RGW 650V Field Stop Trench IGBTs

ROHM Semiconductor RGW 650V Field Stop Trench IGBTs offer a low collector-emitter saturation voltage in a small package. The RGW IGBTs feature high-speed switching, low switching loss, and built-in very fast and soft recovery FRD. The ROHM RGW 650V Field Stop Trench IGBTs are ideal for solar inverter, UPS, welding, IH, and PFC applications.

Rezultatai: 51
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Qty. RoHS ECAD modelis Technologijos
Pakuotė / Korpusas
Montavimo stilius
Configuration
Collector- Emitter Voltage VCEO Max
Kolektoriaus ir Emiterio Stoties Įtampa
Didžiausia vartų emiterio įtampa
Nuolatinė kolektoriaus srovė esant 25 C
Pd - skaidos galia
Minimali darbinė temperatūra
Didžiausia darbinė temperatūra
Pakavimas
ROHM Semiconductor IGBT TO3P 650V 16A TRNCH
Duomenų Lapas
895Prieinamumas
Min.: 1
Daugkart.: 1

Si TO-3PFM-3 Through Hole Single 650 V 1.9 V 30 V 27 A 61 W - 40 C + 175 C Tube
ROHM Semiconductor IGBT TO247 650V 30A TRNCH
Duomenų Lapas
2 394Prieinamumas
Min.: 1
Daugkart.: 1

Si TO-247GE-3 Through Hole Single 650 V 2 V 30 V 51 A 156 W - 40 C + 175 C Tube
ROHM Semiconductor IGBT TO247 650V 40A TRNCH
Duomenų Lapas
2 388Prieinamumas
Min.: 1
Daugkart.: 1

Si TO-247GE-3 Through Hole Single 650 V 2 V 30 V 71 A 202 W - 40 C + 175 C Tube
ROHM Semiconductor IGBT TO247 650V 60A TRNCH
Duomenų Lapas
2 387Prieinamumas
Min.: 1
Daugkart.: 1

Si TO-247GE-3 Through Hole Single 650 V 2 V 30 V 104 A 288 W - 40 C + 175 C Tube
ROHM Semiconductor IGBT High-Speed Fast Switching Type, 650V 40A, Automotive Hybrid IGBT with Built-In SiC-SBD
Duomenų Lapas
Produkto pastabos
443Prieinamumas
Min.: 1
Daugkart.: 1

SiC TO-247N-3 Through Hole Single 650 V 1.9 V 30 V 81 A 214 W - 40 C + 175 C Tube
ROHM Semiconductor IGBT 650V 50A TO-3PFM Field Stp Trnch IGBT
Duomenų Lapas
450Prieinamumas
Min.: 1
Daugkart.: 1

Si TO-3PFM-3 Through Hole Single 650 V 1.9 V 30 V 45 A 89 W - 40 C + 175 C Tube
ROHM Semiconductor IGBT High-Speed Fast Switching Type, 650V 50A, FRD Built-in, TO-247N, Field Stop Trench IGBT
Duomenų Lapas
Produkto pastabos
450Prieinamumas
Min.: 1
Daugkart.: 1

Si TO-247N-3 Through Hole Single 650 V 1.9 V 30 V 96 A 254 W - 40 C + 175 C Tube
ROHM Semiconductor IGBT High-Speed Fast Switching Type, 650V 50A, FRD Built-in, TO-247N, Field Stop Trench IGBT
Duomenų Lapas
Produkto pastabos
450Prieinamumas
Min.: 1
Daugkart.: 1

Si TO-247N-3 Through Hole Single 650 V 1.9 V 30 V 96 A 254 W - 40 C + 175 C Tube
ROHM Semiconductor IGBT High-Speed Fast Switching Type, 650V 50A, TO-247N, Field Stop Trench IGBT
Duomenų Lapas
Produkto pastabos
450Prieinamumas
Min.: 1
Daugkart.: 1

Si TO-247N-3 Through Hole Single 650 V 1.9 V 30 V 96 A 254 W - 40 C + 175 C Tube
ROHM Semiconductor IGBT High-Speed Fast Switching Type, 650V 18A, FRD Built-in, TO-3PFM, Field Stop Trench IGBT
Duomenų Lapas
448Prieinamumas
Min.: 1
Daugkart.: 1

Si TO-3PFM-3 Through Hole Single 650 V 1.9 V 30 V 30 A 67 W - 40 C + 175 C Tube
ROHM Semiconductor IGBT High-Speed Fast Switching Type, 650V 30A, FRD Built-in, TO-247N, Field Stop Trench IGBT
Duomenų Lapas
Produkto pastabos
450Prieinamumas
Min.: 1
Daugkart.: 1

Si TO-247N-3 Through Hole Single 650 V 1.9 V 30 V 64 A 178 W - 40 C + 175 C Tube
ROHM Semiconductor IGBT High-Speed Fast Switching Type, 650V 30A, FRD Built-in, TO-247N, Field Stop Trench IGBT
Duomenų Lapas
Produkto pastabos
450Prieinamumas
Min.: 1
Daugkart.: 1

