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|
SiC MOSFET TO247 1200V N CH 20A
- IXSH20N120L2KHV
- IXYS
-
1:
6,40 €
-
546Prieinamumas
-
Naujas Produktas
|
„Mouser“ Dalies Nr.
747-IXSH20N120L2KHV
Naujas Produktas
|
IXYS
|
SiC MOSFET TO247 1200V N CH 20A
|
|
546Prieinamumas
|
|
|
6,40 €
|
|
|
4,33 €
|
|
|
2,84 €
|
|
|
2,84 €
|
|
Min.: 1
Daugkart.: 1
:
450
|
|
|
|
|
SiC MOSFET SiC MOSFET in TO247-4L HV
- IXSH40N65L2KHV
- IXYS
-
1:
7,79 €
-
550Prieinamumas
-
Naujas Produktas
|
„Mouser“ Dalies Nr.
747-IXSH40N65L2KHV
Naujas Produktas
|
IXYS
|
SiC MOSFET SiC MOSFET in TO247-4L HV
|
|
550Prieinamumas
|
|
|
7,79 €
|
|
|
5,31 €
|
|
|
3,69 €
|
|
Min.: 1
Daugkart.: 1
|
|
|
|
|
SiC MOSFET SiC MOSFET in TO247-4L HV
- IXSH60N65L2KHV
- IXYS
-
1:
9,36 €
-
550Prieinamumas
-
Naujas Produktas
|
„Mouser“ Dalies Nr.
747-IXSH60N65L2KHV
Naujas Produktas
|
IXYS
|
SiC MOSFET SiC MOSFET in TO247-4L HV
|
|
550Prieinamumas
|
|
|
9,36 €
|
|
|
6,45 €
|
|
|
4,69 €
|
|
Min.: 1
Daugkart.: 1
|
|
|
|
|
IGBT FS7 1200V 60A SCR IGBT TO247 4L IGBT STAND-ALONE (LOW COST)
- AFGH4L60T120RW-STD
- onsemi
-
1:
8,08 €
-
450Prieinamumas
-
Naujas Produktas
|
„Mouser“ Dalies Nr.
863-FGH4L60T120RWSTD
Naujas Produktas
|
onsemi
|
IGBT FS7 1200V 60A SCR IGBT TO247 4L IGBT STAND-ALONE (LOW COST)
|
|
450Prieinamumas
|
|
Min.: 1
Daugkart.: 1
Maks.: 45
|
|
|
|
|
IGBT FS7 1200V 60A SCR IGBT TO247 4L COPACK (LOW COST)
- AFGH4L60T120RWD-STD
- onsemi
-
1:
9,19 €
-
435Prieinamumas
-
Naujas Produktas
|
„Mouser“ Dalies Nr.
863-GH4L60T120RWDSTD
Naujas Produktas
|
onsemi
|
IGBT FS7 1200V 60A SCR IGBT TO247 4L COPACK (LOW COST)
|
|
435Prieinamumas
|
|
Min.: 1
Daugkart.: 1
Maks.: 15
|
|
|
|
|
SiC MOSFET SILICON CARBIDE MOSFET
- IMZA65R107M1HXKSA1
- Infineon Technologies
-
1:
5,74 €
-
437Prieinamumas
-
Netinkama eksploatuoti
|
„Mouser“ Dalies Nr.
726-IMZA65R107M1HXKS
Netinkama eksploatuoti
|
Infineon Technologies
|
SiC MOSFET SILICON CARBIDE MOSFET
|
|
437Prieinamumas
|
|
|
5,74 €
|
|
|
3,76 €
|
|
|
3,15 €
|
|
|
3,14 €
|
|
Min.: 1
Daugkart.: 1
|
|
|
|
|
SiC MOSFET 650V Nch SiC Trench MOSFET in 4pin Package - SCT3080AR is a trench gate structure SiC MOSFET ideal for server power supplies, solar inverters, and electric vehicle charging stations. A 4pin package that separates the power source terminal and driver
- SCT3080ARC14
- ROHM Semiconductor
-
1:
18,61 €
-
529Prieinamumas
-
NRND
|
„Mouser“ Dalies Nr.
