|
|
MOSFETs HIGH POWER_NEW
- IPW65R060CFD7XKSA1
- Infineon Technologies
-
1:
6,25 €
-
272Prieinamumas
|
„Mouser“ Dalies Nr.
726-IPW65R060CFD7SA1
|
Infineon Technologies
|
MOSFETs HIGH POWER_NEW
|
|
272Prieinamumas
|
|
|
6,25 €
|
|
|
3,56 €
|
|
|
3,09 €
|
|
|
2,81 €
|
|
Min.: 1
Daugkart.: 1
|
|
|
Si
|
Through Hole
|
TO-247-3
|
N-Channel
|
1 Channel
|
650 V
|
36 A
|
60 mOhms
|
- 10 V, 10 V
|
3.5 V
|
68 nC
|
- 55 C
|
+ 150 C
|
171 W
|
Enhancement
|
Tube
|
|
|
|
MOSFETs HIGH POWER_NEW
- IPZA65R029CFD7XKSA1
- Infineon Technologies
-
1:
10,54 €
-
240Prieinamumas
|
„Mouser“ Dalies Nr.
726-IPZA65R029CFD7XK
|
Infineon Technologies
|
MOSFETs HIGH POWER_NEW
|
|
240Prieinamumas
|
|
|
10,54 €
|
|
|
6,36 €
|
|
|
5,59 €
|
|
Min.: 1
Daugkart.: 1
|
|
|
Si
|
Through Hole
|
TO-247-4
|
N-Channel
|
1 Channel
|
650 V
|
69 A
|
29 mOhms
|
- 20 V, 20 V
|
4.5 V
|
145 nC
|
- 55 C
|
+ 150 C
|
305 W
|
Enhancement
|
Tube
|
|
|
|
MOSFETs HIGH POWER_NEW
- IPW65R041CFD7XKSA1
- Infineon Technologies
-
1:
7,67 €
-
316Prieinamumas
|
„Mouser“ Dalies Nr.
726-IPW65R041CFD7XKS
|
Infineon Technologies
|
MOSFETs HIGH POWER_NEW
|
|
316Prieinamumas
|
|
|
7,67 €
|
|
|
4,51 €
|
|
|
3,82 €
|
|
|
3,68 €
|
|
Min.: 1
Daugkart.: 1
|
|
|
Si
|
Through Hole
|
TO-247-3
|
N-Channel
|
1 Channel
|
700 V
|
68.5 A
|
41 mOhms
|
- 20 V, 20 V
|
4 V
|
102 nC
|
- 55 C
|
+ 150 C
|
500 W
|
Enhancement
|
Tube
|
|
|
|
MOSFETs HIGH POWER_NEW
- IPP65R041CFD7XKSA1
- Infineon Technologies
-
1:
6,87 €
-
318Prieinamumas
|
„Mouser“ Dalies Nr.
726-IPP65R041CFD7XKS
|
Infineon Technologies
|
MOSFETs HIGH POWER_NEW
|
|
318Prieinamumas
|
|
|
6,87 €
|
|
|
3,37 €
|
|
|
3,19 €
|
|
Min.: 1
Daugkart.: 1
|
|
|
Si
|
Through Hole
|
|
N-Channel
|
1 Channel
|
650 V
|
50 A
|
41 mOhms
|
- 20 V, 20 V
|
4.5 V
|
102 nC
|
- 55 C
|
+ 150 C
|
227 W
|
Enhancement
|
Tube
|
|
|
|
MOSFETs HIGH POWER_NEW
- IPP65R060CFD7XKSA1
- Infineon Technologies
-
1:
5,67 €
-
151Prieinamumas
|
„Mouser“ Dalies Nr.
726-IPP65R060CFD7SA1
|
Infineon Technologies
|
MOSFETs HIGH POWER_NEW
|
|
151Prieinamumas
|
|
|
5,67 €
|
|
|
3,04 €
|
|
|
2,78 €
|
|
|
2,47 €
|
|
Min.: 1
Daugkart.: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
650 V
|
36 A
|
60 mOhms
|
- 10 V, 10 V
|
4.5 V
|
68 nC
|
- 55 C
|
+ 150 C
|
171 W
|
Enhancement
|
Tube
|
|
|
|
MOSFETs HIGH POWER_NEW
- IPW65R029CFD7XKSA1
- Infineon Technologies
-
1:
9,55 €
-
136Prieinamumas
|
„Mouser“ Dalies Nr.
726-IPW65R029CFD7XKS
|
Infineon Technologies
|
MOSFETs HIGH POWER_NEW
|
|
136Prieinamumas
|
|
|
9,55 €
|
|
|
6,11 €
|
|
|
5,32 €
|
|
Min.: 1
Daugkart.: 1
|
|
|
Si
|
Through Hole
|
TO-247-3
|
N-Channel
|
1 Channel
|
700 V
|
69 A
|
29 mOhms
|
- 20 V, 20 V
|
4.5 V
|
145 nC
|
- 55 C
|
+ 150 C
|
305 W
|
Enhancement
|
Tube
|
|