LMG5200 80V GaN Half Bridge Power Stage

Texas Instruments LMG5200 80V GaN Half-Bridge Power Stage provides an integrated power stage solution using enhancement-mode Gallium Nitride (GaN) FETs. The device consists of two 80V GaN FETs driven by one high-frequency GaN FET driver in a half-bridge configuration. GaN FETs provide significant advantages for power conversion as they have near-zero reverse recovery and minimal input capacitance C_ISS. All of Texas Instruments LMG5200 are mounted on a completely bond-wire free package platform with minimized package parasitic elements. The TTL logic compatible inputs can withstand input voltages up to 12V regardless of the V_CC voltage. The proprietary bootstrap voltage clamping technique ensures the gate voltages of the enhancement-mode GaN FETs are within a safe operating range.