FGH4L40Tx 1200V/40A Field Stop Power IGBTs

onsemi FGH4L40Tx 1200V/40A Field Stop Power Insulated-Gate Bipolar Transistors (IGBTs) are engineered for high-efficiency switching in demanding power applications. These IGBTs feature low conduction and switching losses, ideal for use in motor drives, Uninterruptible Power Supply (UPS) systems, and renewable energy inverters. With robust short-circuit capability and soft switching performance, the IGBTs support high-frequency operation while maintaining thermal stability. The optimized design of the onsemi Field Stop technology-based FGH4L40Tx IGBTs enable reliable performance in both hard- and soft-switching topologies, helping designers meet stringent efficiency and power density requirements in industrial and energy-focused systems.

Rezultatai: 3
Pasirinkite Vaizdas Dalies Nr.
 Gam.
Aprašymas Duomenų Lapas Prieinamumas Kainodara (EUR) Filtruokite lentelėje pateiktus rezultatus pagal vieneto kainą, remdamiesi kiekiu.
Qty. RoHS ECAD modelis Technologijos
Pakuotė / Korpusas
Montavimo stilius
Configuration
Collector- Emitter Voltage VCEO Max
Kolektoriaus ir Emiterio Stoties Įtampa
Didžiausia vartų emiterio įtampa
Nuolatinė kolektoriaus srovė esant 25 C
Pd - skaidos galia
Minimali darbinė temperatūra
Didžiausia darbinė temperatūra
Serija
Pakavimas
onsemi IGBT FS7 1200V 40A SCR IGBT TO247 4L COPACK
Duomenų Lapas
443Prieinamumas
Min.: 1
Daugkart.: 1

Si TO-247-3 Through Hole Single 1.2 kV 1.49 V 30 V 80 A 600 W - 55 C + 175 C FGH4L40T120RWD Tube
onsemi IGBT 1200V/40A FS7 IGBT NSCR TO247
Duomenų Lapas
428Prieinamumas
Min.: 1
Daugkart.: 1

Si TO-247-4 Through Hole SIngle 1.2 kV 1.65 V 20 V 80 A 384 W - 55 C + 175 C FGH4L40T120SWD Tube

onsemi IGBT IGBT, 1200V, 40A, Ultra Field Stop, Fast-switching Co-packed Diode.
Duomenų Lapas
384Prieinamumas
Min.: 1
Daugkart.: 1

Si TO-247-4 Through Hole Single 1.2 kV 1.55 V - 20 V, 20 V 80 A 306 W - 55 C + 175 C FGH4L40T120LQD Tube