TGF3015-SM GaN HEMT Input-Matched Transistor

Qorvo TGF3015-SM Input-Matched Transistor is a 10W (P3dB), 50Ω-input matched discrete GaN on SiC HEMT that operates from 30MHz to 3.0GHz. The integrated input matching network enables wideband gain and power performance, while the output can be matched on board to optimize power and efficiency for any region within the band. The device is housed in an industry-standard 3mm x 3mm package that saves real estate of already space-constrained handheld radios.