GS66516B 650V GaN Bottom-side Cooled Transistor

GaN Systems GS66516B 650V GaN power transistor is designed for very low junction-to-case thermal resistance for demanding high power applications. The GS66516B is offered in a low inductance, low thermal resistance GaNPX™ package with a bottom-side cooled configuration. GaN on silicon power transistors allows for high current, high voltage breakdown, and high switching frequency.