755-SCT3080ARC14
NRND
|
ROHM Semiconductor
|
SiC MOSFET 650V Nch SiC Trench MOSFET in 4pin Package - SCT3080AR is a trench gate structure SiC MOSFET ideal for server power supplies, solar inverters, and electric vehicle charging stations. A 4pin package that separates the power source terminal and driver
|
|
529Prieinamumas
|
|
Min.: 1
Daugkart.: 1
|
|
|
|
|
SiC MOSFET MOSFET SIC 1200 V 25 mOhm TO-247-4 Notch
- MSC025SMB120B4N
- Microchip Technology
-
1:
11,69 €
-
59Prieinamumas
-
Naujas Produktas
|
„Mouser“ Dalies Nr.
579-MSC025SMB120B4N
Naujas Produktas
|
Microchip Technology
|
SiC MOSFET MOSFET SIC 1200 V 25 mOhm TO-247-4 Notch
|
|
59Prieinamumas
|
|
Min.: 1
Daugkart.: 1
|
|
|
|
|
SiC MOSFET MOSFET SIC 1200 V 30 mOhm TO-247-4 Notch
- MSC030SMB120B4N
- Microchip Technology
-
1:
10,04 €
-
115Prieinamumas
-
Naujas Produktas
|
„Mouser“ Dalies Nr.
579-MSC030SMB120B4N
Naujas Produktas
|
Microchip Technology
|
SiC MOSFET MOSFET SIC 1200 V 30 mOhm TO-247-4 Notch
|
|
115Prieinamumas
|
|
Min.: 1
Daugkart.: 1
|
|
|
|
|
SiC MOSFET MOSFET SIC 1200 V 40 mOhm TO-247-4 Notch
- MSC040SMB120B4N
- Microchip Technology
-
1:
8,21 €
-
105Prieinamumas
-
Naujas Produktas
|
„Mouser“ Dalies Nr.
579-MSC040SMB120B4N
Naujas Produktas
|
Microchip Technology
|
SiC MOSFET MOSFET SIC 1200 V 40 mOhm TO-247-4 Notch
|
|
105Prieinamumas
|
|
Min.: 1
Daugkart.: 1
|
|
|
|
|
SiC MOSFET MOSFET SIC 1200 V 45 mOhm TO-247-4 Notch
- MSC045SMB120B4N
- Microchip Technology
-
1:
7,64 €
-
120Prieinamumas
-
Naujas Produktas
|
„Mouser“ Dalies Nr.
579-MSC045SMB120B4N
Naujas Produktas
|
Microchip Technology
|
SiC MOSFET MOSFET SIC 1200 V 45 mOhm TO-247-4 Notch
|
|
120Prieinamumas
|
|
Min.: 1
Daugkart.: 1
|
|
|
|
|
SiC MOSFET MOSFET SIC 1200 V 60 mOhm TO-247-4 Notch
- MSC060SMB120B4N
- Microchip Technology
-
1:
6,29 €
-
117Prieinamumas
-
Naujas Produktas
|
„Mouser“ Dalies Nr.
579-MSC060SMB120B4N
Naujas Produktas
|
Microchip Technology
|
SiC MOSFET MOSFET SIC 1200 V 60 mOhm TO-247-4 Notch
|
|
117Prieinamumas
|
|
Min.: 1
Daugkart.: 1
|
|
|
|
|
SiC MOSFET 1200V Nch SiC Trench MOSFET in 4pin Package - SCT3105KR is a trench gate structure SiC MOSFET ideal for server power supplies, solar inverters, and electric vehicle charging stations. A 4pin package that separates the power source terminal and driver
- SCT3105KRC14
- ROHM Semiconductor
-
1:
19,71 €
-
87Prieinamumas
-
NRND
|
„Mouser“ Dalies Nr.
