|
„Mouser“ Dalies Nr.
726-IMW65R026M2HXKSA
Naujas Produktas
|
Infineon Technologies
|
SiC MOSFET CoolSiC MOSFET 650 V, 26 mohm G2
|
|
558Prieinamumas
|
|
Min.: 1
Daugkart.: 1
|
|
SiC MOSFETS
|
SiC
|
Through Hole
|
TO-247-3
|
N-Channel
|
|
|
|
SiC MOSFET CoolSiC 1200 V SiC MOSFET G2
- IMZA120R012M2HXKSA1
- Infineon Technologies
-
1:
24,82 €
-
125Prieinamumas
-
240Tikėtina 2026-08-13
-
Naujas Produktas
|
„Mouser“ Dalies Nr.
726-IMZA120R012M2HXK
Naujas Produktas
|
Infineon Technologies
|
SiC MOSFET CoolSiC 1200 V SiC MOSFET G2
|
|
125Prieinamumas
240Tikėtina 2026-08-13
|
|
Min.: 1
Daugkart.: 1
Maks.: 10
|
|
SiC MOSFETS
|
SiC
|
Through Hole
|
PG-TO247-4-U02
|
N-Channel
|
|
|
|
SiC MOSFET CoolSiC 1200 V SiC MOSFET G2
- IMZA120R017M2HXKSA1
- Infineon Technologies
-
1:
19,75 €
-
147Prieinamumas
-
Naujas Produktas
|
„Mouser“ Dalies Nr.
726-IMZA120R017M2HXK
Naujas Produktas
|
Infineon Technologies
|
SiC MOSFET CoolSiC 1200 V SiC MOSFET G2
|
|
147Prieinamumas
|
|
Min.: 1
Daugkart.: 1
Maks.: 30
|
|
SiC MOSFETS
|
SiC
|
Through Hole
|
PG-TO247-4-U02
|
N-Channel
|
|
|
|
SiC MOSFET CoolSiC 1200 V SiC MOSFET G2
- IMZA120R022M2HXKSA1
- Infineon Technologies
-
1:
16,42 €
-
341Prieinamumas
-
Naujas Produktas
|
„Mouser“ Dalies Nr.
726-IMZA120R022M2HXK
Naujas Produktas
|
Infineon Technologies
|
SiC MOSFET CoolSiC 1200 V SiC MOSFET G2
|
|
341Prieinamumas
|
|
Min.: 1
Daugkart.: 1
Maks.: 20
|
|
SiC MOSFETS
|
SiC
|
Through Hole
|
PG-TO247-4-U02
|
N-Channel
|
|
|
|
SiC MOSFET CoolSiC 1200 V SiC MOSFET G2
- IMZA120R040M2HXKSA1
- Infineon Technologies
-
1:
10,88 €
-
372Prieinamumas
-
Naujas Produktas
|
„Mouser“ Dalies Nr.
726-IMZA120R040M2HXK
Naujas Produktas
|
Infineon Technologies
|
SiC MOSFET CoolSiC 1200 V SiC MOSFET G2
|
|
372Prieinamumas
|
|
|
10,88 €
|
|
|
7,16 €
|
|
|
6,23 €
|
|
|
5,32 €
|
|
|
5,29 €
|
|
Min.: 1
Daugkart.: 1
|
|
SiC MOSFETS
|
SiC
|
Through Hole
|
PG-TO247-4-U02
|
N-Channel
|
|
|
|
SiC MOSFET CoolSiC MOSFET discrete 1200V, 12 mohm G2
- IMZC120R012M2HXKSA1
- Infineon Technologies
-
1:
22,90 €
-
690Prieinamumas
-
240Tikėtina 2026-10-15
-
Naujas Produktas
|
„Mouser“ Dalies Nr.
726-IMZC120R012M2HXK
Naujas Produktas
|
Infineon Technologies
|
SiC MOSFET CoolSiC MOSFET discrete 1200V, 12 mohm G2
|
|
690Prieinamumas
240Tikėtina 2026-10-15
|
|
Min.: 1
Daugkart.: 1
|
|
SiC MOSFETS
|
SiC
|
Through Hole
|
TO-247-4
|
N-Channel
|
|
|
|
SiC MOSFET CoolSiC MOSFET discrete 1200V, 17 mohm G2
- IMZC120R017M2HXKSA1
- Infineon Technologies
-
1:
19,03 €
-
144Prieinamumas
-
480Tikėtina 2026-07-27
-
Naujas Produktas
|
„Mouser“ Dalies Nr.
