1EDB7275FXUMA1

Infineon Technologies
726-1EDB7275FXUMA1
1EDB7275FXUMA1

Gam.:

Aprašymas:
Gate Tvarkyklės ISOLATED DRIVER

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Prieinamumas: 6 782

Turime sandėlyje:
6 782
Galime išsiųsti iš karto
Pagal užsakymą:
5 000
Tikėtina 2026-05-14
Gamintojo numatytas pristatymo laikas
39
Savaičių Apytikriai apskaičiuotas gamybos laikas gamykloje, jei dalių kiekis didesnis nei nurodyta.
Min. 1   Užsakoma po 1
Vieneto kaina:
-,-- €
Plėt. Kaina:
-,-- €
Numatomas Įkainis:
Pakuotė:
Visa Ritė (Užsakoma po 2500)

Kainodara (EUR)

Qty. Vieneto kaina
Plėt. Kaina
Nukerpama juosta / „MouseReel™“ †
1,54 € 1,54 €
1,13 € 11,30 €
1,02 € 25,50 €
0,912 € 91,20 €
0,852 € 213,00 €
0,683 € 341,50 €
0,636 € 636,00 €
Visa Ritė (Užsakoma po 2500)
0,614 € 1 535,00 €
0,606 € 4 545,00 €
† 5,00 € „MouseReel™“ mokestis bus pridėtas ir apskaičiuotas jūsų pirkinių krepšelyje. Visi „MouseReel™“ užsakymai neatšaukiami ir negrąžinami. ↩

Produkto Požymis Atributo vertė Pasirinkite Požymį
Infineon
Gaminio kategorija: Gate Tvarkyklės
RoHS:  
Isolated Gate Drivers
SMD/SMT
1 Driver
1 Output
9.8 A
3 V
15 V
8.3 ns
5 ns
- 40 C
+ 125 C
Reel
Cut Tape
MouseReel
Prekės Ženklas: Infineon Technologies
Jautrus drėgmei: Yes
Gaminio tipas: Gate Drivers
Gamyklinės pakuotės kiekis: 2500
Subkategorija: PMIC - Power Management ICs
Prekinis pavadinimas: EiceDRIVER
Dalies Nr., kitokios klasifikacijos numeriai: 1EDB7275F SP005351350
Rasta produktų:
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Pasirinkti atributai: 0

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CNHTS:
8542399000
USHTS:
8542310030
ECCN:
EAR99

EiceDRIVER™ Gate Driver ICs

Infineon EiceDRIVER™ Gate Driver ICs are designed for MOSFETs, IGBTs, SiC MOSFETs, and GaN HEMTs devices. EiceDRIVER™ gate drivers provide a wide range of typical output current options, from 0.1A up to 10A. These devices have robust gate drive protection features such as fast short-circuit protection (DESAT), active Miller clamp, shoot-through protection, fault, shutdown, and over current protection. These features make these driver ICs well-suited for both silicon and wide-bandgap power devices, including CoolGaN™, and CoolSiC™. That’s why Infineon offers more than 500 EiceDRIVER™ gate driver IC solutions suitable for any power switch, and any application.

EiceDRIVER™ Isolated & Non-Isolated Gate Drivers

Infineon EiceDRIVER™ Isolated and Non-Isolated Gate Drivers provide optimized low- and high-voltage gate driver solutions for MOSFETs, IGBTs, and IGBT modules. These isolated and non-isolated gate driver ICs are designed to build reliable and efficient applications. An optimum gate drive configuration is essential for all power switches, whether they are in discrete form or in a power module. Infineon gate drivers provide a wide range of typical output current options, from 0.1A up to 10A, suitable for any power device size.

Experience the Difference in Power

Infineon is the leader in the power semiconductor market. With more than 20 years of experience and as the innovator of the revolutionary CoolMOS™ super junction MOSFET technology, Infineon continues pioneering in the power management field. Customers can select based on individual design/system requirements from the industry's broadest silicon-based SJ MOSFET portfolio. As one of the few manufacturers mastering all three main power technologies, Infineon complements this assortment with a groundbreaking wide bandgap (WBG) offering. This offering comprises silicon-carbide-based CoolSiC™ MOSFETs, matching diodes, and gallium-nitride-based CoolGaN™ e-mode HEMTs. Solutions are available, ranging from exceptional price performance through unrivaled robustness to best-in-class devices. This enables customers to build more efficient, environmentally friendly, sustainable applications.

CoolGaN™ Gallium Nitride e-mode HEMTs

Infineon CoolGaN™ Gallium Nitride e-mode HEMTs offer excellent advantages, including ultimate efficiency, reliability, power density, and high quality over silicon. CoolGaN is a high-performance transistor technology for power conversion in the voltage range of up to 600V. The lateral transistor structure of CoolGAN features a very low gate and output charge, fast switching, and no body diode or reverse recovery charge. These characteristics result in the transistors being used to design very high-efficiency and high-frequency power-conversion circuits. Infineon’s CoolGaN is made with a self-clamping p-gate structure.

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