NTBL045N065SC1

onsemi
863-NTBL045N065SC1
NTBL045N065SC1

Gam.:

Aprašymas:
SiC MOSFET SIC MOS TOLL 650V

Duomenų Lapas:
ECAD modelis:
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Prieinamumas: 1 374

Turime sandėlyje:
1 374 Galime išsiųsti iš karto
Gamintojo numatytas pristatymo laikas
20 Savaičių Apytikriai apskaičiuotas gamybos laikas gamykloje, jei dalių kiekis didesnis nei nurodyta.
Didesniam nei 1374 kiekiui taikomi minimalaus užsakymo reikalavimai.
Min. 1   Užsakoma po 1
Vieneto kaina:
-,-- €
Plėt. Kaina:
-,-- €
Numatomas Įkainis:

Kainodara (EUR)

Qty. Vieneto kaina
Plėt. Kaina
10,68 € 10,68 €
6,78 € 67,80 €
6,63 € 663,00 €
6,19 € 6 190,00 €
Visa Ritė (Užsakoma po 2000)
5,63 € 11 260,00 €

Produkto Požymis Atributo vertė Pasirinkite Požymį
onsemi
Gaminio kategorija: SiC MOSFET
RoHS:  
REACH - SVHC:
SMD/SMT
PSOF-8
N-Channel
1 Channel
650 V
73 A
50 mOhms
- 8 V, + 22 V
4.3 V
105 nC
- 55 C
+ 175 C
348 W
Enhancement
EliteSiC
Prekės Ženklas: onsemi
Configuration: Single
Rudens laikas: 7 ns
Tiesioginis laidumas - min: 16 S
Pakavimas: Reel
Pakavimas: Cut Tape
Gaminio tipas: SiC MOSFETS
Kilimo Laikas: 14 ns
Serija: NTBL045N065SC1
Gamyklinės pakuotės kiekis: 2000
Subkategorija: Transistors
Technologijos: SiC
Tipinė išjungimo vėlinimo trukmė: 26 ns
Tipinė įjungimo vėlinimo trukmė: 13 ns
Rasta produktų:
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Pasirinkti atributai: 0

TARIC:
8541290000
CAHTS:
8541290000
USHTS:
8541290065
JPHTS:
854129000
MXHTS:
8541299900
ECCN:
EAR99

M2 EliteSiC MOSFETs

onsemi M2 EliteSiC MOSFETs feature voltage options of 650V, 750V, and 1200V. The onsemi M2 MOSFETs come in various packages, including D2PAK7, H-PSOF8L, TDFN4 8x8, TO-247-3LD, and TO-247-4LD. The MOSFETs provide flexibility in design and implementation. Additionally, the M2 EliteSiC MOSFETs boast a maximum gate-to-source voltage of +22V/-8V, low RDS(on), and high short circuit withstand time (SCWT).

650V Silicon Carbide (SiC) MOSFETs

onsemi 650V Silicon Carbide (SiC) MOSFETs provide superior switching performance and higher reliability compared to Silicon (Si). These 650V SiC MOSFETs have low ON resistance and a compact chip size to ensure low capacitance and gate charge. Benefits include high efficiency, fast operation frequency, increased power density, reduced EMI, and reduced system size.

Cloud Power Management Solutions

onsemi Cloud Power Management Solutions offers computing and connectivity essential for infrastructure. onsemi Cloud Power Management Solutions' power is critical for processors, memory banks, and wireless base stations. As operations shift to the Cloud, the importance of efficiency and reliability grows. AI servers, in particular, require a reliable power source to ensure optimal performance and efficiency, making solutions crucial for maintaining the integrity and functionality of AI-driven operations. onsemi provides diverse solutions for AC-DC conversion, multiphase conversion, point-of-load supplies, and hot-swap protection to support various power needs in cloud infrastructure. Cutting-edge technology, dependable performance, and deep application expertise make onsemi an ideal partner for powering data in today’s environment, whether in base stations, servers, or data centers.

Heat Pumps

The heat pump stands as a cornerstone of the global shift towards secure and sustainable heating, harnessing low-emissions electricity to provide reliable warmth. While its primary function is heating, innovative reverse cycle models also offer cooling capabilities. Moreover, by efficiently recovering waste heat and elevating its temperature to practical levels, heat pumps hold immense potential for energy conservation. As businesses pivot towards a low-carbon future, there's a growing demand for more efficient power semiconductors. Balancing cost, footprint, and efficiency is paramount in this pursuit. onsemi Intelligent Power Modules (IPMs) emerge as a noteworthy solution within the heat pump market, offering compact design, high power density, and advanced control features.

NTBL045N065SC1 33mohm Silicon Carbide MOSFET

onsemi NTBL045N065SC1 33mohm Silicon Carbide MOSFET is housed in a TOLL NTBL045N065SC1 package and designed to be fast and rugged. The devices offer a 10x higher dielectric breakdown field strength and 2x higher electron saturation velocity. The MOSFETs also offer a 3x higher energy band gap and 3x higher thermal conductivity. All onsemi SiC MOSFETs include AEC-Q101 qualified and PPAP-capable options specifically engineered and qualified for automotive and industrial applications.

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