726-IMZC120R017M2HXK
Naujas Produktas
|
Infineon Technologies
|
SiC MOSFET CoolSiC MOSFET discrete 1200V, 17 mohm G2
|
|
144Prieinamumas
480Tikėtina 2026-07-27
|
|
Min.: 1
Daugkart.: 1
Maks.: 20
|
|
SiC MOSFETS
|
SiC
|
Through Hole
|
TO-247-4
|
N-Channel
|
|
|
|
SiC MOSFET CoolSiC MOSFET discrete 1200V, 26 mohm G2
- IMZC120R026M2HXKSA1
- Infineon Technologies
-
1:
14,69 €
-
483Prieinamumas
-
Naujas Produktas
|
„Mouser“ Dalies Nr.
726-IMZC120R026M2HXK
Naujas Produktas
|
Infineon Technologies
|
SiC MOSFET CoolSiC MOSFET discrete 1200V, 26 mohm G2
|
|
483Prieinamumas
|
|
Min.: 1
Daugkart.: 1
Maks.: 20
|
|
SiC MOSFETS
|
SiC
|
Through Hole
|
TO-247-4
|
N-Channel
|
|
|
|
SiC MOSFET CoolSiC MOSFET discrete 1200V, 34 mohm G2
- IMZC120R034M2HXKSA1
- Infineon Technologies
-
1:
10,78 €
-
1 031Prieinamumas
-
Naujas Produktas
|
„Mouser“ Dalies Nr.
726-IMZC120R034M2HXK
Naujas Produktas
|
Infineon Technologies
|
SiC MOSFET CoolSiC MOSFET discrete 1200V, 34 mohm G2
|
|
1 031Prieinamumas
|
|
Min.: 1
Daugkart.: 1
Maks.: 70
|
|
SiC MOSFETS
|
SiC
|
Through Hole
|
TO-247-4
|
N-Channel
|
|
|
|
SiC MOSFET CoolSiC MOSFET discrete 1200V, 53 mohm G2
- IMZC120R053M2HXKSA1
- Infineon Technologies
-
1:
8,74 €
-
754Prieinamumas
-
Naujas Produktas
|
„Mouser“ Dalies Nr.
726-IMZC120R053M2HXK
Naujas Produktas
|
Infineon Technologies
|
SiC MOSFET CoolSiC MOSFET discrete 1200V, 53 mohm G2
|
|
754Prieinamumas
|
|
|
8,74 €
|
|
|
5,15 €
|
|
|
4,36 €
|
|
|
4,35 €
|
|
|
4,28 €
|
|
Min.: 1
Daugkart.: 1
|
|
SiC MOSFETS
|
SiC
|
Through Hole
|
TO-247-4
|
N-Channel
|
|
|
|
SiC MOSFET 1200V 80mohm (40A a. 25C) SiC MOSFET in TO267-7L
- IXSA40N120L2-7TR
- IXYS
-
1:
8,37 €
-
790Prieinamumas
-
Naujas Produktas
|
„Mouser“ Dalies Nr.
747-IXSA40N120L2-7TR
Naujas Produktas
|
IXYS
|
SiC MOSFET 1200V 80mohm (40A a. 25C) SiC MOSFET in TO267-7L
|
|
790Prieinamumas
|
|
|
8,37 €
|
|
|
5,74 €
|
|
|
4,33 €
|
|
|
4,10 €
|
|
|
4,10 €
|
|
Min.: 1
Daugkart.: 1
:
800
|
|
SiC MOSFETS
|
SiC
|
SMD/SMT
|
TO-263-7L
|
N-Channel
|
|
|
|
SiC MOSFET 1200V 30mohm (80A a. 25C) SiC MOSFET in TO267-7L
- IXSA80N120L2-7TR
- IXYS
-
1:
12,32 €
-
760Prieinamumas
-
Naujas Produktas
|
„Mouser“ Dalies Nr.
