CoolMOS™ C7 Power MOSFETs

Infineon's CoolMOS™ C7 Power MOSFETs are a revolutionary step forward in technology, providing low RDS(on)/package and, thanks to its low switching losses, efficiency improvements over the full load range. The C7 is optimized for hard switching topologies such as Power Factor Correction (CCM PFC), Two Transistor Forward (TTF) and Solar Boost in applications such as Solar, Server, Telecom and UPS. The 650V breakdown voltage makes it suitable for Solar and Switched Mode Power Supplies (SMPS) PFC stages where extra safety margin are required. They offer the world's lowest RDS(on) of 19mΩ in a TO-247 and 45mΩ in TO-220 and D2PAK packages. The fast switching performance of C7 now enables customers to operate at switching frequencies greater than 100kHz while achieving titanium levels of efficiency in Server PFC stages.

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Qty. RoHS ECAD modelis Technologijos
Montavimo stilius
Pakuotė / Korpusas
Tranzistoriaus poliškumas
Kanalų skaičius
Vds - nutekėjimo-šaltinio pramušimo įtampa
svar. – nuolatinio išleidimo srovė
RDS On - Drain-Source Varža
Vgs - užtūros-šaltinio įtampa
Vgs th - užtūros-šaltinio slenkstinė įtampa
Qg – vartų krūvis
Minimali darbinė temperatūra
Didžiausia darbinė temperatūra
Pd - skaidos galia
Kanalas Mode
Prekinis pavadinimas
Pakavimas
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731Prieinamumas
Min.: 1
Daugkart.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 600 V 50 A 40 mOhms - 20 V, 20 V 3 V 107 nC - 55 C + 150 C 227 W Enhancement CoolMOS Tube
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589Prieinamumas
Min.: 1
Daugkart.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 600 V 35 A 60 mOhms - 20 V, 20 V 3 V 68 nC - 55 C + 150 C 162 W Enhancement CoolMOS Tube
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240Prieinamumas
Min.: 1
Daugkart.: 1

Si Through Hole TO-247-4 N-Channel 1 Channel 600 V 50 A 40 mOhms - 20 V, 20 V 3.5 V 107 nC - 55 C + 150 C 227 W Enhancement CoolMOS Tube
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1 648Prieinamumas
„MouseReel“ galima
Min.: 1
Daugkart.: 1
Reel: 1 000

Si SMD/SMT D2PAK-3 (TO-263-3) N-Channel 1 Channel 600 V 50 A 40 mOhms - 20 V, 20 V 3 V 107 nC - 55 C + 150 C 227 W Enhancement CoolMOS Reel, Cut Tape, MouseReel
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2 461Prieinamumas
„MouseReel“ galima
Min.: 1
Daugkart.: 1
Reel: 2 500

Si SMD/SMT DPAK-3 (TO-252-3) N-Channel 1 Channel 650 V 13 A 168 mOhms - 20 V, 20 V 3 V 23 nC - 55 C + 150 C 72 W Enhancement CoolMOS Reel, Cut Tape, MouseReel
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2 472Prieinamumas
„MouseReel“ galima
Min.: 1
Daugkart.: 1
Reel: 3 000

Si SMD/SMT VSON-4 N-Channel 1 Channel 600 V 29 A 65 mOhms - 20 V, 20 V 3 V 68 nC - 40 C + 150 C 180 W Enhancement CoolMOS Reel, Cut Tape, MouseReel
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3 562Prieinamumas
„MouseReel“ galima
Min.: 1
Daugkart.: 1
Reel: 3 000

Si SMD/SMT VSON-4 N-Channel 1 Channel 600 V 83 A 104 mOhms - 20 V, 20 V 3.5 V 42 nC - 40 C + 150 C 122 W Enhancement CoolMOS Reel, Cut Tape, MouseReel
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948Prieinamumas
Min.: 1
Daugkart.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 600 V 22 A 85 mOhms - 20 V, 20 V 3 V 42 nC - 55 C + 150 C 110 W Enhancement CoolMOS Tube
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624Prieinamumas
Min.: 1
Daugkart.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 650 V 24 A 84 mOhms - 20 V, 20 V 3 V 45 nC - 55 C + 150 C 128 W Enhancement CoolMOS Tube

Infineon Technologies MOSFETs N-Ch 650V 75A TO247-3 CoolMOS C7
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220Prieinamumas
175Tikėtina 2026-04-09
Min.: 1
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Si Through Hole TO-247-3 N-Channel 1 Channel 650 V 75 A 19 mOhms - 20 V, 20 V 3 V 215 nC - 55 C + 150 C 446 W Enhancement CoolMOS Tube