755-SCT3105KRC14
NRND
|
ROHM Semiconductor
|
SiC MOSFET 1200V Nch SiC Trench MOSFET in 4pin Package - SCT3105KR is a trench gate structure SiC MOSFET ideal for server power supplies, solar inverters, and electric vehicle charging stations. A 4pin package that separates the power source terminal and driver
|
|
87Prieinamumas
|
|
Min.: 1
Daugkart.: 1
|
|
|
|
|
SiC MOSFET MOSFET SIC 1200 V 20 mOhm TO-247-4 Notch
- MSC020SMB120B4N
- Microchip Technology
-
1:
14,12 €
-
25Prieinamumas
-
Naujas Produktas
|
„Mouser“ Dalies Nr.
579-MSC020SMB120B4N
Naujas Produktas
|
Microchip Technology
|
SiC MOSFET MOSFET SIC 1200 V 20 mOhm TO-247-4 Notch
|
|
25Prieinamumas
|
|
Min.: 1
Daugkart.: 1
|
|
|
|
|
IGBT High speed and low saturation voltage 750 V TRENCHSTOP IGBT7 technology
- IKY120N75EH7XKSA1
- Infineon Technologies
-
1:
8,33 €
-
180Prieinamumas
-
Naujas Produktas
|
„Mouser“ Dalies Nr.
726-IKY120N75EH7XKSA
Naujas Produktas
|
Infineon Technologies
|
IGBT High speed and low saturation voltage 750 V TRENCHSTOP IGBT7 technology
|
|
180Prieinamumas
|
|
|
8,33 €
|
|
|
5,71 €
|
|
|
4,07 €
|
|
Min.: 1
Daugkart.: 1
|
|
|
|
|
IGBT High speed and low saturation voltage 750 V TRENCHSTOP IGBT7 technology
- IKY150N75EH7XKSA1
- Infineon Technologies
-
1:
9,11 €
-
155Prieinamumas
-
Naujas Produktas
|
„Mouser“ Dalies Nr.
726-IKY150N75EH7XKSA
Naujas Produktas
|
Infineon Technologies
|
IGBT High speed and low saturation voltage 750 V TRENCHSTOP IGBT7 technology
|
|
155Prieinamumas
|
|
|
9,11 €
|
|
|
6,27 €
|
|
|
4,58 €
|
|
Min.: 1
Daugkart.: 1
|
|
|
|
|
MOSFETs SILICON CARBIDE MOSFET
- IMZA40R025M2HXKSA1
- Infineon Technologies
-
1:
9,99 €
-
238Prieinamumas
-
Naujas Produktas
|
„Mouser“ Dalies Nr.
726-IMZA40R025M2HXKS
Naujas Produktas
|
Infineon Technologies
|
MOSFETs SILICON CARBIDE MOSFET
|
|
238Prieinamumas
|
|
|
9,99 €
|
|
|
7,22 €
|
|
|
6,02 €
|
|
|
5,37 €
|
|
|
5,01 €
|
|
Min.: 1
Daugkart.: 1
|
|
|
|
|
MOSFETs SILICON CARBIDE MOSFET
- IMZA40R036M2HXKSA1
- Infineon Technologies
-
1:
8,18 €
-
240Prieinamumas
-
Naujas Produktas
|
„Mouser“ Dalies Nr.
726-IMZA40R036M2HXKS
Naujas Produktas
|
Infineon Technologies
|
MOSFETs SILICON CARBIDE MOSFET
|
|
240Prieinamumas
|
|
|
8,18 €
|
|
|
5,59 €
|
|
|
4,61 €
|
|
|
4,10 €
|
|
|
3,84 €
|
|
Min.: 1
Daugkart.: 1
|
|
|
|
|
MOSFETs SILICON CARBIDE MOSFET
- IMZA40R045M2HXKSA1
- Infineon Technologies
-
1:
7,13 €
-
240Prieinamumas
-
Naujas Produktas
|
„Mouser“ Dalies Nr.
726-IMZA40R045M2HXKS
Naujas Produktas
|
Infineon Technologies
|
MOSFETs SILICON CARBIDE MOSFET
|
|
240Prieinamumas
|
|
|
7,13 €
|
|
|
5,01 €
|
|
|
4,06 €
|
|
|
3,60 €
|
|
|
3,20 €
|
|
Min.: 1
Daugkart.: 1
|
|
|
|
|
SiC MOSFET SILICON CARBIDE MOSFET
- IMZA65R075M2HXKSA1
- Infineon Technologies
-
1:
7,12 €
-
183Prieinamumas
-
Naujas Produktas
|
„Mouser“ Dalies Nr.