747-IXSA80N120L2-7TR
Naujas Produktas
|
IXYS
|
SiC MOSFET 1200V 30mohm (80A a. 25C) SiC MOSFET in TO267-7L
|
|
760Prieinamumas
|
|
|
12,32 €
|
|
|
8,63 €
|
|
|
7,17 €
|
|
|
6,79 €
|
|
|
6,79 €
|
|
Min.: 1
Daugkart.: 1
:
800
|
|
SiC MOSFETS
|
SiC
|
SMD/SMT
|
TO-263-7L
|
N-Channel
|
|
|
|
SiC MOSFET 1200V 80mohm (40A a. 25C) SiC MOSFET in TO247-4L
- IXSH40N120L2KHV
- IXYS
-
1:
8,51 €
-
394Prieinamumas
-
Naujas Produktas
|
„Mouser“ Dalies Nr.
747-IXSH40N120L2KHV
Naujas Produktas
|
IXYS
|
SiC MOSFET 1200V 80mohm (40A a. 25C) SiC MOSFET in TO247-4L
|
|
394Prieinamumas
|
|
|
8,51 €
|
|
|
5,72 €
|
|
|
4,22 €
|
|
Min.: 1
Daugkart.: 1
|
|
SiC MOSFETS
|
SiC
|
Through Hole
|
TO-247-4L
|
N-Channel
|
|
|
|
SiC MOSFET 1200V 30mohm (80A a. 25C) SiC MOSFET in TO247-4L
- IXSH80N120L2KHV
- IXYS
-
1:
12,79 €
-
392Prieinamumas
-
Naujas Produktas
|
„Mouser“ Dalies Nr.
747-IXSH80N120L2KHV
Naujas Produktas
|
IXYS
|
SiC MOSFET 1200V 30mohm (80A a. 25C) SiC MOSFET in TO247-4L
|
|
392Prieinamumas
|
|
|
12,79 €
|
|
|
8,97 €
|
|
|
7,05 €
|
|
Min.: 1
Daugkart.: 1
|
|
SiC MOSFETS
|
SiC
|
Through Hole
|
TO-247-4L
|
N-Channel
|
|
|
|
SiC MOSFET TO263 1.2KV 40A N-CH SIC
- SCT4036KWATL
- ROHM Semiconductor
-
1:
13,86 €
-
988Prieinamumas
-
Naujas Produktas
|
„Mouser“ Dalies Nr.
755-SCT4036KWATL
Naujas Produktas
|
ROHM Semiconductor
|
SiC MOSFET TO263 1.2KV 40A N-CH SIC
|
|
988Prieinamumas
|
|
|
13,86 €
|
|
|
9,77 €
|
|
|
8,26 €
|
|
|
7,83 €
|
|
Min.: 1
Daugkart.: 1
:
1 000
|
|
SiC MOSFETS
|
SiC
|
SMD/SMT
|
TO-263-7LA
|
N-Channel
|
|
|
|
SiC MOSFET NSF060120D7A0-Q/SOT8070/TO263-
- NSF060120D7A0-QJ
- Nexperia
-
1:
8,30 €
-
477Prieinamumas
-
Naujas Produktas
|
„Mouser“ Dalies Nr.
771-NSF060120D7A0-QJ
Naujas Produktas
|
Nexperia
|
SiC MOSFET NSF060120D7A0-Q/SOT8070/TO263-
|
|
477Prieinamumas
|
|
|
8,30 €
|
|
|
5,68 €
|
|
|
4,24 €
|
|
|
3,97 €
|
|
Min.: 1
Daugkart.: 1
:
800
|
|
SiC MOSFETS
|
SiC
|
SMD/SMT
|
TO-263-7
|
N-Channel
|
|
|
|
SiC MOSFET SiC, MOSFET, 16mO, 1200V, TO-247-4 LP, Industrial
- C3M0016120K1
- Wolfspeed
-
1:
23,67 €
-
850Prieinamumas
|
„Mouser“ Dalies Nr.