Si TO-247N-3 Through Hole Single 650 V 1.9 V 30 V 64 A 178 W - 40 C + 175 C Tube
ROHM Semiconductor IGBT High-Speed Fast Switching Type, 650V 30A, TO-247N, Field Stop Trench IGBT
Duomenų Lapas
Produkto pastabos
450Prieinamumas
Min.: 1
Daugkart.: 1

Si TO-247N-3 Through Hole Single 650 V 1.9 V 30 V 64 A 178 W - 40 C + 175 C Tube
ROHM Semiconductor IGBT High-Speed Fast Switching Type, 650V 40A, FRD Built-in, TO-247N, Field Stop Trench IGBT
Duomenų Lapas
Produkto pastabos
450Prieinamumas
Min.: 1
Daugkart.: 1

Si TO-247N-3 Through Hole Single 650 V 1.9 V 30 V 80 A 214 W - 40 C + 175 C Tube
ROHM Semiconductor IGBT Transistor, IGBT, 650V 40A, FRD Built-in, TO-247N, Field Stop Trench IGBT
Duomenų Lapas
Produkto pastabos
450Prieinamumas
Min.: 1
Daugkart.: 1

Si TO-247N-3 Through Hole Single 650 V 1.9 V 30 V 80 A 214 W - 40 C + 175 C Tube
ROHM Semiconductor IGBT High-Speed Fast Switching Type, 650V 40A, TO-247N, Field Stop Trench IGBT
Duomenų Lapas
Produkto pastabos
450Prieinamumas
Min.: 1
Daugkart.: 1

Si TO-247N-3 Through Hole Single 650 V 1.9 V 30 V 80 A 214 W - 40 C + 175 C Tube
ROHM Semiconductor IGBT TO247 650V 50A TRNCH
Duomenų Lapas
2 400Prieinamumas
Min.: 1
Daugkart.: 1

Si TO-247GE-3 Through Hole Single 650 V 2 V 30 V 88 A 245 W - 40 C + 175 C Tube
ROHM Semiconductor IGBT TO247 650V 50A TRNCH
Duomenų Lapas
2 400Prieinamumas
Min.: 1
Daugkart.: 1

Si TO-247GE-3 Through Hole Single 650 V 2 V 30 V 88 A 245 W - 40 C + 175 C Tube
ROHM Semiconductor IGBT TO247 650V 30A TRNCH
Duomenų Lapas
2 394Prieinamumas
Min.: 1
Daugkart.: 1

Si TO-247GE-3 Through Hole Single 650 V 2 V 30 V 51 A 156 W - 40 C + 175 C Tube
ROHM Semiconductor IGBT TO247 650V 40A TRNCH
Duomenų Lapas
2 400Prieinamumas
Min.: 1
Daugkart.: 1

Si TO-247GE-3 Through Hole Single 650 V 2 V 30 V 71 A 202 W - 40 C + 175 C Tube
ROHM Semiconductor IGBT TO247 650V 60A TRNCH
Duomenų Lapas
2 400Prieinamumas
Min.: 1
Daugkart.: 1

Si TO-247GE-3 Through Hole Single 650 V 2 V 30 V 104 A 288 W - 40 C + 175 C Tube
ROHM Semiconductor IGBT High-Speed Fast Switching Type, 650V 75A, FRD Built-in, TO-247N, Field Stop Trench IGBT
Duomenų Lapas
Produkto pastabos
400Prieinamumas
Min.: 1
Daugkart.: 1

Si TO-247N-3 Through Hole Single 650 V 1.9 V 30 V 132 A 348 W - 40 C + 175 C Tube
ROHM Semiconductor IGBT High-Speed Fast Switching Type, 650V 75A, FRD Built-in, TO-247N, Field Stop Trench IGBT
Duomenų Lapas
Produkto pastabos
450Prieinamumas
Min.: 1
Daugkart.: 1

Si TO-247N-3 Through Hole Single 650 V 1.9 V 30 V 132 A 348 W - 40 C + 175 C Tube
ROHM Semiconductor IGBT Transistor IGBT, 650V 75A, TO-247N
Duomenų Lapas
Produkto pastabos
450Prieinamumas
Min.: 1
Daugkart.: 1

Si TO-247N-3 Through Hole Single 650 V 1.9 V 30 V 132 A 348 W - 40 C + 175 C Tube
ROHM Semiconductor IGBT High-Speed Fast Switching Type, 650V 30A, Automotive Hybrid IGBT with Built-In SiC-SBD
Duomenų Lapas
Produkto pastabos
3Prieinamumas
Min.: 1
Daugkart.: 1

SiC TO-247N-3 Through Hole Single 650 V 1.9 V 30 V 64 A 178 W - 40 C + 175 C Tube