726-IMZA65R075M2HXKS
Naujas Produktas
|
Infineon Technologies
|
SiC MOSFET SILICON CARBIDE MOSFET
|
|
183Prieinamumas
|
|
|
7,12 €
|
|
|
4,76 €
|
|
|
3,83 €
|
|
|
3,40 €
|
|
|
3,02 €
|
|
Min.: 1
Daugkart.: 1
|
|
|
|
|
SiC MOSFET CoolSiC 1400 V SiC MOSFET G2 with .XT interconnection technology
- IMZC140R024M2HXKSA1
- Infineon Technologies
-
1:
15,29 €
-
146Prieinamumas
-
Naujas Produktas
|
„Mouser“ Dalies Nr.
726-IMZC140R024M2HXK
Naujas Produktas
|
Infineon Technologies
|
SiC MOSFET CoolSiC 1400 V SiC MOSFET G2 with .XT interconnection technology
|
|
146Prieinamumas
|
|
|
15,29 €
|
|
|
11,64 €
|
|
|
9,70 €
|
|
|
8,64 €
|
|
|
8,08 €
|
|
Min.: 1
Daugkart.: 1
|
|
|
|
|
SiC MOSFET CoolSiC 1400 V SiC MOSFET G2 with .XT interconnection technology
- IMZC140R029M2HXKSA1
- Infineon Technologies
-
1:
12,75 €
-
126Prieinamumas
-
240Tikėtina 2026-07-02
-
Naujas Produktas
|
„Mouser“ Dalies Nr.
726-IMZC140R029M2HXK
Naujas Produktas
|
Infineon Technologies
|
SiC MOSFET CoolSiC 1400 V SiC MOSFET G2 with .XT interconnection technology
|
|
126Prieinamumas
240Tikėtina 2026-07-02
|
|
|
12,75 €
|
|
|
8,48 €
|
|
|
6,95 €
|
|
|
6,49 €
|
|
Min.: 1
Daugkart.: 1
|
|
|
|
|
SiC MOSFET CoolSiC 1400 V SiC MOSFET G2 with .XT interconnection technology
- IMZC140R038M2HXKSA1
- Infineon Technologies
-
1:
10,80 €
-
358Prieinamumas
-
240Pagal užsakymą
-
Naujas Produktas
|
„Mouser“ Dalies Nr.
726-IMZC140R038M2HXK
Naujas Produktas
|
Infineon Technologies
|
SiC MOSFET CoolSiC 1400 V SiC MOSFET G2 with .XT interconnection technology
|
|
358Prieinamumas
240Pagal užsakymą
|
|
|
10,80 €
|
|
|
7,22 €
|
|
|
6,54 €
|
|
|
5,55 €
|
|
Min.: 1
Daugkart.: 1
|
|
|
|
|
IGBT 1200V/40A FS7 IGBT NSCR TO247
- FGH4L40T120SWD
- onsemi
-
1:
6,11 €
-
422Prieinamumas
-
Naujas Produktas
|
„Mouser“ Dalies Nr.
863-FGH4L40T120SWD
Naujas Produktas
|
onsemi
|
IGBT 1200V/40A FS7 IGBT NSCR TO247
|
|
422Prieinamumas
|
|
Min.: 1
Daugkart.: 1
Maks.: 20
|
|
|
|
|
SiC MOSFET MOSFET SIC 3300V 80 mOhm TO-247-4L-Notch
- MSC080SMA330B4N
- Microchip Technology
-
1:
55,37 €
-
979Prieinamumas
-
Naujas Produktas
|
„Mouser“ Dalies Nr.
579-MSC080SMA330B4N
Naujas Produktas
|
Microchip Technology
|
SiC MOSFET MOSFET SIC 3300V 80 mOhm TO-247-4L-Notch
|
|
979Prieinamumas
|
|
Min.: 1
Daugkart.: 1
|
|
|