Infineon Technologies MOSFETs N-Ch 650V 46A TO247-3 CoolMOS C7
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279Prieinamumas
Min.: 1
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Si Through Hole TO-247-3 N-Channel 1 Channel 650 V 46 A 40 mOhms - 20 V, 20 V 3.5 V 93 nC - 55 C + 150 C 227 W Enhancement CoolMOS Tube
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206Prieinamumas
Min.: 1
Daugkart.: 1

Si Through Hole TO-247-4 N-Channel 1 Channel 600 V 109 A 17 mOhms - 20 V, 20 V 3 V 240 nC - 55 C + 150 C 446 W Enhancement CoolMOS Tube
Infineon Technologies MOSFETs N-Ch 700V 75A TO247-4
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167Prieinamumas
Min.: 1
Daugkart.: 1

Si Through Hole TO-247-4 N-Channel 1 Channel 650 V 75 A 17 mOhms - 20 V, 20 V 3 V 215 nC - 55 C + 150 C 446 W Enhancement CoolMOS Tube
Infineon Technologies MOSFETs N-Ch 700V 46A TO247-4
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383Prieinamumas
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Si Through Hole TO-247-4 N-Channel 1 Channel 650 V 46 A 40 mOhms - 20 V, 20 V 3 V 93 nC - 55 C + 150 C 227 W Enhancement CoolMOS Tube
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394Prieinamumas
2 160Pagal užsakymą
Min.: 1
Daugkart.: 1

Si Through Hole TO-247-4 N-Channel 1 Channel 650 V 33 A 58 mOhms - 20 V, 20 V 3 V 64 nC - 55 C + 150 C 171 W Enhancement CoolMOS Tube
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370Prieinamumas
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Si Through Hole TO-220-3 N-Channel 1 Channel 600 V 9 A 346 mOhms - 20 V, 20 V 3.5 V 24 nC - 55 C + 150 C 29 W Enhancement CoolMOS Tube
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242Prieinamumas
Min.: 1
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Si Through Hole TO-220-3 N-Channel 1 Channel 650 V 12 A 84 mOhms - 20 V, 20 V 3 V 45 nC - 55 C + 150 C 34 W Enhancement CoolMOS Tube
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288Prieinamumas
Min.: 1
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Si Through Hole TO-220-3 N-Channel 1 Channel 650 V 18 A 111 mOhms - 20 V, 20 V 3 V 35 nC - 55 C + 150 C 101 W Enhancement CoolMOS Tube

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166Prieinamumas
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Si Through Hole TO-247-3 N-Channel 1 Channel 600 V 22 A 85 mOhms - 20 V, 20 V 3 V 42 nC - 55 C + 150 C 110 W Enhancement CoolMOS Tube

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219Prieinamumas
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Si Through Hole TO-247-3 N-Channel 1 Channel 600 V 13 A 180 mOhms - 20 V, 20 V 3 V 24 nC - 55 C + 150 C 68 W Enhancement CoolMOS Tube

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224Prieinamumas
Min.: 1
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Si Through Hole TO-247-3 N-Channel 1 Channel 650 V 33 A 65 mOhms - 20 V, 20 V 3 V 64 nC - 55 C + 150 C 171 W Enhancement CoolMOS Tube

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58Prieinamumas
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Si Through Hole TO-247-3 N-Channel 1 Channel 650 V 33 A 58 mOhms - 20 V, 20 V 3 V 64 nC - 55 C + 150 C 171 W Enhancement CoolMOS Tube

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43Prieinamumas
Min.: 1
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Si Through Hole TO-247-3 N-Channel 1 Channel 650 V 13 A 168 mOhms - 20 V, 20 V 3.5 V 23 nC - 55 C + 150 C 72 W Enhancement CoolMOS Tube

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334Prieinamumas
Min.: 1
Daugkart.: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 650 V 13 A 168 mOhms - 20 V, 20 V 3 V 23 nC - 55 C + 150 C 72 W Enhancement CoolMOS Tube
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26Prieinamumas
Min.: 1
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Si Through Hole TO-247-4 N-Channel 1 Channel 600 V 22 A 99 mOhms - 20 V, 20 V 3 V 42 nC - 55 C + 150 C 110 W Enhancement CoolMOS Tube