941-C3M0016120K1
|
Wolfspeed
|
SiC MOSFET SiC, MOSFET, 16mO, 1200V, TO-247-4 LP, Industrial
|
|
850Prieinamumas
|
|
Min.: 1
Daugkart.: 1
|
|
SiC MOSFETS
|
SiC
|
Through Hole
|
TO-247-4
|
N-Channel
|
|
|
|
SiC MOSFET Gen3 1200V, 40mohm SiC MOSFET, TO-247-4L
- GP3T040A120H
- SemiQ
-
1:
7,22 €
-
120Prieinamumas
-
Naujas Produktas
|
„Mouser“ Dalies Nr.
148-GP3T040A120H
Naujas Produktas
|
SemiQ
|
SiC MOSFET Gen3 1200V, 40mohm SiC MOSFET, TO-247-4L
|
|
120Prieinamumas
|
|
|
7,22 €
|
|
|
4,90 €
|
|
|
4,17 €
|
|
|
3,29 €
|
|
Min.: 1
Daugkart.: 1
|
|
SiC MOSFETS
|
SiC
|
Through Hole
|
TO-247-4L
|
N-Channel
|
|
|
|
SiC MOSFET Gen3 1200V, 80mohm SiC MOSFET, TO-247-4L
- GP3T080A120H
- SemiQ
-
1:
5,28 €
-
85Prieinamumas
-
60Tikėtina 2026-07-03
-
Naujas Produktas
|
„Mouser“ Dalies Nr.
148-GP3T080A120H
Naujas Produktas
|
SemiQ
|
SiC MOSFET Gen3 1200V, 80mohm SiC MOSFET, TO-247-4L
|
|
85Prieinamumas
60Tikėtina 2026-07-03
|
|
|
5,28 €
|
|
|
3,53 €
|
|
|
2,74 €
|
|
|
2,24 €
|
|
Min.: 1
Daugkart.: 1
|
|
SiC MOSFETS
|
SiC
|
Through Hole
|
TO-247-4L
|
N-Channel
|
|
|
|
SiC MOSFET SiC, MOSFET, 21mO, 1200V, TO-247-4 LP, Industrial
- C3M0021120K1
- Wolfspeed
-
1:
16,56 €
-
444Prieinamumas
|
„Mouser“ Dalies Nr.
941-C3M0021120K1
|
Wolfspeed
|
SiC MOSFET SiC, MOSFET, 21mO, 1200V, TO-247-4 LP, Industrial
|
|
444Prieinamumas
|
|
|
16,56 €
|
|
|
10,31 €
|
|
|
9,70 €
|
|
Min.: 1
Daugkart.: 1
|
|
SiC MOSFETS
|
SiC
|
Through Hole
|
TO-247-4
|
N-Channel
|
|
|
|
SiC MOSFET 1700V Through-Hole MOSFET N-Channel SiC
- CDMS24720-170 SL PBFREE
- Central Semiconductor
-
1:
92,11 €
-
30Prieinamumas
-
Naujas Produktas
|
„Mouser“ Dalies Nr.
610-CDMS24720-170SL
Naujas Produktas
|
Central Semiconductor
|
SiC MOSFET 1700V Through-Hole MOSFET N-Channel SiC
|
|
30Prieinamumas
|
|
Min.: 1
Daugkart.: 1
|
|
SiC MOSFETS
|
SiC
|
Through Hole
|
TO-247-3
|
N-Channel
|
|
|
|
SiC MOSFET CoolSiC MOSFET 650 V, 33 mohm G2
- IMW65R033M2HXKSA1
- Infineon Technologies
-
1:
10,99 €
-
237Prieinamumas
-
Naujas Produktas
|
„Mouser“ Dalies Nr.
726-IMW65R033M2HXKSA
Naujas Produktas
|
Infineon Technologies
|
SiC MOSFET CoolSiC MOSFET 650 V, 33 mohm G2
|
|
237Prieinamumas
|
|
|
10,99 €
|
|
|
7,01 €
|
|
|
6,33 €
|
|
|
5,44 €
|
|
|
5,04 €
|
|
Min.: 1
Daugkart.: 1
|
|
SiC MOSFETS
|
SiC
|
Through Hole
|
TO-247-3
|
N-Channel
|
|