SiAxDJ P-Channel TrenchFET® Power MOSFETs

Vishay Siliconix SiA445EDJ and SiA441DJ are P-Channel TrenchFET® Power MOSFETs featuring Thermally Enhanced PowerPAK®. Designed using the SC-70 package with a footprint area of 2.05mm by 2.05mm, SiA445EDJ is 50% smaller than TSOP-6 devices. The slim 0.6mm profile makes SiA445EDJ 40% smaller than TSOP-6 devices. SiA445EDJ and SiA441DJ offer low on-resistance compared to N-channel down to 11 mΩ and P-channel down to 16mΩ. Also, Vishay Siliconix SiA445EDJ provides 75% higher maximum power dissipation than devices with on-resistance ratings down to 1.2V. A Zener diode in the SiA445EDJ device provides built-in ESD protection with 2000V typical EDS performance. Available in the SC-70 package and 100% R_g tested, SiA445EDJ and SiA441DJ are well-suited for load, battery, and charger switching in handheld devices, including smartphones, tablet PC, and mobile computing.