TO-247-4 Puslaidininkiai

Pasirinkite Vaizdas Dalies Nr. Gam. Aprašymas Duomenų Lapas Prieinamumas Kainodara (EUR) Filtruokite lentelėje pateiktus rezultatus pagal vieneto kainą, remdamiesi kiekiu. Qty. RoHS
IXYS SiC MOSFET TO247 1200V N CH 20A 546Prieinamumas
Min.: 1
Daugkart.: 1
: 450

IXYS SiC MOSFET SiC MOSFET in TO247-4L HV 550Prieinamumas
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Daugkart.: 1

IXYS SiC MOSFET SiC MOSFET in TO247-4L HV 550Prieinamumas
Min.: 1
Daugkart.: 1

onsemi IGBT FS7 1200V 60A SCR IGBT TO247 4L IGBT STAND-ALONE (LOW COST) 450Prieinamumas
Min.: 1
Daugkart.: 1
Maks.: 45

onsemi IGBT FS7 1200V 60A SCR IGBT TO247 4L COPACK (LOW COST) 435Prieinamumas
Min.: 1
Daugkart.: 1
Maks.: 15

Infineon Technologies SiC MOSFET SILICON CARBIDE MOSFET 437Prieinamumas
Min.: 1
Daugkart.: 1

ROHM Semiconductor SiC MOSFET 650V Nch SiC Trench MOSFET in 4pin Package - SCT3080AR is a trench gate structure SiC MOSFET ideal for server power supplies, solar inverters, and electric vehicle charging stations. A 4pin package that separates the power source terminal and driver 529Prieinamumas
Min.: 1
Daugkart.: 1

Microchip Technology SiC MOSFET MOSFET SIC 1200 V 25 mOhm TO-247-4 Notch 59Prieinamumas
Min.: 1
Daugkart.: 1

Microchip Technology SiC MOSFET MOSFET SIC 1200 V 30 mOhm TO-247-4 Notch 115Prieinamumas
Min.: 1
Daugkart.: 1

Microchip Technology SiC MOSFET MOSFET SIC 1200 V 40 mOhm TO-247-4 Notch 105Prieinamumas
Min.: 1
Daugkart.: 1

Microchip Technology SiC MOSFET MOSFET SIC 1200 V 45 mOhm TO-247-4 Notch 120Prieinamumas
Min.: 1
Daugkart.: 1

Microchip Technology SiC MOSFET MOSFET SIC 1200 V 60 mOhm TO-247-4 Notch 117Prieinamumas
Min.: 1
Daugkart.: 1

ROHM Semiconductor SiC MOSFET 1200V Nch SiC Trench MOSFET in 4pin Package - SCT3105KR is a trench gate structure SiC MOSFET ideal for server power supplies, solar inverters, and electric vehicle charging stations. A 4pin package that separates the power source terminal and driver 87Prieinamumas
Min.: 1
Daugkart.: 1

Microchip Technology SiC MOSFET MOSFET SIC 1200 V 20 mOhm TO-247-4 Notch 25Prieinamumas
Min.: 1
Daugkart.: 1

Infineon Technologies IGBT High speed and low saturation voltage 750 V TRENCHSTOP IGBT7 technology 180Prieinamumas
Min.: 1
Daugkart.: 1

Infineon Technologies IGBT High speed and low saturation voltage 750 V TRENCHSTOP IGBT7 technology 155Prieinamumas
Min.: 1
Daugkart.: 1

Infineon Technologies MOSFETs SILICON CARBIDE MOSFET 238Prieinamumas
Min.: 1
Daugkart.: 1

Infineon Technologies MOSFETs SILICON CARBIDE MOSFET 240Prieinamumas
Min.: 1
Daugkart.: 1

Infineon Technologies MOSFETs SILICON CARBIDE MOSFET 240Prieinamumas
Min.: 1
Daugkart.: 1

Infineon Technologies SiC MOSFET SILICON CARBIDE MOSFET 183Prieinamumas
Min.: 1
Daugkart.: 1

Infineon Technologies SiC MOSFET CoolSiC 1400 V SiC MOSFET G2 with .XT interconnection technology 146Prieinamumas
Min.: 1
Daugkart.: 1

Infineon Technologies SiC MOSFET CoolSiC 1400 V SiC MOSFET G2 with .XT interconnection technology 126Prieinamumas
240Tikėtina 2026-07-02
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Daugkart.: 1

Infineon Technologies SiC MOSFET CoolSiC 1400 V SiC MOSFET G2 with .XT interconnection technology 358Prieinamumas
240Pagal užsakymą
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Daugkart.: 1

onsemi IGBT 1200V/40A FS7 IGBT NSCR TO247 422Prieinamumas
Min.: 1
Daugkart.: 1
Maks.: 20

Microchip Technology SiC MOSFET MOSFET SIC 3300V 80 mOhm TO-247-4L-Notch 979Prieinamumas
Min.: 1
Daugkart.: 1