E Series High Voltage MOSFETs

Vishay Siliconix E Series High Voltage MOSFETs are super junction N-Channel power MOSFETs with a 30% reduction in specific on-resistance versus the S Series MOSFETs. These E Series high-performance MOSFETs feature low on-resistance (RDS(ON)), low input capacitance (Ciss), reduced capacitive switching losses, and ultra-low gate charge (Qg). E series MOSFETs are available in 800VDS high-voltage variants with drain current (ID) that ranges from 2.8A to 17.4A. Also, new Vishay Siliconix 600V E Series MOSFETs have been added to the PowerPAK® 8x8 surface mount package. Typical applications include server and telecom power supplies, lighting, industrial, battery chargers, renewable energy, and SMPS.  

Rezultatai: 39
Pasirinkite Vaizdas Dalies Nr. Gam. Aprašymas Duomenų Lapas Prieinamumas Kainodara (EUR) Filtruokite lentelėje pateiktus rezultatus pagal vieneto kainą, remdamiesi kiekiu. Qty. RoHS ECAD modelis Technologijos Montavimo stilius Pakuotė / Korpusas Tranzistoriaus poliškumas Kanalų skaičius Vds - nutekėjimo-šaltinio pramušimo įtampa svar. – nuolatinio išleidimo srovė RDS On - Drain-Source Varža Vgs - užtūros-šaltinio įtampa Vgs th - užtūros-šaltinio slenkstinė įtampa Qg – vartų krūvis Minimali darbinė temperatūra Didžiausia darbinė temperatūra Pd - skaidos galia Kanalas Mode Pakavimas
Vishay / Siliconix MOSFETs TO220 800V 5.4A N-CH MOSFET 677Prieinamumas
Min.: 1
Daugkart.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 800 V 5.4 A 820 mOhms - 30 V, 30 V 4 V 44 nC - 55 C + 150 C 78 W Enhancement Tube
Vishay / Siliconix MOSFETs TO220 800V 7.5A N-CH MOSFET 1 000Prieinamumas
Min.: 1
Daugkart.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 800 V 7.5 A 205 mOhms - 30 V, 30 V 4 V 48 nC - 55 C + 155 C 33 W Enhancement Tube
Vishay / Siliconix MOSFETs TO263 650V 24A N-CH MOSFET 2 819Prieinamumas
Min.: 1
Daugkart.: 1
Reel: 800

Si SMD/SMT D²PAK-2 N-Channel 1 Channel 650 V 24 A 156 mOhms - 30 V, 30 V 4 V 81 nC - 55 C + 150 C 250 W Enhancement Reel, Cut Tape, MouseReel
Vishay Semiconductors MOSFETs N-CHANNEL 600V 490Prieinamumas
Min.: 1
Daugkart.: 1
Reel: 2 000

Si SMD/SMT PowerPak-9 N-Channel 1 Channel 600 V 48 A 49 mOhms - 30 V, 30 V 5 V 65 nC - 55 C + 150 C 278 W Enhancement Reel, Cut Tape, MouseReel
Vishay / Siliconix MOSFETs N-CHANNEL 800V E Series Pwr MOSFET 262Prieinamumas
1 000Tikėtina 2026-02-19
Min.: 1
Daugkart.: 1

Si SMD/SMT TO-263-4 N-Channel 1 Channel 800 V 21 A 184 mOhms - 30 V, 30 V 4 V 59 nC - 55 C + 150 C 208 W Enhancement Tube
Vishay / Siliconix MOSFETs N-CHANNEL 800V E Series Pwr MOSFET 685Prieinamumas
Min.: 1
Daugkart.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 800 V 9 A 184 mOhms - 30 V, 30 V 4 V 59 nC - 55 C + 150 C 35 W Enhancement Tube
Vishay Semiconductors MOSFETs N-CHANNEL 600V 3 759Prieinamumas
Min.: 1
Daugkart.: 1
Reel: 2 000

Si SMD/SMT PowerPak-9 N-Channel 1 Channel 600 V 21 A 125 mOhms - 30 V, 30 V 5 V 29 nC - 55 C + 150 C 132 W Enhancement Reel, Cut Tape, MouseReel
Vishay / Siliconix MOSFETs TO220 600V 23A N-CH MOSFET 40Prieinamumas
Min.: 1
Daugkart.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 600 V 23 A 158 mOhms - 30 V, 30 V 4 V 95 nC - 55 C + 150 C 227 W Enhancement Tube
Vishay / Siliconix MOSFETs TO220 500V 26A N-CH MOSFET 45Prieinamumas
3 000Tikėtina 2026-07-27
Min.: 1
Daugkart.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 500 V 26 A 145 mOhms - 30 V, 30 V 4 V 86 nC - 55 C + 150 C 250 W Enhancement Tube
Vishay Semiconductors MOSFETs N-CHANNEL 650V Ne Sandėlyje Esantys
Min.: 1
Daugkart.: 1
Si

Vishay Semiconductors MOSFETs N-CHANNEL 650V Ne Sandėlyje Esantys
Min.: 1
Daugkart.: 1
Si Through Hole TO-247AC-3 N-Channel 1 Channel
Vishay / Siliconix MOSFETs TO220 600V 15A N-CH MOSFET Ne Sandėlyje Esantys
Min.: 1 000
Daugkart.: 1 000

Si Through Hole TO-220-3 N-Channel 1 Channel 600 V 15 A 280 mOhms - 30 V, 30 V 4 V 78 nC - 55 C + 150 C 180 W Enhancement Tube
Vishay Semiconductors MOSFETs N-CHANNEL 600V Ne Sandėlyje Esantys
Min.: 1
Daugkart.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel
Vishay / Siliconix MOSFETs TO220 600V 32A N-CH MOSFET Ne Sandėlyje Esantys
Min.: 1 000
Daugkart.: 1 000
Reel: 1 000

Si Through Hole TO-220-3 N-Channel 1 Channel 600 V 32 A 82 mOhms - 30 V, 30 V 4 V 132 nC - 55 C + 150 C 250 W Enhancement Reel